Microchip Technology MCP1630V, MCP1630 User Manual

MCP1630/MCP1630V

High-Speed, Microcontroller-Adaptable,

Pulse Width Modulator

Features

• High-S pe ed PWM Op era tion (12ns Current
Sense to Output Delay)

• Operating Temperature Range:

- -40°C to +125°C

• Precise Peak Current Limit (±5%) (MCP1630)

• Volt age M ode an d A ver age Curren t Mode Contro l
(MCP1630V)

• CMOS Output Driver (drives MOSFET driver or
low-side N-channel MOSFET directly)

• External Oscillator Input
(from PICmicro

®

Microcontroller (MCU))

• External Voltage Reference Input (for adjustable
voltage or current out put app lic at ion )

• Peak Current Mode Operation > 1 MHz

• Low Operating Current: 2.8 mA (typ.)

• Fast Output Rise and Fall Times: 5.9 ns and

6.2 ns

• Undervoltage Lockout (UVLO) Protection

• Output Short Circuit Protection

• Overtemperature Protection

Applications

• Intelligent Power Systems

• Smart Battery Charger Applications

• Multiple Output/Multiple Phase Converters

• Output V oltage Calibration

• AC Power Factor Correction

• VID Capability (programmed and cal ibrated by
PICmicro

• Buck/Boost/Buck-Boost/SEPIC/Flyback/Isolated
Converters

• Parallel Power Supplies

®

microcontroller)

Description

The MCP1630/V is a high-speed Pulse Width Modula­tor (PWM ) used t o devel op int ellige nt power syst ems.
When used with a microcontroller unit (MCU), the
MCP1630/V will control the pow er system dut y cycle to
provide output voltage or current regulation. The MCU
can be used to ad just o utput v olt age o r curren t, switc h­ing frequency, maximum duty cycle and other features
that make the power system more intelligent.

Typical applications include smart battery chargers,
intelligent power systems, brick dc/dc converters, ac
power-factor correction, multiple output power supplies,
multi-phase power supplies and more.

The MCP1630/V inputs were developed to be easily
attached to the I/O of a MCU. The MC U supplies the
oscillator and reference to the MCP1630/V to provide
the most flexible and adaptable power system. The
power system switching frequency and maximum duty
cycle are set using the I/O of the MCU. The reference
input can be external, a D/A Converter (DAC) output or
as simple as an I/ O ou tput fro m the MCU . This enab les
the power system to adapt to many external signals
and variables in order to optimize performance and
facilitate calib rati on.

When operating in Current mode, a precise limit is set
on the peak current. With the fast comparator speed
(typically 12 ns), the MCP1630 is capable of providing a
tight limit on the maximum switch current over a wide
input voltage range when compared to other high-speed
PWM controllers.

For Voltage mode or Average Current mode
applications, the MCP1630V provides a larger range for
the external ramp voltage.

Additional protection features include: UVLO,
overtemperature and overcurrent.

Related Literature

Package Type

• “MCP1630 NiMH Demo Board User’s Guide”,
Microchip Technology Inc., DS51505, 2004

• “MCP1630 Low-Cost Li- Ion Battery Charger
User’s Guide”, Microchip Technology Inc.,
DS51555, 2005

• “MCP1630 Li-Ion Multi-Bay Battery Charger
User’s Guide”, Microchip Technology Inc.,
DS51515, 2005

8-Lead DFN

(2 mm x 3 mm)

COMP

1

FB

2

CS

3

OSC IN

4

8
7
6
5

V

REF

V

IN

V

EXT

GND

COMP

FB

CS

OSC IN

8-Lead MSOP

1
2
3
4

V

8

REF

7

V

IN

6

V

EXT

5

GND

• “MCP1630 Dual Buck Demo Board User’s Guide”,
Microchip Technology Inc., DS51531, 2005

© 2005 Microchip Technology Inc. DS21896B-page 1

MCP1630/MCP1630V

Functional Block Diagram – MCP1630

MCP1630 High-Speed PWM

V

IN

Overtemperature

V

IN

0.1 µA

OSC IN

V

IN

0.1 µA
CS
COMP

V

IN

FB

–

REF

EA

+

2R

2.7V Clamp

V

Note: During overtemperat ure, V

S

+
Comp

–

EXT

R

R

driver is high-impedance.

UVLO

Note

Q

Q

Latch Truth Table

SRQ

00Qn
011
100
111

V

EXT

GND

100 kΩ

DS21896B-page 2 © 2005 Microchip Technology Inc.

