Microchip Technology MCP1630V, MCP1630 User Manual

MCP1630/MCP1630V
High-Speed, Microcontroller-Adaptable,
Pulse Width Modulator
Features
• High-S pe ed PWM Op era tion (12ns Current Sense to Output Delay)
• Operating Temperature Range:
- -40°C to +125°C
• Precise Peak Current Limit (±5%) (MCP1630)
• CMOS Output Driver (drives MOSFET driver or low-side N-channel MOSFET directly)
• External Oscillator Input (from PICmicro
®
Microcontroller (MCU))
• External Voltage Reference Input (for adjustable voltage or current out put app lic at ion )
• Peak Current Mode Operation > 1 MHz
• Low Operating Current: 2.8 mA (typ.)
• Fast Output Rise and Fall Times: 5.9 ns and
6.2 ns
• Undervoltage Lockout (UVLO) Protection
• Output Short Circuit Protection
• Overtemperature Protection
Applications
• Intelligent Power Systems
• Smart Battery Charger Applications
• Multiple Output/Multiple Phase Converters
• Output V oltage Calibration
• AC Power Factor Correction
• VID Capability (programmed and cal ibrated by PICmicro
• Buck/Boost/Buck-Boost/SEPIC/Flyback/Isolated Converters
• Parallel Power Supplies
®
microcontroller)
Description
The MCP1630/V is a high-speed Pulse Width Modula­tor (PWM ) used t o devel op int ellige nt power syst ems. When used with a microcontroller unit (MCU), the MCP1630/V will control the pow er system dut y cycle to provide output voltage or current regulation. The MCU can be used to ad just o utput v olt age o r curren t, switc h­ing frequency, maximum duty cycle and other features that make the power system more intelligent.
Typical applications include smart battery chargers, intelligent power systems, brick dc/dc converters, ac power-factor correction, multiple output power supplies, multi-phase power supplies and more.
The MCP1630/V inputs were developed to be easily attached to the I/O of a MCU. The MC U supplies the oscillator and reference to the MCP1630/V to provide the most flexible and adaptable power system. The power system switching frequency and maximum duty cycle are set using the I/O of the MCU. The reference input can be external, a D/A Converter (DAC) output or as simple as an I/ O ou tput fro m the MCU . This enab les the power system to adapt to many external signals and variables in order to optimize performance and facilitate calib rati on.
When operating in Current mode, a precise limit is set on the peak current. With the fast comparator speed (typically 12 ns), the MCP1630 is capable of providing a tight limit on the maximum switch current over a wide input voltage range when compared to other high-speed PWM controllers.
For Voltage mode or Average Current mode applications, the MCP1630V provides a larger range for the external ramp voltage.
Additional protection features include: UVLO, overtemperature and overcurrent.
Related Literature
Package Type
• “MCP1630 NiMH Demo Board User’s Guide”, Microchip Technology Inc., DS51505, 2004
• “MCP1630 Low-Cost Li- Ion Battery Charger User’s Guide”, Microchip Technology Inc., DS51555, 2005
• “MCP1630 Li-Ion Multi-Bay Battery Charger User’s Guide”, Microchip Technology Inc., DS51515, 2005
8-Lead DFN
(2 mm x 3 mm)
COMP
1
FB
2
CS
3
OSC IN
4
8 7 6 5
V
REF
V
IN
V
EXT
GND
COMP
FB
CS
OSC IN
8-Lead MSOP
1 2 3 4
V
8
REF
7
V
IN
6
V
EXT
5
GND
• “MCP1630 Dual Buck Demo Board User’s Guide”, Microchip Technology Inc., DS51531, 2005
© 2005 Microchip Technology Inc. DS21896B-page 1
MCP1630/MCP1630V
Functional Block Diagram – MCP1630
MCP1630 High-Speed PWM
V
IN
Overtemperature
V
IN
0.1 µA
OSC IN
V
IN
0.1 µA CS COMP
V
IN
FB
REF
EA
+
2R
2.7V Clamp
V
Note: During overtemperat ure, V
S
+ Comp
EXT
R
R
driver is high-impedance.
UVLO
Note
Q
Q
Latch Truth Table
SRQ
00Qn 011 100 111
V
EXT
GND
100 kΩ
DS21896B-page 2 © 2005 Microchip Technology Inc.
Functional Block Diagram – MCP1630V
MCP1630V High-Speed PWM
V
IN
MCP1630/MCP1630V
V
Overtemperature
IN
0.1 µA
OSC IN
V
IN
0.1 µA CS COMP
V
IN
FB
REF
EA
+
2.7V Clamp
V
Note: During overtemperature, V
+ Comp
S
R
driver is high-impedance.
EXT
UVLO
Note
Q
Q
Latch Truth Table
SRQ
00Qn 011 100 111
V
EXT
GND
100 kΩ
© 2005 Microchip Technology Inc. DS21896B-page 3
MCP1630/MCP1630V
Typical Application Circuit – MCP1630
MCP1630 NiMH Battery Charger and Fuel Gauge Application Diagram
+8V to +15V Input Voltage
SEPIC Converter
C
C
+V
BATT
4 NiMH Cells
5.7V
+5V Bias
+V
BATT
I2C™ To System
MCP1700
3.0V
SOT23
Cin
MCP1630
V
IN
COMP
V
EXT
FB OSC IN
V
REF
CS
GND
+5V Bias
PIC16LF818
PWM OUT
V
DD
+
A/D
A/D
1:1
N-channel MOSFET
I
SW
1/2 MCP6042
1/2 MCP6042
C
OUT
I
BATT
3V
0V
V
DD
+
V
DD
+
DS21896B-page 4 © 2005 Microchip Technology Inc.
Typical Application Circuit - MCP1630V
Bidirectional Power Converter/Battery Charger for 4-Series Cell Li-Ion Batteries
Bidirectional Buck/Boost
MCP1630/MCP1630V
4-Cell Li-Ion Battery Pack
+
DC Bus Voltage
Boost Buck
L
Sync.
FET
Driver
Boost Switch
REF
+
C
IN
V
SENSE
0V to 2.7V
+DC Bus V
MCP1630V
V
Comp
REF
V
FB
IN
V
CS
EXT
GND
OSC
(1/2) MCP6021
+ –
GND
R
SENSE
Battery Protection Switches
SMBus
Charge Current Loop
Battery Protection and Monitor
+2.5 V
REF
Fuse
PS501
+V
BATT
-V
BATT
Buck Switch
+
C
OUT
I
SENSE
(1/2) MCP6021
+ –
PIC16F88
DC bus Voltage Loop
SMBus
I
Voltage (PWM)
REF
Filter
+ –
(1/2) MCP6021
© 2005 Microchip Technology Inc. DS21896B-page 5
MCP1630/MCP1630V

