• Power consumption: 9W (TYP) and 12W (MAX)
– Configurable through information exceptions
mode page
• Operating temperature
– 0°C to +50°C (MAX)
Notes:
Warranty: Contact your Micron sales representative
for further information regarding the product, including product warranties.
1. Product achieves a mean time to failure
(MTTF) based on population statistics that
are not relevant to individual units.
2. 1GB = 1 billion bytes; formatted capacity is
less.
3. Based on ambient air temperature.
4. Total bytes written (TBW): Warranty defined in the product manual is five years or
device expiration as indicated by the device
life indicator, whichever comes first.
3
4
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‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Typical I/O performance numbers: measured using an iometer in a steady state region with a queue depth of
32 for sequential and random transfers and write cache enabled; a queue depth of 1 for READ/WRITE latency values.
2. Consistent host system interface, configurations, and variables: maintained with variation only in the drive
being tested.
3. Response time measurement conditions: recorded with nominal power at 25 °C ambient temperature.
4. Page-to-page response times: derived from all possible page-to-page accesses on a sequentially preconditioned drive.
5. Average response time: derived from at least 5000 access measurements between programmable pages on a
randomly preconditioned drive to ensure a true statistical random average.
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2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Micron’s solid state drive (SSD) uses a single-chip controller with a dual-port SAS interface on the system side and 10 channels of Micron NAND Flash internally. Packaged in
an HDD replacement enclosure, the SSD integrates easily into existing storage infrastructures.
The SSD is designed to support and manage the needs of highly available, high-performance platforms that use significant read/write mixed workloads. Optimized to support enterprise needs previously supported only by single-level cell (SLC) solutions, this
SSD provides endurance and data integrity required by growing environments.
Each device is set to report its logical block address (LBA) settings, which ensure sufficient storage per device capacity. The tables below show LBA settings according to device size.
Standard OEM models are formatted to 512 bytes per block. The block size is selectable
at format time, and users with the necessary equipment can modify the data block size
to capacities different than those listed below before issuing a format command. To
provide a stable target capacity environment while also providing users with flexibility,
Micron recommends product planning.
Micron ensures that current and future product generations will meet capacity points at
certain block sizes. Planning with this in mind ensures a stable operating point with
backward and forward compatibility across product generations. The current operating
points for each device are shown below. The capacity stated is identical when the drive
is formatted with or without PI enabled.
Programmable Drive Capacity
Preliminary
Logical Block Address Configuration
Using the MODE SELECT command, users can change the drive capacity to less than its
maximum value. A value of zero in the Number of Blocks field means that the MODE
SELECT command will leave the drive capacity unchanged. A value greater than zero
and less than the maximum number of LBAs in the Number of Blocks field means that
the MODE SELECT command will change the drive capacity to the value in the Number
of Blocks field. A value greater than the maximum number of LBAs means that the
MODE SELECT command will round down to the maximum capacity.
Table 2: Standard LBA Settings – 512-Byte Sector Size
Micron's 600 Series SAS SSD drives have two independent ports, which can be connected in the same or different SCSI domains. Each drive port has a unique SAS address.
The two ports are capable of independent port clocking. For example, both ports can
run at 12 Gb/s, or the first port can run at 12 Gb/s while the second runs at 6 Gb/s. Supported link rates are 3.0, 6.0, or 12.0 Gb/s.
Subject to buffer availability, SSD drives support the following:
• Concurrent port transfers: Supports receiving COMMAND and TASK management
transfers on both ports simultaneously
• Full duplex transfers: Supports sending XFER_RDY, DATA, and RESPONSE transfers
while receiving frames on both ports
Interface Connectors
The SAS signal segment interface cable has four transmission conductors and three
ground conductors for each channel. As shown in the figure below, the cable includes
two 7-pin signal segments (primary and secondary) and a 15-pin power segment arranged in a single row with a 1.27mm (0.050 inch) pitch.
Weight
(grams)
Figure 4: SSD Interface Connections
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SAS drives use the device connector for the following:
• DC power
• SAS interface (dual port)
• Activity LED (DAS)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Table 14: SAS Response to Task Management Functions
Function NameResponse Code
Function complete0
Invalid frame2
Function not supported4
Function failed5
Function succeeded8
Invalid logical unit9
Thin Provisioning
The device supports thin provisioning and the READ CAPACITY 16 (9Eh) command, but
the level of thin provisioning support varies by product model. Thin provisioning returns a default data pattern from a READ command to a logical block even when that
block is not mapped to a physical block by a previous WRITE command.
