MICROCHIP TC4420, TC4429 Technical data

6A HIGH-SPEED MOSFET DRIVERS
TC4420 TC4429
Latch-Up Protected ............ Will Withstand >1.5A
Reverse Output Current
Logic Input Will Withstand Negative Swing Up
to 5V
ESD Protected.....................................................4kV
Matched Rise and Fall Times ......................25nsec
High Peak Output Current ......................... 6A Peak
Wide Operating Range ..........................4.5V to 18V
High Capacitive Load Drive ......................10,000pF
Short Delay Time ................................. 55nsec Typ.
Logic High Input, Any Voltage .............2.4V to V
DD
Low Supply Current With Logic "1" Input ... 450µA
Low Output Impedance .................................... 2.5
Output Voltage Swing to Within 25mV of Ground
or V
DD
APPLICATIONS
Switch-Mode Power Supplies
Motor Controls
Pulse Transformer Driver
Class D Switching Amplifiers
PIN CONFIGURATIONS
TO-220-5
Tab is Connected to V
DD
OUTPUT
INPUT
TC4420 TC4429
GND
INPUT
DD
V
GND
FUNCTIONAL BLOCK DIAGRAM
8-Pin DIP
V
18
DD
27
TC4420
36
NC
TC4429
45
NOTE: Duplicate pins must both be connected for proper operation.
500 µA
300 mV
V
DD
OUTPUT OUTPUT GNDGND
TC4429
8-Pin SOIC
V
18
DD
27
INPUT
TC4420
36
NC
TC4429
45
V
DD
OUTPUT OUTPUT GNDGND
V
DD
OUTPUT
GENERAL DESCRIPTION
The TC4420/4429 are 6A (peak), single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers.
Both devices have TTL-compatible inputs, which can be driven as high as VDD + 0.3V or as low as – 5V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55nsec (typ.) and the output rise and fall times are only 25nsec (typ.) into 2500pF across the usable power supply range.
Unlike other drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete compo­nents saving PCB area, parts and improving overall system reliability.
ORDERING INFORMATION
Temperature
Part No. Logic Package Range
TC4420CAT Noninverting 5-Pin TO-220 0°C to +70°C TC4420COA Noninverting 8-Pin SOIC 0°C to +70°C TC4420CPA Noninverting 8-Pin PDIP 0°C to +70°C TC4420EOA Noninverting 8-Pin SOIC – 40°C to +85°C TC4420EPA Noninverting 8-Pin PDIP – 40°C to +85°C TC4420IJA Noninverting 8-Pin CerDIP –25°C to +85°C TC4420MJA Noninverting 8-Pin CerDIP – 55°C to +125°C
TC4429CAT Inverting 5-Pin TO-220 0°C to +70°C TC4429COA Inverting 8-Pin SOIC 0°C to +70°C TC4429CPA Inverting 8-Pin PDIP 0°C to +70°C TC4429EOA Inverting 8-Pin SOIC – 40°C to +85°C TC4429EPA Inverting 8-Pin PDIP – 40°C to +85°C TC4429IJA Inverting 8-Pin CerDIP – 25°C to +85°C TC4429MJA Inverting 8-Pin CerDIP – 55°C to +125°C
INPUT
GND
© 2001 Microchip Technology Inc. DS21419A
4.7V
EFFECTIVE
INPUT
C = 38 pF
TC4420
TC4420/9-6 10/18/96
TC4420 TC4429
6A HIGH-SPEED MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... – 5V to > V
Input Current (VIN > VDD) .........................................50mA
Power Dissipation, (TA 70°C)
PDIP ...............................................................730mW
SOIC...............................................................470mW
CerDIP............................................................800mW
5-Pin TO-220 ......................................................1.6W
Package Power Dissipation, TC 25°C
5-Pin TO-220 (With Heat Sink).........................12.5W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
SOIC............................................................. 4mW/°C
CerDIP....................................................... 6.4mW/°C
DD
Storage Temperature Range ................– 65°C to +150°C
Operating Temperature (Chip) ..............................+150°C
Operating Temperature Range (Ambient)
C Version...............................................0°C to +70°C
I Version ...........................................– 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version .......................................– 55°C to +125°C
Lead Temperature (Soldering, 10 sec) .................+300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedances (To Case)
5-Pin TO-220 R
ELECTRICAL CHARACTERISTICS: T
...................................................... 10°C/W
θJ-C
= +25°C with 4.5V ≤ V
A
18V, unless otherwise specified.
