Microchip Technology Inc 27C128-25I-SO, 27C128-25I-P, 27C128-17-P, 27C128-17-L, 27C128-15I-SO Datasheet

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27C128
128K (16K x 8) CMOS EPROM
• High speed performance
- 120 ns access time available
• CMOS Technology for low power consumption
- 20 mA Active current
- 100 µ A Standby current
• Factory programming available
• Auto-insertion-compatible plastic packages
• Auto ID aids automated programming
• Separate chip enable and output enable controls
• High speed “express” programming algorithm
• Organized 16K x 8: JEDEC standard pinouts
- 28-pin Dual-in-line package
- 32-pin PLCC Package
- 28-pin SOIC package
- Tape and reel
• Available for the following temperature ranges:
- Commercial: 0˚C to +70˚C
- Industrial: -40˚C to +85˚C
- Automotive: -40˚C to +125˚C

DESCRIPTION

The Microchip Technology Inc. 27C128 is a CMOS 128K bit (electrically) Programmable Read Only Mem­ory. The device is organized as 16K words by 8 bits (16K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 120 ns. CMOS design and processing enables this part to be used in systems where reduced power consumption and high reliability are requirements.A complete family of pack­ages is offered to provide the most flexibility in applica­tions. For surface mount applications, PLCC, SOIC, or TSOP packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages. UV eras­able versions are also available.
A complete family of packages is offered to provide the most flexibility in applications. For surface mount appli­cations, PLCC or SOIC packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.

PACKAGE TYPES

DIP/SOIC
• 1
V
PP
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
O0
11
O1
12
O2
13
V
14
SS
PLCC
A7
A12
432
5
A6
6
A5
7
A4
8
A3
9
A2
10
A1
11
A0
12
NC
13
O0
14151617181920
O1
O2
28 27 26 25 24
27C128
23 22 21 20 19 18 17 16 15
PP
V NUVcc
1
323130
27C128
SS
O3O4O5
NU
V
PGM
A13
V
CC
PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3
29 28 27 26 25 24 23 22 21
A8 A9 A11 NC OE A10 CE O7 O6
1996 Microchip Technology Inc. DS11003K-page 1
27C128
µ
µ
µ
±
µ