1.0 ELECTRICAL CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
Absolute Maximum Ratings †
operational listings of this specification is not implied. Exposure to maximum rating conditions fo r ext ended pe riods
VDD...................................................................................6.0V
Maximum Voltage on Any Pin .. (V V
Short Circuit Current...........................Internally Limited
EXT
- 0.3)V to (VIN + 0.3)V
GND
may affect device reliability.
Storage temperature....................... .. .... .. ..... .-65°C to +150°C
Maximum Junction Temperature, T
...........................+150°C
J
Continuous Operating T emperature Range..-40°C to +125°C
ESD protection on all pins, HBM......................................... 3kV
AC/DC CHARACTERISTICS
AC/
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, F
for typical values= 5.0V, TA= -40°C to +125°C.
V
IN
Parameters Sym Min Typ Max Units Conditions
Input Voltage
Input Operating Voltage V Input Quiescent Current I(V
IN
)—2.84.5mAI
IN
3.0 5.5 V
Oscillator Input
External Oscillator Range F Min. Oscillator High Time
Min. Oscillator Low Time
T
OH_MIN
T
OL_MIN
Oscillator Rise Time T Oscillator Fall Time T Oscillator Input Voltage Low V Oscillator Input Voltage High V Oscillator Input Capacitance C
OSC
RISE FALL
L H
OSC
—— 1MHzNote 1 —10 ns
0.01 10 µs Note 2
0.01 10 µs Note 2 ——0.8V
2.0 V 5pf
External Reference Input
Reference Voltage Input V
REF
0—VINV Note 2, Note 3
Error Amplifier
Input Offset Voltage V
OS
-4 0.1 +4 mV Error Amplifier PSRR PSRR 80 99 dB V Common Mode Input Range V
GND - 0.3 V
CM
Common Mode Rejection Ratio 80 dB V Open-loop Voltage Gain A
Low-level Output V
VOL
OL
85 95 dB RL=5kΩ to VIN/2, 100 mV < V
25 GND + 50 m V RL = 5 kΩ to VIN/2 Gain Bandwidth Product GBWP 3.5 MHz V Error Amplifier Sink Current I
Error Amplifier Source Current I
SINK
SOURCE
511—mAV
-2 -9 mA VIN=5V, V
Note 1: Capable of higher frequency operation depending on minimum and maximum duty cycles needed.
2: External oscillator input (OSC IN) rise and fall times between 10 ns and 10 µs used for characterization testing. Signal
levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested.
3: The reference input of the internal amplifier is capable of rail-to-rail operation.
= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
OSC
=0mA, F
EXT
= 3.0V to 5.0V, VCM=1.2V
IN
IN
V Note 2, Note 3
=5V, VCM= 0V to 2.5V
IN
< V
- 100 mV, VCM=1.2V
IN
=5V
IN
=5V, V
IN
V
COMP
V
COMP
OSC IN
= 1.2V, VFB=1.4V,
REF
=2.0V
= 1.2V, VFB=1.0V,
REF
= 2.0V, Absolute Value
=0Hz
EAOUT
DS21896B-page 6 © 2005 Microchip Technology Inc.
MCP1630/MCP1630V
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, F
for typical values = 5.0V, TA= -40°C to +125°C.
V
IN
Parameters Sym Min Typ Max Units Conditions
Current Sense Input
Maximum Current Sense Signal
V
CS_MAX
0.85 0.9 0.95 V Set by maximum error amplifier
MCP1630 Delay From CS to V
EXT
T
CS_VEXT
—1225ns
MCP1630 Maximum Current Sense Signal
MCP1630V
Delay From CS to V
EXT
V
CS_MAX
T
CS_VEXT
2.55 2.7 2.85 V VIN > 4.25V
17.5 35 ns
MCP1630V Minimum Duty Cycle DC
Current Sense Input Bias Current I
MIN
CS_B
—— 0 %V
—-0.1— µAV
Internal Driver
P-channel R
R
DSON
R
N-channel R
DSON
Rise Time T
V
EXT
V
Fall Time T
EXT
DSon_P DSon_N
RISE
FALL
—1030 Ω —730Ω 5.9 18 ns CL= 100 pF
6.2 18 ns CL= 100 pF
Protection Features
Under Voltage Lockout UVLO 2.7 3.0 V V
Under Voltage Lockout Hysteresis UVLO Thermal Shutdown T Thermal Shutdown Hysteresis T
SHD_HYS
HYS
SHD
50 75 150 mV
150 °C —18—°C
Note 1: Capable of higher frequency operation depending on minimum and maximum duty cycles needed.
2: External oscillator input (OSC IN) rise and fall times between 10 ns and 10 µs used for characterization testing. Signal
levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested.
3: The reference input of the internal amplifier is capable of rail-to-rail operation.
= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
OSC
clamp voltage, divided by 3.
Maximum CS input range limited by comparator input common mode range. V
V
Typical for V
Typical for V
CS_MAX=VIN
FB=VREF
=GND
CS
=5V
IN
falling, V
IN
+0.1V,
=3V
IN
=3V
IN
low state when in
EXT
UVLO
-1.4V
TEMPERATURE SPECIFICATIONS
Electrical Specifications: V
= 3.0V to 5.5V, F
IN
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range T Storage Temperature Range T Maximum Junction Temperature T
Thermal Package Resistances
Thermal Resistance, 8L-DFN (2 mm x 3 mm)
Thermal Resistance, 8L-MSOP θ
© 2005 Microchip Technology Inc. DS21896B-page 7
= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF. TA= -40°C to +125°C.
OSC
A A
J
θ
JA
-40 +125 °C Steady state
-65 +150 °C — +150 °C Transient
50.8 °C/W Typical 4-layer board with two
interconnecting vias
JA
208 °C/W Typical 4-layer board
MCP1630/MCP1630V
Amplifier Phase Shift
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and t ables provided following this note are a statistical summar y b as ed on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, F values = 5.0V, T
3.5 3
2.5 2
1.5 1
0.5
Quiescent Current (mA)
IN
V
0
= -40°C to +125°C.
A
F
= DC
OSC IN
TA = - 40°C
3
3.25
3.5
TA = + 125°C
TA = + 25°C
3.7544.25
Input Voltage (V)
4.5
4.7555.25
5.5

