Microchip Technology TC4422MJA, TC4422EPA, TC4421CAT, TC4422CPA, TC4422CAT Datasheet

M

GND

300mV

2

g

g

g

t

t

e

t

9A High-Speed MOSFET Drivers

TC4421/TC4422

Features

• Tough CMOS Construction

• High Peak Output Current: 9A

• High Continuous Output Current: 2A Max

• Fast Rise and Fall Times:

- 30nsec with 4,700pF Load

- 180nsec with 47,000pF Load

• Short Internal Delays: 30nsec Typ.

• Low Output Impedance: 1.4Ω Typ.

Applications

• Line Drivers for Extra-Heavily-Loaded Lines

• Pulse Generators

• Driving the Largest MOSFETs and IGBTs

• Local Power ON/OFF Switch

• Motor and Solenoid Driver

Device Selection Table

Part Number Package Temp. Range

TC4421CAT 5-Pin TO-220 0°C to +70°C
TC4421CPA 8-Pin PDIP 0°C to +70°C
TC4421EPA 8-Pin PDIP -40°C to +85°C
TC4421MJA 8-Pin CERDIP -55°C to +125°C
TC4422CAT 5-Pin TO-220 0°C to +70°C
TC4422CPA 8-Pin PDIP 0°C to +70°C
TC4422EPA 8-Pin PDIP -40°C to +85°C
TC4422MJA 8-Pin CERDIP -55°C to +125°C

Package Type

8-Pin PDIP/CERDIPTO-220-5

1

V

DD

INPUT

2

TC4421
TC4421
TC4422

Tab is
Common
to V

DD

V

GND

GND

INPUT

OUTPUT

NC = No connection
NOTE: Duplicate pins must both be connected for proper operation.

GND

DD

TC4422

NC

3

45

V

DD

78OUTPUT

6

OUTPUT

GND

General Description

The TC4421/TC4422 are high current buffer/drivers
capable of driving large MOSFETs and IGBTs.

They are essentially immune to any form of upset
except direct overvoltage or over-dissipation – they
cannot be latched under any conditions within their
power and voltage ratings; they are not subject to
damage or imprope r operation when up t o 5V of ground
bounce is present on their ground terminals; they can
accept, without either damage or logic upset, more
than 1A inductive curre nt of ei ther polari ty bein g force d
back into their output s. In addition, a ll terminals are fu lly
protected against up to 4kV of electrostatic discharge.

The TC4421/TC4422 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.

Functional Block Diagram

Invertin

Outpu

Inpu

Effectiv

Inpu

C = 25pF

 2002 Microchip Technology Inc. DS21420B-page 1

Noninvertin

TC4421/TC442

Inverting/Noninvertin

TC4421/TC4422

1.0 ELECTRICAL
CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage .....................................................+20V

Input Voltage ....................(VDD + 0.3V) to (GND – 5V)

Input Current (V
Package Power Dissipation (T

PDIP.........................................................730mW

CERDIP....................................................800mW

5-Pin TO-220................................................1.6W

Package Power Dissipation (T

5-Pin TO-220 (With Heatsink)....................12.5W

Derating Factors (To Ambient )

PDIP........................................................8mW/°C

CERDIP................................................6.4mW/°C

5-Pin TO-220.........................................12mW/°C

Thermal Impedances (To Case)
5-Pin TO-220 R

Operating Temperature Range (Ambient)

C Version.........................................0°C to +70°C

E Version......................................-40°C to +85°C

M Version ...................................-55°C to +125°C

Storage Temperature Range..............-65°C to +150°C

> VDD)....................................50mA

IN

≤ 70°C)

A

≤ 25°C)

A

..................................10°C/W

θJ-C

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.

TC4421/TC4422 ELECTRICAL SPEC IFICA TI ON S

Electrical Characteristics: TA = +25°C, with 4.5V ≤ V

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

R

O

I

PK

I

DC

I

REV

Switching Time (Note 1)
t

R

t

F

t

D1

t

D2

Note 1: Switching times ensured by design.

