Micron MTFDDAK240T, MTFDDAK480T, MTFDDAK960T, MTFDDAK1T9T, MTFDDAK3T8T User Manual

5100 Series NAND Flash SSD

5100 Series SATA NAND Flash SSD

MTFDDAK240T, MTFDDAK480T, MTFDDAK960T,
MTFDDAK1T9T, MTFDDAK3T8T, MTFDDAK7T6T
MTFDDAV240T, MTFDDAV480T, MTFDDAV960T,
MTFDDAV1T9T

Features

Features

• Micron® 3D TLC NAND Flash

• Three performance/endurance levels
– ECO
– PRO
– MAX

• TCG Enterprise compliant self-encrypting drive
(SED)

• FIPS 140-2 level 2 validation option available on
specific configurations

• SATA 6 Gb/s interface

• ATA modes supported
– PIO mode 3, 4
– Multiword DMA mode 0, 1, 2
– Ultra DMA mode 0, 1, 2, 3, 4, 5, 6

• 512-byte sector size support

• Hot-plug capable (2.5-inch only)

• Native command queuing support with 32-com­mand slot support

• ATA-8 ACS-3 revision 5 command set compliant

• ATA security feature command set and password
login support

• Security erase command set: fast and secure erase

• Performance (steady state)
– Sequential 128KB read: Up to 540 MB/s
– Sequential 128KB write: Up to 520 MB/s
– Random 4KB read: Up to 93,000 IOPS
– Random 4KB write: Up to 74,000 IOPS

• Quality of Service

2

– Read/Write (99.9%): 500µs/500µs
– Read/Write (99.999%): 9ms/5ms

• Endurance4: Total bytes written (TBW)
– ECO: Up to 8,400TB
– PRO: Up to 17,600TB
– MAX: Up to 17,600TB

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• Reliability
– MTTF: 2.0 million device hours

3

– Static and dynamic wear leveling
– Uncorrectable bit error rate (UBER): <1 sector

per 1017 bits read
– End-to-end data protection
– Enhanced power-loss data protection with data

protection capacitor monitoring

• Self-monitoring, analysis, and reporting technology
(SMART) command set

• Capacity4 (unformatted): 240GB, 480GB, 960GB,
1920GB, 3840GB, 7680GB

• Mechanical:
– 2.5-inch x 7.0mm form factor
– M.2 Type 2280 form factor

• RoHS-compliant package

• Secure field-upgradeable firmware with digitally
signed firmware image

• Power consumption: 240GB/480GB: <4.5W(TYP);
960GB: <5.0W(TYP); 1920GB: <5.5W(TYP); 3840GB/
7680GB: <6.0W(TYP)

• Operating temperature
– Commercial (0°C to 70°C)

Notes:

1. Performance varies by capacity and endur­ance.

2. 4KB transfers QD = 1 used for READ/WRITE
latency values.

3. The product achieves a MTTF based on pop­ulation statistics not relevant to individual
units.

4. 1GB = 1 billion bytes; formatted capacity is
less.

5. As reported by SMART.

5

Warranty: Contact your Micron sales representative
for further information regarding the product,
including product warranties.

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Products and specifications discussed herein are subject to change by Micron without notice.

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© 2016 Micron Technology, Inc. All rights reserved.

MT FD D AK 480 T BY - 1 AR 1 ES

Micron Technology

Product Family

FD = Flash drive

Drive Interface

D = SATA 6.0 Gb/s

Drive Form Factor

AK = 2.5-inch (7mm)
AV = M.2 (80mm x 22mm)

Drive Capacity

240 = 240GB
480 = 480GB
960 = 960GB

NAND Flash Type

T = TLC

Product Family

BY = 5100 ECO
CB = 5100 PRO
CC = 5100 MAX

Production Status

Blank = Production
ES = Engineering sample

Customer Designator

YY = Standard

Hardware Features

AB = Standard
FC = FIPS140-2 validated
TA = TAA Compliant

Extended Firmware Features

Z = None
6 = SED TCG eSSC

Sector Size

1 = 512 byte

NAND Flash Component

AR = 384Gb, TLC, x16, 1.8V (3D)

BOM Revision

For example:
1 = 1st generation
2 = 2nd generation

AB6 YY

7T6 = 7680GB

3T8 = 3840GB

1T9 = 1920GB

5100 Series NAND Flash SSD

Features

Part Numbering Information

Micron’s 5100 SSD is available in different configurations and densities. The chart below is a comprehensive list of
options for the 5100 series devices; not all options listed can be combined to define an offered product. Visit mi­cron.com for a list of valid part numbers.

