Microchip Technology Inc 27LV64-30I-P, 27LV64-30I-L, 27LV64-30-SO, 27LV64-30-P, 27LV64-25I-SO Datasheet



27LV64

64K (8K x 8) Low-Voltage CMOS EPROM

FEATURES

• Wide voltage range 3.0V to 5.5V

• High speed performance

- 200 ns access time available at 3.0V

• CMOS Technology for low power consumption

- 8 mA active current at 3.0V

- 20 mA active current at 5.5V

- 100 µ A standby current

• Factory programming available

• Auto-insertion-compatible plastic packages

• Auto ID aids automated programming

• Separate chip enable and output enable controls

• High speed “express” programming algorithm

• Organized 8K x 8: JEDEC standard pinouts

- 28-pin Dual-in-line package

- 32-pin PLCC Package

- 28-pin SOIC package

- Tape and reel

• Available for the following temperature ranges:

- Commercial: 0˚C to +70˚C

- Industrial: -40˚C to +85˚C

DESCRIPTION

The Microchip Technology Inc. 27L V64 is a low-voltage
(3.0 volt) CMOS EPROM designed for battery powered
applications. The device is organized as 8K x 8 (8K­Byte) non-volatile memory product. The 27LV64 con­sumes only 8mA maximum of active current during a

3.0 volt read operation therefore improving battery per­formance. This device is designed for very low voltage
applications where conventional 5.0 volt only EPROMs
can not be used. Accessing individual bytes from an
address transition or from power-up (chip enable pin
going low) is accomplished in less than 200 ns at

3.0V.This device allows system designers the ability to
use low voltage non-volatile memory with today’s low
voltage microprocessors and peripherals in battery
powered applications.

A complete family of packages is offered to provide the
most flexibility in applications. For surface mount appli­cations, PLCC or SOIC packaging is available. Tape
and reel packaging is also available for PLCC or SOIC
packages.

PACKA GE TYPES

DIP/SOIC



• 1

V 

PP

A12

2

A7

3

A6

4

A5

5

A4

6

A3

7

A2

8

A1

9

A0

10

O0

11

O1

12

O2

13

V

14

SS

PLCC

A7

A12

432

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

NC

13

O0

14

15

O1

O2

16

PP

V 

SS

V 

27LV64

NU

1

27LV64

17

NU

Vcc

32

18

O3

28
27
26
25
24
23
22
21
20
19
18
17
16
15

PGM

31

19

O4

V 

CC

PGM
NC
A8
A9
A11
OE
A10
CE
O7
O6
O5
O4
O3

NC

30

29

A8

28

A9

27

A11

26

NC

25

OE

24

A10

23

CE

22

O7

21

O6

20

O5

1996 Microchip Technology Inc. DS11024E-page 1



27LV64

µ

µ

µ

±

1.0 ELECTRICAL CHARACTERISTICS

1.1 Maxim

CC

V

and input voltages w.r.t. V

voltage w.r.t. V

PP

V

um Ratings*

during

SS

SS

.......-0.6V to + 7.25V

TABLE 1-1: PIN FUNCTION TABLE

A0-A12 Address Inputs

programming..........................................-0.6V to +14V

Voltage on A9 w.r.t. V
Output voltage w.r.t. V

......................-0.6V to +13.5V

SS

SS

............... -0.6V to V

CC

+1.0V

Storage temperature ..........................-65˚C to +150˚C

Ambient temp. with power applied .....-65˚C to +125˚C

*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rat­ing only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating con­ditions for extended periods may affect device reliability.

O0 - O7 Data Output

TABLE 1-2: READ OPERATION DC CHARACTERISTICS

CC

V

= 3.0V to 5.5V unless otherwise specified
Commercial: Tamb = 0˚C to +70˚C
Industrial: Tamb = -40˚C to +85˚C

Name Function

CE
OE

PGM

PP

V

V

CC

V

SS

Chip Enable
Output Enable
Program Enable
Programming Voltage

+5V Or +3V Power Supply
Ground

NC No Connection; No Internal Connec-

tions

NU Not Used; No External Connection Is

Allowed

Parameter Part* Status Symbol Min. Max. Units Conditions

Input Voltages all Logic "1"

Logic "0"
Input Leakage all — I
Output Voltages all Logic "1"

Logic "0"
Output Leakage all — I
Input Capacitance all — C

V

IH

V

IL

LI

V

OH

V

OL

LO

IN

2.0

-0.5

-10 10

2.4

V

CC

0.8

+1

V
V

AV

VVI

0.45

-10 10

AV

— 6 pF V

= 0 to V

IN

= -400 µ A

OH

I

= 2.1 mA

OL

OUT

= 0V; Tamb = 25 ° C;

IN

CC

= 0V to V

CC

f = 1 MHz

Output Capacitance all — C

OUT

—12pFV

= 0V; Tamb = 25 ° C;

