Datasheet TC428EOA, TC428CPA, TC428COA, TC427MJA, TC427IJA Datasheet (Microchip Technology)

M

1.5A Dual High-Speed Power MOSFET Drivers

TC426/TC427/TC428

Features

• High-Speed Switching (CL = 1000pF): 30nsec

• High Peak Output Current: 1.5A

• High Output Voltage Swing

-V

-25mV

DD

- GND +25mV

• Low Input Current (Logic "0" or "1"): 1µA

• TTL/CMOS Input Compatible

• Available in Inverting and Noninverting
Configurations

• Wide Operating Supply Voltage

- 4.5V to 18V

• Current Consumption

- Inputs Low – 0.4mA

- Inputs High – 8mA

• Single Supply Operation

• Low Output Impedance: 6Ω

• Pinout Equivalent of DS0026 and MMH0026

• Latch-Up Resist ant: Withs tands > 500mA
Reverse Current

• ESD Protected: 2kV

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Clock Line Driver

• Coax Cable Driver

Device Selection Table

Part

Number

TC426COA
TC426CPA
TC426EOA
TC426EPA
TC426IJA
TC426MJA

TC427COA
TC427CPA
TC427EOA
TC427EPA
TC427IJA
TC427MJA

TC428COA
TC428CPA
TC428EOA
TC428EPA
TC428IJA
TC428MJA

Package Configuration

8-Pin SOIC
8-Pin PDIP
8-Pin SOIC

8-Pin PDIP
8-Pin CERDIP
8-Pin CERDIP

8-Pin SOIC

8-Pin PDIP

8-Pin SOIC

8-Pin PDIP
8-Pin CERDIP
8-Pin CERDIP

8-Pin SOIC

8-Pin PDIP

8-Pin SOIC

8-Pin PDIP
8-Pin CERDIP
8-Pin CERDIP

Inverting
Inverting
Inverting
Inverting
Inverting
Inverting

Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting

Complementary
Complementary
Complementary
Complementary
Complementary
Complementary

Temp.

Range

0°C to +70°C
0°C to +70°C

-40°C to +85°C

-40°C to +85°C

-25°C to +85°C

-55°C to +125°C
0°C to +70°C

0°C to +70°C

-40°C to +85°C

-40°C to +85°C

-25°C to +85°C

-55°C to +125°C
0°C to +70°C

0°C to +70°C

-40°C to +85°C

-40°C to +85°C

-25°C to +85°C

-55°C to +125°C

Package Type

8-Pin PDIP/SOIC/CERDIP

1

NC

2

IN A

3

GND

IN B

IN A

GND

IN B

IN A

GND

IN B

NC = No internal connection

NC

NC

TC426

4

1

2

3

TC427

4

1

2

TC428

3

4

NC

78OUT A

V

6

DD

5

OUT B

NC

78OUT A

6

V

DD

5

OUT B

NC

8

OUT A

7

6

V

DD

5

OUT B

2, 4 7, 5

Inverting

2, 4 7, 5

Noninverting

2 7

4 5

Complementary

General Description

The TC426/TC427/TC428 are dual CMOS high-speed
drivers. A TTL/CMOS input voltage level is translated
into a rail-to-rail ou tput v oltage level swin g. The CMOS
output is within 25mV of ground or positive supply.

The low impedance, high-current driver outputs swing
a 1000pF load 18V in 30nsec. The unique current and
voltage drive qualities make the TC426/TC427/TC428
ideal power MOSFET drivers, line drivers, and DC-to­DC converter building blocks.

Input logic signa ls may equal the power su pply volt age.
Input current is a low 1µA, making direct interface
to CMOS/bipolar switch-mode power supply control
ICs possible, as well as open-collector analog
comparators.

Quiescent power suppl y current is 8mA maximum . The
TC426 requires 1/5 the current of the pin-compatible
bipolar DS0026 device. This is important in DC-to-DC
converter applicati ons with pow er effic iency constra ints
and high-frequency switch-mode power supply
applications. Quiescent current is typically 6mA when
driving a 1000pF load 18V at 100kHz.

The inverting TC426 driver is pin-compatible with the
bipolar DS0026 and MMH0026 devices. The TC427 is
noninverting; the TC428 contai ns an i nverting a nd non­inverting driver.

Other pin compatible driver families are the TC1426/
TC1427/TC1428, TC4426/TC4427/TC4428 and
TC4426A/TC4427A/TC4428A.