FIGURE 2-1: Input Quiescent Current vs. Input Voltage.

4.5
F
= 1 MHz
OSC IN
4
3.5 3
2.5 2
1.5 1
Quiescent Current (mA)
0.5
IN
V
0
TA = - 40°C
3
3.25
3.5
TA = + 125°C
TA = + 25°C
3.7544.25 Input Voltage (V)
4.5
4.7555.25
5.5
= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typic al
OSC
700
VCM = V
IN
3
3.25
TA = + 125°C
TA = - 40°C
3.5
3.7544.25
Input Voltage (V)
TA = + 85°C
4.5
4.7555.25
TA = + 25°C
Amplifier Input Bias Current
600 500 400 300
(pA)
200 100
0
-100

FIGURE 2-4: Error Amplifier Input Bias Current vs. Input Voltage.

18 16 14 12 10
8 6 4 2
Amplifier Sink Current (mA)
0
3
3.25
3.5
3.7544.25 Input Voltage (V)
TA = - 40°C
TA = + 25°C
TA = + 125°C
4.5
4.7555.25
5.5
5.5

FIGURE 2-2: Input Quiescent Current vs. Input Voltage.

2 0
-2
-4
-6
-8
-10
Amplifier Gain (db)
-12
-14
1M 10M 5M
1000000 10000000
V
= 2V
REF
R
= 4.7 k
LOAD
C
= 67 pF
LOAD
Gain
Ω
Phase
Frequency (Hz)
250
200
150
100
50
0
(degrees)

FIGURE 2-3: Error Amplifier Frequency Response.

