Microsemi Corporation 1N4454UR-1 Datasheet
MINI-MELF-SMD Silicon Switching Diode
1N4454UR-1
Applications
Used in general purpose applications,
where performance, space and
switching speed are important.
LL-34/35 MINI MELF
Surface Mount Package DO-213AA
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
0.10"REF
2.54 mmREF
Length
0.13-0.146"
3.30-3.70 mm
Also comes in DO-35 glass package
Full UR approval to Mil-S-19500 /144
Available up to JANTXV levels
"S" level screening available to Source Control Drawings
Both End Caps
0.016-.022"
0.41-0.55 mm
Dia.
.063-.067"
1.6-1.7mm
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage @ 5µA & 0.1µA @ -55
Average Rectified Current I
Continuous Forward Current I
Peak Surge Current (t
Power Dissipation T
= 1 sec.) I
peak
= 50 oC, L = 3/8" from body P
L
Operating Temperature Range T
Storage Temperature Range T
Electrical Characteristics @ 25
Forward Voltage @ I
Breakdown Voltage @ I
= 10 mA V
F
= 10 mA PIV 75 (min) Volts
R
Reverse Leakage Current @ V
Reverse Leakage Current @ V
Capacitance @ V
= 0 V, f = 1mHz C
R
Reverse Recovery Time (note 1)/(note 2) t
Forward Recovery Voltage (note 3) V
o
C* Symbol Limits Unit
= 50 V I
R
= 50 V, T=150
R
o
C PIV 75 (Min.) Volts
200 mAmps
300 mAmps
1.0 Amp
500 mWatts
200
-65 to +200
o
o
1.0(max) Volts
0.1 (max) µA
100 (max) µA
2.0 (max) pF
2.0/4.0 (max) nSecs
3.0 (max) Volts
o
C I
Avg
Fdc
peak
tot
Op
St
F
R
R
T
rr
fr
C
C
Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf.
Note 2: Per Method 4031-A with I
Note 3: Per Method 4026 with I
tition Rate = 5 - 100 KHz. *Unless Otherwise Specified
= 10 mA, RL = 100 Ohms, Vr = 6 V, Recover to 1.0 mA.
F
= 100 mA, RL = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe-
F
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
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