Micronas Intermetall HAL800UT-K, HAL800UT-E, HAL800UT-C, HAL800UT-A Datasheet

PRELIMINARY DATA SHEET

MICRONAS

HAL 800
Programmable Linear
Hall Effect Sensor

Edition Oct. 20, 1999
6251-441-1DS

MICRONAS

HAL800

Contents
Page Section Title

3 1. Introduction

3 1.1. Major Applications
3 1.2. Features
4 1.3. Marking Code
4 1.4. Operating Junction Temperature Range (T
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
4 1.7. Pin Connections and Short Descriptions

5 2. Functional Description

5 2.1. General Function
7 2.2. Digital Signal Processing and EEPROM
9 2.3. Calibration Procedure
9 2.3.1. General Procedure
10 2.3.2. Calibration of Angle Sensor

)

J

11 3. Specifications

11 3.1. Outline Dimensions
11 3.2. Dimensions of Sensitive Area
11 3.3. Position of Sensitive Area
12 3.4. Absolute Maximum Ratings
12 3.5. Recommended Operating Conditions
13 3.6. Electrical Characteristics
14 3.7. Magnetic Characteristics
14 3.8. Typical Characteristics

17 4. Application Notes

17 4.1. Application Circuit
17 4.2. Temperature Compensation
18 4.3. Am bi ent Te mpe ratur e
18 4.4. EMC and ESD

19 5. Programming of the Sensor

19 5.1. Definition of Programming Pulses
19 5.2. Definition of the Telegram
21 5.3. Telegram Codes
22 5.4. Number Formats
23 5.5. Register Information
23 5.6. Programming Information

24 6. Data Sheet History

2 Micronas

HAL800

Programmable Linear Hall Effect Sensor

1. Introduction

The

HAL 800 is an universal magnetic field sensor with

a linear output based on the Hall effect. The IC is
designed and produ ced in sub-mic ron CMOS techn ol­ogy and can be used for angle or distance measure­ments if combined wit h a rotating or moving magnet.
The major characteristics like magnetic field range,
sensitivity, output quiescent voltage (output voltage at
B = 0 mT), and output voltage range are p rogramma­ble in a non-volatile memo ry. The sensor has a ratio­metric output ch aracter isti c, which mean s th at the out­put voltage is propor ti on al to the m agn eti c flux and t he
supply voltage.

HAL 800 features a temperature compensated

The
Hall plate with choppered offset compensation, an A/D
converter, digital signal processing, a D/A converter
with output driver, an EEPROM memory with redun­dancy and lock function for the calibration data, a serial
interface for programming the EEPROM, and protec­tion devices at all pins. The internal di gital signal pro­cessing is of great benefit because analog offsets,
temperature shifts, and mechanical stress do not
degrade the sensor accuracy.

1.1. Major Applications

Due to the sensor’s versatile programming characteris­tics, the
applications such as:

– contactless potentiometers,
– rotary position measurement,
– linear position detection,
– magnetic field and current measurement.

1.2. Features

– high precision linear Hall effect sensor with

ratiometric output

– multiple programmable magnetic characteristics

with non-volatile memory
– digital signal processing
– temperature characteristics programmable for

matching all common magnetic materials
– programmable clamping voltages
– programming with a modulation of the supply

voltage

HAL 800 is the optimal system solution for

HAL 800 is programmable by modulating the sup-

The
ply voltage. No additional programming pi n is needed.
The easy programmab ility allows a 2-point calib ration
by adjusting the output voltage directly to the input sig­nal (like mechanical angle, distance or current). An
individual adjustment of each sensor during the cus­tomers manufacturing process is possible. With this
calibration procedur e the tolera nces of the sensor, the
magnet, and the mechanical positioning can be com­pensated in the final assembly.

In addition, the t emperature compensation of the Hall
IC can be fit to all commo n magne tic mat er ials by pro­gramming first and second order temperature coeffi­cients of the Hall sensor sensitivity. This enables an
operation over the full temperature range with high
accuracy.

