1997 Microchip Technology Inc. DS30272A-page 89
PIC16C71X
Applicable Devices 710 71 711 715
11.0 ELECTRICAL CHARACTERISTICS FOR PIC16C710 AND PIC16C711
Absolute Maximum Ratings †
Ambient temperature under bias.................................................................................................................-55 to +125˚C
Storage temperature.............................................................................................................................. -65˚C to +150˚C
Voltage on any pin with respect to V
SS (except VDD, MCLR, and RA4)..........................................-0.3V to (VDD + 0.3V)
Voltage on V
DD with respect to VSS ........................................................................................................... -0.3 to +7.5V
Voltage on MCLR
with respect to VSS................................................................................................................0 to +14V
Voltage on RA4 with respect to Vss...................................................................................................................0 to +14V
Total power dissipation (Note 1)................................................................................................................................1.0W
Maximum current out of V
SS pin ...........................................................................................................................300 mA
Maximum current into V
DD pin..............................................................................................................................250 mA
Input clamp current, I
IK (VI < 0 or VI > VDD).....................................................................................................................± 20 mA
Output clamp current, I
OK (VO < 0 or VO > VDD).............................................................................................................± 20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA ........................................................................................................................200 mA
Maximum current sourced by PORTA...................................................................................................................200 mA
Maximum current sunk by PORTB........................................................................................................................200 mA
Maximum current sourced by PORTB...................................................................................................................200 mA
Note 1: Power dissipation is calculated as follows: Pdis = V
DD x {IDD - ∑ IOH} + ∑ {(VDD - VOH) x IOH} + ∑(VOl x IOL)
TABLE 11-1: CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS
AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES)
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or an y other conditions abo v e those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
OSC
PIC16C710-04
PIC16C711-04
PIC16C710-10
PIC16C711-10
PIC16C710-20
PIC16C711-20
PIC16LC710-04
PIC16LC711-04
PIC16C710/JW
PIC16C711/JW
RC
VDD: 4.0V to 6.0V
IDD: 5 mA max. at 5.5V
IPD: 21 µA max. at 4V
Freq:4 MHz max.
VDD: 4.5V to 5.5V
IDD: 2.7 mA typ. at 5.5V
IPD: 1.5 µA typ. at 4V
Freq: 4 MHz max.
VDD: 4.5V to 5.5V
IDD: 2.7 mA typ. at 5.5V
IPD: 1.5 µA typ. at 4V
Freq: 4 MHz max.
VDD: 2.5V to 6.0V
IDD: 3.8 mA typ. at 3.0V
IPD: 5.0 µA typ. at 3V
Freq: 4 MHz max.
VDD: 4.0V to 6.0V
IDD: 5 mA max. at 5.5V
IPD: 21 µA max. at 4V
Freq:4 MHz max.
XT
VDD: 4.0V to 6.0V
IDD: 5 mA max. at 5.5V
IPD: 21 µA max. at 4V
Freq: 4 MHz max.
VDD: 4.5V to 5.5V
IDD: 2.7 mA typ. at 5.5V
IPD: 1.5 µA typ. at 4V
Freq: 4 MHz max.
VDD: 4.5V to 5.5V
IDD: 2.7 mA typ. at 5.5V
IPD: 1.5 µA typ. at 4V
Freq: 4 MHz max.
VDD: 2.5V to 6.0V
IDD: 3.8 mA typ. at 3.0V
IPD: 5.0 µA typ. at 3V
Freq: 4 MHz max.
VDD: 4.0V to 6.0V
IDD: 5 mA max. at 5.5V
IPD: 21 µA max. at 4V
Freq: 4 MHz max.
HS
VDD: 4.5V to 5.5V VDD: 4.5V to 5.5V VDD:4.5V to 5.5V
Not recommended for
use in HS mode
VDD: 4.5V to 5.5V
IDD: 13.5 mA typ. at
5.5V
IDD: 30 mA max. at
5.5V
IDD: 30 mA max. at
5.5V
IDD: 30 mA max. at
5.5V
IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V
Freq: 4 MHz max. Freq: 10 MHz max. Freq:20 MHz max. Freq: 10 MHz max.
LP
VDD: 4.0V to 6.0V
IDD: 52.5 µA typ. at
32 kHz, 4.0V
IPD: 0.9 µA typ. at 4.0V
Freq: 200 kHz max.
Not recommended for
use in LP mode
Not recommended for
use in LP mode
VDD: 2.5V to 6.0V
IDD: 48 µA max. at
32 kHz, 3.0V
IPD: 5.0 µA max. at 3.0V
Freq: 200 kHz max.
VDD: 2.5V to 6.0V
IDD: 48 µA max. at
32 kHz, 3.0V
IPD: 5.0 µA max. at
3.0V
Freq: 200 kHz max.