Microchip Technology Inc 27C64-25I-SO, 27C64-25I-P, 27C64-25I-L, 27C64-25-L, 27C64-20I-SO Datasheet



27C64

64K (8K x 8) CMOS EPROM

FEATURES

• High speed performance

- 120 ns access time available

• CMOS Technology for low power consumption

- 20 mA Active current

- 100 µ A Standby current

• Factory programming available

• Auto-insertion-compatible plastic packages

• Auto ID aids automated programming

• Separate chip enable and output enable controls

• High speed “express” programming algorithm

• Organized 8K x 8: JEDEC standard pinouts

- 28-pin Dual-in-line package

- 32-pin PLCC Package

- 28-pin SOIC package

- Tape and reel

• Available for the following temperature ranges

- Commercial: 0˚C to +70˚C

- Industrial: -40˚C to +85˚C

DESCRIPTION

The Microchip Technology Inc. 27C64 is a CMOS 64K bit (electrically) Programmable Read Only Memory. The device is organized as 8K words by 8 bits (8K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 120 ns. CMOS design and processing enables this part to be used in systems where reduced power consumption and high reliability are requirements.

A complete family of packages is offered to provide the most ﬂexibility in applications. For surface mount applications, PLCC or SOIC packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.

P ACKA GE TYPES

DIP/SOIC



• 1

V 

PP

A12

2

A7

3

A6

4

A5

5

A4

6

A3

7

A2

8

A1

9

A0

10

O0

11

O1

12

O2

13

V

14

SS

PLCC

A7

432

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

NC

13

O0

14

O1

A12

15

O2

16

27C64

PP

V 

NU

Vcc

1

32

27C64

17

18

SS

O3

NU

V 

28 27 26 25 24 23 22 21 20 19 18 17 16 15

PGM

31

19

O4

30

20

NC

O5

V 

CC

PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3

29 28 27 26 25 24 23 22 21

A8 A9 A11 NC OE A10 CE O7 O6

1996 Microchip Technology Inc. DS11107L-page 1



27C64

µ

±

µ

1.0 ELECTRICAL CHARA CTERISTICS

1.1 Maxim

CC

V

and input voltages w.r.t. V

voltage w.r.t. V

PP

V

um Ratings*

during

SS

.......-0.6V to + 7.25V

TABLE 1-1: PIN FUNCTION TABLE

A0-A12 Address Inputs

programming..........................................-0.6V to +14V

Voltage on A9 w.r.t. V Output voltage w.r.t. V

......................-0.6V to +13.5V

SS

............... -0.6V to V

CC

+1.0V

Storage temperature ..........................-65˚C to +150˚C

Ambient temp. with power applied .....-65˚C to +125˚C

*Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

O0 - O7 Data Output

TABLE 1-2: READ OPERATION DC CHARACTERISTICS

CC

V

= +5V ( ± 10%) Commercial: Tamb = 0˚C to +70˚C Industrial: Tamb = -40˚C to +85˚C

Name Function

CE OE

PGM

PP

V

CC

V

SS

Chip Enable Output Enable Program Enable Programming Voltage

+5V Power Supply Ground

NC No Connection; No Internal Connec-

tions

NU Not Used; No External Connection Is

Allowed

Parameter Part* Status Symbol Min Max Units Conditions

Input Voltages all Logic "1"

Logic "0" Input Leakage all — I Output Voltages all Logic "1"

Logic "0" Output Leakage all — I Input Capacitance all — C

V

IH IL

V

LI

V

OH OL

V

LO

IN

2.0

V

+1

CC

-0.5

0.8

-10 10

V V

AV

2.4

0.45VV

-10 10

AV

— 6 pF V

IN

= 0 to V

I

= -400 µ A

OH

I

OL

= 2.1 mA

OUT

= 0V; Tamb = 25 ° C;

IN

CC

= 0V to V

CC

f = 1 MHz

Output Capacitance all — C

OUT

—12pFV

OUT

= 0V; Tamb = 25 ° C;

f = 1 MHz

Power Supply Current, Active

Power Supply Current, Standby

PP

I

Read Current

PP

V

Read Voltage

* Parts: C=Commercial Temperature Range; I =Industrial Temperature Range.

