Microchip Technology TC1186-5.0VCT, TC1186-3.6VCT, TC1186-3.3VCT, TC1186-3.0VCT, TC1186-2.8VCT Datasheet

TC1054/TC1055/TC1186

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

Features

• Extremely Low Ground Current forLonger
Battery Life

• Very Low Dropout Voltage

• Choice of 50mA (TC1054),100mA (TC1055)and
150mA (TC1186) Output

• High Output Voltage Accuracy

• Standard or Custom Output Voltages

• Power-Saving Shutdown Mode

• ERROR
Detector, or Processor Reset Generator

• Over Current and O ver Temperature Protection

• Space-Saving 5-Pin SOT-23A Package

• Pin Compatible Upgrades for Bipolar Regulators

Output Can Be Used as a Low Battery

Applications

• Battery Operated Systems

• PortableComputers

• Medical Instruments

• Instrumentation

• Cellular/GSM/PHSPhones

• Linear Post-Regulators for SMPS

• Pagers

Device Selection Table

Part Number Package

TC1054-xxVCT 5-Pin SOT-23A -40°C to +125°C
TC1055-xxVCT 5-Pin SOT-23A -40°C to +125°C
TC1186-xxVCT 5-Pin SOT-23A -40°C to +125°C

NOTE: xx indicates outputvoltages
Available Output Voltages: 1.8, 2.5, 2.7, 2.8, 2.85, 3.0, 3.3,

3.6, 4.0, 5.0.
Other output voltages are available. Please contact Microchip

T echnology Inc. for details.

Junction

Temp. Range

Package Type

5-Pin SOT-23A

V

OUT

5

ERROR

4

TC1054
TC1055
TC1186

13

2

V

IN

NOTE: 5-Pin SOT-23A is equivalentto the EIAJ (SC-74A)



2002 Microchip TechnologyInc. DS21350B-page 1

GND

SHDN

TC1054/TC1055/TC1186

General Description

The TC1054, TC1055 and TC1186 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
low dropout regulators. Designed specifically for
battery-operated systems, the devices’ CMOS
construction eliminates wasted ground current,
significantly extending battery life. Total supply current
is typically 50µA at full load (20 to 60 times lower than
in bipolar regulators).

The devices’ key features include ultra low noise
operation, very l ow dropout voltage – typically 85mV
(TC1054); 180mV (TC1055); and 270mV (TC1186) at
full l oad — and fast response to step changes in load.
An error output (ERROR
are out-of-regulation (due to a low input voltage or
excessive output current). ERROR
low battery war ning or as a processor RESET
(with the addition of an external RC network). Supply
current is reduced to 0.5µA (max) and both V
ERROR

are disabled when the shutdown input is low.
The devices i ncorporate both over-temperature and
over-current protection.

The TC1054, TC1055 and TC1186 are stable with an
output capacitor of only 1µF and have a maximum
output current of 50mA, 100mA and 150mA,
respectively. For higher output current regulators,
please see the TC1173 (I

) is asserted when thedevices

canbeusedasa

signal

and

OUT

= 300mA) data sheet.

OUT

Typical Application

V

IN

(from Power Control Logic)

1

V

IN

2

GND

3

SHDN

Shutdown Control

TC1054
TC1055
TC1186

V

OUT

ERROR

5

4

V

OUT

+

1µF

ERROR

DS21350B-page 2



2002 Microchip TechnologyInc.

TC1054/TC1055/TC1186

1.0 ELECTRICAL
CHARACTERISTICS

Absolute Maximum Ratings*

Input Voltage......................................................... 6.5V

Output Voltage...........................(-0.3V) to (V

+0.3V)

IN

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanentdamage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.

Power Dissipation............... Internally Limited (Note 6)

Maximum Voltage on Any Pin ........ V

OperatingTemperature Range...... -40°C < T

+0.3V to -0.3V

IN

< 125°C

J

Storage Temperature. ........................ -65°C to +150°C

TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: VIN=V

type specifications apply for junction temperatures of -40°C to +125°C.