Functional Block Diagram – MCP1630V

MCP1630V High-Speed PWM

V

IN

MCP1630/MCP1630V

V

Overtemperature

IN

0.1 µA

OSC IN

V

IN

0.1 µA
CS
COMP

V

IN

FB

–

REF

EA

+

2.7V Clamp

V

Note: During overtemperature, V

+
Comp

–

S

R

driver is high-impedance.

EXT

UVLO

Note

Q

Q

Latch Truth Table

SRQ

00Qn
011
100
111

V

EXT

GND

100 kΩ

© 2005 Microchip Technology Inc. DS21896B-page 3

MCP1630/MCP1630V

Typical Application Circuit – MCP1630

MCP1630 NiMH Battery Charger and Fuel Gauge Application Diagram

+8V to +15V Input Voltage

SEPIC Converter

C

C

+V

BATT

4 NiMH Cells

5.7V

+5V Bias

+V

BATT

I2C™ To System

MCP1700

3.0V

SOT23

Cin

MCP1630

V

IN

COMP

V

EXT

FB
OSC IN

V

REF

CS

GND

+5V Bias

PIC16LF818

PWM OUT

V

DD

+

A/D

A/D

1:1

N-channel
MOSFET

I

SW

1/2 MCP6042

1/2 MCP6042

C

OUT

I

BATT

3V

0V

V

DD

+

V

DD

+

DS21896B-page 4 © 2005 Microchip Technology Inc.

Typical Application Circuit - MCP1630V

Bidirectional Power Converter/Battery Charger for 4-Series Cell Li-Ion Batteries

Bidirectional Buck/Boost

MCP1630/MCP1630V

4-Cell Li-Ion
Battery Pack

+

DC Bus
Voltage

–

Boost Buck

L

Sync.

FET

Driver

Boost
Switch

REF

+

C

IN

V

SENSE

0V to 2.7V

+DC Bus V

MCP1630V

V

Comp

REF

V

FB

IN

V

CS

EXT

GND

OSC

(1/2) MCP6021

+
–

GND

R

SENSE

Battery Protection
Switches

SMBus

Charge Current Loop

Battery
Protection
and
Monitor

+2.5 V

REF

Fuse

PS501

+V

BATT

-V

BATT

Buck
Switch

+

C

OUT

I

SENSE

(1/2) MCP6021

+
–

PIC16F88

DC bus Voltage Loop

SMBus

I

Voltage (PWM)

REF

Filter

+
–

(1/2) MCP6021

© 2005 Microchip Technology Inc. DS21896B-page 5

MCP1630/MCP1630V

1.0 ELECTRICAL CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the

Absolute Maximum Ratings †

operational listings of this specification is not implied.
Exposure to maximum rating conditions fo r ext ended pe riods

VDD...................................................................................6.0V

Maximum Voltage on Any Pin .. (V
V

Short Circuit Current...........................Internally Limited

EXT

- 0.3)V to (VIN + 0.3)V

GND

may affect device reliability.

Storage temperature....................... .. .... .. ..... .-65°C to +150°C

Maximum Junction Temperature, T

...........................+150°C

J

Continuous Operating T emperature Range..-40°C to +125°C

ESD protection on all pins, HBM......................................... 3kV

AC/DC CHARACTERISTICS

AC/

Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, F

for typical values= 5.0V, TA= -40°C to +125°C.

V

IN

Parameters Sym Min Typ Max Units Conditions

Input Voltage

Input Operating Voltage V
Input Quiescent Current I(V

IN

)—2.84.5mAI

IN

3.0 — 5.5 V

Oscillator Input

External Oscillator Range F
Min. Oscillator High Time

Min. Oscillator Low Time

T

OH_MIN

T

OL_MIN

Oscillator Rise Time T
Oscillator Fall Time T
Oscillator Input Voltage Low V
Oscillator Input Voltage High V
Oscillator Input Capacitance C

OSC

RISE
FALL

L
H

OSC

—— 1MHzNote 1
—10 ns

0.01 — 10 µs Note 2

0.01 — 10 µs Note 2
——0.8V

2.0 — — V
5pf

External Reference Input

Reference Voltage Input V

REF

0—VINV Note 2, Note 3

Error Amplifier

Input Offset Voltage V

OS

-4 0.1 +4 mV
Error Amplifier PSRR PSRR 80 99 — dB V
Common Mode Input Range V

GND - 0.3 — V

CM

Common Mode Rejection Ratio — 80 — dB V
Open-loop Voltage Gain A

Low-level Output V

VOL

OL

85 95 — dB RL=5kΩ to VIN/2, 100 mV < V

— 25 GND + 50 m V RL = 5 kΩ to VIN/2
Gain Bandwidth Product GBWP — 3.5 — MHz V
Error Amplifier Sink Current I

Error Amplifier Source Current I

SINK

SOURCE

511—mAV

-2 -9 — mA VIN=5V, V

Note 1: Capable of higher frequency operation depending on minimum and maximum duty cycles needed.

