MICROCHIP TC4426, TC4427, TC4428 Technical data

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1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4426
TC4427
TC4428

FEATURES

■ High Peak Output Current ............................... 1.5A

■ Wide Operating Range ..........................4.5V to 18V

■ High Capacitive Load

Drive Capability .......................... 1000pF in 25nsec

■ Short Delay Time .............................. < 40nsec Typ.

■ Consistent Delay Times With Changes in

Supply Voltage

■ Low Supply Current

— With Logic “1” Input .................................... 4mA

— With Logic “0” Input ................................. 400µA

■ Low Output Impedance ....................................... 7Ω

■ Latch-Up Protected ............. Will Withstand >0.5A

Reverse Current................................. Down to – 5V

■ Input Will Withstand Negative Inputs

■ ESD Protected.....................................................4kV

■ Pinout Same as TC426/TC427/TC428

ORDERING INFORMATION

Temperature

Part No. Package Range

TC4426COA 8-Pin SOIC 0°C to +70°C
TC4426CPA 8-Pin Plastic DIP 0°C to +70°C
TC4426EOA 8-Pin SOIC – 40°C to +85°C
TC4426EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4426MJA 8-Pin CerDIP – 55°C to +125°C

TC4427COA 8-Pin SOIC 0°C to +70°C
TC4427CPA 8-Pin Plastic DIP 0°C to +70°C
TC4427EOA 8-Pin SOIC – 40°C to +85°C
TC4427EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4427MJA 8-Pin CerDIP – 55°C to +125°C

TC4428COA 8-Pin SOIC 0°C to +70°C
TC4428CPA 8-Pin Plastic DIP 0°C to +70°C
TC4428EOA 8-Pin SOIC – 40°C to +85°C
TC4428EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4428MJA 8-Pin CerDIP – 55°C to +125°C

GENERAL DESCRIPTION

The TC4426/4427/4428 are improved versions of the
earlier TC426/427/428 family of buffer/drivers (with which
they are pin compatible). They will not latch up under any
conditions within their power and voltage ratings. They are
not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4kV of
electrostatic discharge.

As MOSFET drivers, the TC4426/4427/4428 can easily
switch 1000pF gate capacitances in under 30nsec, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.

Other compatible drivers are the TC4426A/27A/28A.
These drivers have matched input to output leading edge
and falling edge delays, tD1 and tD2, for processing short
duration pulses in the 25 nsec range. They are pin compat­ible with the TC4426/27/28.

FUNCTIONAL BLOCK DIAGRAM

V

INVERTING

OUTPUTS

300 mV

NONINVERTING

OUTPUTS

INPUT

GND

EFFECTIVE INPUT

C = 12 pF

NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers.

2. TC4428 has one inverting and one noninverting driver.

3. Ground any unused driver input.

4.7V

TC4426/TC4427/TC4428

DD

OUTPUT

© 2001 Microchip Technology Inc. DS21422A

TC4426/7/8-8 10/21/96

TC4426
TC4427
TC4428

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +22V

Input Voltage, IN A or IN B. (VDD + 0.3V) to (GND – 5.0V)

Maximum Chip Temperature.................................+150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R

PIN CONFIGURATIONS

ELECTRICAL CHARACTERISTICS: T

................................................ 150°C/W

θJ-A

.................................................. 50°C/W

θJ-C

................................................... 125°C/W

θJ-A

..................................................... 42°C/W

θJ-C

................................................... 155°C/W

θJ-A

..................................................... 45°C/W

θJ-C

1

NC

2

IN A

GND

IN B

NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.

TC4426

3
4

2,4 7,5

INVERTING

8
7
6
5

NC
OUT A

V

DD

OUT B

NC

1
2

IN A

3

GND

4

IN B

2,4 7,5

NONINVERTING

= +25°C with 4.5V ≤ V

A

Operating Temperature Range

C Version...............................................0°C to +70°C

E Version ..........................................– 40°C to +85°C

M Version .......................................– 55°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic .............................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

NC

8

OUT A

7

V

6

DD

5

OUT B

7

5

TC4427

8
7
6
5

NC
OUT A
V

DD

OUT B

NC

1
2

IN A

GND

IN B

≤ 18V, unless otherwise specified.

