Microchip Technology TC1411NEOA, TC1411NCPA, TC1411NCOA, TC1411EPA, TC1411EOA Datasheet

M

1A High-Speed MOSFET Drivers

TC1411/TC1411N

Features

• Latch-Up Protected: Will Withstand 500mA
Reverse Current

• Input Will Withstand Negative Inputs Up to 5V

• ESD Protected: 4kV

• High Peak Output Current: 1A

• Wide Operating Range

- 4.5V to 16V

• High Capacitive Load Drive Capability: 1000pF in
25nsec

• Short Delay Time: 30nsec Typ.

• Consistent Delay Times With Changes in Supply
Voltage

• Matched Delay Times

• Low Supply Current

- With Logic “1” Input: 500µA

- With Logic “0” Input: 100µA

• Low Output Impedance: 8Ω

• Pinout Same as TC1410/TC1412/TC1413

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Line Drivers

• Relay Driver

Device Selection Table

Part Number Package Temp. Range

TC1411COA 8-Pin SOIC 0°C to +70°C

TC1411CPA 8-Pin PDIP 0°C to +70°C

TC1411EOA 8-Pin SOIC -40°C to +85°C

TC1411EPA 8-Pin PDIP -40°C to +85°C

TC1411NCOA 8-Pin SOIC 0°C to +70°C

TC1411NCPA 8-Pin PDIP 0°C to +70°C

TC1411NEOA 8-Pin SOIC -40°C to +85°C

TC1411NEPA 8-Pin PDIP -40°C to +85°C

Package Type

8-Pin PDIP/SOIC

V

1

DD

IN

2

TC1411

NC

3

4

GND

2 6, 7

Inverting

NC = No internal connection

V

DD

78OUT

6

OUT

5

GND

V

DD

NC

GND

IN

1

2

TC1411N

3

4

2 6, 7

Noninverting

V

DD

78OUT

OUT

6

5

GND

General Description

The TC1411/TC1411N are 1A CMOS buffer/drivers.
They will not latch up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of current
of either polarity being forced back into their outp ut. Al l
terminals are fully protected against up to 4kV of
electrostatic discharge.

As MOSFET drivers, the TC1411/TC1411N can easily
charge a 1000pF gate capacitance in 25nsec with
matched rise and fall times, and provide low enough
impedance in both the ON and the OFF states to
ensure the MOSFET’s intended state will not be
affected, even by lar ge transients. The rise and fall time
edges are matched to allow driving short-duration
inputs with greater accuracy.

 2002 Microchip Technology Inc. DS21390B-page 1

TC1411/TC1411N

Functional Block Diagram

Input

4.7V

GND

Effective

Input

C = 10pF

300mV

TC1411

Inverting

Outputs

Noninverting

Outputs

TC1411N

V

DD

Output

DS21390B-page 2  2002 Microchip Technology Inc.

TC1411/TC1411N

1.0 ELECTRICAL
CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage.....................................................+20V

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.

Input Voltage......................VDD + 0.3V to GND – 5.0V

Power Dissipation (T

≤ 70°C)

A

PDIP........................................................ 730mW

SOIC........................................................ 470mW

Package Thermal Resistance
PDIP R
PDIP R
SOIC R
SOIC R

..............................................125°C/W

θJ-A

............................................... 42°C/W

θJ-C

............................................ 155°C/W

θJ-A

.............................................. 45°C/W

θJ-C

Operating Temperature Range

C Version.........................................0°C to +70°C

E Version..................................... -40°C to +85°C

Storage Temperature Range ............. -65°C to +150°C

TC1411/TC1411N ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Over operating temperature range with 4.5V ≤ V

measured at T

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

I

PK

I

REV

= +25°C, V

A

Logic 1, High Input Voltage 2.0 ——V
Logic 0, Low Input Voltage ——0.8 V
Input Current -1

High Output Voltage VDD – 0.025 ——V DC Tes t
Low Output Voltage ——0.025 V DC Test
Output Resistance — 8

Peak Output Current — 1.0 — AVDD = 16V
Latch-Up Protection

Withstand Reverse Current

DD

= 16V.

