Microchip Technology TC4422MJA, TC4422EPA, TC4421CAT, TC4422CPA, TC4422CAT Datasheet

M

GND

300mV

2

g

g

g

t

t

e

t

9A High-Speed MOSFET Drivers

TC4421/TC4422

Features

• Tough CMOS Construction

• High Peak Output Current: 9A

• High Continuous Output Current: 2A Max

• Fast Rise and Fall Times:

- 30nsec with 4,700pF Load

- 180nsec with 47,000pF Load

• Short Internal Delays: 30nsec Typ.

• Low Output Impedance: 1.4Ω Typ.

Applications

• Line Drivers for Extra-Heavily-Loaded Lines

• Pulse Generators

• Driving the Largest MOSFETs and IGBTs

• Local Power ON/OFF Switch

• Motor and Solenoid Driver

Device Selection Table

Part Number Package Temp. Range

TC4421CAT 5-Pin TO-220 0°C to +70°C
TC4421CPA 8-Pin PDIP 0°C to +70°C
TC4421EPA 8-Pin PDIP -40°C to +85°C
TC4421MJA 8-Pin CERDIP -55°C to +125°C
TC4422CAT 5-Pin TO-220 0°C to +70°C
TC4422CPA 8-Pin PDIP 0°C to +70°C
TC4422EPA 8-Pin PDIP -40°C to +85°C
TC4422MJA 8-Pin CERDIP -55°C to +125°C

Package Type

8-Pin PDIP/CERDIPTO-220-5

1

V

DD

INPUT

2

TC4421
TC4421
TC4422

Tab is
Common
to V

DD

V

GND

GND

INPUT

OUTPUT

NC = No connection
NOTE: Duplicate pins must both be connected for proper operation.

GND

DD

TC4422

NC

3

45

V

DD

78OUTPUT

6

OUTPUT

GND

General Description

The TC4421/TC4422 are high current buffer/drivers
capable of driving large MOSFETs and IGBTs.

They are essentially immune to any form of upset
except direct overvoltage or over-dissipation – they
cannot be latched under any conditions within their
power and voltage ratings; they are not subject to
damage or imprope r operation when up t o 5V of ground
bounce is present on their ground terminals; they can
accept, without either damage or logic upset, more
than 1A inductive curre nt of ei ther polari ty bein g force d
back into their output s. In addition, a ll terminals are fu lly
protected against up to 4kV of electrostatic discharge.

The TC4421/TC4422 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.

Functional Block Diagram

Invertin

Outpu

Inpu

Effectiv

Inpu

C = 25pF

 2002 Microchip Technology Inc. DS21420B-page 1

Noninvertin

TC4421/TC442

Inverting/Noninvertin

TC4421/TC4422

1.0 ELECTRICAL
CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage .....................................................+20V

Input Voltage ....................(VDD + 0.3V) to (GND – 5V)

Input Current (V
Package Power Dissipation (T

PDIP.........................................................730mW

CERDIP....................................................800mW

5-Pin TO-220................................................1.6W

Package Power Dissipation (T

5-Pin TO-220 (With Heatsink)....................12.5W

Derating Factors (To Ambient )

PDIP........................................................8mW/°C

CERDIP................................................6.4mW/°C

5-Pin TO-220.........................................12mW/°C

Thermal Impedances (To Case)
5-Pin TO-220 R

Operating Temperature Range (Ambient)

C Version.........................................0°C to +70°C

E Version......................................-40°C to +85°C

M Version ...................................-55°C to +125°C

Storage Temperature Range..............-65°C to +150°C

> VDD)....................................50mA

IN

≤ 70°C)

A

≤ 25°C)

A

..................................10°C/W

θJ-C

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.

TC4421/TC4422 ELECTRICAL SPEC IFICA TI ON S

Electrical Characteristics: TA = +25°C, with 4.5V ≤ V

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

R

O

I

PK

I

DC

I

REV

Switching Time (Note 1)
t

R

t

F

t

D1

t

D2

Note 1: Switching times ensured by design.

