Micron MTFDDAK480T, MTFDDAK960T, MTFDDAK1T9T, MTFDDAK3T8T, MTFDDAK7T6T User Manual
5200 Series NAND Flash SSD
5200 Series SATA NAND Flash SSD
MTFDDAK480T, MTFDDAK960T, MTFDDAK1T9T, MTFDDAK3T8T,
MTFDDAK7T6T
Features
Features
• Micron® 3D TLC NAND Flash
• Two performance/endurance levels
– ECO
– PRO
• TCG Enterprise compliant self-encrypting drive
(SED)
• SATA 6 Gb/s interface
• ATA modes supported
– PIO mode 3, 4
– Multiword DMA mode 0, 1, 2
– Ultra DMA mode 0, 1, 2, 3, 4, 5, 6
• 512-byte sector size support
• Hot-plug capable
• Native command queuing support with 32-command slot support
• ATA-8 ACS-3 revision 5 command set compliant
• ATA security feature command set and password
login support
• Security erase command set: fast and secure erase
• Performance (steady state)
– Sequential 128KB read: Up to 540 MB/s
– Sequential 128KB write: Up to 520 MB/s
– Random 4KB read: Up to 95,000 IOPS
– Random 4KB write: Up to 33,000 IOPS
• Quality of Service
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– Read/Write (99.9%): 200µs/300µs (<2TB)
– Read/Write (99.999%): 1000µs/700µs (<2TB)
• Endurance4: Total bytes written (TBW)
– Up to 8400TB
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• Reliability
– MTTF: 3.0 million device hours
3
– Static and dynamic wear leveling
– Uncorrectable bit error rate (UBER): <1 sector
per 1017 bits read
– End-to-end data protection
– Enhanced power-loss data protection with data
protection capacitor monitoring
• Self-monitoring, analysis, and reporting technology
(SMART) command set
• Capacity4 (unformatted): 480GB, 960GB, 1920GB,
3840GB, 7680GB
• Mechanical:
– 2.5-inch x 7.0mm form factor
• RoHS-compliant package
• Secure field-upgradeable firmware with digitally
signed firmware image
• Power consumption: <6.0W (TYP, 5V only)
• Operating temperature
– Commercial (0°C to 70°C)
Notes:
1. Performance varies by capacity and endurance.
2. 4KB transfers QD = 1 used for READ/WRITE
latency values.
3. The product achieves a MTTF based on population statistics not relevant to individual
units.
4. 1GB = 1 billion bytes.
5. As reported by SMART.
5
Warranty: Contact your Micron sales representative
for further information regarding the product,
including product warranties.
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Products and specifications discussed herein are subject to change by Micron without notice.
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© 2017 Micron Technology, Inc. All rights reserved.
MT FD D AK 960 T DC - 1 AT 1 ES
Micron Technology
Product Family
FD = Flash drive
Drive Interface
D = SATA 6.0 Gb/s
Drive Form Factor
AK = 2.5-inch (7mm)
Drive Capacity
960 = 960GB
NAND Flash Type
T = TLC
Product Family
DC = 5200 ECO
Production Status
Blank = Production
ES = Engineering sample
Customer Designator
YY = Standard
Hardware Features
AB = Standard
TA = TAA Compliant
Extended Firmware Features
Z = None
6 = SED TCG eSSC
Sector Size
1 = 512 byte
NAND Flash Component
AT = 512Gb, TLC, x16, 1.8V (3D)
BOM Revision
For example:
1 = 1st generation
2 = 2nd generation
AB6 YY
7T6 = 7680GB
3T8 = 3840GB
1T9 = 1920GB
480 = 480GB
DD = 5200 PRO
5200 Series NAND Flash SSD
Features
Part Numbering Information
Micron’s 5200 SSD is available in different configurations and densities. The chart below is a comprehensive list of
options for the 5200 series devices; not all options listed can be combined to define an offered product. Visit mi-
cron.com for a list of valid part numbers.
Figure 1: Part Number Chart
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General Description
NAND
NAND
SATA
NAND
NAND
SSD
controller
DRAM
buffer
Micron’s 5200 solid state drive (SSD) uses a single-chip controller with a SATA interface
on the system side and four channels of Micron NAND Flash internally. Available in the
2.5-inch form factor, the SSD integrates easily in existing storage infrastructures.
The SSD is designed to use the SATA interface efficiently during both READs and
WRITEs while delivering bandwidth-focused performance. SSD technology enables enhanced boot times, faster application load times, reduced power consumption and extended reliability.
The self-encrypting drive (SED) features an AES-256 encryption engine, providing hardware-based, secure data encryption, with no loss of SSD performance. This SED follows
the TCG Enterprise specification for trusted peripherals. When TCG Enterprise features
are not enabled, the device can perform alternate data encryption by invoking the ATA
security command set encryption features, to provide full disk encryption (FDE) managed in the host system BIOS. TCG Enterprise and ATA security feature sets cannot be
enabled simultaneously.