To determine whether thin provisioning is supported and which of its features are implemented, a READ CAPACITY 16 (9Eh) command must be issued to the drive. The
LBPME (logical block provisioning management enabled) bit settings indicate whether
the logical unit implements LBPM (logical block provisioning management). The
LBPME and LBPRZ (logical block provisioning read zeros) bit settings are shown in the
table immediately below.
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14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
LBPRZNYLBPRZ = 1For an unmapped LBA specified by a READ opera-
Support
Non-SED
Support
Bit SettingsDescription
LBPM is implemented.
provisioned)
LBPME = 0 (Logical unit is fully
provisioned)
LBPRZ = 0For an unmapped LBA specified by a READ opera-
LBPM is not implemented.
tion, the device server sends to the data-in buffer
user data with all bits set to 0.
tion, the device server sends to the data-in buffer
user data with all bits set to any value.
UNMAP Command
The UNMAP command requests that the device server break the association of a specific LBA from a physical block, thereby freeing up the physical block from use and no longer requiring it to contain user data. An unmapped block will respond to a READ command with data that is determined by the setting of the LBPRZ bit in the read capacity
parameter data.
Protection Information (PI) and Security (SED)
Requirements in this section apply to any device that supports LBA unmapping. In a
SCSI device, an umapped LBA is defined as part of the thin provisioning model, whose
support is indicated by an LBPME bit value of 1 in the read capacity parameter data.
When a cryptographic ERASE command erases a region of LBAs, the drive unmaps
those LBAs. And when the host attempts to access an unmapped or trimmed LBA, the
drive returns scrambled data.
For a given LBA, data is identical from access to access until it is either updated from
the host or is cryptographically erased. Then the drive reports an LBPRZ bit value of 0 in
the read capacity parameter data
When the host attempts access to an unmapped LBA on a drive that has been formatted
with protection information (PI), the drive returns scrambled PI data for that LBA.
Depending on the value of the RDPROTECT field in the data-access command CDB, the
drive might return a standard PI error to the host. When a host reduces a drive's addressable capacity via a MODE SELECT command, the drive unmaps or trims any LBA
within the inaccessible region of the device. Additionally, an UNMAP command is not
permitted on a locked band. PI and SED drive configuration information is shown below.
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
The device may be formatted either as a thin provisioned device or a fully provisioned
device. Thin provisioned is the default format and is recommended for most applications. Thin provisioning provides the most flexibility for the device to manage the Flash
medium to maximize endurance.
Table 17: Format Unit Command Execution Times for 512-Byte LBAs
Preliminary
Format Unit
Format
Mode
Non-SED Configuration
Thin
provisioned
(Default)
Thin
provisioned
(Default)
Fully
provisioned
Fully
provisioned
SED Configuration
Thin
provisioned
(Default)
Thin
provisioned
(Default)
Fully
provisioned
Fully
provisioned
DCRT
BitIPBit
00555555555minutes
10555555555
01101010101010101010
11101010101010101010
00555555555minutes
10555555555
01430430430430430430430430430
11280280280280280280280280280
All S600DC Series Devices (Capacity in GB)
Unit2004004808009601600192032003840
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
A Micron SSD incorporates advanced technology for defect and error management, using various combinations of hardware-based error correction algorithms and firmwarebased static and dynamic wear-leveling algorithms.
Over the life of the SSD, uncorrectable errors may occur. An uncorrectable error is defined as data that the device reports as successfully programmed, but when read, the
data differs from what was programmed.
The following reliability specifications assume correct host and drive operational interface, including all interface timings, power supply voltages, environmental requirements, and drive mounting constraints.
Table 24: Uncorrectable Bit Error Rate
Read Error RatesREAD Operation
Less than 1 LBA in 1017 bits transferredUnrecovered READ
Less than 1 LBA in 1021 bits transferredMis-corrected READ
Preliminary
Reliability
Note:
1. Error rate specified with automatic retries and data correction with ECC enabled and all
flaws reallocated.
Mean Time between Failures
SSD mean time to failure (MTTF) and mean time between failures (MTBF) are predictable based on component reliability data using the methods referenced in the Telcordia
SR-332 reliability prediction procedures for electronic equipment.
Table 25: MTBF
Capacity
200GB2.50.35
400GB2.50.35
480GB2.50.35
800GB2.50.35
960GB2.50.35
1600GB2.50.35
1920GB2.50.35
3200GB2.50.35
3840GB2.50.35
MTBF (Million Hours)Failure Rate (% per-Year)
All S600DC Series Devices
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26
Micron Technology, Inc. reserves the right to change products or specifications without notice.
As a NAND Flash device ages with use, its capability to retain a programmed value is
affected by the number of PROGRAM and ERASE operations to its cells, causing deterioration. When new, the device has a powered-off data retention capability of several
years, but with use, data retention is reduced.