2: External oscillator input (OSC IN) rise and fall times between 10 ns and 10 µs used for characterization testing. Signal

levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum
values. Not production tested.

3: The reference input of the internal amplifier is capable of rail-to-rail operation.

= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,

OSC

=0mA, F

EXT

= 3.0V to 5.0V, VCM=1.2V

IN

IN

V Note 2, Note 3

=5V, VCM= 0V to 2.5V

IN

< V

- 100 mV, VCM=1.2V

IN

=5V

IN

=5V, V

IN

V

COMP

V

COMP

OSC IN

= 1.2V, VFB=1.4V,

REF

=2.0V

= 1.2V, VFB=1.0V,

REF

= 2.0V, Absolute Value

=0Hz

EAOUT

DS21896B-page 6 © 2005 Microchip Technology Inc.

MCP1630/MCP1630V

AC/DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, F

for typical values = 5.0V, TA= -40°C to +125°C.

V

IN

Parameters Sym Min Typ Max Units Conditions

Current Sense Input

Maximum Current Sense Signal

V

CS_MAX

0.85 0.9 0.95 V Set by maximum error amplifier

MCP1630
Delay From CS to V

EXT

T

CS_VEXT

—1225ns

MCP1630
Maximum Current Sense Signal

MCP1630V

Delay From CS to V

EXT

V

CS_MAX

T

CS_VEXT

2.55 2.7 2.85 V VIN > 4.25V

— 17.5 35 ns

MCP1630V
Minimum Duty Cycle DC

Current Sense Input Bias Current I

MIN

CS_B

—— 0 %V

—-0.1— µAV

Internal Driver

P-channel R

R

DSON

R

N-channel R

DSON

Rise Time T

V

EXT

V

Fall Time T

EXT

DSon_P
DSon_N

RISE

FALL

—1030 Ω
—730Ω
— 5.9 18 ns CL= 100 pF

— 6.2 18 ns CL= 100 pF

Protection Features

Under Voltage Lockout UVLO 2.7 — 3.0 V V

Under Voltage Lockout Hysteresis UVLO
Thermal Shutdown T
Thermal Shutdown Hysteresis T

SHD_HYS

HYS

SHD

50 75 150 mV

— 150 — °C
—18—°C

Note 1: Capable of higher frequency operation depending on minimum and maximum duty cycles needed.

2: External oscillator input (OSC IN) rise and fall times between 10 ns and 10 µs used for characterization testing. Signal

levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum
values. Not production tested.

3: The reference input of the internal amplifier is capable of rail-to-rail operation.

= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,

OSC

clamp voltage, divided by 3.

Maximum CS input range limited by
comparator input common mode
range. V

V

Typical for V

Typical for V

CS_MAX=VIN

FB=VREF

=GND

CS

=5V

IN

falling, V

IN

+0.1V,

=3V

IN

=3V

IN

low state when in

EXT

UVLO

-1.4V

TEMPERATURE SPECIFICATIONS

Electrical Specifications: V

= 3.0V to 5.5V, F

IN

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Operating Junction Temperature Range T
Storage Temperature Range T
Maximum Junction Temperature T

Thermal Package Resistances

Thermal Resistance, 8L-DFN
(2 mm x 3 mm)

Thermal Resistance, 8L-MSOP θ

© 2005 Microchip Technology Inc. DS21896B-page 7

= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF. TA= -40°C to +125°C.

OSC

A
A

J

θ

JA

-40 — +125 °C Steady state

-65 — +150 °C
— — +150 °C Transient

— 50.8 — °C/W Typical 4-layer board with two

interconnecting vias

JA

— 208 — °C/W Typical 4-layer board

MCP1630/MCP1630V

Amplifier Phase Shift

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and t ables provided following this note are a statistical summar y b as ed on a l im ite d n um ber of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise noted, VIN = 3.0V to 5.5V, F
values = 5.0V, T

3.5
3

2.5
2

1.5
1

0.5

Quiescent Current (mA)

IN

V

0

= -40°C to +125°C.

A

F

= DC

OSC IN

TA = - 40°C

3

3.25

3.5

TA = + 125°C

TA = + 25°C

3.7544.25

Input Voltage (V)

4.5

4.7555.25

5.5

FIGURE 2-1: Input Quiescent Current vs. Input Voltage.