DD

TC4428

3
4

2

4

DIFFERENTIAL

Symbol Parameter Test Conditions Min Typ Max Unit

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

I

PK

I

REV

Switching Time (Note 1)
t

R

t

F

t

D1

t

D2

Power Supply

I

S

NOTE: 1. Switching times are guaranteed by design.

TC4426/7/8-8 10/21/96

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 1 — 1 µA

High Output Voltage VDD – 0.025 — — V
Low Output Voltage — — 0.025 V
Output Resistance VDD = 18V, IO = 10mA — 7 10 Ω
Peak Output Current Duty Cycle ≤ 2%, t ≤ 30µsec — 1.5 — A
Latch-Up Protection Duty Cycle ≤ 2% > 0.5 — — A

Withstand Reverse Current t ≤ 30 µsec

Rise Time Figure 1 — 19 30 nsec
Fall Time Figure 1 — 19 30 nsec
Delay Time Figure 1 — 20 30 nsec
Delay Time Figure 1 — 40 50 nsec

Power Supply Current VIN = 3V (Both Inputs) — — 4.5 mA

VIN = 0V (Both Inputs) — — 0.4 mA

2

© 2001 Microchip Technology Inc. DS21422A

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

+5V

INPUT

10%

90%

10%

90%

10%

90%

V

DD

OUTPUT

t

D1

0V

90%

10%

10%

10%

t

F

90%

+5V

INPUT

V

DD

OUTPUT

0V

0V

0V

90%

OUTPUT

INPUT

0.1 µF

CL = 1000 pF

4.7 µF

VDD= 18V

Inverting Driver

3

2,4

5,7

6

Noninverting Driver

t

F

t

D2

t

R

t

R

t

D1

t

D2

INPUT: 100 kHz, square wave,

t

RISE

= t

FALL

≤ 10ns

TC4426
TC4427

TC4428

ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range with 4.5V ≤

VDD ≤ 18V, unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

I

PK

I

REV

Switching Time (Note 1)
t

R

t

F

t

D1

t

D2

Power Supply

I

S

NOTE: 1. Switching times are guaranteed by design.

Logic 1 High Input Voltage 2.4 ——V
Logic 0 Low Input Voltage ——0.8 V
Input Current 0V ≤ VIN ≤ V

DD

High Output Voltage V

– 10 — 10 µA

– 0.025 ——V

DD

Low Output Voltage ——0.025 V
Output Resistance VDD = 18V, IO = 10mA — 912Ω
Peak Output Current Duty Cycle ≤ 2%, t ≤ 300µsec — 1.5 — A
Latch-Up Protection Duty Cycle≤ 2% > 0.5 ——A

Withstand Reverse Current t ≤ 300µsec

Rise Time Figure 1 ——40 nsec
Fall Time Figure 1 ——40 nsec
Delay Time Figure 1 ——40 nsec
Delay Time Figure 1 ——60 nsec

Power Supply Current VIN = 3V (Both Inputs) ——8mA

VIN = 0V (Both Inputs) ——0.6 mA

MAX. POWER (mW)

© 2001 Microchip Technology Inc. DS21422A

A • sec

1600

1400

1200

1000

800

600

400
200

10

10

–8

9
8
7
6

5
4

3

2

–9

4

0

10 20

0

Crossover Energy Loss

Thermal Derating Curves

8 Pin CerDIP

8 Pin SOIC

8 Pin DIP

30 40

50 60

AMBIENT TEMPERATURE (°C)

V

DD

70

80 90 100 110 120

186 8 10 12 14 16

Figure 1. Switching Time Test Circuit

NOTE: The values on this graph represent the loss seen by both drivers in a package

during one complete cycle. For a single driver, divide the stated values by 2. For a
single transition of a single driver, divide the stated value by 4.

