Micron's P320h solid state drive (SSD) is targeted at applications that require high performance and enterprise-class storage reliability. The P320h delivers extremely high
IOPS performance due to its ability to support up to 256 outstanding commands while
ensuring full end-to-end data protection.
The P320h comes in a half-height, half-length (HHHL) form factor and uses a secondgeneration (Gen2) PCIe x8 lane interface on the host side and 32 ONFI 2.1-compliant
channels on the Flash side.
Figure 2: Functional Block Diagram
P320h HHHL PCIe NAND SSD
General Description
PDF: 09005aef848cbdf4
realssd_p320h_hhhl_distribution.pdf - Rev. V 8/2014 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
The single-chip, Micron-developed ASIC controller, along with the host and Flash interfaces, provide an embedded ATA host bus adapter, a host/Flash translation layer, Flash
maintenance, channel control, and Flash RAID (RAIN) protection.
Flash endurance and reliability are optimized through the Flash maintenance features,
including static and dynamic wear leveling and RAIN protection. Most of these functions are implemented directly within the controller hardware to optimize performance. The device is shipped in the configurations shown below.
Table 1: P320h HHHL Configurations
User CapacityNAND Flash ProcessNAND Flash DensityPackage CountDie per BGA Package
350GB34nm16Gb644
700GB34nm16Gb648
Performance Specifications
Table 2: Performance Specifications
Specification350GB700GB
Sequential read (up to)3.2 GB/s3.2 GB/s
Sequential write (up to)1.9 GB/s1.9 GB/s
Random read (up to)785,000 IOPS785,000 IOPS
Random write (up to)175,000 IOPS205,000 IOPS
READ latency<47µs<47µs
WRITE latency<311µs (nonposted)<311µs (nonposted)
Notes:
1. Transient peaks above 25W are possible under heavy write workloads. 10ms RMS average measurements taken.
2. Drive is erased and filled with zeroes to achieve preconditioned state .
3. 128KB transfers are used for sequential read/write values; 4KB transfers are used for
random read/write values.
4. I/O performance numbers are measured in steady state using FIO with a preconditioned
drive under RHEL 6.3 with a queue depth of 256 and with raw device access on systems
with a single Intel Xeon E5-2667 2.90 GHz processor with 6 cores, 12 logical and hyperthreading enabled.
5. Steady state performance is defined as conforming to the SNIA V1.0 Performance Test
Specification.
6. Performance numbers derived from tests at room temperature.
7. Latency performance numbers are measured using FIO with queue depth 1, random
transfer, 512-byte transfer size for READ latency, 4KB transfer size for WRITE latency.
8. Performance numbers are notated in base 10.
PDF: 09005aef848cbdf4
realssd_p320h_hhhl_distribution.pdf - Rev. V 8/2014 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Data retention refers to the SSD's media (NAND Flash) capability to retain programmed
data when the SSD is powered off. The two primary factors that influence data retention
are degree of use (the number of PROGRAM/ERASE cycles on the media) and temperature.
Degree of use: As NAND Flash is used (programmed and erased), its natural ability to
retain charge (programmed data) decreases. When the SSD ships from the factory, it is
typically able to retain user data for up to 10 years when powered off. As the SSD is used,
this typically decreases to one year.
Temperature: As the temperature increases, data retention decreases.
Note: All data retention related to values in the data sheet are with the SSD powered off.
When the SSD is powered on, data retention is expected to exceed these limits. Micron
SSD data retention with power removed is one year at 40°C (MAX).
Micron RAIN Technology
Redundant array of independent NAND (RAIN) is a technology developed by Micron
designed to extend the lifespan of the P320h.
P320h HHHL PCIe NAND SSD
Functional Description
Wear Leveling
Residing in the P320h ASIC controller, RAIN is similar to redundant array of independent disks (RAID) technology, but instead of grouping and striping disks, RAIN groups
and stripes storage elements on the SSD across multiple channels, generating and storing parity data along with user data (one page of parity for every seven pages of user
data). This data structure (user data plus parity) enables complete, transparent data recovery if a single storage element (NAND page, block, or die) fails. If a failure occurs, the
P320h automatically detects it and transparently rebuilds the data. During this RAIN rebuild process, the drive's performance is reduced temporarily but will recover after the
rebuild process completes.