Logic 1, High Input Voltage 2.4 1.8 — V
Logic 0, Low Input Voltage — 1.3 0.8 V
Input Current -10 — 10 µA0V ≤ V

High Output Voltage VDD – 0.025 ——V Figure 3-1
Low Output Voltage ——0.025 V Figure 3-1
Output Resistance, High — 1.4 — Ω I
Output Resistance, Low — 0.9 1.7 Ω I
Peak Output Current — 9 — AVDD = 18V
Continuous Output Current 2 —— A 10V ≤ VDD ≤ 18V, TA = +25°C

Latch-Up Protection
Withstand Reverse Current

Rise Time — 60 75 nsec Figure 3-1, CL = 10,000pF
Fall Time — 60 75 nsec Figure 3-1, CL = 10,000pF
Delay Time — 30 60 nsec Figure 3-1
Delay Time — 33 60 nsec Figure 3-1

≤ 18V, unless otherwise noted.

DD

≤ V

IN

DD

= 10mA, VDD = 18V

OUT

= 10mA, VDD = 18V

OUT

(TC4421/TC4422 CAT only)

— >1.5 — A Duty cycle ≤ 2%, t ≤ 300µsec

DS21420B-page 2  2002 Microchip Technology Inc.

TC4421/TC4422

TC4421/TC4422 ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: TA = +25°C, with 4.5V ≤ V

Symbol Parameter Min Typ Max Units Test Conditions

Power Supply

I

S

V

DD

Power Supply Current —

Operating Input Voltage 4.5 — 18 V

Electrical Characteristics: Over operating temperature range with 4.5V

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Logic 1, High Input Voltage 2.4 ——V
Logic 0, Low Input Voltage ——0.8 V
Input Current -10 — 10 µA0V ≤ V

Output

V

OH

V

OL

R

O

R

O

High Output Voltage VDD – 0.025 ——V Figure 3-1
Low Output Voltage ——0.025 V Figure 3-1
Output Resistance, High — 2.4 3.6 Ω I

Output Resistance, Low — 1.8 2.7 Ω I
Switching Ti me (Note 1)
t

R

t

F

t

D1

t

D2

Rise Time — 60 120 nsec Figure 3-1, CL = 10,000pF

Fall Time — 60 120 nsec Figure 3-1, CL = 10,000pF

Delay Time — 50 80 nsec Figure 3-1

Delay Time — 65 80 nsec Figure 3-1

Power Supply

I

S

V

DD

Note 1: Switching times ensured by design.

Power Supply Current —

Operating Input Voltage 4.5 — 18 V

≤ 18V, unless otherwise noted.

DD

—

55

0.2

1.5

150

≤ VDD ≤ 18V, unless otherwise noted.

—

0.06

0.45

3

0.2

V

mA

µA

= 3V

IN

= 0V

V

IN

= 10mA, VDD = 18V

OUT

= 10mA, VDD = 18V

OUT

mA VIN = 3V

= 0V

V

IN

≤ V

IN

DD

 2002 Microchip Technology Inc. DS21420B-page 3

TC4421/TC4422

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(8-Pin PDIP,

CERDIP)

1V
2 INPUT Control input, TTL/CMOS compatible input.
3 NC No Connection.
4 GND Ground.
5 GND Ground.
6 OUTPUT CMOS totem pole output.
7 OUTPUT CMOS totem pole output.
8V

Symbol Description

DD

DD

Supply input, 4.5V to 18V.

Supply input, 4.5V to 18V.

Pin No.

(5-Pin TO-220)

1 INPUT Control input, TTL/CMOS compatible input.
2 GND Ground.
3V
4 GND Ground
5 OUTPUT CMOS totem pole output.

Symbol Description

DD

Supply input, 4.5V to 18V.

DS21420B-page 4  2002 Microchip Technology Inc.

3.0 APPLICATIONS INFORMATION

1

6

5

pF

1

1

t

8V

put

FIGURE 3-1: SWITCHING TIME TEST CIRCUITS

= 1

.

0.1

Inpu

TC442

.

