• Form factor: 8-pad microSD memory card (11mm ×
15mm)
• Density1: 32GB, 64GB, 128GB, 256GB
• SD Physical Layer Specification version 5.10
compliant
– microSD Card Specification version 4.20
– SD memory card file system specification
– SD memory card security specification
– Content protection for recordable media (CPRM)
– Secure digital music initiative (SDMI)-compliant
– Password protection of cards
– Supports secure digital interface (SD) and serial
peripheral interface (SPI)
• Mean time to failure (MTTF): 2 million hours (targeting)
• Endurance: Total bytes written (TBW)
– 32GB: up to 22TB
– 64GB: up to 45TB
– 128GB: up to 90TB
– 256GB: up to 180TB
• Surveillance recording capability
– 32GB: 24/7 recording @2 Mb/s for 3 years
– 64GB: 24/7 recording @4 Mb/s for 3 years
– 128GB: 24/7 recording @8 Mb/s for 3 years
– 256GB: 24/7 recording @16 Mb/s for 3 years
• Health monitoring: Available
• Performance
– Refer to Performance and Capacity (page 6)
for read and write speed
• Bus speed mode (theoretical transfer rate @x4 bits)
– Default: 3.3V signaling up to 12.5 MB/s @25 MHz
– High-speed: 3.3V signaling up to 25 MB/s @50
MHz
– SDR12: UHS-I 1.8V signaling up to 12.5 MB/s
@25 MHz
– SDR25: UHS-I 1.8V signaling up to 25 MB/s @50
MHz
– SDR50: UHS-I 1.8V signaling up to 50 MB/s @100
MHz
2
3
4
– SDR104: UHS-I 1.8V signaling up to 104 MB/s
@208 MHz
– DDR50: UHS-I 1.8V signaling up to 50 MB/s @50
MHz (sampled on both clock edges)
• Integrated power-on reset, oscillator, voltage regulation, and voltage detection circuits
• Built-in features for defect and error management
– Strong error correction code implemented
– Global wear leveling
– Bad block management
– Refresh mechanism for UECC prevention
– Sudden power-off (SPO) protection
• Operating voltage: 2.7–3.6V
• Temperature
– Operating: –25°C to +85°C
– Storage: –40°C to +85°C
• Standards compliance
– RoHS
– FCC
– CE
– BSMI
– KC RRA
– W.E.E.E.
– VCCI
– IC
• Halogen-free
Notes:
1. Actual usable capacity may vary. 1GB equals
1 billion bytes.
2. SD Specifications, Part 1, Physical Layer
Specification, version 5.10.
3. SD Specifications, Part 1, microSD Card
Specification, version 4.20.
4. Contact Micron factory for details.
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Products and specifications discussed herein are subject to change by Micron without notice.
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Micron microSD memory cards are available in different configurations and densities. Verify valid part numbers
by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for cards not found.
Figure 1: Marketing Part Number Chart
Note:
1. Not all combinations are necessarily available. For a list of available devices or for further information on
any aspect of these products, please contact your nearest Micron sales office.
Table 1: Ordering Information
Part NumberCapacity
MTSD032AHC6MS-1WT32GB
MTSD064AHC6MS-1WT64GB
MTSD128AHC6MS-1WT128GB
MTSD256AHC6MS-1WT256GB
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2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized
by Micron.
Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.
Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage
("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the
Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron
component for any critical application, customer and distributor shall indemnify and hold harmless Micron and
its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the
Micron product.
Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included
in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component.
Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,
breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly
authorized representative.
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3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
The microSD card is an advanced Micron® 3D NAND Flash memory technology based
removable storage device specifically designed to meet the performance, capacity, and
quality required for industrial devices or systems. In addition to mass storage-specific
Flash memory, the microSD card includes an on-board intelligent controller which
manages interface protocols, security algorithms for content protection, data storage
and retrieval, as well as error correction code (ECC) algorithms, defect handling, sudden
power-off safeguard and wear leveling.
The microSD card includes one or more NAND Flash memory components and a microSD card controller. The density of a card depends on the number of die within the
package and the density of each die.
Figure 2: Functional Block Diagram
Micron Confidential and Proprietary
Industrial microSDHC and microSDXC Card
General Description
SD protocol
CPU
Data buffer
Note:
