MICROCHIP TC4426A, TC4427A, TC4428A Technical data

TC4426A/TC4427A/TC4428A
1.5A Dual High-Speed Power MOSFET Drivers
Features
• High Peak Output Current – 1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability – 1000 pF in 25 ns (typ.)
• Matched Rise, Fall and Delay Times
• Low Supply Current:
- With Logic ‘1’ Input – 1 mA (typ.)
- With Logic ‘0’ Input – 100 µA (typ.)
• Low Output Impedance – 7Ω (typ.)
• Latch-Up Protected: Wi ll Withstand 0.5A Revers e Current
• Input Will Withstand Negative Inputs Up to 5V
• ESD Protected – 4 kV
• Pin-compatible with TC426/TC427/TC428 and TC4426/TC4427/TC4428
• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN Packages
Applications
• Switch Mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
General Description
The TC4426A/TC4427A/TC4428A are improved versions of th e e a r li er T C4 4 26 /TC4427/TC44 2 8 fa mi ly of MOSFET drivers. In additi on to matched ris e and fall times, the TC4426A/TC4427A/TC4428A devices have matched leading and falling edge propagation delay times.
These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 4kV.
The TC4426A/TC4427A/TC4428A MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns. These devices provide low enough impedance s in both the on and of f states to ensure the MOSFET's intended state will not be affected, even by large transients.
Package Types
8-Pin MSOP/
PDIP/SOIC
NC
IN A
GND
IN B
1
TC4426A
2
TC4427A
3
TC4428A
4
TC4426A TC4427A
8 7 6 5
NC OUT A V
DD
OUT B
NC OUT A V
DD
OUT B
TC4428A
NC OUT A V
DD
OUT B
NC
IN A
GND
IN B
8-Pin DFN
1
TC4426A
2
TC4427A
3
TC4428A
4
Note 1: Exposed pad of the DFN package is electrically isolated.
2004 Microchip Technology Inc. DS21423E-page 1
(1)
TC4426A TC4427A
8
NC
7
OUT A
6
V
DD
5
OUT B
NC OUT A V
DD
OUT B
TC4428A
NC OUT A V
DD
OUT B
TC4426A/TC4427A/TC4428A
Functional Block Diagram
Inverting
500 µA
300 mV
V
DD
Output
Input
Effective
Input C = 12 pF
(Each Input)
GND
Note 1: TC4426A has two inverting drivers, while the TC4427A has two non-inverting
2: Ground any unused driver input.
Non-Inverting
4.7V
TC4426A/TC4427A/TC4428A
drivers. The TC4428A has one inverting and one non-inverting driver.
DS21423E-page 2 2004 Microchip Technology Inc.
TC4426A/TC4427A/TC4428A
1.0 ELECTRICAL
CHARACTERISTICS
Notice: Stresses above those listed under "Absolute Maxi­mum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated
Absolute Maximum Ratings†
Supply Voltage.....................................................+22V
in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Input Voltage, IN A or IN B
.....................................(V
+ 0.3V) to (GND – 5V)
DD
Package Power Dissipation (TA 70°C)
DFN.............................................................. Note 2
MSOP..........................................................340 mW
PDIP............................................................730 mW
SOIC............................................................470 mW
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V Logic ‘0’, Low Input Voltage V Input Current I
IH IL
IN
Output
High Output Voltage V Low Output Voltage V Output Resistance R
Peak Output Current I Latch-Up Protection
I
REV
OH OL
O
PK
Withstand Reverse Current Switching Time (Note 1) Rise Time t
Fall Time t
Delay Time t
Delay Time t
R
F
D1
D2
Power Supply
Power Supply Current I
S
Note 1: Switching times ensured by design.
2: Package power dissipation is dependent on the copper pad area on the PCB.
2.4 V ——0.8V
–1.0
–10
+1.0
+10
µA 0VVIN ≤ V
DD
VDD – 0.025 V DC Test
0.025 V DC Test —
— — —
—1.5—AV
7 7 8 8
10 11 12
9
I
= 10 mA, VDD = 18V, TA = +25°C
OUT
0°CT
-40°CT
-40°CT
DD
A
= 18V
+70°C
+85°C
A
+125°C
A
> 0.5 A Duty cycle2%, t 300 µsec
V
= 18V
DD
— — — —
— — — —
— — — —
— — — —
— —
25 27 29 30
25 27 29 30
30 33 35 38
30 33 35 38
1.0
0.1
35 40 40 40
35 40 40 40
35 40 45 50
35 40 45 50
2.0
0.2
ns TA = +25°C
0°CT
-40°CT
-40°CT
+70°C
A
+85°C
A
+125°C, Figure 4-1
A
ns TA = +25°C
0°CT
-40°CT
-40°CT
+70°C
A
+85°C
A
+125°C, Figure 4-1
A
ns TA = +25°C
0°CT
-40°CT
-40°CT
+70°C
A
+85°C
A
+125°C, Figure 4-1
A
ns TA = +25°C
0°CT
-40°CT
-40°CT
+70°C
A
+85°C
A
+125°C, Figure 4-1
A
mA VIN = 3V (Both inputs)
V
= 0V (Both inputs), VDD = 18V
IN
2004 Microchip Technology Inc. DS21423E-page 3
TC4426A/TC4427A/TC4428A
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) T Specified Temperature Range (E) T Specified Temperature Range (V) T Maximum Junction Temperature T Storage Temperature Range T
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN θ Thermal Resistance, 8L-MSOP θ Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ
A A A
J
A
JA JA JA JA
0—+7C
-40 +85 °C
-40 +125 °C
——+15C
-65 +150 °C
—33.2 —°C/W — 206 °C/W — 125 °C/W — 155 °C/W
DS21423E-page 4 2004 Microchip Technology Inc.
TC4426A/TC4427A/TC4428A