Wear leveling is a technique that spreads Flash block use over the entire memory array
to equalize the PROGRAM/ERASE cycles on all blocks in the array. This helps to enhance the lifespan of the SSD. The P320h supports both static and dynamic wear leveling.
Static wear leveling considers all Flash blocks in the SSD regardless of data content or
access and maintains an even level of wear across the drive. Dynamic wear leveling
monitors available free space on the drive and dynamically moves data between Flash
blocks to equalize wear on each block. Both techniques are used together within the
controller to optimally balance the wear profile of the Flash array along with the drive's
lifespan.
PDF: 09005aef848cbdf4
realssd_p320h_hhhl_distribution.pdf - Rev. V 8/2014 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
90x09Power-on hours countNoLifetime powered-on hours, from the time the
device leaves the factory
120x0CPower cycle countNoCount of power cycles
1700xAANew failing block
NoGrown defects
count
1710xABProgram fail countNoNumber of NAND program status failures
1720xACErase fail countNoNumber of NAND erase status failures
1740xAEUnexpected power loss
NoNumber of unexpected power-loss occurrences
count
1870xBBReported uncorrecta-
NoNumber of ECC correction failures
ble errors count
1880xBCCommand timeout
count
NoNumber of command timeouts, defined by an
active command being interrupted by a HRESET,
COMRESET, SRST, or other command
1940xC2TemperatureNoThe on-die temperature sensor within the con-
troller ASIC in degrees C, capturing the lifetime
high and low temperatures measured
2020xCAPercentage of the rat-
ed lifetime used
NoCumulative erase count / lifetime erase count as
expressed as a percent. Lifetime erase count is
the total number of available blocks * block endurance for the flash technology, read directly
from the NAND device.
2320xE8Available reserved
space
NoPercentage of spare blocks remaining
Spare block count
2410xF1Power-on (minutes)NoLifetime power-on time in minutes
The number of logical block addresses (LBAs) reported by the P320h ensures sufficient
storage space for the specified capacity. Standard LBA settings based on the IDEMA
standard (LBA1-02) are shown below.
The host interface connector conforms to the PCIe Electromechanical Specification
V2.0, section 5, Table 5-1. It is an eight-lane, gold-finger connector with 1mm pitch
spacing.
A mechanical indent is used to separate the PCIe power pins from the differential signal
contacts. The pins are numbered below in ascending order from left to right. Side B refers to component side and Side A refers to the solder side.
Table 6: PCIe Interface Connector Pin Assignments
P320h HHHL PCIe NAND SSD
Interface Connectors
Pin
Number
1+12V12V powerPRSNT1#Hot Plug Presence Detect
2+12V12V power+12V12V power
3+12V12V power+12V12V power
4GNDGroundGNDGround
5SMCLKDNUJTAG2DNU
6SMDATDNUJTAG3DNU
7GNDGroundJTAG4DNU
8+3.3VDNUJTAG5DNU
9JTAG1DNU+3.3VDNU
103.3VauxDNU+3.3VDNU
11WAKE#DNUPERST#PCIe Reset
Mechanical Key
12RSVDReservedGNDGround
13GNDGroundREFCLK+PCIe REFCLK p
14PETp0PCIe TX Lane 0 pREFCLK-PCIe REFCLK n
15PETn0PCIe TX Lane 0 nGNDGround
16GNDGroundPERp0PCIe RX Lane 0 p
17PRSNT2#Hot Plug Presence DetectPERn0PCIe RX Lane 0 n
18GNDGroundGNDGround
19PETp1PCIe TX Lane 1 pRSVDReserved
20PETn1PCIe TX Lane 1 nGNDGround
21GNDGroundPERp1PCIe RX Lane 1 p
22GNDGroundPERn1PCIe RX Lane 1 n
23PETp2PCIe TX Lane 2 pGNDGround
24PETn2PCIe TX Lane 2 nGNDGround
25GNDGroundPERp2PCIe RX Lane 2 p
26GNDGroundPERn2PCIe RX Lane 2 n
27PETp3PCIe TX Lane 3 pGNDGround
28PETn3PCIe TX Lane 3 pGNDGround
29GNDGroundPERp3PCIe RX Lane 3 p
NameDescriptionNameDescription
Side BSide A
PDF: 09005aef848cbdf4
realssd_p320h_hhhl_distribution.pdf - Rev. V 8/2014 EN
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Micron’s SSDs incorporate advanced technology for defect and error management.