—

-10

— 0.5 — A Duty cycle ≤ 2%, t ≤ 300µsec,

—

10
10

≤ 16V, unless otherwise noted. Typical values are

DD

1

10

11
14
14

µA0V ≤ VIN ≤ V

-40°C

≤ TA ≤ +85°C

Ω V

= 16V, IO = 10mA, TA = +25°C,

DD

≤ TA ≤ +70°C

0°C

-40°C

≤ TA ≤ +85°C

V

= 16V

DD

DD, TA

= +25°C

 2002 Microchip Technology Inc. DS21390B-page 3

TC1411/TC1411N

TC1411/TC1411N ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: Over operating temperature range with 4.5V ≤ V

measured at T

= +25°C, V

A

DD

= 16V.

Symbol Parameter Min Typ Max Units Test Conditions

Switching Time (Note 1)

t

R

Rise Time — 25

27
29

t

F

Fall Time — 25

27
29

t

D1

Delay Time — 30

33
35

t

D2

Delay Time — 30

33
35

Power Supply

I

S

Note 1: Switching times ensured by design.

Power Supply Current —

—

0.5

0.1

≤ 16V, unless otherwise noted. Typical values are

DD

35
40
40

35
40
40

40
45
45

40
45
45

1.0

0.15

nsec TA = +25°C,

≤ TA ≤ +70°C

0°C

≤ TA ≤ +85°C, Figure 3-1

-40°C

nsec T

= +25°C,

A

≤ TA ≤ +70°C

0°C

≤ TA ≤ +85°C, Figure 3-1

-40°C

nsec TA = +25°C,

≤ TA ≤ +70°C

0°C

≤ TA ≤ +85°C, Figure 3-1

-40°C

nsec TA = +25°C,

≤ TA ≤ +70°C

0°C

≤ TA ≤ +85°C, Figure 3-1

-40°C

mA VIN = 3V, VDD = 16V

= 0V

V

IN

DS21390B-page 4  2002 Microchip Technology Inc.

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(8-Pin PDIP,

SOIC)

1V
2 INPUT Control input.
3 NC No connection.
4 GND Ground.
5 GND Ground.
6 OUTPUT CMOS totem-pole output, common to pin 7.
7 OUTPUT CMOS totem-pole output, common to pin 6.
8V

Symbol Description

DD

DD

Supply input, 4.5V to 16V.

Supply Input, 4.5V to 16V.

TC1411/TC1411N

 2002 Microchip Technology Inc. DS21390B-page 5

TC1411/TC1411N

3.0 APPLICATIONS INFORMATION

FIGURE 3-1: SWITCHING TIME TEST CIRCUIT

Input

2

Input: 100kHz,

square wave,

t

= t

RISE

= 16V

V

DD

1,8

TC1411

TC1411N

4,5

≤ 10nsec

FALL

4.7µF

6,7

0.1µF

Output

CL = 1000pF

+5V

Input

0V

V

Output

+5V

Input

0V

V

DD

Output

0V

DD

0V

10%

10%

t

D1

t

F

90%

10%

Inverting Driver

TC1411

90%

t

D1

t

10%

Noninverting Driver

TC1411N

90%

t

D2

t

R

90%

10%

90%

90%

t

R

D2

10%

t

F

DS21390B-page 6  2002 Microchip Technology Inc.

TC1411/TC1411N

4.0 TYPICAL CHARACTERISTICS

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are pro vided for information al purposes only. The performance characteristics lis ted herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

500

400

300

(µA)

200

SUPPLY

I

100

0

1.6

TA = 25°C

1.5

(V)

1.4

1.3

THRESHOLD

V

1.2

Quiescent Supply Current

vs. Supply Voltage

TA = 25°C

VIN = 3V

VDD (V)

Input Threshold vs. Supply Voltage

V

IH

V

IL

VIN = 0V

Quiescent Supply Current

vs. Temperature

500

400

300

(µA)

200

SUPPLY

I

100

16141210864

VIN = 3V

= 0V

V

IN

0

-40 -20 0 20 40 60 80

TEMPERATURE (°C)

V

SUPPLY

= 16V

Input Threshold vs. Temperature

1.6

V

= 16V

SUPPLY

1.5

(V)

1.4

1.3

THRESHOLD

V

1.2

V

IL

V

IH

1.1
4

25

20

15

10

Rds-on (Ohms)

5

0

V

(V)

DD

High-State Output Resistance

= 85°C

T

A

= 25°C

T

A

= -40°C

T

A

VDD (V)

1614121086

16141210864

1.1

-40

25

20

T

15

10

Rds-on (Ohms)

