HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER
TC7660H
FEATURES
■ Pin Compatible with 7660, High Frequency
Performance DC-to-DC Converter
■ Low Cost, Two Low Value External Capacitors
Required ........................................................ (1.0µF)
■ Converts +5V Logic Supply to ±5V System
■ Wide Input Voltage Range .................... 1.5V to 10V
■ Voltage Conversion........................................99.7%
■ Power Efficiency................................................85%
■ Available in 8-Pin SOIC and 8-Pin PDIP Packages
PIN CONFIGURATION (DIP and SOIC)
NC
CAP
ND
CAP
CAP
GND
CAP
NC
1
+
2
TC7660HCPA
3
4
1
2
3
4
TC7660HEPA
TC7660HCOA
TC7660HEOA
–
+
–
+
8
V
OSC
7
LOW
6
VOLTAGE (LV)
V
5
OUT
+
V
8
OSC
7
LOW
6
VOLTAGE (LV)
5
V
OUT
GENERAL DESCRIPTION
The TC7660H is a pin-compatible, high frequency upgrade to the Industry standard TC7660 charge pump voltage converter. It converts a +1.5V to +10V input to a
corresponding – 1.5V to – 10V output using only two lowcost capacitors, eliminating inductors and their associated
cost, size and EMI.
The TC7660H operates at a frequency of 120kHz
(versus 10kHz for the TC7660), allowing the use of 1.0µF
external capacitors. Oscillator frequency can be reduced
(for lower supply current applications) by connecting an
external capacitor from OSC to ground.
The TC7660H is available in 8-pin DIP and small
outline (SOIC) packages in commercial and extended
temperature ranges.
ORDERING INFORMATION
Temperature
Part No. Package Range
TC7660HCOA 8-Pin SOIC 0°C to +70°C
TC7660HCPA 8-Pin Plastic DIP 0°C to +70°C
TC7660HEOA 8-Pin SOIC – 40°C to +85°C
TC7660HEPA 8-Pin Plastic DIP – 40°C to +85°C
TC7660EV Evaluation Kit for
Charge Pump Family
NC = NO INTERNAL CONNECTION
FUNCTIONAL BLOCK DIAGRAM
OSC
LV
© 2001 Microchip Technology Inc. DS21466A
7
OSCILLATOR
6
TC7660H
RC
INTERNAL
VOLTAGE
REGULATOR
÷ 2
VOLTAGE–
LEVEL
TRANSLATOR
V+CAP
82
3
GND
+
LOGIC
NETWORK
4
5
CAP
V
OUT
–
TC7660H-2 10/1/96
TC7660H
HIGH FREQUENCY 7660 DC-TO-DC
VOLTAGE CONVERTER
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature Range
C Suffix ..................................................0°C to +70°C
Supply Voltage ...................................................... +10.5V
LV and OSC Inputs
Voltage (Note 1) ........................ – 0.3V to (V+ + 0.3V)
E Suffix ............................................ – 40°C to +85°C
Storage Temperature Range ...............– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
for V+ < 5.5V
(V+ – 5.5V) to (V+ + 0.3V)
for V+ > 5.5V
Current Into LV (Note 1)..................... 20µA for V+ > 3.5V
Output Short Duration (V
≤ 5.5V) .........Continuous
SUPPLY
Power Dissipation (TA ≤ 70°C) (Note 2)
SOIC...............................................................470mW
Plastic DIP ......................................................730mW
ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with V
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
+
= 5V, CI = C2 = 1µF, C
OSC
= 0,
Test Circuit (Figure 1), unless otherwise indicated.
