Microchip Technology TC4626COE, TC4627COE, TC4626MJA, TC4626EPA, TC4626EOE Datasheet

TC4626/TC4627

Power CMOS Drivers With Voltage Tripler

Features

• Power Driver WithOn Board Voltage Booster

•LowI

DD

–<4mA

• Small Package – 8-Pin PDIP

• Under-Voltage Circuitry

• Fast Rise-Fall Time – <40nsec @1000pF

• Below-Rail Input Protection

Applications

• Raises 5V to drive higher – Vgs (ON) MOSFETs

• Eliminates one system power supply

Device Selection Table

Part

Number

TC4626COE 16-Pin SOIC (Wide) -55°C to +125°C

TC4626CPA 8-PinPDIP -40°C to +85°C

TC4626EOE 16-Pin SOIC (Wide) -40°C to +85°C

TC4626EPA 8-Pin PDIP 0°C to +70°C
TC4626MJA 8-Pin CERDIP 0°C to +70°C

TC4627COE 16-Pin SOIC (Wide) -55°C to +125°C

TC4627CPA 8-PinPDIP -40°C to +85°C

TC4627EOE 16-Pin SOIC (Wide) -40°C to +85°C

TC4627EPA 8-Pin PDIP 0°C to +70°C
TC4627MJA 8-Pin CERDIP 0°C to +70°C

Package Temp. Range

Package Type

8-Pin PDIP/CERDIP

–

C1

C1

GND

1

+

2

TC4626

C2

3

TC4627

4

V

8

DD

7

IN

6

V

BOOST

5

OUT

16-Pin SOIC (Wide)

C1

NC

C1

NC

C2

NC

NC

GND

–

1

2

+

3

4

TC4626

5

TC4627

6

7

8

V

16

DD

NC

15

14

NC

IN

13

12

NC

V

11

BOOST

NC

10

OUT

9

General Description

The TC4626/TC4627 are single CMOS high speed
drivers with an on-board voltage boost circuit. These
partswork with an input supply voltagefrom4to6volts.
The internal voltage booster will produce a V
potential up to 12 volts above VIN.ThisV
regulated, so i ts voltage is dependent on the input V
voltage and output drive loading requirements. An
internalundervoltage lockoutcircuitkeepsthe outputin
a low state whenV
is enabled when V

dropsbelow 7.8 volts. Output

BOOST

is above 11.3 volts.

BOOST

BOOST

BOOST

is not

DD

Functional Block Diagram

EXT

C

1

+

EXT

C

2

NOTE: Pin numbers correspond to 8-pin package.



2002 Microchip TechnologyInc. DS21426B-page 1

C1-

C2

V

GND

DD

In

1

3

V = 2 x V

8

7

4

Voltage
Booster

DD

Clock

2

C1+

+

V

BOOST

Noninverting

TC4627

Inverting
TC4626

(Unregulated 3 x VDD)

UV LOCK

6

EXT

+

C

3

5

Output

TC4626/TC4627

1.0 ELECTRICAL
CHARACTERISTICS

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the

Absolute Maximum Ratings*

Supply Voltage......................................................6.2V

operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affectdevice reliability.

Input Voltage, Any Terminal

.....................................V

Package Power Dissipation (T

+0.3VtoGND–0.3V

S

≤ 70°C)

A

PDIP.........................................................730mW

CERDIP....................................................800mW

SOIC . .......................................................760mW

Derating Factor PDIP.......5.6 mW/°C Above 36°C

CERDIP................................................6.0mW/°C

Operating Temperature Range (Ambient)

C Version.........................................0°C to +70°C

E Version......................................-40°C to +85°C

M Version ...................................-55°C to +125°C

StorageTemperature Range..............-65°C to +150°C

TC4626/TC4627 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA=+25°C,VDD =5V,C1=C2=C310µF unless otherwise noted.

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

R

O

I

PK

Switching Time

t

R

t

F

t

D1

t

D2

F

MAX

Voltage Booster

R

3

R

2

F

OSC

V

OSC

UV @V

BOOST

V

START@VBOOST

V

BOOST

Logic1, High Input Voltage 2.4 — — V
Logic0, Low Input Voltage — — 0.8 V
Input Current -1 — 1 µA0V ≤ VIN ≤ V

High OutputVoltage V

–0.025 — — V

BOOST

Low Output Voltage — — 0.025 V
Output Resistance, High — 10 15 Ω I
Output Resistance, Low — 8 10 Ω I

=10mA,VDD=5V

OUT

=10mA,VDD=5V

OUT

Peak Output Current — 1.5 — A

RiseTime — 33 40 nsec Figure3-1,Figure3-2
FallTime — 27 35 nsec Figure 3-1, Figure3-2
Delay Time — 35 45 nsec Figure 3-1, Figure 3-2
Delay Time — 45 55 nsec Figure 3-1, Figure 3-2
MaximumSwitching Frequency 1.0 — — MHz VDD=5V,V

