Microsemi Corporation 1N4153UR-1, 1N4153-1, 1N4153 Datasheet

Silicon Switching Diode DO-35 Glass Package

1N4153,

1N4150

1N4153-1

Applications

Used in general purpose applications,where a low current controlled forward
characteristic and fast switching speed are important.

DO-35 Glass Package

Features

Six sigma quality

Lead Dia.

0.018-0.022"

0.458-0.558 mm

Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available

1.0"

25.4 mm
(Min.)

Length

0.120-.200"

3.05-5.08-

mm

Dia.

0.06-0.09"

1.53-2.28 mm

Full approval to Mil-S-19500/337
Available up to JANTXV-1 levels
"S" level screening available to SCDs

Maximum Ratings Symbol Value Unit

Peak Inverse Voltage PIV 75 (Min.) Volts
Average Rectified Current I
Continuous Forward Current I
Peak Surge Current (t
BKC Power Dissipation T

= 1 Sec.) I

peak

= 50 oC, L = 3/8" from body P

L

Operating and Storage Temperature Range T

Electrical Characteristics @ 25

Forward Voltage @ IF = 100 µA V
Forward Voltage @ I
Forward Voltage @ I
Forward Voltage @ I
Forward Voltage @ I
Forward Voltage @ I

= 250 µA V

F

= 1.0 mA V

F

= 2.0 mAV

F

= 10 mA V

F

= 20 mA V

F

Reverse Leakage Current @ V
Breakdown Voltage @ I

Capacitance @ VR = 0 V, f = 1mHz C

= 5.0 µA PIV 75 Volts

R

Reverse Recovery Time (note 1) t
Reverse Recovery Time (note 2) t

Avg

Fdc
peak

tot

-65 to +200

Op & St

o

C* Symbol Minimum Maximum Unit

Vf 0.49 0.55 Volts

F

Vf 0.53 0.59 Volts

F

Vf 0.59 0.67 Volts

F

Vf 0.62 0.70 Volts

F

0.70 0.81 Volts

F

0.74 0.88 Volts

F

= 50 V I

R

R

T

rr
rr

0.05(50 @ 150

150 mAmps
300 mAmps

0.25 Amp
500 mWatts

o

C

o

C) µA

2.0 pF

4.0 nSecs

2.0 nSec

Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. *Unless Otherwise Specified

Note2: Per Method 4031-A with IF = IR = 10 mA, Rr = 6 Volts, Rl=100 ohms.

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