DD
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
V
IL
VIN (Max) Input Voltage Range – 5 V I
IN
Output
V
OH
V
OL
R
O
R
O
I
PK
I
REV
Switching Time (Note 1) t
R
t
F
t
D1
t
D2
Power Supply
I
S
V
DD
Logic 1 High Input Voltage 2.4 1.8 V Logic 0 Low Input Voltage 1.3 0.8 V
+0.3 V
DD
Input Current 0V ≤ VIN V
DD
High Output Voltage See Figure 1 V
10 10 µA
0.025 ——V
DD
Low Output Voltage See Figure 1 ——0.025 V Output Resistance, High I Output Resistance, Low I
= 10 mA, VDD = 18V 2.1 2.8
OUT
= 10 mA, VDD = 18V 1.5 2.5
OUT
Peak Output Current VDD = 18V (See Figure 5) 6 A Latch-Up Protection Duty Cycle 2% 1.5 ——A
Withstand Reverse Current t 300µsec
Rise Time Figure 1, CL = 2500pF 25 35 nsec Fall Time Figure 1, CL = 2500pF 25 35 nsec Delay Time Figure 1 55 75 nsec Delay Time Figure 1 55 75 nsec
Power Supply Current VIN = 3V 0.45 1.5 mA
VIN = 0V 55 150 µA
Operating Input Voltage 4.5 18 V
TC4420/9-6 10/18/96
2
© 2001 Microchip Technology Inc. DS21419A
6A HIGH-SPEED MOSFET DRIVERS
TC4420 TC4429
ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V V
DD
18V,
unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
V
IL
VIN (Max) Input Voltage Range – 5 V I
IN
Output
V
OH
V
OL
R
O
R
O
Switching Time (Note 1) t
R
t
F
t
D1
t
D2
Power Supply
I
S
V
DD
NOTE: 1. Switching times guaranteed by design.
Logic 1 High Input Voltage 2.4 ——V Logic 0 Low Input Voltage ——0.8 V
+ 0.3 V
DD
Input Current 0V ≤ VIN V
DD
High Output Voltage See Figure 1 V
10 10 µA
0.025 ——V
DD
Low Output Voltage See Figure 1 ——0.025 V Output Resistance, High I Output Resistance, Low I
= 10mA, VDD = 18V 35
OUT
= 10mA, VDD = 18V 2.3 5
OUT
Rise Time Figure 1, CL = 2500pF 32 60 nsec Fall Time Figure 1, CL = 2500pF 34 60 nsec Delay Time Figure 1 50 100 nsec Delay Time Figure 1 65 100 nsec
Power Supply Current VIN = 3V 0.45 3 mA
VIN = 0V 60 400 µA
Operating Input Voltage 4.5 18 V
VDD = 18V
18
0.1µF 0.1µF
INPUT
© 2001 Microchip Technology Inc. DS21419A
26
TC4429
1µF
+5V
INPUT
10%
0V
OUTPUT
7
CL= 2500pF
54
Figure 1. Switching Time Test Circuit
3
+18V
OUTPUT
0V
INPUT: 100 kHz, square wave,
t
RISE = tFALL
t
D1
90%
t
F
10%
10nsec.
t
90%
D2
t
R
90%
10%
TC4420/9-6 10/18/96
TC4420 TC4429
TYPICAL CHARACTERISTICS
6A HIGH-SPEED MOSFET DRIVERS
Rise Time vs. Supply Voltage
120
100
C = 10,000 pF
V (V)
DD
L
C = 4700 pF
L
C = 2200 pF
L
80
60
TIME (nsec)
40
20
0
579111315
Rise Time vs. Capacitive Load
100
80
60
V = 5V
40
TIME (nsec)
20
DD
V = 12V
DD
V = 18V
DD
Fall Time vs. Supply Voltage
100
80
C = 10,000 pF
DD
L
C = 4700 pF
L
C = 2200 pF
L
60
40
TIME (nsec)
20
0
579111315
V (V)
Fall Time vs. Capacitive Load
100
80
60
40
TIME (nsec)
20
V = 5V
DD
V = 12V
DD
V = 18V
DD
Rise and Fall Times vs. Temperature
50
C = 2200 pF
L
V = 18V
DD
40
30
20
TIME (nsec)
10
0
–60 –20 20 60 100
t
FALL
t
RISE
TA (°C)
140
Propagation Delay Time
vs. Supply Voltage
65
60
55
t
50
45
DELAY TIME (nsec)
40
D2
t
D1
10
1000
CAPACITIVE LOAD (pF)
Propagation Delay Time
vs. Temperature
50