FIGURE 2-5: Error Amplifier Sink Current vs. Input Voltage.

0
-2
-4
-6
-8
-10
-12
-14
Amplifier Source Current (mA)
3
3.5
3.25 Input Voltage (V)
TA = + 125°C
TA = + 25°C
TA = - 40°C
3.7544.25
4.5
4.7555.25
5.5

FIGURE 2-6: Error Amplifier Source Current vs. Input Voltage.

DS21896B-page 8 © 2005 Microchip Technology Inc.
MCP1630/MCP1630V
DSON
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, F
values = 5.0V, T
10
9 8 7 6 5 4
Rise Time (ns)
3
EXT
2
V
1 0
FIGURE 2-7: V
= -40°C to +125°C.
A
TA = + 25°C
3
3.25
3.5
TA = + 125°C
TA = - 40°C
3.7544.25 Input Voltage (V)
EXT
4.5
Rise Time vs. Input
CL = 100 pF
4.7555.25
5.5
Voltage.
Fall Time (ns) V
EXT
9 8 7 6 5 4
TA = + 25°C
3 2 1 0
3
3.25
3.5
TA = + 125°C
TA = - 40°C
3.7544.25 Input Voltage (V)
4.5
4.7555.25
CL = 100 pF
5.5
= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typic al
OSC
0.9
TA = - 40°C
TA = + 125°C
TA = + 25°C
3
3.25
3.5
3.7544.25 Input Voltage (V)
4.5
4.7555.25
CS Clamp Voltage (V)
0.899
0.898
0.897
0.896
0.895

FIGURE 2-10: Current Sense Clamp Voltage vs. Input Voltage (MCP1630).

2.96
2.94
2.92
2.90
2.88
UVLO Threshold (V)
2.86
2.84
-40 -25 -10 5 20 35 50 65 80 95 110 125
Turn On Thresh old
Turn Off Thres hold
Ambient Temperature (°C)
5.5
FIGURE 2-8: V
Fall Time vs. Input
EXT
Voltage.
25
20
15
delay (ns)
EXT
10
5
CS to V
0
3
3.25
3.5
TA = + 125°C
TA = - 40°CTA = + 25°C
3.7544.25
Input Voltage (V)
4.5
4.7555.25
FIGURE 2-9: Current Sense to V Delay vs. Input Voltage (MCP1630).
EXT

FIGURE 2-11: Undervoltage Lockout vs. Temperature.

12 10
8 6
(ohms)
4 2 0
EXT Output N-Channel R
5.5
FIGURE 2-12: EXT Output N-channel R
DSON
3
vs. Input Voltage.
3.5
3.25
TA = + 125°C
TA = - 40°CTA = + 25°C
4
3.75
4.25
Input Voltage (V)
4.5
5
4.75
5.5
5.25
© 2005 Microchip Technology Inc. DS21896B-page 9
MCP1630/MCP1630V
DSON
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, F
values = 5.0V, T
18 16 14 12 10
8
(Ohms)
6 4 2
EXT Output P-Channel R
0
= -40°C to +125°C.
A
TA = + 25°C
3
3.5
3.25
3.75
TA = + 125°C
TA = - 40°C
4
Input Voltage (V)
4.5
4.25
5
4.75
5.5
5.25
FIGURE 2-13: EXT Output P-channel R
vs. Input Voltage.
DSON
0
-50
-100
(µV)
-150
-200
-250
Error Amp Input Offset Voltage
3
TA = + 125°C
TA = + 25°C
TA = - 40°C
3.5
3.25
3.7544.25
Input Voltage (V)
4.5
V
= 0V
CM IN
4.7555.25
5.5
= 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typic al
OSC
3
2.7
2.4
2.1
1.8
Maximum CS Inpu t (V)
1.5
33.544.555.5 Input Voltage (V)
CS Common Mode Input Range
TA = +25°C

FIGURE 2-16: Current Sense Common Mode Input Voltage Range vs. Input Voltage (MCP1630V).

30
Delay (ns)
CS to V
EXT
25 20 15 10
5 0
3
3.25
TA = -40°C
3.5
3.7544.25 Input Voltage (V)
TA = +125°C
TA = +25°C
4.5
4.7555.25
5.5

FIGURE 2-14: Error Amplifier Input Offset Voltage vs. Input Voltage.

Error Amp Input Offset Voltage
150 100
50
0
(µV)
-50
-100
-150
-200
3
3.25
3.5
TA = + 125°C
TA = + 25°C
TA = - 40°C
3.7544.25
Input Voltage (V)
V
4.5
4.7555.25
CM IN
= 1.2V
5.5
FIGURE 2-17: Current Sense to V Delay vs. Input Voltage (MCP1630V).
EXT

FIGURE 2-15: Error Amplifier Input Offset Voltage vs. Input Voltage.