Figure 1: Part Number Chart

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General Description

Micron’s 5100 solid state drive (SSD) uses a single-chip controller with a SATA interface
on the system side and four channels of Micron NAND Flash internally. Available in
both M.2 and 2.5-inch form factors, the SSD integrates easily in existing storage infra­structures.

The SSD is designed to use the SATA interface efficiently during both READs and
WRITEs while delivering bandwidth-focused performance. SSD technology enables en­hanced boot times, faster application load times, reduced power consumption and ex­tended reliability.

The self-encrypting drive (SED) features a FIPS validated, AES-256 encryption engine,
providing hardware-based, secure data encryption, with no loss of SSD performance.
This SED follows the TCG Enterprise specification for trusted peripherals. When TCG
Enterprise features are not enabled, the device can perform alternate data encryption
by invoking the ATA security command set encryption features, to provide full disk en­cryption (FDE) managed in the host system BIOS. TCG Enterprise and ATA security fea­ture sets cannot be enabled simultaneously.

The data encryption is always running; however, encryption keys are not managed and
the data is not secure until either TCG Enterprise or ATA security feature sets are ena­bled.

5100 Series NAND Flash SSD

General Description

Figure 2: Functional Block Diagram

SATA

SSD

controller

DRAM
buffer

NAND

NAND

NAND

NAND

NAND

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5100 Series NAND Flash SSD

Performance

Performance

Measured performance can vary for a number of reasons. The major factors affecting
drive performance are the capacity of the drive and the interface of the host. Addition­ally, overall system performance can affect the measured drive performance. When
comparing drives, it is recommended that all system variables are the same, and only
the drive being tested varies.

Performance numbers will vary depending on the host system configuration.

Table 1: Drive Performance – ECO

Capacity

Parameter

Sequential read (128KB transfer) 540 540 540 540 540 MB/s

Sequential write (128KB transfer) 380 520 520 520 520 MB/s

Random read (4KB transfer) 93,000 93,000 93,000 93,000 93,000 IOPS

Random write (4KB transfer) 31,000 28,000 24,000 18,000 9000 IOPS

Random 70/30 R/W (4KB transfer) 49,000 47,000 43,000 36,000 21,000 IOPS

READ latency (99.9%) 500 500 500 500 500 µs

WRITE latency (99.9%) 500 500 500 500 500 µs

READ latency (99.999%) 9.0 9.0 9.0 9.0 9.0 ms

WRITE latency (99.999%) 5.0 5.0 5.0 5.0 5.0 ms

Unit480GB 960GB 1920GB 3840GB 7680GB

Notes:

1. Typical I/O performance numbers as measured using fio with a queue depth of 32.

2. Fio measurements are performed in the steady state region.

3. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.

4. System variations may affect measured results.

Table 2: Drive Performance – PRO

Capacity

Parameter

Sequential read (128KB transfer) 540 540 540 540 540 MB/s

Sequential write (128KB transfer) 250 410 520 520 520 MB/s

Random read (4KB transfer) 78,000 93,000 93,000 93,000 93,000 IOPS

Random write (4KB transfer) 26,000 43,000 37,000 38,000 36,000 IOPS

Random 70/30 R/W (4KB transfer) 43,000 55,000 54,000 57,000 54,000 IOPS

READ latency (99.9%) 500 500 500 500 500 µs

WRITE latency (99.9%) 500 500 500 500 500 µs

READ latency (99.999%) 9.0 9.0 9.0 9.0 9.0 ms

WRITE latency (99.999%) 5.0 5.0 5.0 5.0 5.0 ms

Notes:

1. Typical I/O performance numbers as measured using fio with a queue depth of 32.

2. Fio measurements are performed in the steady state region.

3. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.