Logic 1, High Input Voltage 2.4 1.8 — V
Logic 0, Low Input Voltage — 1.3 0.8 V
Input Current -10 — 10 µA0V ≤ V

High Output Voltage VDD – 0.025 ——V Figure 3-1
Low Output Voltage ——0.025 V Figure 3-1
Output Resistance, High — 1.4 — Ω I
Output Resistance, Low — 0.9 1.7 Ω I
Peak Output Current — 9 — AVDD = 18V
Continuous Output Current 2 —— A 10V ≤ VDD ≤ 18V, TA = +25°C

Latch-Up Protection
Withstand Reverse Current

Rise Time — 60 75 nsec Figure 3-1, CL = 10,000pF
Fall Time — 60 75 nsec Figure 3-1, CL = 10,000pF
Delay Time — 30 60 nsec Figure 3-1
Delay Time — 33 60 nsec Figure 3-1

≤ 18V, unless otherwise noted.

DD

≤ V

IN

DD

= 10mA, VDD = 18V

OUT

= 10mA, VDD = 18V

OUT

(TC4421/TC4422 CAT only)

— >1.5 — A Duty cycle ≤ 2%, t ≤ 300µsec

DS21420B-page 2  2002 Microchip Technology Inc.

TC4421/TC4422

TC4421/TC4422 ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: TA = +25°C, with 4.5V ≤ V

Symbol Parameter Min Typ Max Units Test Conditions

Power Supply

I

S

V

DD

Power Supply Current —

Operating Input Voltage 4.5 — 18 V

Electrical Characteristics: Over operating temperature range with 4.5V

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Logic 1, High Input Voltage 2.4 ——V
Logic 0, Low Input Voltage ——0.8 V
Input Current -10 — 10 µA0V ≤ V

Output

V

OH

V

OL

R

O

R

O

High Output Voltage VDD – 0.025 ——V Figure 3-1
Low Output Voltage ——0.025 V Figure 3-1
Output Resistance, High — 2.4 3.6 Ω I

Output Resistance, Low — 1.8 2.7 Ω I
Switching Ti me (Note 1)
t

R

t

F

t

D1

t

D2

Rise Time — 60 120 nsec Figure 3-1, CL = 10,000pF

Fall Time — 60 120 nsec Figure 3-1, CL = 10,000pF

Delay Time — 50 80 nsec Figure 3-1

Delay Time — 65 80 nsec Figure 3-1

Power Supply

I

S

V

DD

Note 1: Switching times ensured by design.

Power Supply Current —

Operating Input Voltage 4.5 — 18 V

≤ 18V, unless otherwise noted.

DD

—

55

0.2

1.5

150

≤ VDD ≤ 18V, unless otherwise noted.

—

0.06

0.45

3

0.2

V

mA

µA

= 3V

IN

= 0V

V

IN

= 10mA, VDD = 18V

OUT

= 10mA, VDD = 18V

OUT

mA VIN = 3V

= 0V

V

IN

≤ V

IN

DD

 2002 Microchip Technology Inc. DS21420B-page 3

TC4421/TC4422

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(8-Pin PDIP,

CERDIP)

1V
2 INPUT Control input, TTL/CMOS compatible input.
3 NC No Connection.
4 GND Ground.
5 GND Ground.
6 OUTPUT CMOS totem pole output.
7 OUTPUT CMOS totem pole output.
8V

Symbol Description

DD

DD

Supply input, 4.5V to 18V.

Supply input, 4.5V to 18V.

Pin No.

(5-Pin TO-220)

1 INPUT Control input, TTL/CMOS compatible input.
2 GND Ground.
3V
4 GND Ground
5 OUTPUT CMOS totem pole output.

Symbol Description

DD

Supply input, 4.5V to 18V.

DS21420B-page 4  2002 Microchip Technology Inc.

3.0 APPLICATIONS INFORMATION

1

6

5

pF

1

1

t

8V

put

FIGURE 3-1: SWITCHING TIME TEST CIRCUITS

= 1

.

0.1

Inpu

TC442

.

Out

= 10,000

+5V

Input

0V

+18V

Output

0V

Input: 100kHz,

square wave,

= t

t

RISE

TC4421/TC4422

90%

FALL

10%

≤ 10nsec

t

90%

D1

t

F t

10%

D2

10%

t

R

90%

 2002 Microchip Technology Inc. DS21420B-page 5