Microsemi Corporation 1N4148-1 Datasheet
Silicon Switching Diode DO-35 Glass Package
1N4148
or
Applications
1N4148-1
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
DO-35 Glass Package
Features
Six sigma quality
Lead Dia.
0.018-0.022"
0.458-0.558 mm
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
mm
Dia.
0.06-0.09"
1.53-2.28 mm
Hermetic Glass Body
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings-
i
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage @ 5µA & 0.1µA @ -55
Average Rectified Current Iavg 200 mAmps
Continuous Forward Current I
Peak Surge Current (t
BKC Power Dissipation T
= 1 sec.) I
peak
=50 oC, L = 3/8" from body P
L
Operating Temperature Range T
Storage Temperature Range T
Electrical Characteristics @ 25
Forward Voltage Drop @ IF = 10 mA V
Breakdown Voltage @ I
Breakdown Voltage @ I
= 5 µA PIV 75 Volts
R
= 100µA PIV 100 Volts
R
o
C* Symbol Minimum Maximum Unit
o
C PIV 100 (Min). Volts
Fdc
peak
tot
-65 to +200
Op
-65 to +200
St
*** 1.00 Volts
F
300 mAmps
1.0 Amp
500 mWatts
o
o
C
C
Reverse Leakage Current @ V
Capacitance @ V
= 0 V, f = 1mHz C
R
Reverse Recovery time (note 1) t
Note 1: Per Method 4031-A with IF = 10 mA,Vr = 6 V, RL = 100 Ohms. * UNLESS OTHERWISE SPECIFIED
= 75 V I
R
R
T
rr
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
5 (100 @ 150 oC) µA
4.0 pF
4.0 nSecs
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