Figure 3-1

Voltage Tripler Output

—300400Ω IL=10mA,VDD=5V

Source Resistance
Voltage DoublerOutput

—120200Ω

Source Resistance
Oscillator Frequency 12 — 28 kHz
Oscillator Amplitude Measured

at C1-

4.5 — 10 V R

LOAD

=10kΩ

Undervoltage Threshold 7.0 7.8 8.5 V
Start Up Voltage 10.5 11.3 12 V
@VDD= 5V 14.6 — — V No Load

DRIVE

BOOST

>8.5V,

DS21426B-page 2



2002 Microchip TechnologyInc.

TC4626/TC4627

TC4626/TC4627 ELECTRICAL SPECIFICATIONS (CONTINUED)

Symbol Parameter Min Typ Max Units Test Conditions

PowerSupply

I

DD

V

DD

Electrical Characteristics: Over operating temperature range, V

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

R

O

I

PK

Switching Time

t

R

t

F

t

D1

t

D2

F

MAX

Voltage Booster

R

3

R

2

F

OSC

V

OSC

UV @V

BOOST

V

START@VBOOST

V

BOOST

PowerSupply

I

DD

V

DD

Power Supply Current — — 2.5 mA VIN= LOW or HIGH
Supply Voltage 4.0 — 6.0 V

=5V,C1=C2=C310µF unless otherwise noted.

DD

Logic 1, High Input Voltage 2.4 — — V
Logic 0, Low Input Voltage — — 0.8 V
InputCurrent -10 — 1 µA0V ≤ VIN ≤ V

High Output Voltage V

–0.025 — — V

DRIVE

BOOST

Low Output Voltage — — 0.025 V
Output Resistance, High —

151520

25

Output Resistance, Low —

101013

15

Ω I

OUT

C&EVersion(T
M Version (T

Ω I

OUT

C&EVersion(T
M Version (T

=10mA,VDD=5V

=10mA,VDD=5V

Peak OutputCurrent — 1.5 — A

Rise Time — — 55 nsec Figure 3-1, Figure 3-2
Fall Time — — 50 nsec Figure 3-1, Figure 3-2
DelayTime — — 60 nsec Figure 3-1, Figure 3-2
DelayTime — — 70 nsec Figure 3-1, Figure 3-2
Maximum Switching Frequency 750 — — kHz VDD=5V,V

Figure3-1

Voltage Boost Output

— 400 500 Ω IL=10mA,VDD=5V

BOOST

SourceResistance
Voltage Doubler Output

— 170 300 Ω

SourceResistance
Oscillator Frequency 5 — 50 kHz
Oscillator Amplitude

Measured at C1-

4.5 — 10 V R

LOAD

=10kΩ

UndervoltageThreshold 7.0 7.8 8.5 V
Start Up Voltage 10.5 11.3 12 V
@VDD= 5V 14.6 — — V N o Load

Power Supply Current — — 4 mA VIN= LOW or HIGH
Supply Voltage 4.0 — 6.0 V

=70°Cor85°C)

A

=125°C)

A

=70°Cor85°C)

A

=125°C)

A

>8.5V,



2002 Microchip TechnologyInc. DS21426B-page 3

TC4626/TC4627

2.0 PIN DESCRIPTIONS

ThedescriptionsofthepinsarelistedinTable2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(8-Pin PDIP,

CERDIP)

1C1­2C1+
3C2
4 GND Ground.
5OUT
6V
7IN
8V

Pin No.

(16-Pin SOIC

Wide)

1C1­2 NC No connect.
3C1+
4 NC No connect.
5C2
6 NC No connect.
7 NC No connect.
8 GND Ground.

9OUT
10 NC No connect.
11 V
12 NC No connect.
13 IN
14 NC No connect.
15 NC No connect.
16 V

Symbol Description

BOOST

DD

Symbol Description

BOOST

DD

DS21426B-page 4



2002 Microchip TechnologyInc.

3.0 APPLICATIONS INFORMATION

t

TC4626/TC4627

FIGURE 3-1: INVERTING DRIVE R

SWITCHING TIME

V

BOOST

3

5

0.1µF Ceramic

Output

CL = 1000pF

V

DD

90%

t

D2

t

R

10%

= 5V

+5V

Input

0V

V

BOOST

Output

0V

Input: 100kHz,

square wave,

= t

RISE

C
10µF

C
10µF

FALL

Input

1

2

C
10µF

6

7

2

C1+

C1-

1

TC4626

38

C

2

4

10%

t

D1

t

F

90%

10%

≤ 10nsec

90%

FIGURE 3-2: NONINVERTING DRIVER

SWITCHING TIME

V

BOOST

5

0.1µF Ceramic

Output

CL = 1000pF

= 5V

V

DD

90%

90%

t

D2

10%

+5V

Input

0V

V

BOOST

Output

0V

Input: 100kHz,

square wave,

= t

t

RISE

C
10µF

C
10µF

FALL

1

2

C

3

10µF

6

7

Input

2

C1+

C1-

1

TC4627

38

C

2

4

10%

90%

t

D1

≤ 10nsec

10%

t

R

t

F



2002 Microchip TechnologyInc. DS21426B-page 5