Microchip Technology Inc 93C56BTE-SN, 93C56BTE-P, 93C56BE-SN, 93C56BE-P, 93C56ATE-SN Datasheet



1998 Microchip Technology Inc.

Preliminary

DS21206B-page 1

M

93C56A/B

FEATURES

• Single supply 5.0V operation

• Low power CMOS technology

- 1 mA active current (typical)

-1 µ A standby current (maximum)

• 256 x 8 bit organization (93C56A)

• 128 x 16 bit organization (93C56B)

• Self-timed ERASE and WRITE cycles (including
auto-erase)

• Automatic ERAL before WRAL

• Power on/off data protection circuitry

• Industry standard 3-wire serial interface

• Device status signal during ERASE/WRITE
cycles

• Sequential READ function

• 100,000 E/W cycles guaranteed

• Data retention > 200 years

• 8-pin PDIP and SOIC packages

• Available for the following temperature ranges:

DESCRIPTION

The Microchip Technology Inc. 93C56A/B is a 2K-bit,
low-voltage serial Electrically Erasable PROM. The
device memory is configured as 256 x 8 bits (93C56A)
or 128 x 16 bits (93C56B). Advanced CMOS technol­ogy makes this device ideal for low-power, nonvolatile
memory applications. The 93C56A/B is available in
standard 8-pin DIP and surface mount SOIC packages.

This device is only recommeded for 5V automotive
temperature applications. For all commercial and
industrial applications, the 93LC56A/B is recom­mended.

PACKA GE TYPE

BLOCK DIAGRAM

- Automotive (E): -40 ° C to +125 ° C

93C56A/B

CS

CLK

DI

DO

1
2

3

4

8
7

6

5

V

CC

NC

NC

V

SS

CS

CLK

DI

DO

V

CC

NC

NC

V

SS

93C56A/B

SOIC

1
2

3

4

PDIP

8
7

6

5

VCC
VSS

DI

CS

CLK

DO

MEMORY

ARRAY

ADDRESS
DECODER

ADDRESS
COUNTER

DATA

REGISTER

OUTPUT

BUFFER

MEMORY
DECODE

LOGIC

CLOCK

GENERATOR

2K 5.0V Automotive Temperature Microwire

®

Serial EEPROM

Microwire is a registered trademark of National Semiconductor.

93C56A/B

DS21206B-page 2

Preliminary



1998 Microchip Technology Inc.

1.0 ELECTRICAL
CHARACTERISTICS

1.1 Maximum Ratings*

V

CC

...................................................................................7.0V

All inputs and outputs w.r.t.

V

SS

................-0.6V to Vcc +1.0V

Storage temperature.....................................-65 ° C to +150 ° C

Ambient temp. with power applied.................-65 ° C to +125 ° C

Soldering temperature of leads (10 seconds).............+300 ° C

ESD protection on all pins................................................4 kV

*Notice: Stresses above those listed under “Maximum ratings” may

cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri­ods may affect device reliability.

TABLE 1-1: PIN FUNCTION TABLE

Name Function

CS Chip Select

CLK Serial Data Clock

DI Serial Data Input

DO Serial Data Output

V

SS

Ground

NC No Connect

V

CC

Power Supply

TABLE 1-2: DC AND AC ELECTRICAL CHARACTERISTICS

All parameters apply over the
specified operating ranges
unless otherwise noted

Automotive (E)V

CC

= +4.5V to +5.5VTamb = -40 ° C to +125 ° C

Parameter Symbol Min. Max. Units Conditions

High level input voltage V

IH

2.0 V

CC

+1 V (Note 2)

Low level input voltage V

IL

-0.3 0.8 V

Low level output voltage V

OL

— 0.4 V I

OL

= 2.1 mA; V

CC

= 4.5V

High level output voltage V

OH

2.4 — V I

OH

= -400 µ A; V

CC

= 4.5V

Input leakage current I

LI

-10 10

µ

AV

IN

= V

SS

to V

CC

Output leakage current I

LO

-10 10

µ

AV

OUT

= V

SS

to V

CC

Pin capacitance
(all inputs/outputs)

C

IN

, C

OUT

—7pF

V

IN

/V

OUT

= 0 V (Notes 1 & 2)

Tamb = +25 ° C, F

CLK

= 1 MHz

Operating current

I

CC

write — 1.5 mA

I

CC

read — 1 mA

Standby current I

CCS

—1 µ A CS = V

SS

Clock frequency F

CLK

— 2 MHz

Clock high time T

CKH

250 — ns

Clock low time T

CKL

250 — ns

Chip select setup time T

CSS

50 — ns Relative to CLK

Chip select hold time T

CSH

0 — ns Relative to CLK

Chip select low time T

CSL

250 — ns

Data input setup time T

DIS

100 — ns Relative to CLK

Data input hold time T

DIH

100 — ns Relative to CLK

Data output delay time T

PD

— 400 ns C

L

= 100 pF

Data output disable time T

CZ

— 100 ns C

L

= 100 pF (Note 2)

Status valid time T

SV

— 500 ns C

L

= 100 pF

Program cycle time

T

WC

— 2 ms ERASE/WRITE mode

T

EC

— 6 ms ERAL mode

T

WL

— 15 ms WRAL mode

Endurance — 100K — cycles 25 ° C, V

CC

= 5.0V, Block Mode (Note 3)

Note 1: This parameter is tested at Tamb = 25 ° C and F

CLK

= 1 MHz.

2:

This parameter is periodically sampled and not 100% tested.

3:

This application is not tested but guaranteed by characterization. For endurance estimates in a specific
application, please consult the Total Endurance Model which may be obtained on Microchip’s BBS or web­site.