The calculation of the indiv idual se nsor cha racteristi cs
and the programming of the EEPROM memory can
easily be done with a PC and the applic ation kit from
Micronas. The
characteristics can be programmed in a wide range.
Therefore, one Hall IC type can be used for various
applications.

HAL 800 eases logistic because its

– lock function and redundancy for EEPROM memory

– operates from −40 °C up to 150 °C

ambient temperature

– operates from 4.5 V up to 5.5 V supply voltage
– operates with static magnetic fields and dynamic

magnetic fields up to 2 kHz

– choppered offset compensa tio n
– overvoltage and reverse-voltage protection at all

pins
– magnetic characteristics extremely robust against

mechanical stress

– short-circuit protected push-pull output
– EMC optimized design

The sensor is desig ned for hostile indus trial and a uto­motive applications and operates with typically 5 V
supply voltage in the amb ient temperature range from

−40 °C up to 150 °C.

The

HAL 800 is available in the very small leaded

package TO-92UT.

Micronas 3

HAL800

HALXXXPA-T

Temperature Range: A, K, E, or C
Package: UT for TO-92UT
Type: 800

1.3. Marki n g C o de

HAL 800 has a marking on the package surface

The
(branded side). T his m ark ing in clud es the name o f th e
sensor and the temperature range.

Type Temperature Range

A K E C

HAL 800 800A 800K 800E 800C

1.4. Operating Junction Temperature Range (T

A: TJ =
K: TJ =
E: TJ =

−40 °C to +170 °C

−40 °C to +140 °C

−40 °C to +100 °C

)

J

C: TJ = 0 °C to +100 °C
The Hall sensors from Micronas are specified to the

chip temperature (junction temperature T
The relationship between ambient temperature (T

and junction temperature is explained in

on page 18

.

).

J

Section 4.3.

A

1.6. Solderability

Package TO-92UT: according to IEC68-2-58
During soldering reflow processing and manual

reworking, a component body temperature of 260 °C
should not be exceeded.

Components stored in the original packaging should
provide a shelf life of at least 12 m onths, starting fro m
the date code prin ted on the labels, even in environ­ments as extreme as 40 °C and 90% relative humidity.

1.7. Pin Connections and Short Descriptions

Pin

Pin Name Type Short Description

No.

1V

DD

IN Supply Voltage and

Programming Pin

2 GND Ground

)

3 OUT OUT Push Pull Output

V

1

DD

1.5. Hall Sensor Package Codes

Example: HAL800UT-A

→ Type: 800
→ Package: TO-92UT
→ Temperature Range: T

= −40°C to +170°C

J

Hall sensors are available in a wide variety of packag­ing versions and quantities. For more detailed informa­tion, please refer to the brochure: “Ordering Co des for
Hall Sensors”.

OUT

3

2

GND

Fig. 1–1: Pin configuration

4 Micronas

HAL800

2. Functional Description

2.1. General Function

HAL 800 is a monolithic integrated circuit which

The
provides an output voltage proportional to the mag­netic flux through the Hall pla te an d pr oportional to the
supply voltage.

The external magnetic field component perpendi cular
to the branded side of th e package generates a Hall
voltage. This voltage is converted to a digital value,
processed in the Digital S ignal Processing Uni t (DSP)
according to the EEPROM programming, converted to
an analog voltage with ratio metr ic behavior, and stabi­lized by a push-pull output transis tor stage. The func­tion and the parameters for the DSP are detailed
explained in

Section 2.2. on page 7.

The setting of the LOCK register disables the program­ming of the EE PROM memor y for all time. This r egis­ter cannot be reset.

As long as the LOCK register is not set, the output
characteristic can be adjusted by modifying the
EEPROM registers. The IC is addressed by modulat­ing the supply voltage

(see Fig. 2–1). In the supply

voltage range from 4.5 V up to 5.5 V , the sensor gener-

ates an analog outp ut voltage. After detecting a com­mand, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
analog output is switched off during the communica­tion.