1.0 ELECTRICAL CHARA CTERISTICS

1.1 Maxim
CC
V
and input voltages w.r.t. V
voltage w.r.t. V
PP
V
um Ratings*
during
SS
SS
........-0.6V to +7.25V
TABLE 1-1: PIN FUNCTION TABLE
A0-A13 Address Inputs
programming..........................................-0.6V to +14V
Voltage on A9 w.r.t. V Output voltage w.r.t. V
......................-0.6V to +13.5V
SS
SS
............... -0.6V to V
CC
+1.0V
Storage temperature ..........................-65˚C to +150˚C
Ambient temp. with power applied .....-65˚C to +125˚C
*Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rat­ing only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating con­ditions for extended periods may affect device reliability.
O0 - O7 Data Output
TABLE 1-2: READ OPERATION DC CHARACTERISTICS
CC
V
= +5V ( ± 10%) Commercial: Tamb = 0˚C to +70˚C Industrial: Tamb = -40˚C to +85˚C Extended (Automotive): Tamb = -40 ° C to +125 ° C
Name Function
CE OE
PGM
PP
V
V
CC
V
SS
Chip Enable Output Enable Program Enable Programming Voltage
+5V Power Supply Ground
NC No Connection; No Internal Connec-
tions
NU Not Used; No External Connection Is
Allowed
Parameter Part* Status Symbol Min. Max. Units Conditions
Input Voltages all Logic "1"
Logic "0" Input Leakage all I Output Voltages all Logic "1"
Logic "0" Output Leakage all I Input Capacitance all C
V
IH IL
V
LI
V
OH OL
V
LO
IN
2.0
V
+1
CC
-0.5
0.8
-10 10
V V
AV
2.4
0.45VV
-10 10
AV
6 pF V
IN
= 0 to V
I
= -400 µ A
OH
I
OL
= 2.1 mA
OUT
= 0V; Tamb = 25 ° C;
IN
CC
= 0V to V
CC
f = 1 MHz
Output Capacitance all C
OUT
—12pFV
OUT
= 0V; Tamb = 25 ° C;
f = 1 MHz
Power Supply Current, Active
C
I,E
TTL input TTL input
CC1
I
CC2
I
— —
2025mAmAV
CC
= 5.5V; V f = 1 MHz; OE
= CE = V
I
= 0 mA;
OUT
V
IL
= -0.1 to 0.8V;
IH
V
= 2.0 to V
IL
PP
CC
;
= V
;
CC
Note 1
CC
Power Supply Current, Standby
I
Read Current
PP
V
Read Voltage
PP
* Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges
C
I, E
all all
all
TTL input TTL input
CMOS input
Read Mode Read Mode
S
I
(
)—
I
PP
V
PP
— —
V
CC
-0.7
2 3
100 100
V
CC
mA mA
ACE AVV
= V
= 5.5V
PP
CC
0.2V
Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.
DS11003K-page 2
1996 Microchip Technology Inc.
TABLE 1-3: READ OPERATION AC CHARACTERISTICS
27C128
AC Testing Waveform: V Output Load: 1 TTL Load + 100 pF Input Rise and Fall Times: 10 ns Ambient Temperature: Commercial: Tamb = 0˚C to +70˚C
27C128-12 27C128-15 27C128-17 27C128-20 27C128-25
Parameter Sym
Min Max Min Max Min Max Min Max Min Max
Address to Output Delay t CE
to Output Delay t
OE to Output Delay t
or OE to O/P High
CE
120 150 170 200 250 ns CE
ACC
120 150 170 200 250 ns OE
CE OE
65 70 70 75 100 ns CE=V
t
OFF
050050050055060ns
Impedance Output Hold from
Address CE
or OE,
OH
0—0—0—0—0—ns
t
whichever occurs first
FIGURE 1-1: READ WAVEFORMS
IH
Address
V VIL
IH
= 2.4V and V
IL
= 0.45V; V
OH
= 2.0V V
OL
= 0.8V
Industrial: Tamb = -40˚C to +85˚C Extended (Automotive): Tamb = -40 ° C to +125 ° C
Units Conditions
Address Valid
=OE=V =V
IL IL
IL
CE
OE
Outputs O0 - O7
Notes:
VIH VIL
tCE(2)
VIH VIL
OH
V
High Z
VOL
tACC
(1) tOFF is specified for OE or CE, whichever occurs first (2) OE may be delayed up to t
CE - tOE after the falling edge of CE without impact on tCE
(3) This parameter is sampled and is not 100% tested.
tOE(2)
Valid Output
tOFF(1,3)
tOH
High Z
1996 Microchip Technology Inc. DS11003K-page 3
27C128
TABLE 1-4: PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25 ° C ± 5 ° C
CC
V
= 6.5V ± 0.25V, V
Parameter Status Symbol Min Max. Units Conditions
PP
= 13.0V ± 0.25V
µ
Input Voltages Logic”1”
Logic”0” Input Leakage I Output Voltages Logic”1”
Logic”0” V
Current, program & verify I
CC
V
PP
Current, program I A9 Product Identification V Note 1: V
CC
must be applied simultaneously or before V
V
V
V V
CC2 PP2
IH
LI
OH
OL
2.0
V
CC
+1
V
IL
-0.1
-10 10
2.4
0.8
0.45
V
AV
IN
VVI
OH
I
OL
= 0V to V = -400 µ A
= 2.1 mA
CC
20 mA Note 1 — 25 mA Note 1
H
11.5 12.5 V
PP
and removed simultaneously or after V
PP
TABLE 1-5: PROGRAMMING AC CHARACTERISTICS
for Program, Program Verify AC Testing Waveform: V and Program Inhibit Modes Ambient Temperature: Tamb=25°C± 5°C
V
CC= 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V
Parameter Symbol Min Max Units Remarks
Address Set-Up Time t Data Set-Up Time t Data Hold Time t Address Hold Time t Float Delay (2) t
CC Set-Up Time tVCS 2—µs
V Program Pulse Width (1) t
Set-Up Time tCES 2—µs
CE
Set-Up Time tOES 2—µs
OE
PP Set-Up Time tVPS 2—µs
V Data Valid from OE Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.
2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no
longer driven (see timing diagram).
=2.4V and V
IH
AS 2—µs
DS 2—µs DH 2—µs AH 0—µs DF 0 130 ns
PW 95 105 µs 100 µs typical
=0.45V; V
IL
=2.0V; V
OH
OL=0.8V
tOE 100 ns
DS11003K-page 4
1996 Microchip Technology Inc.
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