1998 Microchip Technology Inc.

Preliminary

DS21206B-page 4-3

93C56A/B

2.0 PIN DESCRIPTION

2.1 Chip Select (CS)

A high level selects the device. A low level deselects
the device and forces it into standb y mode. However, a
programming cycle which is already in progress will be
completed, regardless of the CS input signal. If CS is
brought low during a program cycle, the device will go
into standby mode as soon as the programming cycle
is completed.

CS must be low for 250 ns minimum (T

CSL

) between
consecutive instructions. If CS is low, the internal con­trol logic is held in a RESET status.

2.2 Serial Clock (CLK)

The Serial Clock is used to synchronize the communi­cation between a master device and the 93C56A/B.
Opcode, address, and data bits are clocked in on the
positive edge of CLK. Data bits are also cloc ked out on
the positive edge of CLK.

CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (T

CKH

) and

clock low time (T

CKL

). This gives the controlling master

freedom in preparing opcode, address, and data.
CLK is a “Don't Care” if CS is low (device deselected).

If CS is high, but the START condition has not been
detected, any number of clock cycles can be received
by the device without changing its status (i.e., waiting
for a START condition).

CLK cycles are not required during the self-timed
WRITE (i.e., auto ERASE/WRITE) cycle.

After detecting a START condition, the specified num­ber of clock cycles (respectively low to high transitions
of CLK) must be provided. These clock cycles are
required to clock in all required opcode, address, and
data bits before an instruction is executed (Table 2-1
and Table 2-2). CLK and DI then become don't care
inputs waiting for a new START condition to be
detected.

2.3 Data In (DI)

Data In is used to clock in a START bit, opcode,
address, and data synchronously with the CLK input.

2.4 Data Out (DO)

Data Out is used in the READ mode to output data syn­chronously with the CLK input (T

PD

after the positive

edge of CLK).
This pin also provides READY/B

USY status informa-

tion during ERASE and WRITE cycles. READY/B

USY
status information is available on the DO pin if CS is
brought high after being low for minimum chip select
low time (T

CSL

) and an ERASE or WRITE operation

has been initiated.

The status signal is not available on
DO, if CS is held low during the entire ERASE or
WRITE cycle. In this case, DO is in the HIGH-Z mode.
If status is checked after the ERASE/WRITE cycle, the
data line will be high to indicate the device is ready.

.

Note: CS must go low between consecutive

instructions.

TABLE 2-1: INSTRUCTION SET FOR 93C56A

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

ERASE

1 11 X A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)12

ERAL

1 00 10XXXXXXX — (RDY/BSY)12

EWDS

1 00 00XXXXXXX — HIGH-Z 12

EWEN

1 00 11XXXXXXX — HIGH-Z 12

READ

1 10 X A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 20

WRITE

1 01 X A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY)20

WRAL

1 00 01XXXXXXXD7 - D0 (RDY/BSY)20

TABLE 2-2: INSTRUCTION SET FOR 93C56B

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

ERASE

1 11 X A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)11

ERAL

1 00 10XXXXXX — (RDY/BSY)11

EWDS

1 00 00XXXXXX — HIGH-Z 11

EWEN

1 00 11XXXXXX — HIGH-Z 11

READ

1 10 X A6 A5 A4 A3 A2 A1 A0 — D15 - D0 27

WRITE

1 01 X A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY)27

WRAL

1 00 01XXXXXXD15 - D0 (RDY/BSY)27

93C56A/B

DS21206B-page 4 Preliminary  1998 Microchip Technology Inc.

3.0 FUNCTIONAL DESCRIPTION

Instructions, addresses, and write data are clocked into
the DI pin on the rising edge of the clock (CLK). The DO
pin is normally held in a HIGH-Z state except when
reading data from the device, or when checking the
READY/B

USY status during a programming operation.

The READY/B

USY status can be verified during an
ERASE/WRITE operation by polling the DO pin; DO
low indicates that programming is still in progress, while
DO high indicates the device is ready . The DO will enter
the HIGH-Z state on the falling edge of the CS.

3.1 START Condition

The START bit is detected by the device if CS and DI
are both high with respect to the positive edge of CLK
for the first time.

Before a START condition is detected, CS , CLK, and DI
may change in any combination (except to that of a
START condition), without resulting in any device oper­ation (READ, WRITE, ERASE, EWEN, EWDS, ERAL,
and WRAL). As soon as CS is high, the device is no
longer in the standby mode.

An instruction following a START condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction is clocked in.

After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become don't care bits until a new START condition is
detected.

3.2 Data IN (DI) and Data Out (DO)

It is possible to connect the Data In (DI) and Data Out
(DO) pins together. However, with this configuration, if
A0 is a logic-high level, it is possible for a “bus conflict”
to occur during the “dummy zero” that precedes the
READ operation. Under such a condition, the voltage
level seen at DO is undefined and will depend upon the
relative impedances of DO and the signal source driv­ing A0. The higher the current sourcing capability of A0,
the higher the voltage at the DO pin.

3.3 Data Protection

During power-up, all programming modes of operation
are inhibited until Vcc has reached a level greater than

3.8V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
Vcc has fallen below 3.8V at nominal conditions.

The ERASE/WRITE Disable (EWDS) and ERASE
WRTE Enable (EWEN) commands give additional pro­tection against accidentally programming during nor­mal operation.

After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction
can be executed.

FIGURE 3-1: SYNCHRONOUS DATA TIMING

CS

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL
VOH

VOL

CLK

DI

DO

(READ)

DO

(PROGRAM)

TCSS

TDIS

TCKH

TCKL

TDIH

TPD

TCSH

TPD

TCZ

STATUS VALID

TSV

TCZ

Note: AC Test Conditions: VIL = 0.4V, VIH = 2.4V.