Silicon Switching Diode DO-35 Glass Package
Applications
1N4150
11NNor1
or
1N4150-1
1N
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
DO-35 Glass Package
Features
Six sigma quality
Lead Dia.
0.018-0.022"
0.458-0.558 mm
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
mm
Dia.
0.06-0.09"
1.53-2.28 mm
Full approval to Mil-S-19500/231
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage PIV 75 (Min.) Volts
Average Rectified Current I
Continuous Forward Current I
Peak Surge Current (t
BKC Power Dissipation T
= 1 sec.) I
peak
=50 oC, L = 3/8" from body P
L
Operating Temperature Range T
Storage Temperature Range T
Electrical Characteristics @ 25
Forward Voltage Drop @ IF = 1.0 mA V
Forward Voltage Drop @ I
Forward Voltage Drop @ I
Forward Voltage Drop @ I
= 10 mA V
F
= 50 mA V
F
= 100 m V
F
Forward Voltage Drop @ IF = 200 mA V
Reverse Leakage Current @ V
o
C Symbol Minimum Maximum Unit
0.54 0.62 Volts
F
0.66 0.74 Volts
F
0.76 0.86 Volts
F
0.80 0.92 Volts
F
0.87 1.0 Volts
F
= 50 V I
R
r
Avg
Fdc
peak
tot
-65 to +200
Op
-65 to +200
St
0.1 (100 @ 150 oC) µA
Breakdown Voltage @ Ir = 0.1 mA PIV 75 Volts
Capacitance @ V
Reverse Recovery time (note 1) t
Reverse Recovery time (note 2,3) t
Forward Recovery time (note 4) V
Note 1: Per Method 4031-A with IF = IR = 10 to 200 mA, RL = 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with I
Note 3: Per Method 4031-A with I
Note 4: Per Method 4026 with IF = 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
= 0 V, f = 1mHz C
R
= IR = 200 to 400 mA, RL = 100 Ohms,recover to 0.1 If.
F
= 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
F
T
rr
rr
fr
200 mAmps
400 mAmps
0.5 Amp
500 mWatts
o
o
2.5 pF
4.0 nSecs
6.0 nSecs
10 nSecs
C
C
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135