DS21896B-page 10 © 2005 Microchip Technology Inc.
MCP1630/MCP1630V

3.0 MCP1630 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

DFN/MSOP Name Function
1 COMP Error Amplifier Output pin 2 FB Error Amplifier Inverting Input 3 CS Current Sense Input pin (MCP1630) or Voltage Ramp Input pin (MCP1630V) 4 OSC IN Oscillator Input pin 5 GND Circuit Ground pin 6V 7V 8V
EXT
IN
REF
External Driver Output pin Input Bias pin Reference Voltage Input pin

3.1 Error Amplifier Output Pin (COMP)

COMP is an internal error amplifier out put pin. Externa l compensation is connected from the FB pin to the COMP pin for control-loop stabilization. An internal voltage clamp is used to limit the maximum COMP pin voltage to 2.7V (typ.). This clamp is used to set the maximum peak curr ent in t he power s ystem swit ch by setting a maximum limit on the CS input for Peak Current mode control systems.

3.2 Error Amplifier Inverting Input (FB)

FB is an internal error amplifier inverting input pin. The output (v oltage or cu rrent) is se nsed and fe d back to the FB pin for regulation. Inverting or negative feedback is used.

3.3 Current Sensing Input (CS)

CS is the current sense input pin used for cycle-by­cycle control for Peak Current mode converters. The MCP1630 is typically used for sensed current applications to reduce the current sense signal, thus reducing power dissipation.
For Voltage mode or Average Current mode applications, a ramp is used to compare the error amplifier output voltage with producing the PWM duty cycle. For applicatio ns that requ ire higher sign al levels , the MCP1630V is used to increase the level from a maximum of 0.9V (MCP1630) to 2.7V (MCP1630V). The common mode voltage range for the MCP1630V CS input is V CS input should be less than or equal to V all times.
-1.4V. For normal PWM operation, the
IN
- 1.4V at
IN

3.4 Oscillator Input (OSC)

OSC is an external oscillator input pin. Typically, a microcontroller I/O pin is used to generate the OSC input. When high, the output driver pin (V
) is driven
EXT
low. The high-to-low transition initiates the start of a new cycle. The duty cycle of the OSC input pin deter­mines the maximum dut y c yc le of th e po w er co nv erte r. For example, if the OS C input is low for 75% of the time and high for 25% of the time, the duty cycle range for the power co nverter is 0% to 75% maximum.

3.5 Ground (GND)

Connect the circuit ground to the GND pin. For most applications, this s ho uld be connected to the analog or quiet ground plane . Noise on thi s grou nd can af fect th e sensitive cycle-by-cycle comparison between the CS input and the error amplifier output.
3.6 External Driver Output Pin (V
V
is an external driver output pin, used to determine
EXT
the power system duty cycle. For high-power or high­side drives, this output should be connected to the logic­level input of the MOSFE T driver. For low-power, low­side applications, the V drive the gate of an N-channel MOSFET.
pin can be used to dir ectly
EXT
EXT
)

3.7 Input Bias Pin (VIN)

VIN is an input voltage pin. Connect the input voltage source to the V on the V
0.1 µF bypass capacitor should be connected between the V
IN
pin and the GND pin.
IN
3.8 Reference Voltage Input (V
V
is an external reference input pin used to regulate
REF
the output of the power system. By changing the V input, the output (voltage or current) of the power sys­tem can be changed. The reference voltage can range from 0V to V
pin. For normal opera tion, the v oltag e
IN
pin should be between +3.0V and +5.5V. A
)
REF
REF
(rail-to-rail).
IN
© 2005 Microchip Technology Inc. DS21896B-page 11
MCP1630/MCP1630V

4.0 DETAILED DESCRIPTION

4.1 Device Overview

The MCP1630 is comprised of a high-speed compara­tor, high-bandwidth amplifier and logic gates that can be combined with a PICmicro MCU to develop an advanced programmable power supply. The oscillator and reference voltage inputs are generated by the PICmicro MCU so that switching frequency, maximum duty cycle and outpu t volta ge are programm able. Refer to Figure 4-1.

4.2 PWM

The V the output level of the internal high-speed comparator and the level of the external oscillator. When the oscil­lator level is high, the PWM output (V When the external oscillator is low, the PWM output is determined by the output level of the internal high­speed comparator. During UVLO, the V in the low state. During overte mperatu re o perati on, the V
EXT