They use various combinations of hardware-based error correction algorithms and
firmware-based static and dynamic wear-leveling algorithms.
Over the life of the SSD, uncorrectable errors may occur. An uncorrectable error is defined as data that is reported as successfully programmed to the SSD but when it is read
out of the SSD, the data differs from what was programmed.
Table 8: Uncorrectable Bit Error Rate
Uncorrectable Bit Error RateOperation
1 sector per 1017 bits readREAD
Mean Time to Failure
The mean time to failure (MTTF) for the device can be predicted based on the component reliability data using the methods referenced in the Telcordia SR-322 reliability
prediction procedures for electronic equipment.
Table 9: MTTF
P320h HHHL PCIe NAND SSD
Reliability
CapacityMTTF (Operating Hours)
350GB
700GB
2 million
Endurance
Endurance for the device can be predicted based on the usage conditions applied to the
device, the internal NAND component PROGRAM/ERASE cycles, the write amplification factor, and the wear-leveling efficiency of the drive. The table below shows the
drive lifetime for each SSD density based on predefined usage conditions. The SSD implements wear leveling in hardware to optimize performance and efficiency while
maintaining Flash endurance.
Table 10: Drive Lifetime
CapacityWorkloadTotal Bytes Written Drive Fills Per DayRetention
350GB4KB random writes25PB391 year
128KB sequential writes50PB781 year
700GB4KB random writes50PB391 year
128KB sequential writes100PB781 year
PDF: 09005aef848cbdf4
realssd_p320h_hhhl_distribution.pdf - Rev. V 8/2014 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Table 11: Operating Voltage and Power
Electrical CharacteristicValue
Voltage requirement+12Vdc (±8%)
Active power25W RMS
Standby power (idle)10W
Table 12: Environmental Conditions
Temperature and AirflowMinMaxUnitNotes
Operating temperature (as indicated by SMART temperature)
Operating ambient temperature055°C2
Storage temperature (in system)040°C3
Storage temperature (offline)–4085°C4
Operating airflow1.0–m/s5
085°C1
Notes:
1. If SMART temperature exceeds 85°C, write performance is throttled.
2. Temperature of air impinging on the drive.
3. Assumes system is powered off and ready to be powered on.
4. Contact Micron for additional information.
5. Airflow must flow along the length of the drive, parallel to and through any cooling
fins; 1.5m/s operating airflow is recommended.
Table 13: Shock and Vibration
Parameter/ConditionSpecification
Shock400g at 2ms
Vibration3.1 grms 5–800Hz at 30 min/axis
PDF: 09005aef848cbdf4
realssd_p320h_hhhl_distribution.pdf - Rev. V 8/2014 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
• KC (Korea) - EN55022/EN55024 Class A, KCC-REM-MU2-P320hHHHL
References
This equipment has been tested and found to comply with the limits for a Class A digital
device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a
commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instruction manual,
may cause harmful interference to radio communications. Operation of this equipment
in a residential area is likely to cause harmful interference in which case the user will be
required to correct the interference at his own expense.
• PCI Express Base Specification V2.1
• PCI Express CEM Specification V2.0
• ATA8-ACS2 Specification
• IDEMA Specification
• Telcordia SR-322 Procedures
• SNIA Performance Test Specification V1.0
PDF: 09005aef848cbdf4
realssd_p320h_hhhl_distribution.pdf - Rev. V 8/2014 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.