4. System variations may affect measured results.

Unit240GB 480GB 960GB 1920GB 3840GB

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5100 Series NAND Flash SSD

Performance

Table 3: Drive Performance – MAX

Capacity

Parameter

Sequential read (128KB transfer) 540 540 540 540 MB/s

Sequential write (128KB transfer) 310 460 520 520 MB/s

Random read (4KB transfer) 93,000 93,000 93,000 93,000 IOPS

Random write (4KB transfer) 48,000 74,000 74,000 66,000 IOPS

Random 70/30 R/W (4KB transfer) 57,000 70,000 72,000 70,000 IOPS

READ latency (99.9%) 500 500 500 500 µs

WRITE latency (99.9%) 500 500 500 500 µs

READ latency (99.999%) 9.0 9.0 9.0 9.0 ms

WRITE latency (99.999%) 5.0 5.0 5.0 5.0 ms

Unit240GB 480GB 960GB 1920GB

Notes:

1. Typical I/O performance numbers as measured using fio with a queue depth of 32.

2. Fio measurements are performed in the steady state region.

3. 4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency values.

4. System variations may affect measured results.

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5100 Series NAND Flash SSD

Logical Block Address Configuration

Logical Block Address Configuration

The drive is set to report the number of logical block addresses (LBAs) that will ensure
sufficient storage space for the specified capacity. Standard LBA settings, based on the
IDEMA standard (LBA1-03), are shown below.

Table 4: Standard LBA Settings – 512-Byte Sector Size

User Available

Total LBA Max LBA

Capacity

240GB 468,862,128 1BF244B0 468,862,127 1BF244AF 240,057,409,536

480GB 937,703,088 37E436B0 937,703,087 37E436AF 480,103,981,056

960GB 1,875,385,008 6FC81AB0 1,875,385,007 6FC81AAF 960,197,124,096

1920GB 3,750,748,848 DF8FE2B0 3,750,748,847 DF8FE2AF 1,920,383,410,176

3840GB 7,501,476,528 1BF1F72B0 7,501,476,527 1BF1F72AF 3,840,755,982,336

7680GB 15,002,931,888 37E3E92B0 15,002,931,887 37E3E92AF 7,681,501,126,656

Decimal Hexadecimal Decimal Hexadecimal (Unformatted)

Bytes

Reliability

Micron’s SSDs incorporate advanced technology for defect and error management.
They use various combinations of hardware-based error correction algorithms and
firmware-based static and dynamic wear-leveling algorithms.

Over the life of the SSD, uncorrectable errors may occur. An uncorrectable error is de­fined as data that is reported as successfully programmed to the SSD but when it is read
out of the SSD, the data differs from what was programmed.

Table 5: Uncorrectable Bit Error Rate

Uncorrectable Bit Error Rate Operation

<1 sector per 1017 bits READ

Mean Time to Failure

Mean time to failure (MTTF) for the SSD can be predicted based on the component reli­ability data using the methods referenced in the Telcordia SR-332 reliability prediction
procedures for electronic equipment.

Table 6: MTTF

Capacity MTTF (Operating Hours)

All capacities 2.0 million

Note:

1. The product achieves a MTTF of 2.0 million hours based on population statistics not rele­vant to individual units.

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5100 Series NAND Flash SSD

Reliability

Endurance

Endurance for the SSD can be predicted based on the usage conditions applied to the
device, the internal NAND component cycles, the write amplification factor, and the
wear-leveling efficiency of the drive. Total bytes written measured with 55°C case tem­perature within the total bytes written values listed in this document. The table below
shows the drive lifetime for each SSD capacity based on predefined usage conditions.