4.3 Normal Cycle by Cycle Control

The beginning of a cy cl e is def ined when OSC IN tran­sitions from a high st ate to a low state. For no rmal oper­ation, the state of the high-speed comparator output (R) is low an d the Q OSC IN high-to-low transition, the S and R input s to the high-speed latch are both low and the Q output will remain unchanged (low). The output of the OR gate (V turning on the internal P-channel drive transistor in the output stage of the PWM. This will change the PWM output (V on the power-train external switch and ramping current in the power-train magnetic device.
The sensed current in the magnetic device is fed into the CS input (shown as a ramp) and increa ses lin ear ly. Once the sensed curren t ramp (MCP16 30) reaches th e same voltage l evel as 1 /3 of the EA ou tput, the co mpar­ator output (R) changes states (low-to-high) and resets the PWM latch. The Q state to a hig h state, turn ing on the N-chan nel MOSFET in the output sta ge, which turns of f the V external MOSFET driver terminating the duty cycle. The OSC IN will transition from a low state to a high state while the V input ramp had ne ve r rea ch ed the same level as 1/3 of the error amplifier output, the low-to-high transition on OSC IN would terminate the duty cycle and this would be considered maximum duty cycle. In either case, while OSC IN is high, the V off the external power-train switch. The next cycle will start on the transition of the OSC IN pin from a high state to a low state.
output of the MCP1 630/V is det ermined by
EXT
) is forced low .
EXT
EXT
pin is high-impedance (100 kΩ to ground).
output of the latch is low. On the
) will transition from a high state to a low state,
DRIVE
) from a low state to a high state, turning
EXT
output transitions from a low
EXT
pin remains unchanged. If the CS
EXT
drive pin is low, turning
EXT
pin is held
drive to the
For Voltage mode or Averag e Current mode appli ca­tions that utili ze a large signal ra mp at the CS in put, th e MCP1630V is used to provide more signal (2.7V typ.). The operation of the PWM does not change.

4.4 Error Amp/Comparator Current Limit Function

The internal amplifier is used to create an error output signal that is dete rmined by the ext ernal V the power supply output fed back into the FB pin. The error amplifier output is rail-to-rail and clamped by a precision 2.7V. The output of the error amplifier is then divided down 3:1 (MCP1630) and connected to the inverting input of the hi gh-speed comp ar ator. Since the maximum output of th e error ampl ifier i s 2.7V, the max­imum input t o t he i nve r t ing p in o f t h e hi gh- s pe ed co m­parator is 0.9V. This sets the peak current limit for the switching power supply.
For the MCP1630V, the maximum error amplifier out­put is still 2.7V. However, the resistor divider is removed, raising the max im um inp ut s ig nal lev el at th e high-speed comparator inverting input (CS) to 2.7V.
As the output load c urrent de mand i ncrea ses, th e error amplifier output increases, causing the inverting input pin of the high-speed comparator to increase. Eventually, the output of the error amplifier will hit the
2.7V clamp, limiting the input of the high-speed com-
parator to 0.9V max (MCP1630). Even if the FB input continues to decrease (calling for more current), the inverting input is li mited to 0.9V . By limiting the inve rting input to 0.9V, the current-sense input (CS) is limited to
0.9V, thus limiting the output current of the power
supply. For Vo lta ge mo de co ntro l, the error a mplif ier ou tput w ill
increase as input volt age decreas es. A vo ltag e ramp i s used instead of sensed indu ctor curre nt at the C S input of the MCP1630V. The 3:1 internal error amplifier out­put resistor divid er is removed in the MCP163 0V option to increase the maximum signal level input to 2.7V (typ.).

4.5 0% Duty Cycle Operation

The duty cycle of the V ing 0% when the FB pi n is held highe r than the V (inverting error amplifier). This is accomplished by the rail-to-rail output capability of the error amplifier and the offset voltage of the high-speed comparator. The mini­mum error amplifier outpu t vo lt a ge, divided by three, is less than the offset voltage of the high-speed compar­ator. In the case where the output v oltage of t he con­verter is above the desired regulation point, the FB input will be above the V fier will be pulled to the bottom rail (GND). This low voltage is divided down 3:1 by the 2R and 1R resistor (MCP1630) and connected to the input of the high­speed comparator. This voltage will be low enough so that there is no triggering of the comparator, allowing narrow pulse widths at V
output is capable of reach-
EXT
input and the error ampli-
REF
.
EXT
input and
REF
REF
pin
DS21896B-page 12 © 2005 Microchip Technology Inc.
MCP1630/MCP1630V

4.6 Undervoltage Lockout (UVLO)

When the input voltage (VIN) is less than the UVLO threshold, the V ensure that, if the voltage is not adequate to operate the MCP1630/V, the main power supply switch will be held in the off state. When the UVLO threshold is exceeded, there is some hy steresis i n the in put volt age prior to the UVLO off threshold being reached. The typical hysteresi s is 7 5 mV . T yp ically, the MCP1630 will not start operating until the input voltage at V between 3.0V and 3.1V.
is held in the low state. This will
EXT
is
IN

