Micron MTA18ASF4G72PZ – 32GB User Manual

DDR4 SDRAM RDIMM

Primary Side

Secondary Side

U15

U14

U13

U12

U11

U10

U9

U8

U20

U19

U18

U17

U16

U6

U5

U4

U3

U2

U6

U5

U4

U3

U7

U1

U2

Addendum

MTA18ASF4G72PZ – 32GB

32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM

Introduction

Introduction

Information provided here is in addition to or super­sedes information provided in the Micron DDR4
RDIMM Core data sheet.

Features

• DDR4 functionality and operations supported as
defined in the component data sheet

• Features and specifications defined in the Micron
DDR4 RDIMM Core data sheet

• 288-pin, registered dual in-line memory module
(RDIMM)

• Fast data transfer rates: PC4-3200, PC4-2933

• 32GB (4 Gig x 72)

• Single-rank

• 16 internal banks; 4 groups of 4 banks each

Table 1: Addressing

Figure 1: 288-Pin RDIMM (MO-309, R/C-C3)

Options Marking

• Operating temperature
– Commercial (0°C ≤ T

• Package
– 288-pin DIMM (halogen-free) Z

• Frequency/CAS latency
– 0.625ns @ CL = 22 (DDR4-3200) -3G2
– 0.682ns @ CL = 21 (DDR4-2933) -2G9

≤ 95°C) None

OPER

Parameter 32GB

Row address 256K A[17:0]

Column address 1K A[9:0]

Device bank group address 4 BG[1:0]

Device bank address per group 4 BA[1:0]

Device configuration 16Gb (4 Gig x 4), 16 banks

Module rank address 1 CS0_n

CCM005-341111752-10523
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Products and specifications discussed herein are subject to change by Micron without notice.

1

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2019 Micron Technology, Inc. All rights reserved.

32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM

Introduction

Table 2: Part Numbers and Timing Parameters – 32GB Modules

Base device: MT40A4G4,1 16Gb DDR4 SDRAM

Part Number

2

Density Configuration

MTA18ASF4G72PZ-3G2__ 32GB 4 Gig x 72 25.6 GB/s 0.625ns/3200 MT/s 22-22-22

MTA18ASF4G72PZ-2G9__ 32GB 4 Gig x 72 23.47 GB/s 0.682/2933 MT/s 21-21-21

Module

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-nRCD-nRP)

Notes:

1. The data sheet for the base device can be found on micron.com.

2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MTA18ASF4G72PZ-3G2B1.

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2

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2019 Micron Technology, Inc. All rights reserved.

32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM

Important Notes and Warnings

Important Notes and Warnings

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this docu­ment if you obtain the product described herein from any unauthorized distributor or other source not authorized
by Micron.

Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi­cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib­utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of non­automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and con­ditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to in­demnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.

Critical Applications. Products are not authorized for use in applications in which failure of the Micron compo­nent could result, directly or indirectly in death, personal injury, or severe property or environmental damage
("Critical Applications"). Customer must protect against death, personal injury, and severe property and environ­mental damage by incorporating safety design measures into customer's applications to ensure that failure of the
Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron
component for any critical application, customer and distributor shall indemnify and hold harmless Micron and
its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, or death arising in any way out of such critical application, whether or not Mi­cron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the
Micron product.

Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAIL­URE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included
in customer's applications and products to eliminate the risk that personal injury, death, or severe property or en­vironmental damages will result from failure of any semiconductor component.

Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,
breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly
authorized representative.

CCM005-341111752-10523
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3

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2019 Micron Technology, Inc. All rights reserved.

DQ Map

Table 3: Component-to-Module DQ Map

32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM

DQ Map

Component

Reference

Number

U2 0 3 157 U3 0 11 168

U4 0 19 179 U5 0 27 190

U6 0 CB3 201 U8 0 35 249

U9 0 43 260 U10 0 51 271

U11 0 59 282 U12 0 60 128

U13 0 52 117 U14 0 44 106

U15 0 36 95 U16 0 CB4 47

U17 0 28 36 U18 0 20 25

U19 0 12 14 U20 0 4 3

Component

DQ Module DQ

1 1 150 1 9 161

2 2 12 2 10 23

3 0 5 3 8 16

1 17 172 1 25 183

2 18 34 2 26 45

3 16 27 3 24 38

1 CB1 194 1 33 242

2 CB2 56 2 34 104

3 CB0 49 3 32 97

1 41 253 1 49 264

2 42 115 2 50 126

3 40 108 3 48 119

1 57 275 1 62 135

2 58 137 2 61 273

3 56 130 3 63 280

1 54 124 1 46 113

2 53 262 2 45 251

3 55 269 3 47 258

1 38 102 1 CB6 54

2 37 240 2 CB5 192

3 39 247 3 CB7 199

1 30 43 1 22 32

2 29 181 2 21 170

3 31 188 3 23 177

1 14 21

2 13 159

3 15 166

Module Pin

Number

Component

Reference

Number

Component

DQ Module DQ

1 6 10

2 5 148

3 7 155

Module Pin

Number

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Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2019 Micron Technology, Inc. All rights reserved.