 2002 Microchip Technology Inc. DS21415B-page 1

TC426/TC427/TC428

Functional Block Diagram

+

V

≈500µA

≈2.5mA

TC426
TC427
TC428

Input

GND

NOTE: TC428 has one inverting and one noninverting driver.
Ground any unused driver input.

Noninverting

Output

Inverting

Output

(TC426)(TC427)

DS21415B-page 2  2002 Microchip Technology Inc.

TC426/TC427/TC428

1.0 ELECTRICAL
CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage.....................................................+20V

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.

Input Voltage, Any Terminal

................................... V

Power Dissipation (T

≤ 70°C)

A

+ 0.3V to GND – 0.3V

DD

PDIP........................................................ 730mW

CERDIP................................................... 800mW

SOIC........................................................ 470mW

Derating Factor

PDIP....................................................... 8mW/°C

CERDIP............................................... 6.4mW/°C

SOIC....................................................... 4mW/°C

Operating Temperature Range

C Version.........................................0°C to +70°C

I Version....................................... -25°C to +85°C

E Version..................................... -40°C to +85°C

M Version................................... -55°C to +125°C

Storage Temperature Range ............. -65°C to +150°C

TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA = +25°C with 4.5V ≤ V

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

OH

R

OL

I

PK

Switching Ti me (Note 1)
t

R

t

F

t

D1

t

D2

Power Supply

I

S

Note 1: Switching times ensured by design.

Logic 1, High Input Voltage 2.4 ——V
Logic 0, Low Input Voltage ——0.8 V
Input Current -1 — 1 µA0V ≤ V

High Output Voltage VDD – 0.025 —— V
Low Output Voltage ——0.025 V
High Output Resistance — 10 15 Ω I
Low Output Resistance — 610Ω I
Peak Output Current — 1.5 — A

Rise Time ——30 nsec Figure 3-1, Figure 3-2
Fall Time ——30 nsec Figure 3-1, Figure 3-2
Delay Time ——50 nsec Figure 3-1, Figure 3-2
Delay Time ——75 nsec Figure 3-1, Figure 3-2

Power Supply Current —

≤ 18V, unless otherwise noted.

DD

—

—
—

8

0.4

≤ V

IN

DD

= 10mA, VDD = 18V

OUT

= 10mA, VDD = 18V

OUT

mA VIN = 3V (Both Inputs)

= 0V (Both Inputs)

V

IN

 2002 Microchip Technology Inc. DS21415B-page 3

TC426/TC427/TC428

TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: Over operating temperature range with 4.5V ≤ V
Input

V

IH

V

IL

I

IN

Logic 1, High Input Voltage 2.4 —— V
Logic 0, Low Input Voltage ——0.8 V
Input Curre n t -10 — 10 µA0V ≤ V

Output

V

OH

V

OL

R

OH

R

OL

High Output Voltage VDD – 0.025 —— V
Low Output Voltage ——0.025 V
High Output Resistance — 13 20 Ω I

Low Output Resistance — 815Ω I
Switching Time (Note 1)
t

R

t

F

t

D1

t

D2

Rise Time ——60 nsec Figure 3-1, Figure 3-2

Fall Time ——60 nsec Figure 3-1, Figure 3-2

Delay Time ——75 nsec Figure 3-1, Figure 3-2

Delay Time ——120 nsec Figure 3-1, Figure 3-2

Power Supply

I

S

Note 1: Switching times ensured by design.

Power Supply Current —

—

—
—

≤ 18V, unless otherwise noted.

DD

12

0.6

≤ V

IN

DD

= 10mA, VDD = 18V

OUT

= 10mA, VDD = 18V

OUT

mA VIN = 3V (Both Inputs)

V

= 0V (Both Inputs)

IN

DS21415B-page 4  2002 Microchip Technology Inc.

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(8-Pin PDIP,

SOIC, CERD IP)

1 NC No Internal Connection.

2 IN A Control Input A, TTL/CMOS compatible logic input.

3 GND Ground.

4 IN B Control Input B, TTL/CMOS compatible logic input.

5 OUT B CMOS totem-pole output.

6V

7 OUT A CMOS totem-pole output.

8 NC No internal Connection.

Symbol Description

DD

Supply input, 4.5V to 18V.

TC426/TC427/TC428

 2002 Microchip Technology Inc. DS21415B-page 5

TC426/TC427/TC428

3.0 APPLICATIONS INFORMATION

3.1 Supply Bypassing

Charging and discharging large capacitive loads
quickly re qui res larg e cu rre nts. For e xamp le, ch argi ng
a 1000pF load to 18V in 25nsec requires an 0.72A
current from the device power supply.