Temperature also affects how long the device retains its programmed value when power
is removed. High temperature reduces retention capability when power is off, but is not
an issue when power is applied. The SSD drive contains firmware and hardware features that can monitor and refresh memory cells when power is applied.
Table 26: Data Retention and Drive Writes per-Day
Preliminary
Reliability
Device and Capacity
S655DC
200GB325
400GB325
S650DC
400GB310
800GB310
1600GB310
3200GB310
S630DC
400GB33
480GB33
800GB32
960GB33
1600GB32
1920GB33
3200GB32
3840GB33
S610DC
1920GB3<1
3840GB3<1
Typical Data Retention
with Power Removed (Months)
1
Drive Writes per-Day (DWPD)
Note:
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1. Typical data retention with power removed, at 40 °C and up to 90% of write endurance.
27
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Endurance rating is the expected amount of host data that can be written by product
when subjected to a specified workload at a specified operating and storage temperature over the specified product life. For the specific workload to achieve this level of endurance, refer to JEDEC specification JESD218. TBW is defined as 1 x 1012 bytes.
200GB8000TBW
400GB17,000
400GB7000TBW
800GB14,000
1600GB29,000
3200GB58,000
400GB2100TBW
480GB2600
800GB2900
960GB5200
1600GB5800
1920GB10,000
3200GB12,000
3840GB21,000
1920GB2800TBW
3840GB5600
Notes:
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1. Limited warranty with media usage provides coverage either for the warranty period or
until the SSD percentage used endurance indicator reaches 100, whichever comes first.
2. TBW per the JEDEC JESDS218 specification assuming typical workloads are 50% sequential and 50% random and consist of the following: 5% are 4KB; 5% are 8KB; 10% are
16KB; 10% are 32KB; 35% are 64KB; and 35% are 128KB.
28
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Device DC power (+12V and +5V) is through the standard SAS interface. Typical power
measurements listed below are based on an average of drives tested, under nominal
conditions, using the listed input voltage at 60°C internal temperature. Measurements
are made at 12Gb interface speeds.
• Startup power: Measured from power-on to when the drive reaches operating condition and can process media access commands.
• Peak operating mode power: Measured by testing the drive in various read and write
access patterns that simulate worst case power consumption.
• Idle mode power: Measured when the drive is powered up and ready for media access
commands, but before the host has sent the commands.
Note: Stresses greater than those listed in the following tables may cause permanent
damage to the device. These are stress ratings only and device operation above ratings
or conditions listed in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Preliminary
S600DC Series 2.5-Inch SAS NAND Flash SSD
Electrical Characteristics
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Measured with average reading DC ammeter. Instantaneous +12V current peaks will exceed these values. Power supply at nominal voltage. Number of drives tested = 6 at 60
°C internal.
2. Sequential READ and WRITE operations are based on 128K block transfer at queue
depth = 32.
Identifier and Supported Settings
Supported power consumption identifier settings are shown in the table below. An INQUIRY SCSI command or MODE SENSE command can be used to query VPD page
0x8D for supported power levels and associated identifiers.
The MODE SENSE and SELECT commands can be used to read, write, and modify the
mode page 0x1A, subpage 1. When the SELECT command is used to write a new identifier value, the value is saved in nonvolatile memory, unchanged until modified.
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
• CE (Europe): EN55022, 2006 + A1:2007 and EN55024, 1998 + A1: 2001 + A2:2003
• FCC: CFR Title 47, Part 15 Class A
• UL (US): approval to UL-60950-1, 2nd Edition, IEC 60950-1:2005, 2nd Edition; Am
1:2009, EN 60950-1 (2006) + A11:2009+ A1:2010 + A12:2011
• BSMI (Taiwan): approval to CNS 13438
• C-TICK (Australia, New Zealand): approval to AS/NZS CISPR22
• KCC RRL (Korea): approval to KCC-REM-MU2
• W.E.E.E.: Compliance with EU WEEE directive 2002/96/EC. Additional obligations
may apply to customers who place these products in the markets where WEEE is enforced.
• TUV (Germany): approval to IEC60950/EN60950
• V
CCI
Preliminary
S600DC Series 2.5-Inch SAS NAND Flash SSD
Regulatory Compliance
FCC Rules
This equipment has been tested and found to comply with the limits for a Class A digital
device, pursuant to part 15 of the FCC rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a
commercial environment.. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instruction manual,
may cause harmful interference to radio communications. Operation of this equipment
in a residential area is likely to cause harmful interference in which case the user will be
required to correct the interference at one’s own expense.
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Micron Technology, Inc. reserves the right to change products or specifications without notice.