C

I

C

I

all all

all

TTL input TTL input

CMOS input

Read Mode Read Mode

CC1

I

CC2

I

(

CC

S

— —

PP

I

PP

V

— —

)

— — —

CC

V

-0.7

2025mAmAV

2

mA

3

mA

100 100

CC

V

CC

f = 1 MHz; OE I

OUT

V

= 2.0 to V

IH

ACE AVV

= V

PP

= 5.5V

= 5.5V; V

= 0 mA; V

CC

0.2V

PP

CC

= V

= CE = V

= -0.1 to 0.8V;

IL

; Note 1

CC

Note 1: Typical active current increases .5 mA per MHz up to operating frequency for all temperature ranges.

;

IL

;

DS11107L-page 2

1996 Microchip Technology Inc.

TABLE 1-3: READ OPERATION AC CHARACTERISTICS



27C64

AC Testing Waveform: V Output Load: 1 TTL Load + 100 pF Input Rise and Fall Times: 10 ns Ambient Temperature: Commercial: Tamb = 0˚C to +70˚C

27C64-12 27C64-15 27C64-17 27C64-20 27C64-25

Parameter Sym

Min Max Min Max Min Max Min Max Min Max

Address to Output Delay t

to Output Delay t

CE

to Output Delay t

OE

or OE to O/P High

CE

ACC

— 120 — 150 — 170 — 200 — 250 ns CE = OE = V

CE

— 120 — 150 — 170 — 200 — 250 ns OE

OE

—65—70—70—75—100nsCE

t

OFF

050050050055060ns

Impedance Output Hold from

OH

t

0—0—0—0—0—ns Address CE or OE, whichever occurs ﬁrst

FIGURE 1-1: READ WAVEFORMS

V

IH

Address

VIL

IH

= 2.4V and V

IL

= 0.45V; V

OH

= 2.0V V

OL

= 0.8V

Industrial: Tamb = -40˚C to +85˚C

Units Conditions

Address Valid

= V

IL IL IL

VIH

CE

VIL

tCE(2)

VIH

OE

Outputs O0 - O7

VIL

V

VOL

OH

High Z

tOE(2)

tACC

Note 1: tOFF is speciﬁed for OE or CE, whichever occurs ﬁrst.

2: OE

may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE.

3: This parameter is sampled and is not 100% tested.

Valid Output

tOFF(1,3)

tOH

High Z

1996 Microchip Technology Inc. DS11107L-page 3

27C64

TABLE 1-4: PROGRAMMING DC CHARACTERISTICS

Ambient Temperature: Tamb = 25 ° C ± 5 ° C

CC

V

= 6.5V ± 0.25V, V

Parameter Status Symbol Min Max. Units Conditions

PP

H

= V

= 13.0V ± 0.25V



µ

Input Voltages Logic”1”

Logic”0” Input Leakage — I Output Voltages Logic”1”

Logic”0” V

Current, program & verify — I

CC

V

PP

Current, program — I A9 Product Identiﬁcation — V Note 1: V

CC

must be applied simultaneously or before V

V V

CC2 PP2

IH

LI

OH

OL

2.0

V

CC

+1

IL

-0.1

0.8

-10 10

2.4 ——0.45

V V

AV

IN

VVI

OH

I

OL

= 0V to V = -400 µ A

= 2.1 mA

CC

— 20 mA Note 1 — 25 mA Note 1

H

11.5 12.5 V

PP

and removed simultaneously or after V

PP

.

TABLE 1-5: PROGRAMMING AC CHARACTERISTICS

=2.4V and V

for Program, Program Verify AC Testing Waveform: V

IH

and Program Inhibit Modes Ambient Temperature: Tamb=25 ° C

V

CC= 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V

Parameter Symbol Min Max Units Remarks

Address Set-Up Time t Data Set-Up Time t Data Hold Time t Address Hold Time t Float Delay (2) t

CC Set-Up Time tVCS 2—µs

V Program Pulse Width (1) t

Set-Up Time tCES 2—µs

CE

Set-Up Time tOES 2—µs

OE

PP Set-Up Time tVPS 2—µs

V Data Valid from OE

AS 2—µs

DS 2—µs DH 2—µs AH 0—µs DF 0 130 ns

PW 95 105 µs 100 µs typical

tOE — 100 ns

Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.

2: This parameter is only sampled and not 100% tested. Output ﬂoat is deﬁned as the point where data is no

longer driven (see timing diagram).

±5°C

=0.45V; V

IL

=2.0V; V

OH

OL

=0.8V

DS11107L-page 4

1996 Microchip Technology Inc.

Microchip Technology Inc 27C64-25I-SO, 27C64-25I-P, 27C64-25I-L, 27C64-25-L, 27C64-20I-SO Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES

DESCRIPTION

P ACKA GE TYPES

1.0 ELECTRICAL CHARA CTERISTICS