T o ens ure low supply im pedance over a wide frequency
range, a parallel capacitor combination is recom­mended for supply bypass ing. Low-indu ctance c eramic
disk capacitors with short lead lengths (< 0.5 in.) should
be used. A 1µF film capacitor in parallel with one or two

0.1µF ceramic disk capacitors normally provides
adequate bypassing.

3.2 Grounding

The TC426 and TC428 contain inverting drivers.
Ground potential drops developed in common ground
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics.

Individual ground returns for the input and output
circuits or a ground plane should be used.

3.3 Input Stage

The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5mA current source
load. With a logic "1" input, the maximum quiescent
supply current is 8mA. Logic "0" input level signals
reduce quiescent current to 0.4mA maximum.
Minimum power dissipation occurs for logic "0" inputs
for the TC426/TC427/TC428. Unused driver inputs

must be connected to V

The drivers are designed with 100mV of hysteresis.
This provides clean transitions and minimizes output
stage current spiking when changing states. Input
voltage thresholds are approximately 1.5V, making the
device TTL compatible over the 4.5V to 18V supply
operating range. Input current is less than 1µA over this
range.

The TC426/TC427/TC428 may be directly driven by
the TL494, SG1526/1527, SG1524, SE5560, and
similar switch-mode power supply integrated circuits.

or GND.

DD

3.4 Power Dissipation

The supply current vs frequency and supply current
vs capacitive load characteristic curves will aid in
determining power dissipation calculations.

The TC426/TC427/TC428 CMOS drivers have greatly
reduced quies cent DC pow er consumpti on. Maximu m
quiescent current is 8mA compared to the DS0026
40mA specification. For a 15V supply, power
dissipation is typ ic all y 40m W.

Two other power dissipation components are:

• Output stage AC and DC load power.

• Transition state power.

Output stage power is:

Po = P

Where:

Vo = DC output volt ag e
I

DC

f = Switching frequency
Vs = Supply voltage

In power M OSFET driv e applica tions the P
negligible. MOSFET power trans is tor s are hi gh im pe d­ance, capacitive input devices. In applications where
resistive loads or relays are driven, the P
will normally dominate.

The magnitude of P
cases:

A. B.

1. f = 200kHZ 1. f = 200kHz

2. C

3. Vs = 18V 3. Vs = 15V

4. P

During output level state changes, a current surge will
flow through the series connected N and P channel
output MOSF ETS as one de vice is turni ng "O N" whi le
the other is turning "OFF". Th e curren t spike f lows only
during output transitions . The input levels shoul d not be
maintained between the logic "0" and logic "1" levels.

Unused driver inputs must be tied to ground and
not be allowed to float. A verage p ower dissip ation will

be reduced by mini mizi ng input rise ti mes. As sho wn i n
the characteristic curves, average supply current is
frequency dependent.

+ PAC

DC

= Vo (I

= DC output load current

AC

) + f CL V

DC

AC

=1000pf 2. CL=1000pf

L

= 65mW 4. PAC= 45mW

2

S

is readily estimated for several

term is

DC

component

DC

DS21415B-page 6  2002 Microchip Technology Inc.

TC426/TC427/TC428

FIGURE 3-1: INVERTING DRIVER

SWITCHING TIME
TEST CIRCUIT

= 18V

V

DD

Input: 100kHz,

square wave,

= t

t

RISE

Output

FALL

+5V

Input

18V

≤ 10nsec

0V

0V

Input

10%

(1/2 TC428)

t

D1

90%

10%

1

2

TC426

t

F

1µF

0.1µF

Output

CL = 1000pF

90%

t

D2

t

R

10%

90%

FIGURE 3-2: NONINVERTING DRIVER

SWITCHING TIME
TEST CIRCUIT

VDD = 18V

Input: 100kHz,

square wave,

t

= t

RISE

+5V

Input

0V

18V

Output

0V

FALL

Input

≤ 10nsec

10%

TC427

(1/2 TC428)

90%

t

D1

1

2

10%

1µF

t

R

C

90%

t

D2

0.1µF

L

Output

= 1000pF

90%

10%

t

F

FIGURE 3-3: VOLTA GE DOUBLER

+15V

0.1µF

fIN = 10kHz

2

1/2

TC426

6

3

+

4.7µF

–

–

+

7

10µF

1N4001

1N4001

FIGURE 3-4: VOLTAGE INVERTER

+15V

+ –

0.1µF 4.7µF

fIN = 10kHz

2

1/2

TC426

6

7

3

+ –

10µF

1N4001

1N4001

30.