Symbol Parameter Test Conditions Min Typ Max Unit
+
I
+
V
H
+
V
L
R
OUT
F
OSC
P
EFF
V
EFF
NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no
Supply Current RL = ∞ — 0.46 1.0 mA
Supply Voltage Range, High Min ≤ TA ≤ Max, 3 — 10 V
RL = 5kΩ, LV Open
Supply Voltage Range, Low Min ≤ TA ≤ Max, 1.5 — 3.5 V
RL = 5kΩ, LV to GND
Output Source Resistance I
= 20mA, TA = 25°C — 55 80 Ω
OUT
I
= 20mA, 0°C ≤ TA ≤ +70°C——95Ω
OUT
(C Device)
I
= 20mA, – 40°C ≤ TA ≤ +85°C — — 110 Ω
OUT
(E Device)
+
V
= 2V, I
= 3mA, LV to GND — 150 250 Ω
OUT
0°C ≤ TA ≤ +70°C
Oscillator Frequency — 120 — kHz
Power Efficiency I
= 10mA, Min ≤ TA ≤ Max 81 85 — %
OUT
Voltage Efficiency RL = ∞ 99 99.7 — %
inputs from sources operating from external supplies be applied prior to "power up" of the TC7660H.
2. Derate linearly above 50°C by 5.5mW/°C.
TC7660H-2 10/1/96
2
© 2001 Microchip Technology Inc. DS21466A
HIGH FREQUENCY 7660 DC-TO-DC
VOLTAGE CONVERTER
I
S
+
V
(+5V)
2
R
L
C
1.0 µF
1
2
+
1
TC7660H
3
4
Figure 1. TC7660H Test Circuit
8
7
6
5
C
1.0 µF
+
Detailed Description
The TC7660H contains all the necessary circuitry to
implement a voltage inverter, with the exception of two
external capacitors, which may be inexpensive 1.0µF
non-polarized capacitors. Operation is best understood by
considering Figure 2, which shows an idealized voltage
inverter. Capacitor C1 is charged to a voltage, V+, for the half
cycle when switches S1 and S3 are closed. (Note: Switches
S2 and S4 are open during this half cycle.) During the second
half cycle of operation, switches S2 and S4 are closed, with
S1 and S3 open, thereby shifting capacitor C1 negatively by
V+ volts. Charge is then transferred from C1 to C2, such that
the voltage on C2 is exactly V+, assuming ideal switches and
no load on C2.
TC7660H
To improve low-voltage operation, the LV pin should be
connected to GND. For supply voltages greater than 3.5V,
the LV terminal must be left open to ensure latch-up-
proof operation and prevent device damage.
Theoretical Power Efficiency Considerations
In theory, a capacitative charge pump can approach
100% efficiency if certain conditions are met:
(1) The drive circuitry consumes minimal power.
(2) The output switches have extremely low ON
resistance and virtually no offset.
(3) The impedances of the pump and reservoir
capacitors are negligible at the pump frequency.
The TC7660H approaches these conditions for negative voltage multiplication if large values of C1 and C2 are
used. Energy is lost only in the transfer of charge
between capacitors if a change in voltage occurs. The
energy lost is defined by:
2
E = 1/2 C1 (V
1
V1 and V2 are the voltages on C1 during the pump and
transfer cycles. If the impedances of C1 and C2 are relatively
high at the pump frequency (refer to Figure 1), compared to
the value of RL, there will be a substantial difference in
voltages V1 and V2. Therefore, it is not only desirable to
make C2 as large as possible to eliminate output voltage
ripple, but also to employ a correspondingly large value for
C1 in order to achieve maximum efficiency of operation.
Do's and Don'ts
• Do not exceed maximum supply voltages.
– V
2
)
2
S
+
V
GND
Figure 2. Idealized Charge Pump Inverter
© 2001 Microchip Technology Inc. DS21466A
1
S
3
• Do not connect LV terminal to GND for supply voltages
S
2
greater than 3.5V.
• Do not short circuit the output to V+ supply for voltages
above 5.5V for extended periods; however, transient
conditions including start-up are okay.
C
S
2
4
V
OUT
= – V
IN
• When using polarized capacitors in the inverting mode,
the + terminal of C1 must be connected to pin 2 of the
TC7660H and the + terminal of C2 must be connected
to GND Pin 3.
3
TC7660H-2 10/1/96