Microchip Technology Inc 93LC66BT-I-P, 93LC66BT-ST, 93LC66BT-SN, 93LC66BT-SM, 93LC66BT-P Datasheet



1997 Microchip Technology Inc.

Preliminary

DS21209A-page 1

M

93LC66A/B

FEATURES

• Single supply with operation down to 2.5V

• Low power CMOS technology

- 1 mA active current (typical)

-1 µ A standby current (maximum)

• 512 x 8 bit organization (93LC66A)

• 256 x 16 bit organization (93LC66B)

• Self-timed ERASE and WRITE cycles
(including auto-erase)

• Automatic ERAL before WRAL

• Power on/off data protection circuitry

• Industry standard 3-wire serial interface

• Device status signal during ERASE/WRITE cycles

• Sequential READ function

• 1,000,000 E/W cycles guaranteed

• Data retention > 200 years

• 8-pin PDIP/SOIC and 8-pin TSSOP packages

• Available for the following temperature ranges:

BLOCK DIAGRAM

DESCRIPTION

The Microchip Technology Inc. 93LC66A/B are 4K-bit,
low voltage serial Electrically Erasable PROMs. The
device memory is configured as x8 (93LC66A) or
x16 bits (93LC66B). Advanced CMOS technology
makes these devices ideal for low power nonvolatile
memory applications. The 93LC66A/B is available in
standard 8-pin DIP, surface mount SOIC, and TSSOP
packages. The 93LC66AX/BX are only offered in a 150­mil SOIC package.

PACKA GE TYPE

- Commercial (C): 0 ° C to +70 ° C

- Industrial (I): -40 ° C to +85 ° C

Vcc
Vss

DI

CS

CLK

DO

MEMORY

ARRAY

ADDRESS
DECODER

ADDRESS
COUNTER

DATA

REGISTER

OUTPUT

BUFFER

MODE

DECODE

CLOCK

GENERATOR

LOGIC

93LC66A/B

CS

CLK

DI

DO

1
2

3

4

8
7

6

5

Vcc
NC

NC

Vss

CS

CLK

DI

DO

V

CC

NC

NC

Vss

93LC66A/B

NU

Vcc

CS

CLK

NC

Vss

DO

DI

93LC66A/BX

93LC66A/B

CS

CLK

DI

DO

1
2
3
4

8
7
6
5

Vcc
NC
NC
Vss

TSSOP

SOICSOIC

1
2

3

4

DIP

8
7

6

5

1
2

3

4

8
7

6

5

4K 2.5V Microwire



Serial EEPROM

Microwire is a registered trademark of Motorola.

93LC66A/B

DS21209A-page 2

Preliminary



1997 Microchip Technology Inc.

1.0 ELECTRICAL
CHARACTERISTICS

1.1 Maxim

um Ratings*

Vcc...................................................................................7.0V

All inputs and outputs w.r.t. Vss ................-0.6V to Vcc +1.0V

Storage temperature.....................................-65 ° C to +150 ° C

Ambient temp. with power applied.................-65 ° C to +125 ° C

Soldering temperature of leads (10 seconds).............+300 ° C

ESD protection on all pins................................................4 kV

*Notice: Stresses above those listed under “Maximum ratings” may

cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri­ods may affect device reliability.

TABLE 1-1 PIN FUNCTION TABLE

Name Function

CS Chip Select

CLK Serial Data Clock

DI Serial Data Input

DO Serial Data Output

V

SS

Ground

NC No Connect

V

CC

Power Supply

TABLE 1-2 DC AND AC ELECTRICAL CHARACTERISTICS

All parameters apply over the specified
operating ranges unless otherwise
noted

Commercial (C): V

CC

= +2.5V to +6.0V Tamb = 0 ° C to +70 ° C

Industrial (I): V

CC

= +2.5V to +6.0V Tamb = -40 ° C to +85 ° C

Parameter Symbol Min. Max. Units Conditions

High level input voltage

V

IH

1 2.0 Vcc +1 V 2.7V ≤ V

CC

≤

5.5V (Note 2)

V

IH

2 0.7 V

CC

Vcc +1 V V

CC

< 2.7V

Low level input voltage

V

IL

1 -0.3 0.8 V V

CC

> 2.7V (Note 2)

V

IL

2 -0.3 0.2 Vcc V V

CC

< 2.7V

Low level output voltage

V

OL

1 — 0.4 V I

OL

= 2.1 µ A; Vcc = 4.5V

V

OL

2 — 0.2 V I

OL

=100 µ A; Vcc = Vcc Min.