Out

= 10,000

+5V

Input

0V

+18V

Output

0V

Input: 100kHz,

square wave,

= t

t

RISE

TC4421/TC4422

90%

FALL

10%

≤ 10nsec

t

90%

D1

t

F t

10%

D2

10%

t

R

90%

 2002 Microchip Technology Inc. DS21420B-page 5

TC4421/TC4422

4.0 TYPICAL CHARACTERISTICS

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are pro vided for information al purposes only. The performa nce characteristic s listed herein ar e
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

220

200

180

160

140

120

(nsec)

100

RISE

t

80

60

40

20

0

4681012

22,000pF

10,000pF

4700pF

1000pF

Rise TIme vs. Capacitive Load

300

250

200

150

(nsec)

RISE

t

100

Rise Time vs. Supply Voltage

180

160

140

120

100

(nsec)

80

FALL

t

60

4700pF

40

20

1000pF

0

V

DD

14 16 18

(V)

4 6 8 101214 1618

22,000pF

10,000pF

V

(V)

DD

Fall TIme vs. Capacitive Load

300

Fall Time vs. Supply Voltage

5V

10V

15V

10V

5V

15V

250

200

150

(nsec)

FALL

t

100

50

0

100 1000 10,000 100,000

C

LOAD

(pF)

Rise and Fall Times vs. Temperature

90

= 10,000pF

C

LOAD

V

80

70

60

TIME (nsec)

50

40

30

= 15V

DD

t

RISE

t

FALL

-40 0 40 80 120

(

T

°C)

A

50

0

100 1000 10,000

C

LOAD

(pF)

Propagation Delay vs. Supply Voltage

50

C

= 1000pF

LOAD

45

40

35

TIME (nsec)

30

25

t

D1

6

t

D2

810121416184

V

(V)

DD

100,000

DS21420B-page 6  2002 Microchip Technology Inc.

TYPICAL CHARACTERISTICS (CONTINUED)

TC4421/TC4422

Supply Current vs. Capacitive Load

220

200

2MHz

180

160

140

(mA)

120

100

SUPPLY

I

1.125MHz

80

632kHz

60

40

200kHz

20

0

100

C

LOAD

(pF)

Supply Current vs. Capacitive Load

180

VDD = 12V

160

140

120

100

(mA)

SUPPLY

I

2MHz

80

60

40

20

1.125MHz

632kHz

200kHz

0

100 100,00010,0001000

C

LOAD

(pF)

VDD = 18V

100,00010,0001000

63.2kHz

20kHz

63.2kHz

20kHz

Supply Current vs. Frequency

180

VDD = 18V

160

140

120

100

(mA)

80

SUPPLY

I

60

40

20

0

10 100 1000

0.1µF

47,000pF

10,000pF

FREQUENCY (kHz)

22,000pF

470pF

Supply Current vs. Frequency

180

VDD = 12V

160

140

120

100

(mA)

80

SUPPLY

I

60

0.1µF

40

20

0

10 100 1000

FREQUENCY (kHz)

22,000pF

10,000pF

47,000pF

4700pF

4700pF

470pF

Supply Current vs. Capacitive Load

100

VDD = 6V

90

80

70

60

(mA)

50

40

SUPPLY

I

2MHz

30

20

10

0
100 100,00010,0001000

632kHz

C

LOAD

(pF)

200kHz

63.2kHz

20kHz

(mA)

SUPPLY

I

Supply Current vs. Frequency

120

VDD = 6V

100

80

60

40

20

0

10

10 100 1000

4700pF

0.1µF

100 1000

FREQUENCY (kHz)

47,000pF

22,000pF

10,000pF

470pF

 2002 Microchip Technology Inc. DS21420B-page 7

TC4421/TC4422

TYPICAL CHARACTERISTICS (CONTINUED)

Propagation Delay vs. Input Amplitude

120

110

100

90

80

70

60

50

TIME (nsec)

40

30

t

D2

t

D1

20

10

0

12345678910

INPUT (V)

Crossover Energy vs. Supply Voltage

-6

10

-7

10

A•sec

-8

10

4681012141618

NOTE: The values on this graph represent the loss seen

by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.

VDD = 10V

= 10,000pF

C

LOAD

V

(V)

DD

Propagation Delay vs. Temperature

50

VDD = 18V
C

= 10,000pF

LOAD

45

V

= 5V

IN

40

35

TIME (nsec)

30

25

20

t

D2

-40 -20 0 20 40 60 80 100 120-60

T

t

D1

(

°C)

A

Quiescent Supply Current vs. Temperature

3

10

VDD = 18V

(µA)

INPUT = 1

2

10

QUIESCENT

I

INPUT = 0

-40 -20 0 20 40 60 80 100 120-60

(

T

°C)

J

Low-State Output Resistance

High-State Output Resistance

vs. Supply Voltage

6

5.5

5

4.5

4

(Ω)

3.5

3

DS(ON)

R

2.5

2

1.5

1

0.5
46 81012141618

T

= 150

°C

J

= 25

°C

T

J

V

(V)

DD

6

5.5

5

4.5

4

(Ω)

3.5

3

DS(ON)

R

2.5

2

1.5

1

0.5
46 81012141618

vs. Supply Voltage

= 150

°

C

T

J

T

= 25

°

C

J

V

(V)

DD

DS21420B-page 8  2002 Microchip Technology Inc.