29.

28.

27.

(V)

26.

OUT

25.

V

V

OUT

+

47µF

–

V

OUT

–

47µF

+

24.

23.

22.

0

10 20 30 40 50 60 70 80 90

-5

-6

-7

-8

-9

(V)

OUT

-10

V

-11

-12

-13

-14

0 10 20 30 40 50 60 70 80 90

I

OUT

I

OUT

(mA)

(mA)

100

100

 2002 Microchip Technology Inc. DS21415B-page 7

TC426/TC427/TC428

4.0 TYPICAL CHARACTERISTICS

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are pro vided for information al purposes only. The performance characte ristics listed herei n are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Rise and Fall Times vs.

Supply Voltage

70

60

50

40

30

TIME (ns)

20

10

05

10

SUPPLY VOLTAGE (V)

Delay Times vs. Temperature

100

CL = 1000pF

= 18V

V

90

DD

80

70

60

50

DELAY TIME (ns)

40

30

-25

25 75

0

50 100 150

TEMPERATURE (°C)

CL = 1000pF
T

= +25°C

A

15 20

t

D2

t

D1

125

t

R

t

F

Delay Times vs. Supply Voltage

90

80

70

60

50

DELAY TIME (ns)

40

30

51015

0

SUPPLY VOLTAGE (V)

CL = 1000pF

= +25°C

T

A

Supply Current vs.

Capacitive Load

80

TA = +25°C

70

V

= 18V

DD

60

50

40

30

20

SUPPLY CURRENT (mA)

10

0

10

100 1000 10K

CAPACITIVE LOAD (pF)

200kHz

t

D2

t

D1

400kHz

20kHz

20

Rise and Fall Times vs.

Temperature

40

C

= 1000pF

L

= 18V

V

35

DD

30

25

20

TIME (ns)

15

10

0

-25 0 25 150

50 75 100 125

TEMPERATURE (

°C)

Rise and Fall Times vs.

Capacitive Load

1K

TA = +25°C
V

= 18V

DD

100

TIME (ns)

10

1

10

100

CAPACITIVE LOAD (pF)

1000

t

R

t

F

t

R

t

F

10K

Supply Current vs. Frequency

30

= +25°C

T

A

C

= 1000pF

L

20

10

SUPPLY CURRENT (mA)

0

1

10 100 1000

FREQUENCY (kHz)

High Output vs. Voltage

= 18V

V

DD

10V

2.20

T

A

1.76

(V)

1.32

OUT

– V

0.88

DD

V

5V



0.44

10

0

= +25°C

V

= 8V

DD

13V

18V

20 30 40 50 60 708090 100

CURRENT SOURCED (mA)

OUTPUT VOLTAGE (V)

Low Output vs. Voltage

1.20

TA = +25°C

0.96

0.72

0.48

0.24

10

20 30 40 50 60 70 80 90 100

0

CURRENT SUNK (mA)

V

= 5V

DD

10V

15V

DS21415B-page 8  2002 Microchip Technology Inc.

TYPICAL CHARACTERISTICS (CONTINUED)

00

0

00

600

800

000

00

00

600

01020

30405060708090100110120

)

8

P

8-

s

TC426/TC427/TC428

Supply Voltage vs.

Quiescent Supply Current

20

No Load
Both Inputs Logic "1"

= +25°C

T

A

15

10

5

SUPPLY VOLTAGE (V)

0

123456

SUPPLY CURRENT (mA)

Thermal Derating Curve

1

14

12

1

-Pin SOIC

-Pin DI

Pin CERDIP

Supply Voltage vs.

Quiescent Supply Current

20

No Load
Both Inputs Logic "0"

= +25°C

T

A

15

10

5

SUPPLY VOLTAGE (V)

0

0

50 100 150 200 250 300

SUPPLY CURRENT (µA)

MAX. POWER (mW)

4

2

AMBIENT TEMPERATURE (C

 2002 Microchip Technology Inc. DS21415B-page 9

TC426/TC427/TC428

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

P

)

)

)

)

)

)

.

.

)

(

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

Package mar k ing data not available at this time.

