MICROCHIP TC4426A, TC4427A, TC4428A Technical data

TC4426A/TC4427A/TC4428A

1.5A Dual High-Speed Power MOSFET Drivers

Features

• High Peak Output Current – 1.5A

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• High Capacitive Load Drive Capability – 1000 pF in 25 ns (typ.)

• Short Delay Times – 30 ns (typ.)

• Matched Rise, Fall and Delay Times

• Low Supply Current:

- With Logic ‘1’ Input – 1 mA (typ.)

- With Logic ‘0’ Input – 100 µA (typ.)

• Low Output Impedance – 7Ω (typ.)

• Latch-Up Protected: Wi ll Withstand 0.5A Revers e Current

• Input Will Withstand Negative Inputs Up to 5V

• ESD Protected – 4 kV

• Pin-compatible with TC426/TC427/TC428 and TC4426/TC4427/TC4428

• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN Packages

Applications

• Switch Mode Power Supplies

• Line Drivers

• Pulse Transformer Drive

General Description

The TC4426A/TC4427A/TC4428A are improved versions of th e e a r li er T C4 4 26 /TC4427/TC44 2 8 fa mi ly of MOSFET drivers. In additi on to matched ris e and fall times, the TC4426A/TC4427A/TC4428A devices have matched leading and falling edge propagation delay times.

These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 4kV.

The TC4426A/TC4427A/TC4428A MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns. These devices provide low enough impedance s in both the on and of f states to ensure the MOSFET's intended state will not be affected, even by large transients.

Package Types

8-Pin MSOP/

PDIP/SOIC

NC

IN A

GND

IN B

1

TC4426A

2

TC4427A

3

TC4428A

4

TC4426A TC4427A

8 7 6 5

NC OUT A V

DD

OUT B

NC OUT A V

DD

OUT B

TC4428A

NC OUT A V

DD

OUT B

NC

IN A

GND

IN B

8-Pin DFN

1

TC4426A

2

TC4427A

3

TC4428A

4

Note 1: Exposed pad of the DFN package is electrically isolated.

 2004 Microchip Technology Inc. DS21423E-page 1

(1)

TC4426A TC4427A

8

NC

7

OUT A

6

V

DD

5

OUT B

NC OUT A V

DD

OUT B

TC4428A

NC OUT A V

DD

OUT B

TC4426A/TC4427A/TC4428A

Functional Block Diagram

Inverting

500 µA

300 mV

V

DD

Output

Input

Effective

Input C = 12 pF

(Each Input)

GND

Note 1: TC4426A has two inverting drivers, while the TC4427A has two non-inverting

2: Ground any unused driver input.

Non-Inverting

4.7V

TC4426A/TC4427A/TC4428A

drivers. The TC4428A has one inverting and one non-inverting driver.

DS21423E-page 2  2004 Microchip Technology Inc.

TC4426A/TC4427A/TC4428A

1.0 ELECTRICAL

CHARACTERISTICS

† Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated

Absolute Maximum Ratings†

Supply Voltage.....................................................+22V

in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

Input Voltage, IN A or IN B

.....................................(V

+ 0.3V) to (GND – 5V)

DD

Package Power Dissipation (TA ≤ 70°C)

DFN.............................................................. Note 2

MSOP..........................................................340 mW

PDIP............................................................730 mW

SOIC............................................................470 mW

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Input

Logic ‘1’, High Input Voltage V Logic ‘0’, Low Input Voltage V Input Current I

IH IL

IN

Output

High Output Voltage V Low Output Voltage V Output Resistance R

Peak Output Current I Latch-Up Protection

I

REV

OH OL

O

PK

Withstand Reverse Current Switching Time (Note 1) Rise Time t

Fall Time t

Delay Time t

R

F

D1

D2

Power Supply

Power Supply Current I

S

Note 1: Switching times ensured by design.

2: Package power dissipation is dependent on the copper pad area on the PCB.

2.4 — — V ——0.8V

–1.0

–10

—

+1.0

—

+10

µA 0V ≤ VIN ≤ V

DD

VDD – 0.025 — — V DC Test

— — 0.025 V DC Test —

— — —

—1.5—AV

7 7 8 8

10 11 12

9

Ω I

= 10 mA, VDD = 18V, TA = +25°C

OUT

0°C ≤ T

-40°C ≤ T

DD

A

= 18V

≤ +70°C

≤ +85°C

A

≤ +125°C

A

— > 0.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec

V

= 18V

DD

— — — —

— —

25 27 29 30

30 33 35 38

1.0

0.1

35 40 40 40

35 40 45 50

2.0

0.2

ns TA = +25°C

0°C ≤ T

-40°C ≤ T

≤ +70°C

A

≤ +85°C

A

≤ +125°C, Figure 4-1

A

ns TA = +25°C

0°C ≤ T

-40°C ≤ T

≤ +70°C

A

≤ +85°C

A

≤ +125°C, Figure 4-1

A

ns TA = +25°C

0°C ≤ T

-40°C ≤ T

≤ +70°C

A

≤ +85°C

A

≤ +125°C, Figure 4-1

A

ns TA = +25°C

0°C ≤ T

-40°C ≤ T

≤ +70°C

A

≤ +85°C

A

≤ +125°C, Figure 4-1

A

mA VIN = 3V (Both inputs)

