Microsemi Corporation 04M0 Datasheet

NOTE 2: Pulsed: PW = 100ms max.; duty cycle

<

20%

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle

<

2%, 90us after leading edge

Packaging Options:

Metallization Options:

Processing Options:

04M0

A Microsemi Company

580 Pleasant St. Phone: [phone]
Watertown, MA 02472 Fax: [phone]

DIE SPECIFICATION

100V 300mA
MONOLITHIC DIODE ARRAY

5

FEATURES:

• INDIVIDUAL DIODES EQUIVALENT TO 1N4148

• Vf MATCH TO 5 mV at 10 mA

C C

A A

.049"

C

A A

C

.023"

• ULTRA-HIGH SPEED SWITCHING

• QUAD ISOLATED DIODES

Absolute Maximum Ratings:

Symbol Parameter Limit Unit

VBR(R) *1 *2 Reverse Breakdown Voltage 100 Vdc
IO *1 Continuous Forward Current 300 mAdc
IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc
Top Operating Junction Temperature Range -65 to +150 °C
Tstg Storage Temperature Range -65 to +200 °C

NOTE 1: Each Diode

Electrical Characteristics (Per Diode) @ 25°C unless otherwise

Symbol Parameter Conditions Min Max Unit

BV1 Breakdown Voltage IR = 100uAdc 100
BV2 Breakdown Voltage IR = 5uAdc 75
Vf1 Forward Voltage IF = 100mAdc *1 1 Vdc
IR1 Reverse Current VR = 40 Vdc 0.1 uAdc
IR2 Reverse Current VR = 20 Vdc 25 nAdc
Ct Capacitance (pin to pin) VR = 0 Vdc; f = 1 MHz 4.0 pF
tfr Forward Recovery Time IF = 100mAdc 15 ns
trr Reverse Recovery Time IF = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms 5 ns
VF5 Forward Voltage Match IF = 10 mA 5 mV

W: Wafer (100% probed) U: Wafer
(sample probed)

Standard: Al Top / Au Backside
(No Dash #)

Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.

MSC1023.PDF Rev - 11/25/98

Standard: Capable of JANTXV application
(No Suffix)

ORDERING INFORMATION

PART #: 04M0_ _- _

First Suffix Letter: Packaging Option

Second Suffix Letter: Processing Option

Dash #: Metallization Option