High level output voltage

V

OH

1 2.4 — V I

OH

= -400 µ A; Vcc = 4.5V

V

OH

2 V

CC

-0.2 — V I

OH

= -100 µ A; Vcc = Vcc Min.

Input leakage current I

LI

-10 10

µ

A V

IN

= V

SS

to V

CC

Output leakage current I

LO

-10 10

µ

A V

OUT

= V

SS

to V

CC

Pin capacitance
(all inputs/outputs)

C

IN

, C

OUT

— 7 pF

V

IN

/V

OUT

= 0 V (Notes 1 & 2)

Tamb = +25 ° C, F

CLK

= 1 MHz

Operating current

I

CC

read —

1

500

mA

µ

A

F

CLK

= 2 MHz; Vcc = 6.0V

F

CLK

= 1 MHz; Vcc = 3.0V

I

CC

write — 1.5 mA

Standby current I

CCS

— 1

µ

A CS = Vss

Clock frequency F

CLK

—

2
1

MHz
MHz

V

CC

> 4.5V

V

CC

< 4.5V

Clock high time T

CKH

250 — ns

Clock low time T

CKL

250 — ns

Chip select setup time T

CSS

50 — ns Relative to CLK

Chip select hold time T

CSH

0 — ns Relative to CLK

Chip select low time T

CSL

250 — ns

Data input setup time T

DIS

100 — ns Relative to CLK

Data input hold time T

DIH

100 — ns Relative to CLK

Data output delay time T

PD

— 400 ns C

L

= 100 pF

Data output disable time T

CZ

— 100 ns C

L

= 100 pF (Note 2)

Status valid time T

SV

— 500 ns C

L

= 100 pF

Program cycle time

T

WC

— 6 ms ERASE/WRITE mode

T

EC

— 6 ms ERAL mode

T

WL

— 15 ms WRAL mode

Endurance — 1M — cycles 25 ° C, V

CC

= 5.0V, Block Mode (Note 3)

Note 1: This parameter is tested at Tamb = 25 ° C and Fclk = 1 MHz.

2:

This parameter is periodically sampled and not 100% tested.

3:

This application is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total
Endurance Model which may be obtained on Microchip’s BBS or website.

93LC66A/B



1997 Microchip Technology Inc.

Preliminary

DS21209A-page 3

2.0 PIN DESCRIPTION

2.1 Chip Select (CS)

A high level selects the de vice; a low le vel deselects the
device and forces it into standb y mode. Howev er , a pro­gramming cycle which is already in progress will be
completed, regardless of the Chip Select (CS) input
signal. If CS is brought low during a progr am cycle, the
device will go into standby mode as soon as the pro­gramming cycle is completed.

CS must be low for 250 ns minimum (T

CSL

) between
consecutive instructions. If CS is low, the internal con­trol logic is held in a RESET status.

2.2 Serial Cloc

k (CLK)

The Serial Clock (CLK) is used to synchronize the com­munication between a master device and the 93LC66A/
B. Opcode, address , and data bits are clock ed in on the
positive edge of CLK. Data bits are also clocked out on
the positive edge of CLK.

CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (T

CKH

) and

clock low time (T

CKL

). This gives the controlling master

freedom in preparing opcode, address, and data.
CLK is a “Don't Care” if CS is low (device deselected).

If CS is high, but a START condition has not been
detected, any number of clock cycles can be received
by the device without changing its status (i.e., waiting
for a START condition).

CLK cycles are not required during the self-timed
WRITE (i.e., auto ERASE/WRITE) cycle.

After detection of a ST AR T condition the specified num­ber of clock cycles (respectively low to high transitions
of CLK) must be provided. These clock cycles are
required to clock in all required opcode, address, and
data bits before an instruction is executed (Table 2-1
and Table 2-2). CLK and DI then become don't care
inputs waiting for a new START condition to be
detected.

2.3 Data In (DI)

Data In (DI) is used to clock in a START bit, opcode,
address, and data synchronously with the CLK input.