Symbol Parameter Min Typ Max Units Test Conditions

V

IN

I

OUTMAX

V

OUT

TCV

OUT

/∆VINLine Regulation — 0.05 0.35 %(VR+1V)≤ VIN ≤ 6V

∆V

OUT

∆V

OUT/VOUT

V

IN-VOUT

I

IN

I

INSD

Input OperatingVoltage 2.7 — 6.0 V Note 8
Maximum Output Current 50

Output Voltage VR–2.5% VR±0.5% VR+2.5% V Note 1
V

T emperature Coefficient —

OUT

Load Regulation TC1054; TC1055

Dropout Voltage

Supply Curre nt — 50 80 µA SHDN =VIH,IL=0

Shutdown Supply Current — 0.05 0.5 µA SHDN =0V
PSRR Power Supply Rejection Ratio — 64 — dB F
I

OUTSC

/∆PDThermal Regulation — 0.04 — V/W Notes 5, 6

∆V

OUT

T

SD

∆T

SD

Output Short Circuit Current — 300 450 mA V

Thermal Shutdown Die Temperature — 160 — °C

Thermal Shutdown Hysteresis — 10 — °C
eN Output Noise — 260 — nV/√Hz

Note 1: VRis the regulator output voltage setting. For example: VR= 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V,3.6V, 4.0V, 5.0V.

2:

TC V

=(V

OUT

OUTMAX–VOUTMIN

V

3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or

line regulation effects. Specifications are for a current pulse equal to I

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., T
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.

7: Hysteresis voltage is referenced by V
8: Them inimum V

OUT

has to justify the conditions: VIN≥ VR+V

IN

+1V,IL=100µA, CL=3.3µF, SHD N >VIH,TA= 25°C, unless otherwise noted. Boldface

OUT

mA TC1054

TC1055
TC1186

ppm/°C Note 2

%IL= 0.1mA to I

IL= 0.1mA to I

TC1186

100
150

—

—
—

—
—
—

20

40

0.5

0.5

—
—
—

—
—

2
3

(Note 3)

mV I

=100µA

L

I

=20mA

L

I

=50mA

L

I

=100mA

L

I

=150mA(Note 4)

L

≤ 1kHz

RE

=0V

OUT

IL=I

OUTMAX

.

OUTMAX

TC1055; TC1186
TC1186

6

)x 10

x ∆T

—
—
—
—
—

, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate

A,TJ

.

R

2
65
85

180
270

LMAX

andVIN≥ 2.7V for IL=0.1mAtoI

DROPOUT

—
—

120
250
400

at VIN= 6V for T = 10 msec.

OUTMAX
OUTMAX



2002 Microchip TechnologyInc. DS21350B-page 3

TC1054/TC1055/TC1186

TC1054/TC1055/TC1186 ELECTRICAL SPECI FICATIONS (CONTINUED)

Electrical Characteristics: VIN=V

type specifications apply for junctiontemperaturesof -40°C to +125°C.

+1V,IL=100µA, CL=3.3µF, SHDN >VIH,TA= 25°C, unless otherwise noted. Boldface

OUT

Symbol Parameter Min Typ Max Units Test Conditions

SHDN

Input

V

IH

V

IL

ERROR

V

INMIN

V

OL

V

TH

V

HYS

Note 1: VRis the regulator output voltage setting. For example: VR= 1.8V, 2.5V , 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

SHDN Input High Threshold 45 — — %VINVIN=2.5Vto6.5V
SHDN Input Low Threshold — — 15 %VINVIN=2.5Vto6.5V

Output

Minimum VIN Operating Voltage 1.0 — — V

Output Logic Low Voltage

ERROR ThresholdVoltage — 0.95 x V

— — 400 mV 1 mA Flows to ERROR

— V SeeFigure3-2

R

ERROR Positive Hysteresis — 50 — mV Note 7

2:

TC V

=(V

OUT

OUTMAX–VOUTMIN

V

x ∆T

3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or

line regulation effects. Specifications are for a current pulse equal to I

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., T
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.