A

5

0

-20 0 20 40 60

TEMPERATURE (°C)

Low-State Output Resistance

= 85°C

= 25°C

T

A

= -40°C

T

A

VDD (V)

80

16141210864

 2002 Microchip Technology Inc. DS21390B-page 7

TC1411/TC1411N

TYPICAL CHARACTERISTICS (CONTINUED)

Rise Time vs. Supply Voltage

100

80

60

(nsec)

RISE

40

T

20

0

C

LOAD

= 1000pF

= 85°C

T

A

= 25°C

T

A

T

VDD (V)

= -40

A

°C

TD1 Propagation Delay vs. Supply Voltage

100

(nsec)

D1

T

80

60

40

20

C

LOAD

= 1000pF

= -40°C

T

A

T

A

= 85°C

T

= 25°C

A

Fall Time vs. Supply Voltage

100

80

60

(nsec)

40

FALL

T

20

16141210864

0

C

LOAD

= 1000pF

= 85°C

T

A

= 25°C

T

A

VDD (V)

T

A

= -40°C

16141210864

TD2 Propagation Delay vs. Supply Voltage

100

80

60

(nsec)

D2

40

T

20

C

LOAD

= 1000pF

= 85°C

T

A

T

A

= 25°C

T

= -40

A

°C

0

VDD (V)

Rise and Fall Times vs. Capacitive Load

100

= 25°C

T

A

= 16V

V

DD

80

60

(nsec)

FALL

, T

40

RISE

T

20

0

0 500 1000 1500 2000 2500 3000 3500

C

(pF)

LOAD

T

RISE

T

FALL

16141210864

0

VDD (V)

16141210864

Propagation Delays vs. Capacitive Load

36

= 25°C

T

A

= 16V

V

DD

34

32

30

28

Propagation Delays (nsec)

26

0 500 1000 1500 2000 2500 3000 3500

C

(pF)

LOAD

T

D2

T

D1

DS21390B-page 8  2002 Microchip Technology Inc.

TYPICAL CHARACTERISTICS (CONTINUED)

00

0

00

600

800

000

00

00

600

01020

30405060708090100110120

)

8

P

s

8

C

TC1411/TC1411N

1

14

12

1

-Pin SOI

MAX. POWER (mW)

4

2

Thermal Derating Curve

-Pin DI

AMBIENT TEMPERATURE (C

 2002 Microchip Technology Inc. DS21390B-page 9

TC1411/TC1411N

3

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

8-Pi

P

.

8

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

C

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

Package mar k ing data not available at this time.

5.2 Package Dimensions

n Plastic DI

.260 (6.60
.240 (6.10

.045 (1.14
.030 (0.76

.200 (5.08
.140 (3.56

.150 (3.81
.115 (2.92

-Pin SOI

.400 (10.16

.348 (8.84

.110 (2.79
.090 (2.29

.157 (3.99
.150 (3.81

.070 (1.78
.040 (1.02

.022 (0.56
.015 (0.38

.244 (6.20
.228 (5.79

.040 (1.02
.020 (0.51

.310 (7.87
.290 (7.37

.015 (0.38
.008 (0.20

.400 (10.16

.310 (7.87

Dimensions: inches (mm)

.050 (1.27) TYP

.197 (5.00
.189 (4.80

.069 (1.75
.053 (1.35

.020 (0.51
.013 (0.33

DS21390B-page 10  2002 Microchip Technology Inc.

.010 (0.25
.004 (0.10

.050 (1.27
.016 (0.40

Dimensions: inches (mm)

.010 (0.25
.007 (0.18

TC1411/TC1411N

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom­mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: [phone]

3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2002 Microchip Technology Inc. DS21390B-page11

TC1411/TC1411N

NOTES:

DS21390B-page12  2002 Microchip Technology Inc.

TC1411/TC1411N

Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com­ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con­veyed, implicitly or otherwise, under any intellectual property
rights.

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The Microchip name and logo, the Microchip logo, FilterLab,

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Serialized Quick Turn Programming (SQTP) is a service mark
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All other trademarks mentioned herein are property of their
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© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.

Printed on recycled paper.

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The Company’s quality system processes and
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®

8-bit MCUs, KEELOQ

®

code hoppin g

 2002 Microchip Technology Inc. DS21390B-page 13

M

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' &'

DS21390B-page 14  2002 Microchip Technology Inc.