Internal temperature compensation circuitry and the
choppered offset compensation enables operation
over the full temperature range with minim al changes
in accuracy and high o ffset stability. The circuitry also
rejects offset shifts d ue to mechanical stres s from the
package. The non-volatile memory is equipped with
redundant EEPROM cells. In addi ti on, th e s ensor IC i s
equipped with devices for overvoltage and reverse volt­age protection at all pins.

HAL

8
7

(V)

DD

6

V

5

800A

V

DD

GND

Fig. 2–1: Programming with V

OUT

DD

V

DD

(V)

OUT

V

digital

modulation

analog

V

DD

Internally
stabilized
Supply and
Protection
Devices

Switched A/D
Hall Plate Converter

Supply
Level
Detection

GND

Temperature
Dependent
Bias

Fig. 2–2: HAL800 block diagram

Digital
Signal
Processing

EEPROM Memory

Lock Control

Oscillator

D/A Analog
Converter Output

Digital
Output

Protection
Devices

100 Ω

OUT

Micronas 5

HAL800

0

1

2

3

4

5

–40 –20 0 20 40

mT

V

B

V

OUT

Clamp-high = 4 V

Sensitivity = 0.15

V

OQ

= 2.5 V

Clamp-low = 1 V

Range = 30 mT

Fig. 2–4: Example for output characteristics

ADC-READOUT Register

14 bit

Digital Signal Processing

TC
6 bit

A/D
Converter

TCSQ
5 bit

Digital
Filter

MODE Register
RANGE
2 bit

FILTER
1 bit

Multiplier Adder Limiter D/A

SENSI­TIVITY LOW

14 bit

VOQ

11 bit

EEPROM Memory

Fig. 2–3: Details of EEPROM and Digital Signal Processing

CLAMP-

10 bit

CLAMP­HIGH

11 bit

LOCK
1 bit

Lock
Control

Digital

Output

Converter

Micronas
Registers

V

V

5

Clamp-high = 4.5 V

OUT

4

3

2

1

0
–150 –100 –50 0 50 100 150

Range = 150 mT

Sensitivity = –0.45
V

= –0.5 V

OQ

Clamp-low = 0.5 V

B

Fig. 2–5: Example for output characteristics

mT

6 Micronas

HAL800

2.2. Digital Signal Processing and EEPROM

The DSP is the m a jo r pa rt of thi s s ens or a nd performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM r egisters. The details are
shown in

Fig. 2–3.

Terminology:

SENSITIVITY:name of the register or register value
Sensitivity: name of the parameter

The EEPROM registers consist of three groups:
Group 1 contains the r egisters for the adaption of the

sensor to the magnetic system:
MODE for selecting the magnetic fie ld range and filter
frequency, TC and TCSQ for temperature characteris­tics of the magnetic sensitivity.

Group 2 contains the registers for defining the output
characteristics: SENSITIVITY, VOQ, CLAMP-LOW,
and CLAMP-HIGH. The output characteristic of the
sensor is defined by these 4 parameters (see

Fig. 2–4

and Fig. 2–5 for examples).
– The parameter V

(Output Quiescent Voltage) cor-

OQ

responds to the output voltage at B = 0 mT.

– The parameter Sensitivity is defined as:

∆V

Sensitivity =

OUT

∆B

– The output voltage can be calculated as:

∼ Sensitivity × B + V

V

OUT

OQ

The output voltage range can be clamped by setting
the registers CLAMP -LOW and CLA MP-H IGH in order
to enable failure detection (such as short-circuits to

or GND).

V

DD

Group 3 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency tr imming, A/D converter offset
compensation, and several other special settings.

The ADC converts positive or negative Hall voltages
(operates with m agnetic north and south poles at the
branded side of the package) in a digital value. This
signal is filtered in the Di gital Filter and is readable in
the ADC-READOUT regi ster as long as the LOCK b it
is not set.

Note: The ADC-READOUT values and the resolution
of the system depe nds on the filte r freque ncy. Po sitive
values accord to a magnetic north pole on the branded
side of the package.