7: Hysteresis voltage is referenced by V
8: Theminimum V

OUT

has to justify the conditions: VIN≥ VR+V

IN

)x 10

6

at VIN= 6V for T = 10 msec.

LMAX

, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate

A,TJ

.

R

and VIN≥ 2.7V for IL= 0.1mA to I

DROPOUT

OUTMAX

.

DS21350B-page 4



2002 Microchip TechnologyInc.

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1.

TABLE 2-1: PIN FUNCTION TABLE

TC1054/TC1055/TC1186

Pin No.

(5-Pin SOT-23A)

1V
2 GND Ground terminal.
3 SHDN

4 ERROR

5V

Symbol Description

IN

OUT

Unregulated supply input.

Shutdown control input. The regulator is fully enabled when a logic high is applied to this
input. The regulator entersshutdown when a logic low is applied to this input.During
shutdown, outputvoltage falls to zero, ERROR
reducedto0.5µA(max).

Out-of-Regulation Flag.(Open drain output).This output goes low when V
tolerance by approximately – 5%.

Regulated voltage output.

is open circuited and supply current is

is out-of-

OUT



2002 Microchip TechnologyInc. DS21350B-page 5

TC1054/TC1055/TC1186

3.0 DETAILED DESCRIPTION

The TC1054, TC1055 and TC1186 are precision fixed
output voltage regulators. (If an adjustable version is
desired, please see the TC1070/TC1071/TC1187 data
sheet.) Unlike bipolar regulators, the TC1054, TC1055
and TC1186supplycurrentdoesnot increasewith load
current. In addition, V
regulation over the entire 0mA to I
load current range, (an important consideration in RTC
and CMOS RAM battery back-up applications).

Figure 3-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN

)isatoraboveVIH, and shutdown (disabled)

when SHDN

is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05µA
(typical), V

fallsto zero volts, and ERROR is open-

OUT

circuited.

FIGURE 3-1: TYPICAL APPLICATION

+

1µF

+

Battery

Shutdown Control

(to CMOS Logic or Tie

to V

if unused)

IN

if ERROR is used as a

Processor RESET Signal

remains stable and within

OUT

OUTMAX

input is not required, it

CIRCUIT

TC1054
TC1055
TC1186

(See Text)

V

OUT

ERROR

V+

V

IN

GND

SHDN

C2 Required Only

+

R1
1M

1µF
C1

0.2µF
C2

operating

V

OUT

BATTLOW
or RESET

3.1 ERROR Open Drain Output

ERROR is driven low whenever V
regulation by more than – 5% ( typical). This condition
may be caused by low input voltage, output current
limiting, or thermal limiting. The ERRO R
5% below rated V
outputvoltagevalue(e.g.ERROR

regardless of t he programmed

OUT

=VOLat 4.75V (typ.)
for a 5. 0V regulator and 2.85V (typ.) for a 3.0V
regulator). ERROR

output operation is shown in

Figure 3-2.
Note that ERROR

inactive when V

isactivewhen V

rises above VTHby V

OUT

OUT

As shown in Figure 3-1, ERROR
battery low flag, or as a processor RESET
the addition of timing capacitor C2). R1 x C2 should be
chosen to maintain ERROR
RESET

inputfor at least 200 msec to allow time for the

below VIHof the processor

system to stabilize. Pull-up resistor R1 can be tied to
V

OUT,VIN

or any other voltageless than (VIN+0.3V).

FIGURE 3-2: ERROR OUTPUT

OPERATION

V

OUT

V

TH

ERROR

V

IH

V

OL

falls out of

OUT

threshold is

fallsto VTH, and

.