32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM

IDD Specifications

IDD Specifications

Table 4: DDR4 IDD Specifications and Conditions – 32GB (Die Revision E)

Values are for the MT40A4G4 DDR4 SDRAM only and are computed from values specified in the 16Gb (4 Gig x 4) compo­nent data sheet.

Parameter Symbol 3200 2933 Units

One bank ACTIVATE-PRECHARGE current I

One bank ACTIVATE-PRECHARGE, word line boost, IPP current I

One bank ACTIVATE-READ-PRECHARGE current I

Precharge standby current I

Precharge standby ODT current I

Precharge power-down current I

Precharge quite standby current I

Active standby current I

Active standby IPP current I

Active power-down current I

Burst read current I

Burst write current I

Burst refresh current (1x REF) I

Burst refresh IPP current (1x REF) I

Self refresh current: Normal temperature range (0°C to 85°C) I

Self refresh current: Extended temperature range (0°C to 95°C) I

Self refresh current: Reduced temperature range (0°C to 45°C) I

Auto self refresh current (25°C) I

Auto self refresh current (45°C) I

Auto self refresh current (75°C) I

Auto self refresh current (95°C) I

Auto self refresh IPP current I

Bank interleave read current I

Bank interleave read IPP current I

Maximum power-down current I

DD0

PP0

DD1

DD2N

DD2NT

DD2P

DD2Q

DD3N

PP3N

DD3P

DD4R

DD4W

DD5R

PP5R

DD6N

DD6E

DD6R

DD6A

DD6A

DD6A

DD6A

PP6X

DD7

PP7

DD8

990 972 mA

54 54 mA

1188 1170 mA

900 882 mA

972 954 mA

774 774 mA

846 846 mA

1080 1062 mA

36 36 mA

864 846 mA

2286 2142 mA

1890 1818 mA

1224 1224 mA

72 72 mA

1026 1026 mA

2034 2034 mA

432 432 mA

324 324 mA

432 432 mA

918 918 mA

2034 2034 mA

108 108 mA

4032 3834 mA

162 162 mA

684 684 mA

CCM005-341111752-10523
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5

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2019 Micron Technology, Inc. All rights reserved.

32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM

IDD Specifications

Table 5: DDR4 IDD Specifications and Conditions – 32GB (Die Revision B)

Values are for the MT40A4G4 DDR4 SDRAM only and are computed from values specified in the 16Gb (4 Gig x 4) compo­nent data sheet.

Parameter Symbol 3200 2933 Units

One bank ACTIVATE-PRECHARGE current I

One bank ACTIVATE-PRECHARGE, word line boost, IPP current I

One bank ACTIVATE-READ-PRECHARGE current I

Precharge standby current I

Precharge standby ODT current I

Precharge power-down current I

Precharge quite standby current I

Active standby current I

Active standby IPP current I

Active power-down current I

Burst read current I

Burst write current I

Burst refresh current (1x REF) I

Burst refresh IPP current (1x REF) I

Self refresh current: Normal temperature range (0°C to 85°C) I

Self refresh current: Extended temperature range (0°C to 95°C) I

Self refresh current: Reduced temperature range (0°C to 45°C) I

Auto self refresh current (25°C) I

Auto self refresh current (45°C) I

Auto self refresh current (75°C) I

Auto self refresh current (95°C) I

Auto self refresh IPP current I

Bank interleave read current I

Bank interleave read IPP current I

Maximum power-down current I

DD0

PP0

DD1

DD2N

DD2NT

DD2P

DD2Q

DD3N

PP3N

DD3P

DD4R

DD4W

DD5R

PP5R

DD6N

DD6E

DD6R

DD6A

DD6A

DD6A

DD6A

PP6X

DD7

PP7

DD8

1080 1062 mA

72 72 mA

1260 1242 mA

936 918 mA

1008 990 mA

774 774 mA

846 846 mA

1404 1386 mA

54 54 mA

1242 1224 mA

3096 2952 mA

2952 2826 mA

1422 1404 mA

90 90 mA

1206 1206 mA

2178 2178 mA

522 522 mA

180 180 mA

522 522 mA

1098 1098 mA

2178 2178 mA

198 198 mA

4284 4158 mA

198 198 mA

720 720 mA

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6

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2019 Micron Technology, Inc. All rights reserved.

