MICROCHIP TC4420, TC4429 Technical data

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TC4420/TC4429

6A High-Speed MOSFET Drivers

Features

• Latch-Up Protected: Will Withstand >1.5A
Reverse Output Current

• Logic Input Will Withstand Negative Swing Up To
5V

• ESD Protected: 4 kV

• Matched Rise and Fall Times:

- 25 ns (2500 pF load)

• High Peak Output Current: 6A

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• High Capacitive Load Drive Capability: 10,000pF

• Short Delay Time: 55 ns (typ.)

• CMOS/TTL Compatible Input

• Low Supply Current With Logic ‘1’ Input:

-450µA (typ.)

• Low Output Impedance: 2.5Ω

• Output Voltage Swing to Within 25 mV of Ground
or V

DD

• Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN
Packages

Applications

General Description

The TC4420/TC4429 are 6A (peak), single-output
MOSFET drivers. The TC4429 is an inverting driver
(pin-compatible with the TC429), while the TC4420 is a
non-inverting driver. These drivers are fabricated in
CMOS for lower power and more efficient operation
versus bipolar drivers.

Both devices have TTL/CMOS compatible inpu ts that
can be driven as high a s V
without upset or damage to th e device. T his elimi nates
the need for external level-shifting circuitry and its
associated cost and size. The output swing is rail-to-rail,
ensuring better dri ve voltage margin, espe cially during
power-up/power-down sequencing. Propagational
delay time is only 55 ns (typ.) and the output rise and fall
times are only 25 ns (typ.) into 2500 pF across the
usable power supply range.

Unlike other drivers, the TC4420/TC4429 are virtually
latch-up proof. They replace three or more discrete
components, saving PCB area, parts and improving
overall system reliability.

+ 0.3V or as low as –5V

DD

• Switch-Mode Power Supp lie s

• Motor Controls

• Pulse Transformer Driver

• Class D Switching Amplifiers

Package Types

8-Pin CERDIP/

(1)

TC4420 TC4429

PDIP/SOIC

V

1

V

1

DD

TC4420

2

INPUT

TC4429

3

NC

4

GND

Note 1: Duplicate pins must both be connected for proper operation.

2: Exposed pad of the DFN package is electrically isolated.

8
7
6
5

V

DD

OUTPUT
OUTPUT
GND

V

DD

OUTPUT
OUTPUT
GND

DD

INPUT

NC

GND

2
3
4

8-Pin DFN

TC4420
TC4429

(2)

TC4420 TC4429

V

8

DD

7

OUTPUT

6

OUTPUT

5

GND

V

DD

OUTPUT
OUTPUT
GND

5-Pin TO-220

Tab is
Common
to V

TC4420
TC4429

DD

V

GND

GND

INPUT

OUTPUT

DD

 2004 Microchip Technology Inc. DS21419C-page 1

TC4420/TC4429

Functional Block Diagram

500 µA

300 mV

TC4429

Inverting

V

DD

Output

Input

GND

TC4420

Non-Inverting

4.7V

Effective

Input

C = 38 pF

DS21419C-page 2  2004 Microchip Technology Inc.

TC4420/TC4429

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

Supply Voltage.....................................................+20V

† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.

Input Voltage..................................– 5V to VDD + 0.3V

Input Current (VIN > VDD)...................................50 mA

Power Dissipation (T

≤ 70°C)

A

5-Pin TO-220....................................................1.6W

CERDIP.......................................................800 mW

DFN............................................ ...................Note 2

PDIP............................................................730 mW

SOIC............................................................470 mW

Package Power Dissipation (T

≤ 25°C)

A

5-Pin TO-220 (With Heatsink) ........................12.5W

Thermal Impedances (To Case)

5-Pin TO-220 R

......................................10°C/W

θJ-C

DC CHARACTERISTICS

Electrical Specifications: Unless other wise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Input

Logic ‘1’, High Input
Voltage

Logic ‘0’, Low Input Voltage V
Input Voltage Range V
Input Current I

Output

High Output Voltage V
Low Output Voltage V
Output Resistanc e, Hi gh R
Output Resistanc e, Low R
Peak Output Current I
Latch-Up Protection

Withstand Reverse Current
Switching Time (Note 1)
Rise Time t
Fall Time t
Delay Time t
Delay Time t

Power Supply

Power Supply Current I

Operating Input Voltage V

Note 1: Switching times ensured by design.

2: Package power dissipation is dependent on the copper pad area on the PCB.

V

I

REV

IH

IL
IN

IN

OH
OL
OH

OL

PK

2.4 1.8 — V

—1.30.8V
–5 — VDD+0.3 V

–10 — +10 µA 0V ≤ VIN ≤ V

VDD – 0.025 — — V DC TEST

— — 0.025 V DC TEST
—2.12.8Ω I
—1.52.5Ω I
—6.0—AV
— > 1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec

R

F
D1
D2

S

DD

—2535nsFigure 4-1, CL = 2,500 pF
—2535nsFigure 4-1, CL = 2,500 pF
—5575nsFigure 4-1
—5575nsFigure 4-1

—
—

0.45
55

1.5

150

mAµAVIN = 3V

4.5 — 18 V

OUT
OUT

V

DD

= 0V

IN

DD

= 10 mA, VDD = 18V
= 10 mA, VDD = 18V

= 18V

 2004 Microchip Technology Inc. DS21419C-page 3

TC4420/TC4429

DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)

Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Input

Logic ‘1’, High Input
Voltage

Logic ‘0’, Low Input Voltage V
Input Voltage Range V
Input Current I

Output

High Output Voltage V
Low Output Voltage V
Output Resistanc e, Hi gh R
Output Resistanc e, Low R
Switching Time (Note 1)
Rise Time t
Fall Time t
Delay Time t
Delay Time t

Power Supply

Power Supply Current I

Operating Input Voltage V
Note 1: Switching times ensured by design.