HYS

canbeusedasa

signal (with

HYSTERESIS (VH)

3.2 Output Capacitor

A1µF(min)capacitorfromV
recommended. The output capacitor should have an
effective s eries resistance greater than 0.1Ω and less
than 5.0Ω, and a resonant frequency above 1MHz. A
1µF capacitor should be connected from V
there i s more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used. (Since many
aluminum electrolytic capacitors freeze at approxi­mately -30°C, solid tantalums are recommended for
applications operating below -25°C.) When operating
from sources other than batteries, supply-noise
rejection and transient response can be improved by
increasing the value of the input and output capacitors
and employing passive filtering techniques.

to ground is

OUT

to GND if

IN

DS21350B-page 6



2002 Microchip TechnologyInc.

TC1054/TC1055/TC1186

4.0 THERMAL CONSIDERATIONS

4.1 Thermal Shutdown

Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.

4.2 Power Dissipation

The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:

EQUATION 4-1:

≈ (V

P

D

INMAX–VOUTMIN)ILOADMAX

Where:

= Worst case actual power dissipation

P

D

= Maximum voltage on V

V

INMAX

V

I

LOADMAX

= Mi nimum regulator output voltage

OUTMIN

= Maximum output ( load) current

The maximum al lowable power dissipation
(Equation 4-2) is a function of the maximum ambient
temperature (T
temperature (T
junction-to-air (θ
a θ

of approximately 220°C/Watt.

JA

), the maximum allowable die

AMAX

) and the t hermal resistance from

JMAX

). The 5-Pin SOT-23A package has

JA

IN

Equation 4-1 can be used in conjunction with
Equation 4-2 to ensure regulator thermal operation i s
within limits. For example:

Given:

V

INMAX

V

OUTMIN

I

LOADMAX

T

JMAX

T

AMAX

=3.0V±5%
=2.7V–2.5%
=40mA
= 125°C
=55°C

Find: 1. Actual power dissipation

2. Maximum allowable dissipation
Actual power dissipation:
P

D ≈ (V

INMAX–VOUTMIN)ILOADMAX

= [ (3.0 x 1.05) – (2.7 x .975)]40 x 10

–3

= 20.7mW

Maximum allowable power dissipation:

P

DMAX

=(T

JMAX–TAMAX

θ

)

JA

= (125 – 55)

220

=318mW

In this example, the TC1054 dissipates a maximum of

20.7mW; below the allowable limit of 318mW. In a
similar manner, Equation 4-1 and Equation 4-2 can be
used to calculate maximum current and/or input
voltage limits.

EQUATION 4-2:

P

Where all terms are previously defined.

DMAX

=(T

JMAX–TAMAX

4.3 Layout Considerations

)

θ

JA

The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wi de traces at the pads, and wide power
supply bus lines combine to lower θ

and therefore,

JA

increase the maximum allowable power dissipation
limit.



2002 Microchip TechnologyInc. DS21350B-page 7

TC1054/TC1055/TC1186

5.0 TYPICAL CHARACTERISTICS

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samplesandareprovidedforinformational purposesonly.Theperformancecharacteristicslistedhereinare
not tested or guaranteed. In some graphs or tables, the data presented may be outsidethe specified
operating range ( e.g., outside specified power supply range) and therefore outside the warranted range.

0.020

0.018

0.016

0.014

0.012

0.010

0.008

0.006

0.004

DROPOUT VOLTAGE (V)

0.002

0.000

0.200

0.180

Dropout Voltage vs. Temperature

I

= 10mA

LOAD

C

= 1µF

IN

C

= 1µF

OUT

-40 -20 0 20 50 70 12 5

Dropout Voltage vs. Temperature

I

= 100mA

LOAD

0.160

0.140

0.120

0.100

0.080

0.060

0.040

DROPOUT VOLTAGE (V)

C

= 1µF

0.020

0.000

IN

C

= 1µF

OUT

-40 -20 0 20 50 70 125

TEMPERATURE (°C)

TEMPERATURE (°C)

(V

OUT

= 3.3V)

0.100

0.090

Dropout Voltage vs. Temperature

I

= 50mA

LOAD

(V

= 3.3V)

OUT

0.080

0.070

0.060

0.050

0.040

0.030

0.020

DROPOUT VOLTAGE (V)

C

= 1µF

0.010

0.000

IN

C

= 1µF

OUT

-40 -20 0 20 50 70 125

TEMPERATURE (°C)