4.7 Overtemperature Protection

To protect the V MCP1630/V V junction temperature is above the thermal shutdown threshold. There is an internal 100 kΩ pull-down resis­tor connected from V pull-down during overtemperature conditions. The protection is set to 150°C (typ.), with a hysteresis of 18°C.
output if shorted to VIN or GND, the
EXT
output will be high-impedance if the
EXT
to ground to provide some
EXT
© 2005 Microchip Technology Inc. DS21896B-page 13
MCP1630/MCP1630V
MCP1630 High-Speed PWM Timing Diagram
OSC IN
S
COMP
CS
R
Q
V
DRIVE
V
EXT
0.1 µA
OSC IN
CS COMP
FB
V
REF
V
IN
EA
+
V
IN
0.1 µA
V
IN
2R
2.7V Clamp
+ Comp
R
V
IN
Overtemperature
UVLO
V
EXT
Note
S
Q
GND
100 kΩ
R
Q
Latch Truth Table
SRQ
00Qn 011 100 111
Note: During overtemperature, V
driver is high-impedance.
EXT

FIGURE 4-1: Cycle-by-Cycle Timing Diagram (MCP1630).

DS21896B-page 14 © 2005 Microchip Technology Inc.
OSC IN
COMP
CS
V
DRIVE
MCP1630/MCP1630V
MCP1630V High-Speed PWM Timing Diagram
S
R
Q
V
EXT
OSC IN
FB
V
0.1 µA
CS COMP
REF
V
– +
IN
EA
V
IN
0.1 µA
V
IN
2.7V Clamp
+ Comp
V
IN
Overtemperature
UVLO
V
V
DRIVE
EXT
Note
S
Q
GND
100 kΩ
R
Q
Latch Truth Table
SRQ
00Qn 011 100 111
Note: During overtemperature, V
driver is high-impedance.
EXT

FIGURE 4-2: Cycle-by-Cycle Timing Diagram (MCP1630V).

© 2005 Microchip Technology Inc. DS21896B-page 15
MCP1630/MCP1630V

5.0 APPLICATION CIRCUITS/ISSUES

5.1 Typical Applications

The MCP1630/V hig h-speed PWM can be used for any circuit topology and power-train application when combined with a microcontroller. Intelligent, cost­effective power systems can be developed for applica­tions that require multiple outputs, multiple phases, adjustable outputs, temperature monitoring and calibration.

5.2 NiMH Battery Charger Application

A typical NiMH battery charger application is shown in the “Typical Application Circuit – MCP1630” of this data sheet. In that example, a Single-Ended P rimary Inductive Converter (SEPIC) is used to provide a constant charge current to the series-connected batteries. The MCP1630 is used to regulate the charge current by monitoring the current through the battery sense resistor and providing the proper pulse width.
The PIC16F818 monitors the batt ery voltage to pro vide a termination to the c harg e c urre nt. Addi tio nal fea ture s (trickle charge, fast charge, overvoltage protection, etc.) can be added to the sy stem using the programm a­bility of the microcontroller and the flexibility of the MCP1630.

5.3 Bidirectional Power Converter

A bidirect ional Li-Io n charger/ buck regul ator is show n in the “Typical Application Circuit” of the this data sheet. In this example, a synchronous, bidirectional power converter example is shown using the MCP1630V. In this application, when the ac-dc input power is present, the bidirectional power converter is used to charge 4-series Li-Ion batteries by boo sting th e input voltage. When ac-dc power is removed, the bidirectional power conv erter bu cks th e battery volt age down to provide a dc bus for system power. By using this method, a single power train is capable of charging 4-series ce ll Li-Ion batt eries and effici ently convert ing the battery voltage down to a low, usable voltage.

5.4 Multiple Output Converters

By using additional MCP1630 devices, multiple output converters can be developed using a single MCU. If a two-output converter is desired, the MCU can provide two PWM outp uts that are phased 180° apart. This will reduce the input ripple current to the source and eliminate beat frequencies .
DS21896B-page 16 © 2005 Microchip Technology Inc.

