Micronas Intermetall HAL115UA-K, HAL115UA-E, HAL115UA-C, HAL115SF-E, HAL115SF-C Datasheet
...
HAL114, HAL115
Hall Effect Sensor Family
Edition Dec. 20, 1999
6251-456-2DS
MICRONAS
MICRONAS
HAL11x
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
3 1.2. Family Overview
3 1.3. Marking Code
4 1.4. Operating Junction Temperature Range
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
4 2. Functional Description
5 3. Specifications
5 3.1. Outline Dimensions
5 3.2. Dimensions of Sensitive Area
5 3.3. Positions of Sensitive Areas
6 3.4. Absolute Maximum Ratings
6 3.5. Recommended Operating Conditions
7 3.6. Electrical Characteristics
8 3.7. Magnetic Characteristics
10 4. Type Descriptions
10 4.1. HAL114
12 4.2. HAL115
14 5. Application Notes
14 5.1. Application Circuit
14 5.2. Ambient Temperature
14 5.3. Extended Operating Conditions
14 5.4. Start-up Behavior
16 6. Data Sheet History
2 Micronas
HAL11x
Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 11x family consists of different Hall switches
produced in CMOS technology.
All sensors include a temperature-compensated Hall
plate, a comparator, and an open-drain output transistor .
The comparator compares the actual magnetic flux
through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output
transistor is switched on or off. The sensors of this family
differ in the switching behavior.
The sensors are designed for industrial and automotive
applications and operate with supply voltages from
4.5 V to 24 V in the ambient temperature range from
–40 °C up to 125 °C.
All sensors are available in an SMD-package (SOT-89B)
and in a leaded version (TO-92UA).
1.2. Family Overview
The types differ according to the mode of switching.
Type Switching Behavior see Page
HAL114 unipolar 10
HAL115 bipolar 12
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
Unipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
1.1. Features
– operates from 4.5 V to 24 V supply voltage
– overvoltage protection
– reverse-voltage protection at V
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic mag-
netic fields up to 20 kHz
– stable switching points over a wide supply voltage
range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the magnetic characteristics
DD
-pin
1.3. Marking Code
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type Temperature Range
K E C
HAL114 114K 114E 114C
HAL115 115K 115E 115C
3Micronas
HAL11x
G
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature TJ).
K: TJ = –40 °C to +140 °C
E: TJ = –40 °C to +100 °C
= 0 °C to +100 °C
C: T
J
The relationship between ambient temperature (TA) and
junction temperature is explained in section 5.2. on page
14.
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: K, E, or C
Package: SF for SOT-89B
UA for TO-92UA
(SO for SOT-89A)
Type: 11x
Example: HAL114UA-E
→ Type: 114
→ Package: TO-92UA
→ Temperature Range: T
= –40 °C to +100 °C
J
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
2. Functional Description
The HAL11x sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
Shunt protection devices clamp voltage peaks at the
Output-pin and V
resistors. Reverse current is limited at the V
-pin together with external series
DD
-pin by an
DD
internal series resistor up to –15 V . No external reverse
protection diode is needed at the V
-pin for reverse
DD
voltages ranging from 0 V to –15 V.
HAL11x
Reverse
V
DD
ND
1
2
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Comparator
Short Circuit &
Overvoltage
Protection
Output
OUT
3
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40 °C and 90% relative humidity.
V
DD
1
OUT
3
2
GND
Fig. 1–1: Pin configuration
Fig. 2–1: HAL11x block diagram
4 Micronas
3. Specifications
3.1. Outline Dimensions
0.125
0.7
±0.2
4
min.
0.25
1.53
±0.05
123
±0.1
4.55
x1 x2
1.7
2
0.4
1.5
3.0
HAL11x
±0.1
0.48
0.55
0.42
4.06
x2x1
123
1.271.27
(2.54)
±0.2
0.75
sensitive area
y
±0.1
3.05
±0.2
3.1
14.0
min.
±0.05
1.5
0.3
sensitive area
y
±0.1
2.6
top view
0.40.4
0.36
branded side
±0.04
SPGS7001-7-A3/2E
0.06
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
Note: The SOT-89A package will be discontinued in
2000 and be replaced by the SOT-89B package.
±0.1
4.55
x1 x2
0.125
0.3
±0.2
4
min.
0.25
±0.05
1.15
1.7
2
123
0.40.4
0.4
1.5
3.0
y
2.55
sensitive area
±0.1
top view
branded side
45°
SPGS7002-7-A/2E
0.8
Fig. 3–3:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
Note: For all package diagrams, a mechanical tolerance
of ±50 µm applies to all dimensions where no tolerance
is explicitly given.
3.2. Dimensions of Sensitive Area
0.4 mm x 0.2 mm
3.3. Positions of Sensitive Areas
SOT-89A SOT-89B TO-92UA
|x2 – x1| / 2 < 0.2 mm
y = 0.98 mm
± 0.2 mm
y = 0.95 mm
± 0.2 mm
y = 1.0 mm
± 0.2 mm
branded side
SPGS0022-3-A3/2E
Fig. 3–2:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
0.06
±0.04
5Micronas
HAL11x
3.4. Absolute Maximum Ratings
Symbol Parameter Pin No. Min. Max. Unit
V
DD
–V
P
–I
DD
I
DDZ, IOZ
V
O
I
O
I
Omax
T
S
T
J
1)
as long as TJmax is not exceeded
2)
with a 220 Ω series resistor at pin 1
3)
t<2 ms
Supply Voltage 1 –15 28
Test Voltage for Supply 1 –24
Reverse Supply Current 1 – 50
Current through Protection Devices 1 or 3 –200
Output Voltage 3 –0.3 28
Continuous Output On Current 3 – 30
Peak Output On Current 3 – 250
Storage Temperature Range –65 150 °C
Junction Temperature Range –40 150 °C
2)
3)
1)
– V
1)
3)
200
1)
1)
3)
V
mA
mA
V
mA
mA
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only . Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol Parameter Pin No. Min. Max. Unit
V
DD
I
O
V
O
Supply Voltage 1 4.5 24 V
Continuous Output On Current 3 0 20 mA
Output Voltage
3 0 24 V
(output switched off)
R
V
1)
see Fig. 5–1 on page 14
Series Resistor
1)
1 270 Ω
6 Micronas
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