Table 7: Drive Lifetime

Drive Lifetime (Total Bytes Written)

Capacity

240GB – 650 2,200 TB

480GB 450 1,300 4,400

960GB 900 4,400 8,800

1920GB 3,200 8,800 17,600

3840GB 6,400 17,600 –

7680GB 8,400 – –

UnitECO PRO MAX

Note:

1. Total bytes written were calculated assuming drive is 100% full (user capacity) and a
workload of 100% random, aligned 4KB writes.

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Electrical Characteristics

Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi­tions above those indicated in the operational sections of this specification is not im­plied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.

Table 8: SATA Power Consumption – 2.5-inch

5100 Series NAND Flash SSD

Electrical Characteristics

Sequential Write

Capacity Idle Average

240GB 2.5W <4.5W <4.5W

480GB 2.5W <4.5W <4.5W

960GB 2.5W 5W 5W

1920GB 2.5W <5.5W <5.5W

3840GB 2.5W <6W <6W

7680GB 2.5W 6W 6W

Notes:

1. Data taken at 25°C using a 6 Gb/s SATA interface.

2. Sequential power measured during Iometer with 128KB transfer, RMS average over a
500ms window.

(128KB transfer)

Sequential Read
(128KB transfer)

Table 9: SATA Power Consumption – M.2 Type 2280

Sequential Write

Capacity Idle Average

240GB 2.5W <4.5W <4.5W

480GB 2.5W <4.5W <4.5W

960GB 2.5W <5W <5W

1920GB 2.5W 5W 5W

(128KB transfer)

Sequential Read
(128KB transfer)

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Notes:

1. Data taken at 25°C using a 6 Gb/s SATA interface.

2. Sequential power measured during Iometer with 128KB transfer, RMS average over a
500ms window.

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5100 Series NAND Flash SSD

Electrical Characteristics

Table 10: Maximum Ratings

Parameter/Condition Symbol Min Max Unit

Voltage input (2.5-inch)

Voltage input (M.2) 3V3 3.14 3.46 V

Operating temperature

Non-operating temperature – –40 85 °C

Rate of temperature change – – 20 °C/hour

Relative humidity (non-condensing) – 5 95 %

1

V12 11.8 13.2 V

V5 4.5 5.5 V

2

T

C

0 70 °C

Notes:

1. 5V supply required; 12V supply optional

2. Based upon drive temperature reported by SMART

Table 11: Shock and Vibration

Parameter/Condition Specification

Non-operating shock 1500G/0.5ms

Non-operating vibration 5–800Hz at 3.13 Grms

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5100 Series NAND Flash SSD

Device ID

Device ID

Table 12: Identify Device

See Note 1 for setting definitions

Word Bit(s) Setting Default Value Description

0 – – – General configuration bit-significant information

15 F 0b 0 = ATA device

14–8 X 0000100b Retired

7–6 X 01b Obsolete

5–3 X 000b Retired

2 V 0b Response incomplete

1 X 0b Retired

0 F 0b Reserved

1 – X 3FFFh Obsolete

2 – F C837h Specific configuration

3 – X 0010h Obsolete

4–5 – X 0000h 0000h Retired

6 – X 003Fh Obsolete

7–8 – V 0000h 0000h Reserved for assignment by the CompactFlash™ Association

9 – X 0000h Retired

10–19 – F Varies Serial number (20 ASCII characters)

20–22 – X 0000h 0000h 0000h Retired/obsolete

23–26 – F Varies Firmware revision (8 ASCII characters)

27–46 – F Varies Model number (40 ASCII characters)

47 15–8 F 80h 80h

7–0 F 10h 00h = Reserved

01h-FFh = Maximum number of logical sectors that shall be
transferred per DRQ data block on READ/WRITE MULTIPLE com­mands

48 – – – Trusted Computing feature set options

15 F 0b Shall be cleared to zero

14 F 1b Shall be set to one

13–1 F 0000000000000b Reserved for the Trusted Computing Group

0 F 0b/1b 1 = Trusted Computing feature set is supported

This bit will be 1 for TCG drives, otherwise 0

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