Media
manager
1. Not drawn to scale.
NAND Flash interface
Micron
NAND Flash
Micron
NAND Flash
(optional)
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4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Figure 3: microSD Card Pad Assignment (Bottom View)
Table 2: MicroSD Contact Pad Description
Pad Assignment and Descriptions
Pad #
1DAT2
SymbolType1DescriptionSymbol Type1Description
2
I/O/PPData line [Bit 2]RSV–Reserved
2CD/DAT32I/O/PP3Card detect/data line [Bit 3]CSI
SD ModeSPI Mode
3
Chip select (active low)
3CMDPPCommand/responseDIIData in
4V
DD
SSupply voltageV
DD
SSupply voltage
5CLKIClockSCLKIClock
6V
SS
SSupply voltage groundV
SS
SSupply voltage ground
7DAT0I/O/PPData line [Bit 0]DOO/PP Data out
8DAT1
2
I/O/PPData line [Bit 1]RSV–Reserved
Notes:
1. S: power supply; I: input; O: output using push-pull drivers; PP: I/O using push-pull drivers.
2. The extended DAT lines (DAT1-DAT3) are input on power-up. They start to operate as
DAT lines after SET_BUS_WIDTH (ACMD6) command. The host shall keep its own DAT1DAT3 lines in input mode, as well, while they are not used.
3. After power-up, pad 2 is configured as an input with an internal 50kΩ pull-up (for card
detection and SPI mode selection). The pull-up should be disconnected prior to regular
data transfer by issuing the SET_CLR_CARD_DETECT (ACMD42) command.
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5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Using a striping method across multiple NAND Flash devices the card read and write
performance is optimized.
The Industrial microSD cards also use performance features of the underlying NAND
Flash to increase speed in streaming applications. By sending larger packets of sequential data, the Industrial microSD card can better utilize NAND Flash features to enhance
performance.
Table 3: Measured Performance (25°C, VDD = 3.3V)
Industrial microSDHC and microSDXC Card
Performance and Capacity
Density
1
Sequential Read
2
Sequential Write
2
32GB90 MB/s25 MB/s
64GB90 MB/s45 MB/s
128GB90 MB/s45 MB/s
256GB90 MB/s45 MB/s
Notes:
1. 1GB = 1 billion bytes.
2. Measurements are based on a 100MB file size in UHS-I mode and depend on the host
configuration used to run the test.
Capacity
When quoting device capacity, Micron uses the formatted capacity, not the raw number
of bytes available.
Table 4: Bytes Available After Factory Formatting (FAT32 for SDHC card and exFAT for SDXC card)
Density
1
Usable Bytes
2
Speed Class
3
32GB29,884,416,000Class10, U1Class1 (A1)
64GB59,760,443,392Class10, U1Class1 (A1)
128GB124,688,269,312Class10, U1Class1 (A1)
256GB249,376,538,624Class10, U1Class1 (A1)
Application Performance
3, 4
Class
Notes:
1. 1GB = 1 billion bytes.
2. Actual user usable capacity. When cloning disk partitions, the master disk should always
3. Class is determined by Testmetrix VTE4100 Compliance Test.
4. Enable users to run their smartphone apps from the installed memory card.
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be formatted to no more than the minimum guaranteed usable bytes available for that
card capacity.
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
The 32-bit operation conditions register defines the supported operating voltage ranges
for the power supply and supported access modes of the microSD card. Additionally,
this register includes status information bits.
Table 5: OCR Field Parameters
OCR-SliceOCR ValueDescription
[31]1b (ready)/0b (busy)Card power-up status bit (busy)
[30]1bCard Capacity Status (CCS)
[29:25]0 0000bReserved
[24]1b (switching)/0b (maintained)Switching to 1.8V Accepted (S18A)
[23:15]1 1111 1111bVDD: 2.7–3.6V range
[14:0]000 0000 0000 0000bReserved
Micron Confidential and Proprietary
Industrial microSDHC and microSDXC Card
OCR Register
1
2
Notes:
1. This bit is set to LOW if the card has not finished the power-up routine.
2. This bit is valid only when the card power-up status bit is set.
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7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
The card identification (CID) register is 128 bits wide. It contains the device identification information used during the card identification phase as required by SD protocol.
Each card is created with a unique identification number.
Table 6: CID Register Field Parameters
NameFieldWidthCID-SliceCID Value
Manufacturer IDMID8[127:120]09h
OEM/Application IDOID16[119:104]41 50h
32GB: MB33A
Product namePNM40[103:64]
Product revisionPRV8[63:56]–
Product serial numberPSN32[55:24]–
Reserved–4[23:20]–
Manufacturing dateMDT12[19:8]–
CRC7 checksumCRC7[7:1]–
Not used, always 1–1[0]1
64GB: MB43A
128GB: MB53A
256GB: MB63A
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8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
The card-specific data (CSD) register provides information about accessing the card
contents. The CSD register defines the data format, error correction type, maximum data access time, as well as whether the DSR register can be used, and so forth. The programmable part of the register (entries marked with W in the following table) can be
changed by the PROGRAM_CSD (CMD27) command. The types of the entries in the table below are coded as follows: R = readable, W(1) = writable once, W = multiple writable.
