Micronas Intermetall HAL300UA-E, HAL300UA-C, HAL300UA-A, HAL300SO-E, HAL300SO-C Datasheet

HAL300
Differential Hall Effect
Sensor IC

Edition July 15, 1998
6251-345-1DS

MICRONAS

MICRONAS

HAL300

Differential Hall Effect Sensor IC

in CMOS technology

Introduction

The HAL 300 is a differential Hall switch produced in
CMOS technology . The sensor includes 2 temperature­compensated Hall plates (2.05 mm apart) with active off­set compensation, a differential amplifier with a Schmitt
trigger, and an open-drain output transistor (see Fig. 2).

The HAL300 is a differential sensor which responds to
spatial differences of the magnetic field. The Hall volt­ages at the two Hall plates, S

and S2, are amplified with

1

a differential amplifier. The differential signal is
compared with the actual switching level of the internal
Schmitt trigger. Accordingly, the output transistor is
switched on or off.

The sensor has a bipolar switching behavior and re­quires positive and negative values of ∆B = B

– BS2 for

S1

correct operation.
The HAL300 is an ideal sensor for applications with a ro-

tating multi-pole-ring in front of the branded side of the
package (see Fig. 4 and Fig. 5), such as ignition timing,
anti-lock brake systems, and revolution counting.

– operates with magnetic fields from DC to 10 kHz
– output turns low with magnetic south pole on branded

side of package and with a higher magnetic flux densi­ty in sensitive area S1 as in S2

– on-chip temperature compensation circuitry mini-

mizes shifts of the magnetic parameters over temper­ature and supply voltage range

– the decrease of magnetic flux density caused by rising

temperature in the sensor system is compensated by
a built-in negative temperature coefficient of hystere­sis

– EMC corresponding to DIN 40839

Marking Code

Type Temperature Range

A E C

HAL300SO,
HAL300UA

300A 300E 300C

Operating Junction Temperature Range (TJ)

For applications in which a magnet is mounted on the
back side of the package (back-biased applications), the
HAL320 is recommended.

The active offset compensation leads to constant mag­netic characteristics over supply voltage and tempera­ture.

The sensor is designed for industrial and automotive ap­plications and operates with supply voltages from 4.5 V
to 24 V in the ambient temperature range from –40 °C
up to 150 °C.

The HAL300 is available in a SMD-package (SOT-89A)
and in a leaded version (TO-92UA).

Features:

– distance between Hall plates: 2.05 mm
– operates from 4.5 V to 24 V supply voltage
– switching offset compensation at 62 kHz
– overvoltage protection
– reverse-voltage protection at V

DD

-pin

– short-circuit protected open-drain output by thermal

shutdown

= –40 °C to +170 °C

A: T

J

E: T

= –40 °C to +100 °C

J

C: T

= 0 °C to +100 °C

J

The relationship between ambient temperature (T
junction temperature (T

) is explained on page 11.

J

) and

A

Hall Sensor Package Codes

HALXXXPA-T

Temperature Range: A, E, or C
Package: SO for SOT-89A,

UA for TO-92UA

Type: 300

Example: HAL300UA-E

→ Type: 300
→ Package: TO-92UA
→ Temperature Range: T

= –40 °C to +100 °C

J

Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.

2 Micronas

HAL300

Solderability

– Package SOT-89A: according to IEC68-2-58
– Package TO-92UA: according to IEC68-2-20

V

DD

1

OUT

3

2
GND

Fig. 1: Pin configuration

Functional Description

This Hall effect sensor is a monolithic integrated circuit
with 2 Hall plates 2.05 mm apart that switches in
response to differential magnetic fields. If magnetic
fields with flux lines at right angles to the sensitive areas
are applied to the sensor, the biased Hall plates force
Hall voltages proportional to these fields. The difference
of the Hall voltages is compared with the actual thresh­old level in the comparator. The temperature-dependent
bias increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the differential
magnetic field exceeds the threshold levels, the open
drain output switches to the appropriate state. The built­in hysteresis eliminates oscillation and provides
switching behavior of the output without oscillation.

Magnetic offset caused by mechanical stress at the Hall
plates is compensated for by using the “switching offset
compensation technique”: An internal oscillator pro­vides a two phase clock (see Fig. 3). The difference of
the Hall voltages is sampled at the end of the first phase.
At the end of the second phase, both sampled differen­tial Hall voltages are averaged and compared with the
actual switching point. Subsequently, the open drain
output switches to the appropriate state. The amount of
time that elapses from crossing the magnetic switch lev­el to the actual switching of the output can vary between
zero and 1/f

osc

.

HAL300

V

GND

Reverse

DD

Voltage &
Overvoltage

1

Protection

Hall Plate

S1

Hall Plate

S2

2

Temperature
Dependent
Bias

Switch

Hysteresis
Control

Comparator

Fig. 2: HAL300 block diagram

f

osc

DB

DB

ON

V

OUT

V

OH

V

OL

I

DD

1/f

= 16 µs

osc

Fig. 3: Timing diagram

Clock

t

f

Short Circuit &
Overvoltage
Protection

Output

t

t

t

t

t

OUT

3

Shunt protection devices clamp voltage peaks at the
Output-Pin and VDD-Pin together with external series
resistors. Reverse current is limited at the V

-Pin by an

DD

internal series resistor up to –15 V . No external reverse
protection diode is needed at the V

-Pin for values

DD

ranging from 0 V to –15 V.