C = 2200 pF
L
V = 18V
DD
40
t
D2
30
20
DELAY TIME (nsec)
10
0
–60 –20 20 60 100
TC4420/9-6 10/18/96
t
D1
TA (°C)
10
10,000
1000
CAPACITIVE LOAD (pF)
Supply Current vs. Capacitive Load
84
V = 15V
DD
70
56
42
28
SUPPLY CURRENT (mA)
14
0
140
0 100 1000
CAPACITIVE LOAD (pF)
500 kHz
4
200 kHz
20 kHz
10,000
10,000
35
4 6 8 1012141618
SUPPLY VOLTAGE (V)
Supply Current vs. Frequency
1000
SUPPLY CURRENT (mA)
C = 2200 pF
L
100
10
0
0 100 1000
FREQUENCY (kHz)
© 2001 Microchip Technology Inc. DS21419A
18V
10V 5V
10,000
6A HIGH-SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
TC4420 TC4429
High-State Output Resistance
5
100 mA
4
10 mA
OUT
R ( )
3
2
5913
71115
50 mA
V (V)
DD
Effect of Input Amplitude
on Propagation Delay
200
LOAD = 2200 pF
160
Low-State Output Resistance
2.5
2
OUT
R ( )
1.5
1
5913
71115
V (V)
DD
100 mA
50 mA
10 mA
Total nAS Crossover*
4
-9
3
120
INPUT 2.4V
80
DELAY TIME (nsec)
40
0
INPUT 3V
INPUT 5V
INPUT 8V AND 10V
567 11 13
8 9 10 12 14
V (V)
DD
15
2
1
Crossover Area (AS) x 10
0
567 11 13
*
8 9 10 12 14
SUPPLY VOLTAGE (V)
The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2.
15
© 2001 Microchip Technology Inc. DS21419A
5
TC4420/9-6 10/18/96
TC4420 TC4429
PACKAGE DIMENSIONS
6A HIGH-SPEED MOSFET DRIVERS
8-Pin Plastic DIP
.200 (5.08) .140 (3.56)
.150 (3.81) .115 (2.92)
.045 (1.14) .030 (0.76)
.400 (10.16)
.348 (8.84)
.110 (2.79) .090 (2.29)
.070 (1.78) .040 (1.02)
.022 (0.56) .015 (0.38)
PIN 1
.260 (6.60) .240 (6.10)
.040 (1.02) .020 (0.51)
.015 (0.38) .008 (0.20)
.310 (7.87) .290 (7.37)
3° MIN.
.400 (10.16)
.310 (7.87)
8-Pin CerDIP
.055 (1.40) MAX.
.200 (5.08) .160 (4.06)
.200 (5.08) .125 (3.18)
.110 (2.79) .090 (2.29)
.400 (10.16)
.370 (9.40)
.065 (1.65) .045 (1.14)
.300 (7.62) .230 (5.84)
.040 (1.02) .020 (0.51)
.020 (0.51) .016 (0.41)
PIN 1
.020 (0.51) MIN.
.150 (3.81)
MIN.
.015 (0.38) .008 (0.20)
.320 (8.13) .290 (7.37)
3° MIN.
.400 (10.16)
.320 (8.13)
TC4420/9-6 10/18/96
Dimensions: inches (mm)
6
© 2001 Microchip Technology Inc. DS21419A
6A HIGH-SPEED MOSFET DRIVERS
165 (4.19)
PACKAGE DIMENSIONS (Cont.)
8-Pin SOIC
TC4420 TC4429
5-Pin TO-220
.050 (1.27) TYP.
.117 (2.97) .103 (2.62)
.293 (7.44) .204 (5.18)
.197 (5.00) .189 (4.80)
.020 (0.51) .013 (0.33)
.157 (3.99) .150 (3.81)
.010 (0.25) .004 (0.10)
.415 (10.54)
.390 (9.91)
.244 (6.20) .228 (5.79)
.069 (1.75) .053 (1.35)
.156 (3.96) .140 (3.56)
DIA.
8° MAX.
.050 (1.27) .016 (0.40)
.055 (1.40) .045 (1.14)
.613 (15.57) .569 (14.45)
.010 (0.25) .007 (0.18)
.
3° - 7.5°
5 PLCS.
© 2001 Microchip Technology Inc. DS21419A
.590 (14.99) .482 (12.24)
PIN 1
.273 (6.93) .263 (6.68)
.037 (0.95) .025 (0.64)
.072 (1.83) .062 (1.57)
.025 (0.64) .012 (0.30)
.115 (2.92) .087 (2.21)
7
Dimensions: inches (mm)
TC4420/9-6 10/18/96
TC4420 TC4429
6A HIGH-SPEED MOSFET DRIVERS
W
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TC4420/9-6 10/18/96
8
© 2001 Microchip Technology Inc. DS21419A
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