5.2 Package Dimensions

-Pin Plastic DI

.260 (6.60
.240 (6.10

.045 (1.14
.030 (0.76

.400 (10.16

.348 (8.84

.200 (5.08
.140 (3.56

.150 (3.81
.115 (2.92

.110 (2.79
.090 (2.29

8-Pin CERDIP (Narrow)

.110 (2.79
.090 (2.29

.070 (1.78
.040 (1.02

.022 (0.56
.015 (0.38

.040 (1.02
.020 (0.51

.300 (7.62
.230 (5.84

.310 (7.87
.290 (7.37

.015 (0.38
.008 (0.20

.400 (10.16

.310 (7.87

Dimensions: inches (mm)

.055 (1.40) MAX

.200 (5.08
.160 (4.06)

5.08

.200
.125 (3.18

.400 (10.16

.370 (9.40

.065 (1.65
.045 (1.14

.020 (0.51
.016 (0.41

.020 (0.51) MIN

.040 (1.02
.020 (0.51

.150 (3.81

.015 (0.38
.008 (0.20

.320 (8.13
.290 (7.37

.400 (10.16

.320 (8.13

Dimensions: inches (mm)

DS21415B-page 10  2002 Microchip Technology Inc.

Package Dimensions (Continued)

.

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

C

-Pin SOI

TC426/TC427/TC428

.050 (1.27) TYP

.197 (5.00
.189 (4.80

.020 (0.51
.013 (0.33

.157 (3.99
.150 (3.81

.010 (0.25
.004 (0.10

.244 (6.20
.228 (5.79

.069 (1.75
.053 (1.35

.010 (0.25
.007 (0.18

.050 (1.27
.016 (0.40

Dimensions: inches (mm)

 2002 Microchip Technology Inc. DS21415B-page 11

TC426/TC427/TC428

NOTES:

DS21415B-page 12  2002 Microchip Technology Inc.

TC426/TC427/TC428

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom­mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: [phone]

3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2002 Microchip Technology Inc. DS21415B-page13

TC426/TC427/TC428

NOTES:

DS21415B-page14  2002 Microchip Technology Inc.

TC426/TC427/TC428

Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com­ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con­veyed, implicitly or otherwise, under any intellectual property
rights.

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The Microchip name and logo, the Microchip logo, FilterLab,

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K
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dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
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© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.

Printed on recycled paper.

Microchip received QS-9000 quality system
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The Company’s quality system processes and
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®

8-bit MCUs, KEELOQ

®

code hoppin g

 2002 Microchip Technology Inc. DS21415B-page 15

M

WORLDWIDE SALES AND SERVICE

AMERICAS

Corporate Office

2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: [phone] Fax: [phone]
Technical Support: 480-792-7627
Web Address: http://www.microchip.com

Rocky Mountain

2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: [phone] Fax: [phone]

Atlanta

500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: [phone] Fax: [phone]

Boston

2 Lan Drive, Suite 120
Westford, MA 01886
Tel: [phone] Fax: [phone]

Chicago

333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: [phone] Fax: [phone]

Dallas

4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: [phone] Fax: [phone]

Detroit

Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: [phone] Fax: [phone]

Kokomo

2767 S. Albright Road
Kokomo, Indiana 46902
Tel: [phone] Fax: [phone]

Los Angeles

18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: [phone] Fax: [phone]

New York

150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: [phone] Fax: [phone]

San Jose

Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: [phone] Fax: [phone]

Toronto

6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Cana da
Tel: [phone] Fax: [phone]

ASIA/PACIFIC

Australia

Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: [phone] Fax: [phone]

China - Beij ing

Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: [phone] Fax: [phone]

China - Chengdu

Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: [phone] Fax: [phone]

China - Fuzhou

Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Of fice
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: [phone] Fax: [phone]

China - Shanghai

Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: [phone] Fax: [phone]

China - Shenzhen

Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: [phone] Fax: [phone]

Hong Kong

Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: [phone] Fax: [phone]

India

Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: [phone] Fax: [phone]

Japan

Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-s hi
Kanagawa, 222-0033, Japan
Tel: [phone] Fax: [phone]

Korea

Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: [phone] Fax: [phone]

Singapore

Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: [phone] Fax: [phone]

Taiwan

Microchip Technology Taiwan
11F-3 , No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: [phone] Fax: [phone]

EUROPE

Denmark

Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: [phone] Fax: [phone]

France

Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: [phone] Fax: [phone]

Germany

Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: [phone] Fax: [phone]

Italy

Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: [phone] Fax: [phone]

United Kingdom

Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: [phone] Fax: [phone]

03/01/02

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DS21415B-page 16  2002 Microchip Technology Inc.