Microchip Technology TC4425MJA, TC4425EPA, TC4425EOE, TC4425CPA, TC4425COE Datasheet

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3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423 TC4424 TC4425
FEATURES
Wide Operating Range ..........................4.5V to 18V
High Capacitive Load
Drive Capability .......................... 1800pF in 25nsec
Short Delay Times ............................. <40nsec Typ.
Matched Rise/Fall Times
Low Supply Current
— With Logic "1" Input ................................. 3.5mA
— With Logic "0" Input ................................. 350µA
Low Output Impedance ............................ 3.5 Typ.
Latch-Up Protected ..Will Withstand 1.5A Reverse
Current
Logic Input Will Withstand Negative Swing Up
to 5V
ESD Protected.....................................................4kV
Pinouts Same as TC1426/27/28; TC4426/27/28
ORDERING INFORMATION
Temperature
Part No. Package Range
TC4423COE 16-Pin SOIC (Wide) 0°C to +70°C TC4423CPA 8-Pin Plastic DIP 0°C to +70°C TC4423EOE 16-Pin SOIC (Wide) – 40°C to +85°C TC4423EPA 8-Pin Plastic DIP – 40°C to +85°C TC4423MJA 8-Pin CerDIP – 55°C to +125°C
TC4424COE 16-Pin SOIC (Wide) 0°C to +70°C TC4424CPA 8-Pin Plastic DIP 0°C to +70°C TC4424MJA 8-Pin CerDIP – 55°C to +125°C
GENERAL DESCRIPTION
The TC4423/4424/4425 are higher output current ver­sions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428 series. All three families are pin-compatible. The TC4423/ 4424/4425 drivers are capable of giving reliable service in far more demanding electrical environments than their ante­cedents.
Although primarily intended for driving power MOSFETs, the TC4423/4424/4425 drivers are equally well-suited to driving any other load (capacitive, resistive, or inductive) which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transduc­ers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipa­tion limits of the package.
Temperature
Part No Package Range
TC4424EOE 16-Pin SO Wide – 40°C to +85°C TC4424EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4425MJA 8-Pin CerDIP – 55°C to +125°C TC4425COE 16-Pin SO Wide 0°C to +70°C TC4425CPA 8-Pin Plastic DIP 0°C to +70°C TC4425EOE 16-Pin SO Wide – 40°C to +85°C TC4425EPA 8-Pin Plastic DIP – 40°C to +85°C
FUNCTIONAL BLOCK DIAGRAM
INPUT
GND
EFFECTIVE
INPUT C = 20 pF
(EACH INPUT)
© 2001 Microchip Technology Inc. DS21421A
4.7V
V
INVERTING
300 mV
NONINVERTING
TC4423 TC4424 TC4425
NOTES:
1. TC4425 has one inverting and one noninverting driver.
2. Ground any unused driver input.
DUAL INVERTING DUAL NONINVERTING ONE INV., ONE NONINV.
DD
OUTPUT
TC4423/4/5-6 10/21/96
TC4423 TC4424 TC4425
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B......VDD + 0.3V to GND – 5.0V
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
Package Thermal Resistance
CerDIP R CerDIP R PDIP R PDIP R
PIN CONFIGURATIONS
................................................ 150°C/W
θJ-A
.................................................. 55°C/W
θJ-C
................................................... 125°C/W
θJ-A
..................................................... 45°C/W
θJ-C
4423 4424 4425
16 15 14 13 12 11 10 9
NC
IN A
NC GND GND
NC
IN B
NC
16-Pin SO Wide 1 2
3 4
TC4423
5
TC4424 TC4425
6 7 8
NC OUT A
OUT A V
DD
V
DD OUT B OUT B NC
NC OUT A OUT A
V
DD
V
DD OUT B OUT B NC
SOIC R SOIC R
................................................... 155°C/W
θJ-A
..................................................... 75°C/W
θJ-C
Operating Temperature Range
C Version...............................................0°C to +70°C
I Version ............................................- 25°C to +85°C
E Version ...........................................- 40°C to +85°C
M Version ........................................- 55°C to +125°C
Package Power Dissipation (TA 70°C)
Plastic DIP ......................................................730mW
CerDIP............................................................800mW
SOIC...............................................................470mW
NC OUT A OUT A
V
DD
V
DD OUT B OUT B NC
NC
IN A
GND
IN B
1 2 3 4
8-Pin DIP
TC4423 TC4424 TC4425
4423 4424 4425
8
NC
NC
OUT A V
DD
OUT B
OUT A V
DD
OUT B
7 6 5
NC OUT A
V
DD
OUT B
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
ELECTRICAL CHARACTERISTICS: T
= +25°C with 4.5V VDD 18V, unless otherwise specified.