6.0 PACKAGING INFORMATION

6.1 Package Marking Information
8-Lead MSOP
XXXXX
YWWNNN
MCP1630/MCP1630V
Example:
1630E
522256
Example:
1630VE 522256
8-Lead DFN (2 mm x 3 mm)
XXX
YWW
NN
For DFN samples, cont act your Microc hip Sales Of fice for availability..
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code
3
e
Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Mic rochip part nu mber ca nnot be m arked o n one lin e, it will
be carried over to the next line, thus limiting the number of available characters for customer-specific information.
Example:
ABC
522
25
3
e
© 2005 Microchip Technology Inc. DS21896B-page 17
MCP1630/MCP1630V
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
E
E1
p
D
2
B
n 1
α
L
8
.033
.006 .012
A
φ
A1
MAX NOM
--
.043 .037 .006
-
.031
.009
.016
-
MIN
15° 15°
0.75
0.00
0.40
0.08
0.22
c
(F)
β
Dimension Limits
Units
Number of Pins Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length
Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom
*Controlling Parameter Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side.
JEDEC Equivalent: MO-187
Drawing No. C04-111
MIN
n p
A
A2
A1
E
E1
D
L
φ
c
B
α β
INCHES
NOM
.026 BSC
.030 .000
.193 TYP. .118 BSC .118 BSC
.016 .024
.037 REFFFootprint (Reference)
-
.003
.009
5° 5° -
MILLIMETERS*
8
0.65 BSC
--
0.85
4.90 BSC
3.00 BSC
3.00 BSC
0.60
0.95 REF
MAX
-
-
-
-
A2
1.10
0.95
0.15
0.80
0.23
0.40 15° ­15° -
DS21896B-page 18 © 2005 Microchip Technology Inc.
MCP1630/MCP1630V
8-Lead Plastic Dual Flat No Lead Package (MC) 2x3x0.9 mm Body (DFN) – Saw Singulated
For DFN samples, contact your Microchip Sales Office for availability..
p
D
b
n
L
E
EXPOSED
PIN 1
ID INDEX
AREA
(NOTE 2)
A3
Number of Pins Pitch Overall Height Standoff
Overall Length Exposed Pad Length Overall Width Exposed Pad Width Contact Width Contact Length
TOP VIEW
Dimension Limits
(Note 3)
(Note 3)
Units
n p
A
A1
A3Contact Thickness
D
D2
E
E2
b L
A
A1
MIN
.031
.000
.055
.047 .008 .012
METAL
PAD
(NOTE 1)
INCHES
NOM
.020 BSC
.035
.079 BSC
.065
.118 BSC
.059 .010 .016
EXPOSED
TIE BAR
8
.001
D2
BOTTOM VIEW
MAX
.039 .002
.067
.061 .012 .020
*Controlling Parameter Notes:
1. BSC: Basic Dimension. Theoretically exact value shown without tolerances. See ASME Y14.5 M
2. REF: Reference Dimension, usually without tolerance, for information purposes only. See ASME Y14.5 M
Exposed pad varies according to die attach paddle size.
Package may have one or more exposed tie bars at ends. Pin 1 visual index feature may vary, but must be located within the hatched area.
JEDEC equivalent: M0-229
Drawing No. C04-123, Revised 05-05-05
2 1
MIN
0.80
1.39
1.20
0.20
0.30
E2
MILLIMETERS*
NOM
8
0.50 BSC
0.90
0.020.00
0.20 REF..008 REF.
2.00 BSC
1.65
3.00 BSC
1.50
0.25
0.40
MAX
1.00
0.05
1.70
1.55
0.30
0.50
© 2005 Microchip Technology Inc. DS21896B-page 19
MCP1630/MCP1630V
NOTES:
DS21896B-page 20 © 2005 Microchip Technology Inc.
APPENDIX A: REVISION HISTORY
Revision B (June 2005)
The following is the list of modifications:
1. Added MCP1630V device information throughout data sheet
2. Added DFN package information throughout data sheet.
3. Added Appendix A: Revision History.
Revision A (June 2004)
• Original Release of this Document .
MCP1630/MCP1630V
© 2005 Microchip Technology Inc. DS21896B-page 21
MCP1630/MCP1630V
NOTES:
DS21896B-page 22 © 2005 Microchip Technology Inc.
MCP1630/MCP1630V
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X /XX
Device
PackageTemperature
Range
Device: MCP1630: High-Speed, Microcontroller-Adaptable,
MCP1630T: High-Speed, Microcontroller-Adaptable,
Temperature Range: E = -40°C to +125°C
Package: MC *= Dual Flat, No Lead (2x3mm Body), 8-lead
MS = Plastic MSOP, 8-lead * For DFN samples, contact your Microchip Sales Office for
availability.
PWM PWM (Tape and Reel)
Examples:
a) MCP1630-E/MS: Extended Temperature, b) MCP1630T-E/MS: Tape and Reel
c) MCP1630-E/MC: Extended Temperature,
a) MCP1630V-E/MS: Extended Temperature, b) MCP1630VT-E/MS: Tape and Reel
c) MCP1630V-E/MC: Extended Temperature,
8LD MSOP package. Extended Temperature,
8LD MSOP package. 8LD DFN package.
8LD MSOP package. Extended Temperature,
8LD MSOP package. 8LD DFN package.
© 2005 Microchip Technology Inc. DS21896B-page 23
MCP1630/MCP1630V
NOTES:
DS21896B-page 24 © 2005 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are com mitted to continuously improving the code protect ion f eatures of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digit al Mill ennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WAR­RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of M icrochip’s prod ucts as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron, dsPIC, K
EELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, PowerSma rt , rfP IC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active Thermistor, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDE M, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB , rfPICD EM , Select Mode, Smart Serial, SmartTel, Total Endurance and WiperLock are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their respective companies.
© 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
®
8-bit MCUs, KEELOQ
®
code hopping
© 2005 Microchip Technology Inc. DS21896B-page 25
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
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04/20/05
DS21896B-page 26 © 2005 Microchip Technology Inc.
Mouser Electronics
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