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, over operating temperature range with 4.5V VDD ≤ 18V.
100
80
60
(nsec)
40
RISE
t
20
0
CL = 2200 pF
CL = 100 pF
5.0
CL = 1500 pF
CL = 1000 pF
7.5 10.0 12.5 15.0 17.5
V
(V)
DD
= +25
T
A
CL = 470 pF

FIGURE 2-1: Rise Time vs. Supply Voltage.

110
100
90
80
70
60 50 40
Delay Time (nsec)
30 20
t
D1
t
D2
12 3 4 567 8 9
Input Amplitude (V)
CL = 1000 pF
V
= 10V
DD
°C
100
(nsec)
FALL
t
CL = 2200pF
CL = 2200 pF
80
60
40
20
CL= 100pF
CL = 100 pF
0
5.0 7.5 10.0 12.5 15.0 17.5
CL = 1500 pF
CL = 1000 pF
V
DD
(V)
= +25
T
A
CL = 470 pF
°C

FIGURE 2-4: Fall Time vs. Supply Voltage.

60
55
50
45
40
35
30
Delay Time (nsec)
25
20
0 5 10 15 20
t
D1
t
D2
V
(V)
DD
CL = 1000 pF

FIGURE 2-2: Delay Time vs. Input Amplitude.

28
CL = 1000 pF
26
V
= 18V
DD
24
22
20
Time (nsec)
18
t
RISE
16
t
FALL
14
-100 -50 0 50 100 150
TEMPERATURE (°C)

FIGURE 2-3: Rise and F all Times vs. Temperature.

FIGURE 2-5: Propagation Delay Time vs. Supply Voltage.

40
CL = 1000 pF
35
V
= 18V
DD
30
25
t
Delay Time (nsec)
D2
20
15
t
D1
-100 -50 0 50 100 150
TEMPERATURE (°C)

FIGURE 2-6: Propagation Delay Time vs. Temperature.

2004 Microchip Technology Inc. DS21423E-page 5
TC4426A/TC4427A/TC4428A
Note: Unless otherwise indicated, over operating temperature range with 4.5V VDD ≤ 18V.
30
= +125
T
25
20
()
15
DS(ON)
10
R
5
0
0 5 10 15 20
°C
A
= +25
T
°C
A
V
(V)
DD

FIGURE 2-7: Hig h-State Output Resistance.

60
50
40
(mA)
30
20
SUPPLY
I
10
0
CL = 2200 pF
0
500 1000 1500 2000 2500
CL = 1500 pF
CL = 1000 pF
FREQUENCY (kHz)
V
CL = 100 pF
DD
= 18V
30
25
= +125
20
()
15
DS(ON)
10
R
5
0
T
T
0
A
A
= +25
°C
°C
5
10
V
(V)
DD
15 20

FIGURE 2-10: Low-State Output Resistance.

60
50
40
(mA)
30
20
SUPPLY
I
10
0
0
2 MHz
500 1000 1500 2000 2500
C
V
LOAD
DD
= 18V
(pF)
900 kHz
600 kHz
200 kHz
20 kHz

FIGURE 2-8: Su ppl y Curre nt vs. Frequency.

80
70
60
50
(mA)
40
30
SUPPLY
I
20
10
0
V
= 12V
DD
500
1000
FREQUENCY (kHz)
1500 2000 2500
0
CL = 2200 pF
CL = 1500 pF
CL = 1000 pF

FIGURE 2-9: Su ppl y Curre nt vs. Frequency.

CL = 100 pF

FIGURE 2-11: Supply Current vs. Capacitive Load.

80
V
= 12V
DD
70
60
50
(mA)
40
30
SUPPLY
I
20
10
0
0
500
1000
1500 2000 2500
C
(pF)
LOAD

FIGURE 2-12: Supply Current vs. Capacitive Load.

2 MHz
900 kHz
600 kHz
200 kHz
20 kHz
DS21423E-page 6 2004 Microchip Technology Inc.
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