(V

= 3.3V)

OUT

0.300

0.250

0.200

0.150

0.100

0.050

DROPOUT VOLTAGE (V)

0.000

Dropout Voltage vs. Temperature

I

= 150mA

LOAD

C

= 1µF

IN

= 1µF

C

OUT

-40 -20 0 20 50 70 125

TEMPERATURE (°C)

(V

= 3.3V)

OUT

90

80

70

A)

µ

60

50

40

30

20

GND CURRENT (

10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5

DS21350B-page 8

Ground Current vs. V

V

(V)

IN

(V

= 3.3V)

IN

OUT

I

LOAD

C

IN

C

OUT

= 10mA

= 1µF

= 1µF

90

80

70

A)

µ

60

50

40

30

GND CURRENT (

20

10

0

Ground Current vs. V

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5



(V

= 3.3V)

IN

OUT

I

= 100mA

LOAD

C

= 1µF

IN

= 1µF

C

OUT

(V)

V

IN

2002 Microchip TechnologyInc.

TC1054/TC1055/TC1186

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)

80

70

Ground Current vs. VIN (V

I

= 150mA

LOAD

60

50

40

30

20

GND CURRENT (µA)

10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5

V

(V)

IN

OUT

= 3.3V)

C
C

IN
OUT

= 1µF

= 1µF

(V)

OUT

V

3.5

3

2.5

2

1.5

1

0.5

0

V

vs.

V

(V

IN

VIN (V)

OUT

= 3.3V)

C

= 1µF

IN

C

= 1µF

OUT

OUT

I

= 0

LOAD

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7

V

vs.

V

(V

IN

VIN (V)

OUT

= 3.3V)

3.5
I

LOAD

3.0

2.5

2.0

(V)

OUT

1.5

V

1.0

0.5

0.0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7

3.290

I

LOAD

3.288

3.286

3.284

(V)

3.282

OUT

V

3.280

3.278

C

IN

C

3.276

3.274

OUT

V

IN

-40 -20 -10 0 20 40 85 125

OUT

= 100mA

Output Voltage vs. Temperature (V

= 150mA

= 1µF

= 1µF

= 4.3V

TEMPERATURE (°C)

C
C

OUT

= 1µF

IN
OUT

= 3.3V)

= 1µF

3.320

3.315

Output Voltage vs. Temperature (V

I

= 10mA

LOAD

3.310

3.305

3.300

(V)

3.295

OUT

V

3.290

3.285

C

= 1µF

IN

C

= 1µF

V

OUT

= 4.3V

IN

3.280

3.275

-40 -20 -10 0 20 40 85 12 5

TEMPERATURE (°C)

OUT

= 3.3V)



2002 Microchip TechnologyInc. DS21350B-page 9

TC1054/TC1055/TC1186

Stable Region

S

n

K

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)

Output Voltage vs. Temperature

I

= 10mA

LOAD

V

= 6V

IN

= 1µF

C

IN

C

= 1µF

OUT

-40 -20 -10 0 20 40 85 12 5

Temperature

I

= 10mA

LOAD

TEMPERATURE (°C)

vs. Quiescent Current

(V)

V

OUT

A)

µ

5.025

5.020

5.015

5.010

5.005

5.000

4.995

4.990

4.985

70

60

50

40

30

20

GND CURRENT (

V

= 6V

IN

10

= 1µF

C

IN

= 1µF

C

OUT

0

-40 -20 -10 0 20 40 85 125

TEMPERATURE (°C)

(V

(V

OUT

OUT

= 5V)

= 5V)

4.994

4.992

4.990

4.988

4.986

(V)

4.984

OUT

4.982

V

4.980

4.978

4.976

4.974

80

70

A)

60

µ

50

40

30

20

GND CURRENT (

10

0

Output Voltage vs. Temperature

I

= 150mA

LOAD

V

= 6V

IN

C

= 1µF

IN

C

= 1µF

OUT

-40 -20 -10 0 20 40 85 125

Temperature vs. Quiescent Current (V

I

= 150mA

LOAD

V

= 6V

IN

C

= 1µF

IN

= 1µF

C

OUT

-40 -20 -10 0 20 40 85 125

TEMPERATURE (°C)