A
Symbol Parameter Test Conditions Min Typ Max Unit Input
V
OH
V
IL
I
IN
Logic 1 High Input Voltage 2.4 V Logic 0 Low Input Voltage 0.8 V Input Current 0V ≤ VIN V
DD
– 1 1 µA
Output
V V R R I
PK
I
REV
OH OL O O
High Output Voltage V
– 0.025 V
DD
Low Output Voltage 0.025 V Output Resistance, High I Output Resistance, Low I
= 10 mA, VDD = 18V 2.8 5
OUT
= 10 mA, VDD = 18V 3.5 5
OUT
Peak Output Current 3 A Latch-Up Protection Duty Cycle ≤ 2% 1.5 A
Withstand Reverse Current t 300 µsec
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time Figure 1, CL = 1800pF 23 35 nsec Fall Time Figure 1, CL = 1800pF 25 35 nsec Delay Time Figure 1, CL = 1800pF 33 75 nsec Delay Time Figure 1, CL = 1800pF 38 75 nsec
Power Supply
I
S
TC4423/4/5-6 10/21/96
Power Supply Current VIN = 3V (Both Inputs) 1.5 2.5 mA
VIN = 0V (Both Inputs) 0.15 0.25 mA
2
© 2001 Microchip Technology Inc. DS21421A
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
90%
10%
10%
10%
t
D1
+5V
INPUT
16V
OUTPUT
0V
0V
90%
90%
OUTPUT
INPUT
0.1 µ
F CERAMIC
C = 1800pF
L
1 µF WIMA MKS-2
V
DD
= 16V
TC4424
(1/2 TC4425)
Test Circuit
1
2
t
D2
t
R
t
F
INPUT: 100 kHz,
square wave,
t
RISE
= t
FALL
10 nsec
TC4423 TC4424 TC4425
ELECTRICAL CHARACTERISTICS (Cont.) Over operating temperature range with 4.5V V
18V, unless
DD
otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage 2.4 ——V Logic 0 Low Input Voltage ——0.8 V Input Current 0V ≤ VIN V
DD
– 10 10 µA
Output
V V R R I
PK
I
REV
OH OL O O
High Output Voltage V
– 0.025 ——V
DD
Low Output Voltage ——0.025 V Output Resistance, High I Output Resistance, Low I
= 10 mA, VDD = 18V 3.7 8
OUT
= 10 mA, VDD = 18V 4.3 8
OUT
Peak Output Current 3 A Latch-Up Protection Duty Cycle 2% 1.5 —— A
Withstand Reverse Current t 300 µsec
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time Figure 1, CL = 1800pF 28 60 nsec Fall Time Figure 1, CL = 1800pF 32 60 nsec Delay Time Figure 1, CL = 1800pF 32 100 nsec Delay Time Figure 1, CL = 1800pF 38 100 nsec
Power Supply
I
S
NOTE: 1. Switching times guaranteed by design.
Power Supply Current VIN = 3V (Both Inputs) 2 3.5 mA
VIN = 0V (Both Inputs) 0.2 0.3 mA
Test Circuit
INPUT
INPUT: 100 kHz,
square wave,
t
= t
RISE
FALL
10 nsec
+5V
INPUT
0V
16V
OUTPUT
0V
© 2001 Microchip Technology Inc. DS21421A
(1/2 TC4425)
10%
t
D1
90%
10%
Figure 1. Inverting Driver Switching Time Figure 2. Noninverting Driver Switching Time
V
1
2
TC4423
t
F
= 16V
DD
1 µF WIMA MKS-2
0.1
C = 1800pF
L
90%
t
D2
µF CERAMIC
OUTPUT
t
R
10%
90%
3
TC4423/4/5-6 10/21/96
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