OUT

f = 1 MHz
V

Power Supply Current,
Active

C

I

TTL input
TTL input

I

CC1

CC2

I

——20 @ 5.0V

8 @ 3.0V
25 @ 5.0V
10 @ 3.0V

mA
mA
mA
mA

= 5.5V; V

CC

f = 1 MHz;

= CE = V

OE
I

= 0 mA;

OUT

V

= -0.1 to 0.8V;

IL

V

IH

= 2.0 to V

= V

PP

IL

;

CC

;

Note 1

CC

Power Supply Current,
Standby

* Parts: C=Commercial Temperature Range; I=Industrial Temperature Range

C

I

all

TTL input
TTL input

CMOS input

S

I

(

) — 1 @ 3.0V

2@ 3.0V

100 @ 3.0V

mA
mA

ACE

= V

CC

0.2V

Note 1: Typical active current increases .5 mA per MHz up to operating frequency for all temperature ranges.

CC

DS11024E-page 2

1996 Microchip Technology Inc.



TABLE 1-3: READ OPERATION AC CHARACTERISTICS

27LV64

AC Testing Waveform: V
Output Load: 1 TTL Load + 100 pF
Input Rise and Fall Times: 10 ns
Ambient Temperature: Commercial: Tamb = 0˚C to +70˚C

Parameter Sym

Address to Output Delay t

to Output Delay t

CE

to Output Delay t

OE

or OE to O/P High

CE

ACC

t

OFF

CE
OE

Impedance

or

Output Hold from Address CE
OE

, whichever goes first

t

OH

FIGURE 1-1: READ WAVEFORMS

IH

Address

V
VIL

VIH

CE

VIL

IH

= 2.4V and V

IL

= 0.45V; V

OH

= 2.0V V

OL

Industrial: Tamb = -40˚C to +85˚C

27LV64-20 27LV64-25 27LV64-30

Units Conditions

Min. Max. Min. Max. Min. Max.

— 200 — 250 — 300 ns CE = OE = V

= V

= V

IL
IL

— 200 — 250 — 300 ns OE
— 100 — 125 — 125 ns CE

0 50 0 50 0 50 ns

0—0—0—ns

Address Valid

tCE(2)

= 0.8V

IL

OE

Outputs
O0 - O7

Notes:

VIH
VIL

V

OH

High Z

tOE(2)

VOL

tACC

(1) tOFF is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to t

CE - tOE after the falling edge of CE without impact on tCE

(3) This parameter is sampled and is not 100% tested.

Valid Output

tOFF(1,3)

tOH

High Z

1996 Microchip Technology Inc. DS11024E-page 3

27LV64

TABLE 1-4: PROGRAMMING DC CHARACTERISTICS

Ambient Temperature: Tamb = 25 ° C ± 5 ° C

CC

V

= 6.5V ± 0.25V, V

Parameter Status Symbol Min. Max. Units Conditions

PP



H

= V

= 13.0V ± 0.25V

µ

Input Voltages Logic”1”

Logic”0”
Input Leakage — I
Output Voltages Logic”1”

Logic”0”
V

Current, program & verify — I

CC

V

PP

Current, program — I
A9 Product Identification — V
Note 1: V

CC

must be applied simultaneously or before V

V
V

V
V

CC2
PP2

IH
IL

LI

OH

OL

2.0

V

CC

+1

V

-0.1

-10 10

2.4

0.8

0.45

V

AV

IN

VVI

OH

I

OL

= 0V to V
= -400 µ A

= 2.1 mA

CC

— 20 mA Note 1
— 25 mA Note 1

H

11.5 12.5 V

PP

and removed simultaneously or after V

PP

.

TABLE 1-5: PROGRAMMING AC CHARACTERISTICS

=2.4V and V

for Program, Program Verify AC Testing Waveform: V

IH

and Program Inhibit Modes Ambient Temperature: Tamb=25 ° C ± 5 ° C

V

CC

= 6.5V ± 0.25V, V

PP

H

= V

= 13.0V ± 0.25V

Parameter Symbol Min. Max. Units Remarks

Address Set-Up Time t
Data Set-Up Time t
Data Hold Time t
Address Hold Time t
Float Delay (2) t

CC Set-Up Time tVCS 2—µs

V
Program Pulse Width (1) t

Set-Up Time tCES 2—µs

CE

Set-Up Time tOES 2—µs

OE

PP Set-Up Time tVPS 2—µs

V
Data Valid from OE

AS

DS 2—µs
DH 2—µs
AH 0—µs
DF 0 130 ns

PW 95 105 µs 100 µs typical

2—µs

tOE 100 ns

Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.
Note 2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no

longer driven (see timing diagram).

=0.45V; V

IL

=2.0V; V

OH

OL

=0.8V

DS11024E-page 4

1996 Microchip Technology Inc.