The data encryption is always running; however, encryption keys are not managed and
the data is not secure until either TCG Enterprise or ATA security feature sets are enabled.
5200 Series NAND Flash SSD
General Description
Figure 2: Functional Block Diagram
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5200 Series NAND Flash SSD
Performance
Performance
Measured performance can vary for a number of reasons. The major factors affecting
drive performance are the capacity of the drive and the interface/HBA of the host. Additionally, overall system performance can affect the measured drive performance. When
comparing drives, it is recommended that all system variables are the same, and only
the drive being tested varies.
Performance numbers will vary depending on the host system configuration. Performance is measured using a single drive directly attached (no RAID) to an integrated SATA
controller.
Table 1: Drive Performance – ECO
Capacity Unit
Parameter
Sequential read (128KB transfer) 540 540 540 540 540 MB/s
Sequential write (128KB transfer) 385 520 520 520 520 MB/s
Random read (4KB transfer) 81,000 95,000 95,000 95,000 95,000 IOPS
Random write (4KB transfer) 33,000 28,000 22,000 17,000 9500 IOPS
Random 70/30 R/W (4KB transfer) 43,000 49,000 42,000 46,000 26,000 IOPS
READ latency (99.9%) 200 200 200 200 200 µs
WRITE latency (99.9%) 300 300 300 500 900 µs
READ latency (99.999%) 1000 1000 1000 1000 1000 µs
WRITE latency (99.999%) 700 700 700 10,000 18,000 µs
480GB 960GB 1920GB 3480GB 7680GB
Notes:
1. Performance measured using FIO with a queue depth of 32 in the steady state region.
2. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.
3. System variations and HBA used will affect measured results.
Table 2: Drive Performance – PRO
Capacity Unit
Parameter
Sequential read (128KB transfer) 540 540 MB/s
Sequential write (128KB transfer) 520 520 MB/s
Random read (4KB transfer) 95,000 95,000 IOPS
Random write (4KB transfer) 32,000 32,000 IOPS
Random 70/30 R/W (4KB transfer) 53,000 53,000 IOPS
READ latency (99.9%) 200 200 µs
WRITE latency (99.9%) 300 300 µs
READ latency (99.999%) 1000 1000 µs
WRITE latency (99.999%) 700 700 µs
Notes:
1. Performance measured using FIO with a queue depth of 32 in the steady state region.
2. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.
3. System variations and HBA used will affect measured results.
960GB 1920GB
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5200 Series NAND Flash SSD
Logical Block Address Configuration
Logical Block Address Configuration
The drive is set to report the number of logical block addresses (LBAs) that will ensure
sufficient storage space for the specified capacity. Standard LBA settings, based on the
IDEMA standard (LBA1-03), are shown below.
Table 3: Standard LBA Settings – 512-Byte Sector Size
User Available
Total LBA Max LBA
Capacity
480GB 937,703,088 37E436B0 937,703,087 37E436AF 480,103,981,056
960GB 1,875,385,008 6FC81AB0 1,875,385,007 6FC81AAF 960,197,124,096
1920GB 3,750,748,848 DF8FE2B0 3,750,748,847 DF8FE2AF 1,920,383,410,176
3840GB 7,501,476,528 1BF1F72B0 7,501,476,527 1BF1F72AF 3,840,755,982,336
7680GB 15,002,931,888 37E3E92B0 15,002,931,887 37E3E92AF 7,681,501,126,656
Decimal Hexadecimal Decimal Hexadecimal (Unformatted)
Bytes
Reliability
Micron’s SSDs incorporate advanced technology for defect and error management.
They use various combinations of hardware-based error correction algorithms and
firmware-based static and dynamic wear-leveling algorithms.
Over the life of the SSD, uncorrectable errors may occur. An uncorrectable error is defined as data that is reported as successfully programmed to the SSD but is unable to be
later read back without error.
Table 4: Uncorrectable Bit Error Rate
Uncorrectable Bit Error Rate Operation
<1 sector per 1017 bits READ
Mean Time to Failure
Mean time to failure (MTTF) for the SSD can be predicted based on the component reliability data using the methods referenced in the Telcordia SR-332 reliability prediction
procedures for electronic equipment.
Table 5: MTTF
Capacity MTTF (Operating Hours)
All capacities 3.0 million
Note:
1. The product achieves a MTTF of 3.0 million hours based on population statistics not relevant to individual units.
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Endurance
5200 Series NAND Flash SSD
Reliability
Endurance for the SSD can be predicted based on the usage conditions applied to the
device, the internal NAND component cycles, the write amplification factor, and the
wear-leveling efficiency of the drive. Total bytes written measured with 55°C case temperature within the total bytes written values listed in this document. The table below
shows the drive lifetime for each SSD capacity based on predefined usage conditions.
