Microchip Technology TC1411NEOA, TC1411NCPA, TC1411NCOA, TC1411EPA, TC1411EOA Datasheet
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M
1A High-Speed MOSFET Drivers
TC1411/TC1411N
Features
• Latch-Up Protected: Will Withstand 500mA
Reverse Current
• Input Will Withstand Negative Inputs Up to 5V
• ESD Protected: 4kV
• High Peak Output Current: 1A
• Wide Operating Range
- 4.5V to 16V
• High Capacitive Load Drive Capability: 1000pF in
25nsec
• Short Delay Time: 30nsec Typ.
• Consistent Delay Times With Changes in Supply
Voltage
• Matched Delay Times
• Low Supply Current
- With Logic “1” Input: 500µA
- With Logic “0” Input: 100µA
• Low Output Impedance: 8Ω
• Pinout Same as TC1410/TC1412/TC1413
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Relay Driver
Device Selection Table
Part Number Package Temp. Range
TC1411COA 8-Pin SOIC 0°C to +70°C
TC1411CPA 8-Pin PDIP 0°C to +70°C
TC1411EOA 8-Pin SOIC -40°C to +85°C
TC1411EPA 8-Pin PDIP -40°C to +85°C
TC1411NCOA 8-Pin SOIC 0°C to +70°C
TC1411NCPA 8-Pin PDIP 0°C to +70°C
TC1411NEOA 8-Pin SOIC -40°C to +85°C
TC1411NEPA 8-Pin PDIP -40°C to +85°C
Package Type
8-Pin PDIP/SOIC
V
1
DD
IN
2
TC1411
NC
3
4
GND
2 6, 7
Inverting
NC = No internal connection
V
DD
78OUT
6
OUT
5
GND
V
DD
NC
GND
IN
1
2
TC1411N
3
4
2 6, 7
Noninverting
V
DD
78OUT
OUT
6
5
GND
General Description
The TC1411/TC1411N are 1A CMOS buffer/drivers.
They will not latch up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of current
of either polarity being forced back into their outp ut. Al l
terminals are fully protected against up to 4kV of
electrostatic discharge.
As MOSFET drivers, the TC1411/TC1411N can easily
charge a 1000pF gate capacitance in 25nsec with
matched rise and fall times, and provide low enough
impedance in both the ON and the OFF states to
ensure the MOSFET’s intended state will not be
affected, even by lar ge transients. The rise and fall time
edges are matched to allow driving short-duration
inputs with greater accuracy.
2002 Microchip Technology Inc. DS21390B-page 1
TC1411/TC1411N
Functional Block Diagram
Input
4.7V
GND
Effective
Input
C = 10pF
300mV
TC1411
Inverting
Outputs
Noninverting
Outputs
TC1411N
V
DD
Output
DS21390B-page 2 2002 Microchip Technology Inc.
TC1411/TC1411N
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage.....................................................+20V
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Voltage......................VDD + 0.3V to GND – 5.0V
Power Dissipation (T
≤ 70°C)
A
PDIP........................................................ 730mW
SOIC........................................................ 470mW
Package Thermal Resistance
PDIP R
PDIP R
SOIC R
SOIC R
..............................................125°C/W
θJ-A
............................................... 42°C/W
θJ-C
............................................ 155°C/W
θJ-A
.............................................. 45°C/W
θJ-C
Operating Temperature Range
C Version.........................................0°C to +70°C
E Version..................................... -40°C to +85°C
Storage Temperature Range ............. -65°C to +150°C
TC1411/TC1411N ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Over operating temperature range with 4.5V ≤ V
measured at T
Symbol Parameter Min Typ Max Units Test Conditions
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
I
REV
= +25°C, V
A
Logic 1, High Input Voltage 2.0 ——V
Logic 0, Low Input Voltage ——0.8 V
Input Current -1
High Output Voltage VDD – 0.025 ——V DC Tes t
Low Output Voltage ——0.025 V DC Test
Output Resistance — 8
Peak Output Current — 1.0 — AVDD = 16V
Latch-Up Protection
Withstand Reverse Current
DD
= 16V.
—
-10
— 0.5 — A Duty cycle ≤ 2%, t ≤ 300µsec,
—
10
10
≤ 16V, unless otherwise noted. Typical values are
DD
1
10
11
14
14
µA0V ≤ VIN ≤ V
-40°C
≤ TA ≤ +85°C
Ω V
= 16V, IO = 10mA, TA = +25°C,
DD
≤ TA ≤ +70°C
0°C
-40°C
≤ TA ≤ +85°C
V
= 16V
DD
DD, TA
= +25°C
2002 Microchip Technology Inc. DS21390B-page 3
TC1411/TC1411N
TC1411/TC1411N ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Over operating temperature range with 4.5V ≤ V
measured at T
= +25°C, V
A
DD
= 16V.
Symbol Parameter Min Typ Max Units Test Conditions
Switching Time (Note 1)
t
R
Rise Time — 25
27
29
t
F
Fall Time — 25
27
29
t
D1
Delay Time — 30
33
35
t
D2
Delay Time — 30
33
35
Power Supply
I
S
Note 1: Switching times ensured by design.
Power Supply Current —
—
0.5
0.1
≤ 16V, unless otherwise noted. Typical values are
DD
35
40
40
35
40
40
40
45
45
40
45
45
1.0
0.15
nsec TA = +25°C,
≤ TA ≤ +70°C
0°C
≤ TA ≤ +85°C, Figure 3-1
-40°C
nsec T
= +25°C,
A
≤ TA ≤ +70°C
0°C
≤ TA ≤ +85°C, Figure 3-1
-40°C
nsec TA = +25°C,
≤ TA ≤ +70°C
0°C
≤ TA ≤ +85°C, Figure 3-1
-40°C
nsec TA = +25°C,
≤ TA ≤ +70°C
0°C
≤ TA ≤ +85°C, Figure 3-1
-40°C
mA VIN = 3V, VDD = 16V
= 0V
V
IN
DS21390B-page 4 2002 Microchip Technology Inc.
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1: PIN FUNCTION TABLE
Pin No.
(8-Pin PDIP,
SOIC)
1V
2 INPUT Control input.
3 NC No connection.
4 GND Ground.
5 GND Ground.
6 OUTPUT CMOS totem-pole output, common to pin 7.
7 OUTPUT CMOS totem-pole output, common to pin 6.
8V
Symbol Description
DD
DD
Supply input, 4.5V to 16V.
Supply Input, 4.5V to 16V.
TC1411/TC1411N
2002 Microchip Technology Inc. DS21390B-page 5
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