5.0 PACKAGING INFORMATION

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

P

5.1 Package Marking Information

Package marking data not available at this time.

5.2 Package Dimensions

-Pin Plastic DI

TC4421/TC4422

.260 (6.60
.240 (6.10

.045 (1.14
.030 (0.76

.200 (5.08
.140 (3.56

.150 (3.81
.115 (2.92

.400 (10.16

.348 (8.84

.110 (2.79
.090 (2.29

.070 (1.78
.040 (1.02

.022 (0.56
.015 (0.38

.040 (1.02
.020 (0.51

.310 (7.87
.290 (7.37

.015 (0.38
.008 (0.20

.400 (10.16

.310 (7.87

Dimensions: inches (mm)

 2002 Microchip Technology Inc. DS21420B-page 9

TC4421/TC4422

)

)

)

)

)

)

.

.

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

(

)

Package Dimensions (Continued)

8-Pin CERDIP (Narrow)

.110 (2.79
.090 (2.29

.300 (7.62
.230 (5.84

.055 (1.40) MAX

.200 (5.08
.160 (4.06

.200 (5.08
.125 (3.18

5-Pin TO-220

.117 (2.97)
.103

.293 (7.44)
.204 (5.18)

2.62

.400 (10.16

.370 (9.40

.065 (1.65
.045 (1.14

.415 (10.54)

.390 (9.91)

.020 (0.51
.016 (0.41

.020 (0.51) MIN

.040 (1.02
.020 (0.51

.150 (3.81

.156 (3.96)
.140 (3.56)

DIA.

.015 (0.38
.008 (0.20

.055 (1.40)
.045 (1.14)

.613 (15.57)
.569 (14.45)

.320 (8.13
.290 (7.37

.400 (10.16

.320 (8.13

Dimensions: inches (mm)

.185 (4.70)
.165 (4.19)

3

°

- 7.5°

5 PLCS.

.590 (14.99)
.482 (12.24)

.037 (0.95)
.025 (0.64)

.025 (0.64)
.012 (0.30)

PIN 1

.273 (6.93)

.072 (1.83)
.062 (1.57)

.115 (2.92)
.087 (2.21)

.263 (6.68)

Dimensions: inches (mm)

DS21420B-page 10  2002 Microchip Technology Inc.

TC4421/TC4422

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom­mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: [phone]

3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2002 Microchip Technology Inc. DS21420B-page11

TC4421/TC4422

NOTES:

DS21420B-page12  2002 Microchip Technology Inc.

TC4421/TC4422

Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com­ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con­veyed, implicitly or otherwise, under any intellectual property
rights.

Trademarks

The Microchip name and logo, the Microchip logo, FilterLab,

EELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,

K
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip T ech­nology Incorporated in the U.S.A. and other countries.

dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode
and T otal Endurance are trademarks of Microchip T echnology
Incorporated in the U.S.A.

Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their
respective companies.

© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.

Printed on recycled paper.

Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro

devices, Serial EEPROMs, micrope ri ph era ls,
non-volatile memory and ana l og pro duc ts. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.

®

8-bit MCUs, KEELOQ

®

code hoppin g

 2002 Microchip Technology Inc. DS21420B-page 13

M

WORLDWIDE SALES AND SERVICE

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Tung Hua North Road
Taipei, 105, Taiwan
Tel: [phone] Fax: [phone]

EUROPE

Denmark

Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: [phone] Fax: [phone]

France

Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: [phone] Fax: [phone]

Germany

Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: [phone] Fax: [phone]

Italy

Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: [phone] Fax: [phone]

United Kingdom

Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: [phone] Fax: [phone]

03/01/02

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DS21420B-page 14  2002 Microchip Technology Inc.