Table 6: Drive Lifetime
Drive Lifetime (Total Bytes Written)
Capacity
480GB 870 – TB
960GB 1750 2270
1920GB 3500 5950
3840GB 7700 –
7680GB 8400 –
UnitECO PRO
Notes:
1. Total bytes written were calculated assuming drive is 100% full (user capacity) and a
workload of 100% random, aligned 4KB writes.
2. 1TB = 1,000,000,000,000
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Electrical Characteristics
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Table 7: SATA Power Consumption (5V Only) – 2.5-inch
5200 Series NAND Flash SSD
Electrical Characteristics
Capacity Idle Average
Sequential Write
(128KB transfer)
Sequential Read
(128KB transfer)
480GB 1.5W 3.0W 2.5W
960GB 1.5W 3.6W 2.8W
1920GB 1.5W 3.6W 3.0W
3840GB 1.5W 3.3W 2.5W
7680GB 1.5W 3.3W 2.5W
Notes:
1. Data taken at 25°C using a 6 Gb/s SATA interface.
2. Sequential power measured during FIO with 128KB transfer, RMS average over a 500ms
window.
Table 8: Maximum Ratings
Parameter/Condition Symbol Min Max Unit
Voltage input (2.5-inch)
Operating temperature
Non-operating temperature – –40 85 °C
Rate of temperature change – – 20 °C/hour
Relative humidity (non-condensing) – 5 95 %
1
2
Notes:
V12 10.8 13.2 V
V5 4.5 5.5 V
T
C
0 70 °C
1. 5V supply required; 12V supply optional
2. Based upon drive temperature reported by SMART
Table 9: Shock and Vibration
Parameter/Condition Specification
Non-operating shock 1500G/0.5ms
Rotary vibration, non-operating 5–800Hz at 3.13 Grms
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5200 Series NAND Flash SSD
Device ID
Table 10: Identify Device
See Note 1 for setting definitions
Word Bit(s) Setting Default Value Description
0 – – – General configuration bit-significant information
15 F 0b 0 = ATA device
14–8 X 0000100b Retired
7–6 X 01b Obsolete
5–3 X 000b Retired
2 V 0b Response incomplete
1 X 0b Retired
0 F 0b Reserved
1 – X 3FFFh Obsolete
2 – F C837h Specific configuration
3 – X 0010h Obsolete
4–5 – X 0000h 0000h Retired
6 – X 003Fh Obsolete
7–8 – V 0000h 0000h
9 – X 0000h Retired
10–19 – F Varies Serial number (20 ASCII characters)
20–22 – X 0000h 0000h 0000h Retired/obsolete
23–26 – F Varies Firmware revision (8 ASCII characters)
27–46 – F Varies Model number (40 ASCII characters)
47 15–8 F 80h 80h
7–0 F 10h 00h = Reserved
48 – – – Trusted Computing feature set options
15 F 0b Shall be cleared to zero
14 F 1b Shall be set to one
13–1 F 0000000000000b Reserved for the Trusted Computing Group
0 F 0b/1b 1 = Trusted Computing feature set is supported
Reserved for assignment by the CompactFlash™ Association
01h-FFh = Maximum number of logical sectors that shall be
transferred per DRQ data block on READ/WRITE MULTIPLE commands
This bit will be 1 for TCG drives, otherwise 0
Device ID
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5200 Series NAND Flash SSD
Device ID
Table 10: Identify Device (Continued)
See Note 1 for setting definitions
Word Bit(s) Setting Default Value Description
49 – – – Capabilities
15–14 F 00b Reserved for the IDENTIFY PACKET DEVICE command
13 F 1b 1 = Standby timer values as specified in this standard are sup-
ported
0 = Standby timer values shall be managed by the device
12 F 0b Reserved for the IDENTIFY PACKET DEVICE command
11 F 1b 1 = IORDY is supported
0 = IORDY may be supported
10 F 1b 1 = IORDY may be disabled
9 F 1b 1 = LBA is supported
8 F 1b 1 = DMA is supported
7–2 F 000000b Reserved
1–0 V 00b Long physical sector alignment error reporting
50 – – – Capabilities
15 F 0b Shall be cleared to zero
14 F 1b Shall be set to one
13–2 F 000000000000b Reserved
1 X 0b Obsolete
0 F 1b Shall be set to one to indicate a vendor-specific standby timer
value minimum
51–52 – X 0000h 0000h Obsolete
53 15–8 V 00h Free-fall control sensitivity: 00h = Vendor's recommended set-
ting
01h–FFh = Sensitivity level
7–3 F 00000b Reserved
2 F 1b 1 = The fields reported in word 88 are valid
0 = The fields reported in word 88 are not valid
1 F 1b 1 = The fields reported in words (70:64) are valid
0 = the fields reported in words (70:64) are not valid
0 X 0b Obsolete
54–58 – X 3FFFh 0010h
003Fh FC10h
00FBh
Obsolete
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