TEMPERATURE (°C)

(V

= 5V)

OUT

= 5V)

OUT

NOISE (µV/√Hz)

10.0

1.0

Output Noise vs. Frequency

0.1

0.0

0.01K

0.1K
FREQUENCY (Hz)

R

LOAD

= 1µF

C

OUT

= 1µF

C

IN

1K 10K 100K

= 50Ω

1000K

Stability Region vs. Load Current

1000

100

(Ω)

10

ESR

OUT

C

table Regio

1

0.1

0.01
10

203040

0

LOAD CURRENT (mA)

C

= 1µF

OUT

to 10µF

50 60 70 80 90 100

Power Supply Rejection Ratio

-30
I

10mA

OUT =

-35

-40

-45

-50

= 4V

V

IN

DC

= 100mV

V

IN

AC

= 3V

V

OUT

= 0

C

IN

= 1µF

C

OUT

-55

-60

PSRR (dB)

-65

-70

-75

-80

0.1K

0.01K
FREQUENCY (Hz)

p-p

1K 10K

100K

1000

DS21350B-page 10



2002 Microchip TechnologyInc.

TC1054/TC1055/TC1186

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

Conditions: C

VSHDN

VOUT

Conditions: C

VSHDN

Measure Rise Time of 3.3V LDO

= 1µF, C

IN

Temp = 25

Measure Rise Time of 5.0V LDO

= 1µF, C

IN

Temp = 25

= 1µF, I

OUT

°C, Fall Time = 184µS

= 1µF, I

OUT

°C, Fall Time = 192µS

= 100mA, VIN = 4.3V,

LOAD

= 100mA, VIN = 6V,

LOAD

Conditions: C

VSHDN

VOUT

Conditions: C

VSHDN

Measure Fall Time of 3.3V LDO

= 1µF, C

IN

Temp = 25

= 1µF, I

OUT

°C, Fall Time = 52µS

LOAD

= 100mA, VIN = 4.3V,

Measure Fall Time of 5.0V LDO

= 1µF, C

IN

Temp = 25

= 1µF, I

OUT

°C, Fall Time = 88µS

LOAD

= 100mA, VIN = 6V,

VOUT

Thermal Shutdown Response of 5.0V LDO

Conditions: V

VOUT

I

was increased until temperature of die reached about 160°C, at

LOAD

which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.

= 6V, CIN = 0µF, C

IN

OUT

= 1µF

VOUT



2002 Microchip TechnologyInc. DS21350B-page 11

TC1054/TC1055/TC1186

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

“1” & “2” = part number code + temperature range and

voltage

(V)

1.8 CY DY PY

2.5 C1 D1 P1

2.7 C2 D2 P2

2.8 CZ DZ PZ

2.85 C8 D8 P8

3.0 C3 D3 P3

3.3 C5 D5 P5

3.6 C9 D9 P9

4.0 C0 D0 P0

5.0 C7 D7 P7

“3” represents year and quarter code
“4” represents l ot ID number

TC1054

Code

TC1055

Code

6.2 Taping Form

Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices

TC1186

Code

User Direction of Feed

DS21350B-page 12

Device

Marking

W

PIN 1

Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)

Carrier Tape, Number of Components Per Reel and Reel Size

Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size

5-Pin SOT-23A 8 mm 4 mm 3000 7 in

P



2002 Microchip TechnologyInc.

6.3 Package Dimensions

SOT-23A-5

TC1054/TC1055/TC1186

.075 (1.90)

REF.

.122 (3.10)
.098 (2.50)

.020 (0.50)
.012 (0.30)

.057 (1.45)
.035 (0.90)

PIN 1

.006 (0.15)
.000 (0.00)

.122 (3.10)
.106 (2.70)

.071 (1.80)
.059 (1.50)

.037 (0.95)

REF.