3

TC4426/7/8-8 10/21/96

TC4426
TC4427
TC4428

TYPICAL CHARACTERISTICS

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

Rise Time vs. Supply Voltage

100

2200 pF

80

1500 pF

60

1000 pF

(nsec)

RISE

40

t

470 pF

20

100 pF

0

4681012

Rise TIme vs. Capacitive Load

100

TA = 25°C TA = 25°C

80

60

(nsec)

RISE

40

t

V

DD

TA = 25°C

14 16 18

5V

10V

15V

Fall Time vs. Supply Voltage

100

2200 pF

80

1500 pF

60

(nsec)

1000 pF

FALL

t

40

470 pF

20

100 pF

0

4681012

Fall TIme vs. Capacitive Load

100

80

60

(nsec)

FALL

40

t

T

= 25°C

A

14 16 18

V

DD

5V

10V

15V

20

0

100 1000 10,000

60

50

40

30

TIME (nsec)

20

10

–55 –35 5 25 45 65 85 105 125–15

TC4426/7/8-8 10/21/96

C (pF)

LOAD

Rise and Fall Times vs. Temperature

C = 1000 pF

LOAD

V = 17.5V

DD

t

FALL

t

RISE

TEMPERATURE (°C)

60

50

40

30

DELAY TIME (nsec)

20

10

4

20

0

100 1000 10,000

C (pF)

LOAD

Propagation Delay vs. Supply Voltage

C = 1000 pF

D2

t

4681012

LOAD

TA = 25°C

t

D1

V

DD

© 2001 Microchip Technology Inc. DS21422A

14 16 18

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TYPICAL CHARACTERISTICS (Cont.)

Effect of Input Amplitude on Delay Time Propagation Delay Time vs. Temperature

60

50

40

30

C = 1000 pF

LOAD

V = 10V

DD

t

D2

60

V = 18V

DD

V = 1000 pF

LOAD

50

40

30

t

D1

TC4426
TC4427

TC4428

t

D2

DELAY TIME (nsec)

20

10

0246810

t

D1

V

DRIVE

(V)

Quiescent Supply Current vs. Voltage

T = +25°C

A

BOTH INPUTS = 1

1

QUIESCENT

I (mA)

BOTH INPUTS = 0

0.1
4

V

DD

DELAY TIME (nsec)

20

10

–55 –35 –15 5 25 45 65 85 105 125

TA (°C)

Quiescent Supply Current vs. Temperature

4.0

V = 18V

DD

3.5

(mA)

3.0

QUIESCENT

I

2.5

2.0

186 8 10 12 14 16

–55 –35 –15 5 25 45 65 85 105 125

BOTH INPUTS = 1

TA (°C)

High-State Output Resistance

25

20

(Ω)

15

DS(ON)

R

10

8

5

4681012

© 2001 Microchip Technology Inc. DS21422A

WORST CASE @ TJ = +150°C

TYP @ TA = +25°C

V

DD

14 16 18

Low-State Output Resistance

25

20

(Ω)

15

DS(ON)

R

10

8

5

4681012

5

WORST CASE @ TJ = +150°C

TYP @ TA = +25°C

14 16 18

V

DD

TC4426/7/8-8 10/21/96

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4426
TC4427
TC4428

SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)

Supply Current vs. Capacitive Load

60

V = 18V

DD

50

40

(mA)

30

SUPPLY

I

20

10

0

100 1000 10,000

2 MHz

C (pF)

LOAD

900 kHz

600 kHz

200 kHz

20 kHz

Supply Current vs. Capacitive Load

60

2 MHz

900 kHz

600 kHz

50

40

(mA)