V

IH

IL
IN

IN

OH
OL
OH

OL

R

F
D1
D2

S

DD

2.4 — — V

——0.8V
–5 — VDD + 0.3 V

–10 — +10 µA 0V ≤ VIN ≤ V

VDD – 0.025 — — V DC TEST

— — 0.025 V DC TEST
—35Ω I
—2.35Ω I

—3260nsFigure 4-1, CL = 2,500 pF
—3460nsFigure 4-1, CL = 2,500 pF
—50100nsFigure 4-1
—65100nsFigure 4-1

—
—

0.45
60

3

400

4.5 — 18 V

= 10 mA, VDD = 18V

OUT

= 10 mA, VDD = 18V

OUT

mAµAVIN = 3V

V

= 0V

IN

DD

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range (C) T
Specified Temperature Range (I) T
Specified Temperature Range (E) T
Specified Temperature Range (V) T
Maximum Junction Temperature T
Storage Temperature Range T

Package Thermal Resistances

Thermal Resistance, 5L-TO-220 θ
Thermal Resistance, 8L-CERDIP θ
Thermal Resistance, 8L-6x5 DFN θ

Thermal Resistance, 8L-PDIP θ
Thermal Resistance, 8L-SOIC θ

A
A
A
A
J
A

JA
JA
JA

JA
JA

0—+70°C
–25 — +85 °C
–40 — +85 °C
–40 — +125 °C

— — +150 °C

–65 — +150 °C

—71—°C/W
—150—°C/W
— 33.2 — °C/W Typical four-layer board

—125—°C/W
—155—°C/W

≤ 18V.

DD

with vias to ground plane.

DS21419C-page 4  2004 Microchip Technology Inc.

TC4420/TC4429

0

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and ta bles provided followi ng thi s n ote are a statistical s umm ar y based on a limite d n um ber of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

120

100

C = 10,000 pF

80

60

Time (nsec)

40

20

0

579111315

Supply Voltage (V)

L

C = 4700 pF

L

C = 2200 pF

L

FIGURE 2-1: Rise Time vs. Supply
Voltage.

100

80

60

V = 5V

1000

DD

V = 12V

DD

Capcitive Load (pF)

V = 18V

DD

10,000

40

Time (nsec)

20

10

100

80

C = 10,000 pF

60

40

Time (nsec)

20

0

57 9111315

Supply Voltage (V)

L

C = 4700 pF

L

C = 2200 pF

L

FIGURE 2-4: Fall Time vs. Supply
Voltage.

100

80

60

40

V = 5V

DD

V = 12V

Time (nsec)

20

10

1000

DD

Capacitive Load (pF)

V = 18V

DD

10,00

FIGURE 2-2: Rise Time vs. Capacitive
Load.

50

C = 2200 pF

L

V = 18V

DD

40

t

D2

30

20

Delay Time (nsec)

10

0

t

D1

–60 –20 20 60 100

TA (°C)

140

FIGURE 2-3: Propagation Delay Time vs.
Temperature.

FIGURE 2-5: Fall Time vs. Capacitive
Load.

84

V = 15V

DD

70

56

42

28

Supply Current (mA)

14

0

0 100 1000

500 kHz

200 kHz

Capacitive Load (pF)

20 kHz

10,000

FIGURE 2-6: Supply Current vs.
Capacitive Load.

 2004 Microchip Technology Inc. DS21419C-page 5

TC4420/TC4429

5

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

50

C = 2200 pF

L

V = 18V

DD

40

30

20

Time (nsec)

10

0

t

FALL

t

RISE

–60 –20 20 60 100

TA (°C)

140

FIGURE 2-7: Rise and Fall Times vs.
Temperature.

65

60

55

t

50

45

Delay Time (nsec)

40

35

4 6 81012141618

D2

t

D1

Supply Voltage (V)

5

100 mA

10 mA

5913

7111

50 mA

Supply Voltage (V)

OUT

R ( )Ω

4

3

2

FIGURE 2-10: High-State Output
Resistance vs Supply Voltage.

200

Load = 2200 pF

160

120

Input 2.4V

Input 3V

80

Delay Time (nsec)

40

0

Input 5V

Input 8V and 10V

567 11 13

8 9 10 12 14

V (V)

DD

15

FIGURE 2-8: Propagation Delay Time vs.
Supply Voltage.

1000

C = 2200 pF

L

100

10

Supply Current (mA)

0

0 100 1000

Frequency (kHz)

18V

10V

5V

10,000

FIGURE 2-9: Supply Current vs.
Frequency.

FIGURE 2-11: Effect of Input Amplitude on
Propagation Delay.

2.5

2

OUT

R ( )Ω

1.5

1

5913

71115

Supply Voltage (V)

100 mA

50 mA

10 mA

FIGURE 2-12: Low-State Output
Resistance vs. Supply Voltage.

DS21419C-page 6  2004 Microchip Technology Inc.