2.4 Data Out (DO)

Data Out (DO) is used in the READ mode to output data
synchronously with the CLK input (T

PD

after the posi-

tive edge of CLK).
This pin also provides READ Y/B

USY status information

during ERASE and WRITE cycles. READY/B

USY sta­tus information is available on the DO pin if CS is
brought high after being low for minimum chip select
low time (T

CSL

) and an ERASE or WRITE operation has

been initiated.
The status signal is not available on DO, if CS is held

low during the entire ERASE or WRITE cycle. In this
case, DO is in the HIGH-Z mode. If status is checked
after the ERASE/WRITE cycle, the data line will be high
to indicate the device is ready.

TABLE 2-1 INSTRUCTION SET FOR 93LC66A

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

ERASE

1 11 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY

) 12

ERAL

1 00 1 0 X X X X X X X — (RDY/BSY

) 12

EWDS

1 00 0 0 X X X X X X X — HIGH-Z 12

EWEN

1 00 1 1 X X X X X X X — HIGH-Z 12

READ

1 10 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 20

WRITE

1 01 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY

) 20

WRAL

1 00 0 1 X X X X X X X D7 - D0 (RDY/BSY

) 20

TABLE 2-2 INSTRUCTION SET FOR 93LC66B

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

ERASE

1 11 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY

) 11

ERAL

1 00 1 0 X X X X X X — (RDY/BSY

) 11

EWDS

1 00 0 0 X X X X X X — HIGH-Z 11

EWEN

1 00 1 1 X X X X X X — HIGH-Z 11

READ

1 10 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0 27

WRITE

1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY) 27

WRAL

1 00 0 1 X X X X X X D15 - D0 (RDY/BSY) 27

93LC66A/B

DS21209A-page 4 Preliminary  1997 Microchip Technology Inc.

3.0 FUNCTIONAL DESCRIPTION

Instructions, addresses, and write data are clocked into
the DI pin on the rising edge of the clock (CLK). The DO
pin is normally held in a HIGH-Z state except when
reading data from the device, or when checking the
READY/B

USY status during a programming operation.

The READY/B

USY status can be verified during an
ERASE/WRITE operation by polling the DO pin; DO
low indicates that programming is still in progress, while
DO high indicates the device is ready. The DO will enter
the HIGH-Z state on the falling edge of the CS.

3.1 START Condition

The START bit is detected by the device if CS and DI
are both high with respect to the positive edge of CLK
for the first time.

Before a START condition is detected, CS , CLK, and DI
may change in any combination (except to that of a
START condition), without resulting in any device oper­ation (ERASE, ERAL, EWDS, EWEN, READ, WRITE,
and WRAL). As soon as CS is high, the device is no
longer in the standby mode.

An instruction following a START condition will only be
executed if the required amount of opcodes,
addresses, and data bits for any particular instruction is
clocked in.

After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become don't care bits until a new START condition is
detected.

3.2 Data In(DI) Data Out (DO)

It is possible to connect the Data In (DI)and Data Out
(DO)pins together. However, with this configuration, if
A0 is a logic-high level, it is possible for a “bus conflict”
to occur during the “dummy zero” that precedes the
READ operation. Under such a condition the voltage
level seen at Data Out is undefined and will depend
upon the relative impedances of Data Out and the sig­nal source driving A0. The higher the current sourcing
capability of A0, the higher the voltage at the Data Out
pin.

3.3 Data Protection

During power-up, all programming modes of operation
are inhibited until V

CC has reached a level greater than

2.2V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
Vcc has fallen below 2.2V at nominal conditions.

The ERASE/WRITE Disable (EWDS) and ERASE/
WRITE Enable (EWEN) commands give additional pro­tection against accidentally programming during nor­mal operation.

After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.

FIGURE 3-1: SYNCHRONOUS DATA TIMING

CS

V

IH

VIL

VIH

VIL

VIH

VIL

VOH
VOL

VOH

VOL

CLK

DI

DO

(READ)

DO

(PROGRAM)

T

CSS

TDIS

TCKH

TCKL

TDIH

TPD

TCSH

TPD

TCZ

STATUS VALID

T

SV

TCZ

Note: AC Test Conditions: VIL = 0.4V, VIH = 2.4V.