30

SUPPLY

I

20

V = 12V

DD

Supply Current vs. Frequency

60

V = 18V

DD

50

40

(mA)

30

SUPPLY

I

20

10

0

10 100 1000

FREQUENCY (kHz)

Supply Current vs. Frequency

60

V = 12V

50

40

(mA)

30

SUPPLY

20

I

DD

1000 pF

2200 pF

100 pF

2200 pF

1000 pF

100 pF

10

0

100 1000 10,000

Supply Current vs. Capacitive Load

60

50

40

(mA)

30

SUPPLY

I

20

10

0

100 1000 10,000

TC4426/7/8-8 10/21/96

V = 6V

DD

C (pF)

LOAD

C (pF)

LOAD

200 kHz
20 kHz

2 MHz

900 kHz

600 kHz
200 kHz
20 kHz

10

0

10 100 1000

FREQUENCY (kHz)

Supply Current vs. Frequency

60

V = 6V

50

40

(mA)

30

SUPPLY

I

20

10

0

6

DD

2200 pF

1000 pF

100 pF

10 100 1000

FREQUENCY (kHz)

© 2001 Microchip Technology Inc. DS21422A

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

PACKAGE DIMENSIONS

TC4426
TC4427

TC4428

.055 (1.40) MAX.

.200 (5.08)
.160 (4.06)

.200 (5.08)
.125 (3.18)

.110 (2.79)
.090 (2.29)

.400 (10.16)

.370 (9.40)

.065 (1.65)
.045 (1.14)

8-Pin CerDIP

.300 (7.62)
.230 (5.84)

.040 (1.02)
.020 (0.51)

.020 (0.51)
.016 (0.41)

PIN 1

.020 (0.51) MIN.

.150 (3.81)

MIN.

.015 (0.38)
.008 (0.20)

.320 (8.13)
.290 (7.37)

3° MIN.

.400 (10.16)

.320 (8.13)

.045 (1.14)
.030 (0.76)

.200 (5.08)
.140 (3.56)

.150 (3.81)
.115 (2.92)

.400 (10.16)

.348 (8.84)

.110 (2.79)
.090 (2.29)

8-Pin Plastic DIP

.260 (6.60)
.240 (6.10)

.070 (1.78)
.040 (1.02)

.022 (0.56)
.015 (0.38)

PIN 1

.040 (1.02)
.020 (0.51)

.015 (0.38)
.008 (0.20)

.310 (7.87)
.290 (7.37)

3° MIN.

.400 (10.16)

.310 (7.87)

Dimensions: inches (mm)

© 2001 Microchip Technology Inc. DS21422A

7

TC4426/7/8-8 10/21/96

TC4426
TC4427
TC4428

PACKAGE DIMENSIONS Cont.)

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

8-Pin SOIC

.050 (1.27) TYP.

.197 (5.00)
.189 (4.80)

.020 (0.51)
.013 (0.33)

.157 (3.99)
.150 (3.81)

.010 (0.25)
.004 (0.10)

.244 (6.20)
.228 (5.79)

.069 (1.75)
.053 (1.35)

8° MAX.

.010 (0.25)
.007 (0.18)

.050 (1.27)
.016 (0.40)

Dimensions: inches (mm)

TC4426/7/8-8 10/21/96

8

© 2001 Microchip Technology Inc. DS21422A

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

W

ORLDWIDE SALES AND SERVICE

TC4426
TC4427

TC4428

AMERICAS

Corporate Office

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All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 1/01 Printed on recycled paper.

Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by
updates. It is your re sponsib ility to en sure that your applicatio n mee ts with your specifica tions. No repr esentation or warra nty is given and no liability is
assumed by Micro chip Technology Incorporated with re spec t to the accur acy or use of such infor mation, or infrin gemen t of patents or other intel lectual
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ASIA/PACIFIC

(continued)

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01/09/01

© 2001 Microchip Technology Inc. DS21422A

9

TC4426/7/8-8 10/21/96