4.5

F

= 1 MHz

OSC IN

4

3.5
3

2.5
2

1.5
1

Quiescent Current (mA)

0.5

IN

V

0

TA = - 40°C

3

3.25

3.5

TA = + 125°C

TA = + 25°C

3.7544.25
Input Voltage (V)

4.5

4.7555.25

5.5

= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typic al

OSC

700

VCM = V

IN

3

3.25

TA = + 125°C

TA = - 40°C

3.5

3.7544.25

Input Voltage (V)

TA = + 85°C

4.5

4.7555.25

TA = + 25°C

Amplifier Input Bias Current

600
500
400
300

(pA)

200
100

0

-100

FIGURE 2-4: Error Amplifier Input Bias Current vs. Input Voltage.

18
16
14
12
10

8
6
4
2

Amplifier Sink Current (mA)

0

3

3.25

3.5

3.7544.25
Input Voltage (V)

TA = - 40°C

TA = + 25°C

TA = + 125°C

4.5

4.7555.25

5.5

5.5

FIGURE 2-2: Input Quiescent Current vs. Input Voltage.

2
0

-2

-4

-6

-8

-10

Amplifier Gain (db)

-12

-14

1M 10M 5M

1000000 10000000

V

= 2V

REF

R

= 4.7 k

LOAD

C

= 67 pF

LOAD

Gain

Ω

Phase

Frequency (Hz)

250

200

150

100

50

0

(degrees)

FIGURE 2-3: Error Amplifier Frequency Response.

FIGURE 2-5: Error Amplifier Sink Current vs. Input Voltage.

0

-2

-4

-6

-8

-10

-12

-14

Amplifier Source Current (mA)

3

3.5

3.25
Input Voltage (V)

TA = + 125°C

TA = + 25°C

TA = - 40°C

3.7544.25

4.5

4.7555.25

5.5

FIGURE 2-6: Error Amplifier Source Current vs. Input Voltage.

DS21896B-page 8 © 2005 Microchip Technology Inc.

MCP1630/MCP1630V

DSON

Note: Unless otherwise noted, VIN = 3.0V to 5.5V, F

values = 5.0V, T

10

9
8
7
6
5
4

Rise Time (ns)

3

EXT

2

V

1
0

FIGURE 2-7: V

= -40°C to +125°C.

A

TA = + 25°C

3

3.25

3.5

TA = + 125°C

TA = - 40°C

3.7544.25
Input Voltage (V)

EXT

4.5

Rise Time vs. Input

CL = 100 pF

4.7555.25

5.5

Voltage.

Fall Time (ns)
V

EXT

9
8
7
6
5
4

TA = + 25°C

3
2
1
0

3

3.25

3.5

TA = + 125°C

TA = - 40°C

3.7544.25
Input Voltage (V)

4.5

4.7555.25

CL = 100 pF

5.5

= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typic al

OSC

0.9

TA = - 40°C

TA = + 125°C

TA = + 25°C

3

3.25

3.5

3.7544.25
Input Voltage (V)

4.5

4.7555.25

CS Clamp Voltage (V)

0.899

0.898

0.897

0.896

0.895

FIGURE 2-10: Current Sense Clamp Voltage vs. Input Voltage (MCP1630).

2.96

2.94

2.92

2.90

2.88

UVLO Threshold (V)

2.86

2.84

-40 -25 -10 5 20 35 50 65 80 95 110 125

Turn On Thresh old

Turn Off Thres hold

Ambient Temperature (°C)

5.5

FIGURE 2-8: V

Fall Time vs. Input

EXT

Voltage.

25

20

15

delay (ns)

EXT

10

5

CS to V

0

3

3.25

3.5

TA = + 125°C

TA = - 40°CTA = + 25°C

3.7544.25

Input Voltage (V)

4.5

4.7555.25

FIGURE 2-9: Current Sense to V
Delay vs. Input Voltage (MCP1630).

EXT

FIGURE 2-11: Undervoltage Lockout vs. Temperature.

12
10

8
6

(ohms)

4
2
0

EXT Output N-Channel R

5.5

FIGURE 2-12: EXT Output N-channel
R

DSON

3

vs. Input Voltage.

3.5

3.25

TA = + 125°C

TA = - 40°CTA = + 25°C

4

3.75

4.25

Input Voltage (V)

4.5

5

4.75

5.5

5.25

© 2005 Microchip Technology Inc. DS21896B-page 9