Table 7: CSD Register Field Parameters
Industrial microSDHC and microSDXC Card
CSD Register
NameFieldWidthCell TypeCSD-SliceCSD Value
CSD structureCSD_STRUCTURE2R[127:126]01b
Reserved–6R[125:120]00 0000b
Data read access timeTAAC8R[119:112]0Eh
Data read access time in CLK cycles (NSAC × 100)
Maximum data transfer rateTRAN_SPEED8R[103:96]-
Card command classesCCC12R[95:84]010110110101b
Maximum read data block
length
Partial blocks for read allowedREAD_BL_PARTIAL1R[79:79]0
In addition to the CSD register, there is another configuration register named SD card
configuration register (SCR). SCR provides information on the SD Memory Card's special features that were configured into the given card. The size of SCR register is 64 bits.
The types of all bits of SCR are R = readable.
Table 8: CSD Register Field Parameters
Cell
DescriptionFieldWidth
SCR structureSCR_STRUCTURE4R[63:60]0000b
SD memory card – Specification
version
Data status after erasesDATA_STAT_AFTER_ERASE1R[55:55]0
CPRM security supportSD_SECURITY3R[54:52]100b
DAT bus widths supportedSD_BUS_WIDTHS4R[51:48]0101b
Specification version 3.00 or laterSD_SPEC31R[47:47]1b
Stresses greater than those listed in Table 10 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any
other conditions outside those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
Table 10: Absolute Maximum Ratings
Parameter/ConditionMinMaxUnit
VDD supply voltage2.73.6V
Storage temperature–40+85°C
Table 11: Recommended Operating Conditions
Parameter/ConditionSymbolMinTypMaxUnit
Operating temperatureT
Supply voltageV
Regulator supply voltage for 1.8V signalingV
Ground supply voltageV
A
DD
DDIO
SS
–25–+85°C
2.73.33.6V
1.71.81.95V
000V
DC Characteristics
Table 12: DC Voltage Characteristics for 3.3V signaling
ParameterSymbolMinMaxUnitComments
Input low voltageV
Input high voltageV
Output low voltageV
Output high voltageV
IL
IH
OL
OH
Table 13: DC Voltage Characteristics for 1.8V signaling
ParameterSymbolMin
Input low voltageV
Input high voltageV
Output low voltageV
Output high voltageV
IL
IH
OL
OH
Vss - 0.300.25 × V
0.625 × V
DD
VDD + 0.30V
–0.125 × V
0.75 × V
DD
1
Max
DD
DD
–VIOH = –2mA @ VDD (MIN)
1
V
VIOL = 2mA @ VDD (MIN)
UnitComments
Vss - 0.300.58V
1.272.00V
–0.45VIOL = 2mA
1.40–VIOH = –2mA
Note:
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1. As signaling level is generated by regulator in host and card, some of the values are defined by fixed value rather than based on VDD.
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Timing specifications including clock timing, input and output timings for all bus
modes are defined in SD Specifications. Refer to Section 6.6 and 6.7 of Part 1, Physical
Layer Specification, version 5.10 for detail information.
Electrostatic Discharge (ESD)
Contacts pads:
• Human body model of ±4kV according to IEC61000-4-2.
Non contacts pad area:
• Coupling plane discharge of ±8kV.
• Air discharge of ±15kV.
• Human body model according to IEC61000-4-2.
Micron Confidential and Proprietary
Industrial microSDHC and microSDXC Card
Electrical Specifications
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14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Figure 4 provides the physical dimensions of Micron microSD card. For detail dimensions and tolerances, refer to SDA microSD Card Addendum, Section 3.0 Mechanical
Specification for microSD Memory Card.
Figure 4: microSD Card – 11mm × 15mm
Industrial microSDHC and microSDXC Card
Package Dimensions
Note:
1. Dimensions are in millimeters.
Table 14: Package Specifications
ParameterDescriptions
SurfacePlain (except contact area)
EdgesSmooth edges
Weight0.25gm
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
• BSMI (Taiwan): approval to CNS 13438 Class B and CNS 15663
• KC RRA (Korea): approval to KN32 Class B, KN 35 Class B
FCC Rules
R-REM-MU2-MTSDXXXAHC6MS
• W.E.E.E.: compliance with EU WEEE directive 2012/19/EC. Additional obligations
may apply to customers who place these products in the markets where WEEE is enforced.
• VCCI (Japan): 2015-04 Class B
• IC (Canada): ICES-003 Class B
- This Class B digital apparatus complies with Canadian ICES-003.
- Cet appareil numérique de la classe B est conforme à la norme NMB-003 du Canada.
- CAN ICES-3 (B)/NMB-3(B).
This equipment has been tested and found to comply with the limits for a Class B digital
device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and
used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user
is encouraged to try to correct the interference by one or more of the following measures:
• Reorient or relocate the receiving antenna.
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Micron Technology, Inc. reserves the right to change products or specifications without notice.