10° MAX.

.010 (0.25)
.004 (0.09)

.024 (0.60)
.004 (0.10)

Dimensions: inches (mm)



2002 Microchip TechnologyInc. DS21350B-page 13

TC1054/TC1055/TC1186

NOTES:

DS21350B-page 14



2002 Microchip TechnologyInc.

TC1054/TC1055/TC1186

SALES AND SUPPORT

Data Sheets

Products supportedby a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom­mendedworkarounds.To determine if an errata sheet exists for a particulardevice, please contactoneof the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature CenterU.S.FAX: [phone]

3. The Microchip Worldwide Site (www.microchip.com)
Pleasespecify which device, revision of silicon and Data Sheet (includeLiterature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2002 Microchip Technology Inc. DS21350B-page 15

TC1054/TC1055/TC1186

NOTES:

DS21350B-page 16  2002 Microchip Technology Inc.

TC1054/TC1055/TC1186

Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com­ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con­veyed, implicitly or otherwise, under any intellectual property
rights.

Trademarks

The Microchip name and logo, the Microchip logo, FilterLab,
K

EELOQ,microID,MPLAB,PIC,PICmicro,PICMASTER,

PICSTART, PRO MATE, SEEVAL and The Embedded Control
SolutionsCompany areregiste red trademarksof MicrochipTech­nologyIncorp or ated in the U.S.A. and other countries .

dsPIC, ECONOMONITOR, FanSense, Fle xR OM , fuzz yLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV,MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
TechnologyIncorporated in the U.S.A.

Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip TechnologyIncorporated in t he U.S.A.

All other trademarks mentioned herein are property of their
respective companies.

© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserve d.

Printed on recycled paper.

Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View,California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its

®

PICmicro
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systemsisISO 9001certified.



2002 Microchip TechnologyInc. DS21350B-page 17

8-bit MCUs, KEELOQ®code hopping

WORLDWIDE SALES AND SERVICE

AMERICAS

Corporate Office

2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: [phone] Fax: [phone]
Technical Support: 480-792-7627
Web Address: http://www.microchip.com

Rocky Mountain

2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: [phone] Fax: [phone]

Atlanta

500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: [phone] Fax: [phone]

Boston

2 Lan Drive, Suite 120
Westford, MA 01886
Tel: [phone] Fax: [phone]

Chicago

333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: [phone] Fax: [phone]

Dallas

4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: [phone] Fax: [phone]

Detroit

Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: [phone] Fax: [phone]

Kokomo

2767 S. Albright Road
Kokomo, Indiana 46902
Tel: [phone] Fax: [phone]

Los Angeles

18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: [phone] Fax: [phone]

New York

150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: [phone] Fax: [phone]

San Jose

Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: [phone] Fax: [phone]

Toronto

6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: [phone] Fax: [phone]

ASIA/PACIFIC

Australia

Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: [phone] Fax: [phone]

China - Beijing

Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: [phone] Fax: [phone]

China - Chengdu

Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: [phone] Fax: [phone]

China - Fuzhou

Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: [phone] Fax: [phone]

China - Shanghai

Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: [phone] Fax: [phone]

China - Shenzhen

Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F , Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: [phone] Fax: [phone]

China - Hong K ong SAR

Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: [phone] Fax: [phone]

India

Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: [phone] Fax: [phone]

Japan

Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: [phone] Fax: [phone]

Korea

Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: [phone] Fax: [phone]

Singapore

Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: [phone] Fax: [phone]

Taiwan

Microchip Technology Taiwan
11F-3, No. 207
Tung HuaNorth Road
Taipei, 105, Taiwan
Tel: [phone] Fax: [phone]

EUROPE

Denmark

Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: [phone] Fax: [phone]

France

Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: [phone] Fax: [phone]

Germany

Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: [phone] Fax: [phone]

Italy

Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: [phone] Fax: [phone]

United Kingdom

Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, EnglandRG41 5TU
Tel: [phone] Fax: [phone]

05/01/02

DS21350B-page 18

*DS21350B*



2002 Microchip Technology Inc.