DQ
DQ
DQ
DQ
ZQ

DQ0
DQ1
DQ2
DQ3

Vss

U2

DQ
DQ
DQ
DQ
ZQ

DQ4
DQ5
DQ6
DQ7

Vss

U20

DQS0_t
DQS0_c

DQS9_t
DQS9_c

DQ
DQ
DQ
DQ
ZQ

DQ8

DQ9
DQ10
DQ11

Vss

U3

DQ
DQ
DQ
DQ
ZQ

DQ12
DQ13
DQ14
DQ15

Vss

U19

DQS1_t
DQS1_c

DQS10_t
DQS10_c

DQ
DQ
DQ
DQ
ZQ

DQ16
DQ17
DQ18
DQ19

Vss

U4

DQ
DQ
DQ
DQ
ZQ

DQ20
DQ21
DQ22
DQ23

Vss

U18

DQS2_t
DQS2_c

DQS11_t
DQS11_c

DQ
DQ
DQ
DQ
ZQ

DQ24
DQ25
DQ26
DQ27

Vss

U5

DQ
DQ
DQ
DQ
ZQ

DQ28
DQ29
DQ30
DQ31

Vss

U17

DQS3_t
DQS3_c

DQS12_t

DQS12_c

DQ
DQ
DQ
DQ
ZQ

CB0
CB1
CB2
CB3

Vss

U6

DQ
DQ
DQ
DQ
ZQ

CB4
CB5
CB6
CB7

Vss

U16

DQS8_t

DQS8_c

DQS17_t

DQS17_c

DQ
DQ
DQ
DQ
ZQ

DQ32
DQ33
DQ34
DQ35

Vss

U8

DQ
DQ
DQ
DQ
ZQ

DQ36
DQ37
DQ38
DQ39

Vss

U15

DQS4_t

DQS4_c

DQS13_t
DQS13_c

DQ
DQ
DQ
DQ
ZQ

DQ40
DQ41
DQ42
DQ43

Vss

U9

DQ
DQ
DQ
DQ
ZQ

DQ44
DQ45
DQ46
DQ47

Vss

U14

DQS5_t
DQS5_c

DQS14_t
DQS14_c

DQ
DQ
DQ
DQ
ZQ

DQ48
DQ49
DQ50
DQ51

Vss

U10

DQ
DQ
DQ
DQ
ZQ

DQ52
DQ53
DQ54
DQ55

Vss

U13

DQS6_t
DQS6_c

DQS15_t
DQS15_c

DQ
DQ
DQ
DQ
ZQ

DQ56
DQ57
DQ58
DQ59

Vss

U11

DQ
DQ
DQ
DQ
ZQ

DQ60
DQ61
DQ62
DQ63

Vss

U12

DQS7_t

DQS7_c

DQS16_t
DQS16_c

A/B-CS0_n

U7

A/B-CS0_n, A/B-BA[1:0]A/B-BG[1:0],

A/B-ACT_n, A/B-A[17, 13:0], A/B-RAS_n/A16,

A/B-CAS_n/A15, A/B-WE_n/A14,

A/B-CKE0, A/B-ODT0

CK[1:0]_t
CK[1:0]_c

Command, control, address, and clock line terminations:

DDR4

SDRAM

VTT

DDR4

SDRAM

VDD

U1

A0

SPD EEPROM/

Temperature

sensor

A1 A2

SA0

SA1

SDA

SCL

EVT

EVENT_n

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

CS_n DQS_t DQS_c

SA2

VREFCA

VSS

DDR4 SDRAM, Register

DDR4 SDRAM, Register

VDD

Control, command and
address termination

VDDSPD

SPD EEPROM/Temp Sensor,
Register

VTT

DDR4 SDRAM, Register

DDR4 SDRAM

VPP

CS0_n
BA[1:0]
BG[1:0]

ACT_n
A[17, 13:0]
RAS_n/A16
CAS_n/A15

WE_n/A14

CKE0

ODT0

PAR_IN

ALERT_CONN_N

A/B-CS0_n: Rank 0
A/B-BA[1:0]: DDR4 SDRAM
A/B-BG[1:0]: DDR4 SDRAM
A/B-ACT_n: DDR4 SDRAM
A/B-A[17,13:0]: DDR4 SDRAM
A/B-RAS_n/A16: DDR4 SDRAM
A/B-CAS_n/A15: DDR4 SDRAM
A/B-WE_n/A14: DDR4 SDRAM
A/B-CKE0: Rank 0
A/B-ODT0: Rank 0
A/B-PAR: DDR4 SDRAM
ALERT_DRAM: DDR4 SDRAM

R

E

G

I

S

T

E

R

&

P

L

L

RESET_N

CK[1:0]_c

DDR4 SDRAM

QRST_N: DDR4 SDRAM

CK[1:0]_t

ZQ

VSS

SA0
SA1
SA2

SCL

SDA

CK0_t
CK0_c

CK1_t

CK1_c

Functional Block Diagram

Figure 2: Functional Block Diagram

CCM005-341111752-10523
asf18c4gx72pz.pdf - Rev. C 4/2020 EN

Note:

1. The ZQ ball on each DDR4 component is connected to an external 240Ω ±1% resistor

32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM

Functional Block Diagram

that is tied to ground. It is used for the calibration of the component’s ODT and output
driver.

7

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2019 Micron Technology, Inc. All rights reserved.

32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM

Functional Block Diagram

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: [phone]

www.micron.com/products/support Sales inquiries: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

CCM005-341111752-10523
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Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2019 Micron Technology, Inc. All rights reserved.

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Authorized Distributor

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