Fig. 2–6 and Fig. 2–7 show typi-

cal ADC-READOUT values for the different magneti c
field ranges and filter frequencies.

6000

4000

ADC­READOUT

2000

–2000

–4000

–6000

0

–200–150–100–50 0 50 100 150 200

Filter = 500 Hz

Fig. 2–6: Typical ADC-READOUT
versus magnetic field for filter = 500 Hz

Range 150 mT
Range 90 mT
Range 75 mT
Range 30 mT

B

mT

1500

1000

ADC­READOUT

500

0

–500

–1000

–1500

–200–150–100–50 0 50 100 150 200

Fig. 2–7: Typical ADC-READOUT
versus magnetic field for filter = 2 kHz

Filter = 2 kHz

Range 150 mT
Range 90 mT
Range 75 mT
Range 30 mT

mT

B

Micronas 7

HAL800

Range

The RANGE bits are the two lowest bits of the MODE
register; they define the magnetic field range of the
A/D converter.

RANGE Magnetic Field Range

0 −30 mT...30 mT
1 −75 mT...75 mT
2 −90 mT...90 mT
3 −150 mT...15 0 mT

Filter

The FILTER bit is the highest bit of the MODE register;
it defines the

−3 dB frequency of the digital low pass fil-

ter

FILTER −3 dB Frequency

02 kHz

For all calculations, the di gi tal value from th e magnetic
field of the A/D converter is use d. This digital i nforma­tion is readable from the ADC-READOUT register.

∆V

* 2048

Sensitivity =

∆ADC-READOUT * V

OUT

DD

VOQ

The VOQ register contains the parameter for the
Adder in the DSP. V

is the output voltage without

OQ

external magnetic fie ld (B = 0 mT) and programmable

− V

from

up to VDD. For VDD = 5 V the register can

DD

be changed in steps of 4.9 mV.
Note: If V

is programmed to a negative voltage, the

OQ

maximum output voltage is limited to:

V

OUTmax

= VOQ + V

DD

For calibration in the system environment, a 2-point
adjustment procedure
mended. The suitable Sensitivity and V

(see Section 2.3.) is recom-

valu es for

OQ

each sensor can be ca lculated indi viduall y by this pro­cedure.

1 500 Hz

TC and TCSQ

The temperature dependence of the magnetic sensitiv­ity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaption is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coeffi­cient). Thereby, the slope and the curvature of the
magnetic sensitivity can be matched to the magnet
and the sensor as sembly. As a result, the output volt­age characteristic c an be fixed over the full tempera­ture range. The sensor can compensate for linear tem­perature coefficients in the range from about -2900
ppm/K up to 700 ppm/K and quadratic coefficients
from about -5 ppm/K² to 5 ppm/K². Please refer to

Section 4.2. on page 17 for the recommended setti ngs

for different linear temperature coefficients.

Sensitivity

The SENSITIVITY register contains the parameter for
the Multiplier in the DSP. The Sensitivity is programma­ble between -4 and 4. For V

= 5 V the register can

DD

be changed in steps of 0.00049. Sensiti vity = 1 corre­sponds to an increase o f the output voltage by V

DD

if

the ADC-READOUT increases by 2048.

Clamping Voltage

The output voltage range can be clamped in order to
detect failures like shorts to V

or GND.

DD

The CLAMP-LOW register co ntains the parameter for
the lower limit. The lower clamping voltage is program­mable between 0 V and V

/2. For VDD = 5 V the reg-

DD

ister can be changed in steps of 2.44 mV.
The CLAMP-HIGH reg ister contains the parameter for

the higher limit. The higher clamping voltage is pro­grammable between 0 V and V

. For VDD = 5 V in

DD

steps of 2.44 mV.

LOCK

By setting this 1-bit register, all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation.

Warning: This register cannot be reset!

ADC-READOUT

This 14-bit register delivers the actual digital value of
the applied magnetic field before the signal process­ing. This regist er can be read o ut and is the bas is for
the calibration proce dure of the sensor in the s ystem
environment.

8 Micronas