3Micronas

HAL300

Outline Dimensions

0.125

0.7

±0.2

4

±0.05

1.53

±0.1

4.55

1.7

2

x1x

2

123

0.40.4

0.4

1.5

sensitive area S
sensitive area S

y

±0.1

2.6

top view

±0.1

0.48

0.55

4.06

2.03

x1x

2

123

0.5

y

3.1

3.05

14.0
min.

sensitive area S
sensitive area S

±0.1

1
2

1

2

1.5

±0.05

0.3

0.36

3.0

branded side

SPGS7001-6-B3/1E

Fig. 4:

Plastic Small Outline Transistor Package

(SOT-89A)

Weight approximately 0.04 g
Dimensions in mm

0.06

±0.04

0.42

1.271.27

2.54

branded side

45°

SPGS7002-6-B/1E

0.8

Fig. 5:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g
Dimensions in mm

Dimensions of Sensitive Areas

0.08 mm x 0.17 mm

Positions of Sensitive Areas

SOT-89A TO-92UA

x1 = –1.025 mm ± 0.2 mm

x2 = 1.025 mm ± 0.2 mm

x2 – x1 = 2.05 mm ± 0.01 mm

y = 0.98 mm ± 0.2 mm y = 1.0 mm ± 0.2 mm

x1 and x2 are referenced to the center of the package

4 Micronas

HAL300

Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

V

–V
–I

I

DDZ

DD

P

DD

Supply Voltage 1 –15 28
Test Voltage for Supply 1 –24
Reverse Supply Current 1 – 50
Supply Current through

1 –200

Protection Device

V

O

I

O

I

Omax

I

OZ

Output Voltage 3 –0.3 28
Continuous Output On Current 3 – 30 mA
Peak Output On Current 3 – 250
Output Current through

3 –200

Protection Device

T

S

T

J

1)

as long as TJmax is not exceeded

2)

with a 220 Ω series resistance at pin 1 corresponding to test circuit 1

3)

t<2 ms

4)

t<1000h

Storage Temperature Range –65 150 °C
Junction Temperature Range –40

–40

1)

2)

3)

3)

– V

1)

3)

200

1)

3)

3)

200

150

4)

170

V

mA
mA

V

mA
mA

°C

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only . Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi­mum ratings conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Symbol Parameter Pin No. Min. Max. Unit

V

DD

I

O

V

O

R

v

Supply Voltage 1 4.5 24 V
Continuous Output On Current 3 – 20 mA
Output Voltage 3 – 24 V
Series Resistor 1 – 270 Ω

5Micronas

HAL300

Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for T

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

= 25 °C and VDD = 12 V

J

I

DD

I

DD

V

DDZ

V

OZ

V

OL

V

OL

I

OH

I

OH

f

osc

f

osc

t

en(O)

Supply Current 1 4.0 5.5 6.8 mA TJ = 25 °C
Supply Current over

1 2.5 5 7.5 mA

T emperature Range
Overvoltage Protection

at Supply

1 – 28.5 32.5 V IDD = 25 mA, TJ = 25 °C,

t = 20 ms

Overvoltage Protection at Output 3 – 28 32.5 V IOL = 25 mA, TJ = 25 °C,

t = 20 ms

Output Voltage 3 – 180 250 mV VDD = 12 V, IO = 20 mA,

T

= 25 °C

J

Output Voltage over

3 – 180 400 mV IO = 20 mA

T emperature Range
Output Leakage Current 3 – 0.06 1 µA VOH = 4.5 V...24 V,

, TJ = 25 °C

OFF

, TJ ≤ 150 °C

OFF

Output Leakage Current over
T emperature Range

Internal Oscillator

DB < DB

3 – 0.06 10 µA VOH = 4.5 V...24 V,

DB < DB

– 42 62 75 kHz TJ = 25 °C

Chopper Frequency
Internal Oscillator Chopper Fre-

– 36 62 78 kHz

quency over T emperature Range
Enable Time of Output

after Setting of V

DD

3 – 35 – µs

VDD = 12 V,

DB > DB
DB < DB

ON
OFF

+ 2mT or

– 2mT

t

r

t

f

R

thJSB

case
SOT-89A

R

thJS

case
TO-92UA

Output Rise Time 3 – 80 400 ns VDD = 12 V, RL = 820 Ω,

CL = 20 pF

Output Fall Time 3 – 45 400 ns VDD = 12 V, RL = 820 Ω,

CL = 20 pF

Thermal Resistance Junction to
Substrate Backside

– 150 200 K/W Fiberglass Substrate

30 mm x 10 mm x 1.5mm,
pad size see Fig. 7

Thermal Resistance

– 150 200 K/W

Junction to Soldering Point

6 Micronas