V

= 0V (Both inputs), VDD = 18V

IN

 2004 Microchip Technology Inc. DS21423E-page 3

TC4426A/TC4427A/TC4428A

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range (C) T Specified Temperature Range (E) T Specified Temperature Range (V) T Maximum Junction Temperature T Storage Temperature Range T

Package Thermal Resistances

Thermal Resistance, 8L-6x5 DFN θ Thermal Resistance, 8L-MSOP θ Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ

A A A

J

A

JA JA JA JA

0—+70°C

-40 — +85 °C

-40 — +125 °C

——+150°C

-65 — +150 °C

—33.2 —°C/W — 206 — °C/W — 125 — °C/W — 155 — °C/W

DS21423E-page 4  2004 Microchip Technology Inc.

TC4426A/TC4427A/TC4428A

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, over operating temperature range with 4.5V ≤ VDD ≤ 18V.

100

80

60

(nsec)

40

RISE

t

20

0

CL = 2200 pF

CL = 100 pF

5.0

CL = 1500 pF

CL = 1000 pF

7.5 10.0 12.5 15.0 17.5

V

(V)

DD

= +25

T

A

CL = 470 pF

FIGURE 2-1: Rise Time vs. Supply Voltage.

110

100

90

80

70

60 50 40

Delay Time (nsec)

30 20

t

D1

t

D2

12 3 4 567 8 9

Input Amplitude (V)

CL = 1000 pF

V

= 10V

DD

°C

100

(nsec)

FALL

t

CL = 2200pF

CL = 2200 pF

80

60

40

20

CL= 100pF

CL = 100 pF

0

5.0 7.5 10.0 12.5 15.0 17.5

CL = 1500 pF

CL = 1000 pF

V

DD

(V)

= +25

T

A

CL = 470 pF

°C

FIGURE 2-4: Fall Time vs. Supply Voltage.

60

55

50

45

40

35

30

Delay Time (nsec)

25

20

0 5 10 15 20

t

D1

t

D2

V

(V)

DD

CL = 1000 pF

FIGURE 2-2: Delay Time vs. Input Amplitude.

28

CL = 1000 pF

26

V

= 18V

DD

24

22

20

Time (nsec)

18

t

RISE

16

t

FALL

14

-100 -50 0 50 100 150

TEMPERATURE (°C)

FIGURE 2-3: Rise and F all Times vs. Temperature.

FIGURE 2-5: Propagation Delay Time vs. Supply Voltage.

40

CL = 1000 pF

35

V

= 18V

DD

30

25

t

Delay Time (nsec)

D2

20

15

t

D1

-100 -50 0 50 100 150

TEMPERATURE (°C)

FIGURE 2-6: Propagation Delay Time vs. Temperature.

 2004 Microchip Technology Inc. DS21423E-page 5

TC4426A/TC4427A/TC4428A

Note: Unless otherwise indicated, over operating temperature range with 4.5V ≤ VDD ≤ 18V.

30

= +125

T

25

20

(Ω)

15

DS(ON)

10

R

5

0

0 5 10 15 20

°C

A

= +25

T

°C

A

V

(V)

DD

FIGURE 2-7: Hig h-State Output Resistance.

60

50

40

(mA)

30

20

SUPPLY

I

10

0

CL = 2200 pF

0

500 1000 1500 2000 2500

CL = 1500 pF

CL = 1000 pF

FREQUENCY (kHz)

V

CL = 100 pF

DD

= 18V

30

25

= +125

20

(Ω)

15

DS(ON)

10

R

5

0

T

0

A

= +25

°C

5

10

V

(V)

DD

15 20

FIGURE 2-10: Low-State Output Resistance.

60

50

40

(mA)

30

20

SUPPLY

I

10

0

2 MHz

500 1000 1500 2000 2500

C

V

LOAD

DD

= 18V

(pF)

900 kHz

600 kHz

200 kHz

20 kHz

FIGURE 2-8: Su ppl y Curre nt vs. Frequency.

80

70

60

50

(mA)

40

30

SUPPLY

I

20

10

0

V

= 12V

DD

500

1000

FREQUENCY (kHz)

1500 2000 2500

0

CL = 2200 pF

CL = 1500 pF

CL = 1000 pF

FIGURE 2-9: Su ppl y Curre nt vs. Frequency.

CL = 100 pF

FIGURE 2-11: Supply Current vs. Capacitive Load.

80

V

= 12V

DD

70

60

50

(mA)

40

30

SUPPLY

I

20

10

0

500

1000

1500 2000 2500

C

(pF)

LOAD

FIGURE 2-12: Supply Current vs. Capacitive Load.

2 MHz

900 kHz

600 kHz

200 kHz

20 kHz

DS21423E-page 6  2004 Microchip Technology Inc.