MICROCHIP TC4420, TC4429 Technical data

6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

FEATURES

■ Latch-Up Protected ............ Will Withstand >1.5A

Reverse Output Current

■ Logic Input Will Withstand Negative Swing Up

to 5V

■ ESD Protected.....................................................4kV

■ Matched Rise and Fall Times ......................25nsec

■ High Peak Output Current ......................... 6A Peak

■ Wide Operating Range ..........................4.5V to 18V

■ High Capacitive Load Drive ......................10,000pF

■ Short Delay Time ................................. 55nsec Typ.

■ Logic High Input, Any Voltage .............2.4V to V

DD

■ Low Supply Current With Logic "1" Input ... 450µA

■ Low Output Impedance .................................... 2.5Ω

■ Output Voltage Swing to Within 25mV of Ground

or V

DD

APPLICATIONS

■ Switch-Mode Power Supplies

■ Motor Controls

■ Pulse Transformer Driver

■ Class D Switching Amplifiers

PIN CONFIGURATIONS

TO-220-5

Tab is
Connected
to V

DD

OUTPUT

INPUT

TC4420
TC4429

GND

INPUT

DD

V

GND

FUNCTIONAL BLOCK DIAGRAM

8-Pin DIP

V

18

DD

27

TC4420

36

NC

TC4429

45

NOTE: Duplicate pins must both be connected for proper operation.

500 µA

300 mV

V

DD

OUTPUT
OUTPUT
GNDGND

TC4429

8-Pin SOIC

V

18

DD

27

INPUT

TC4420

36

NC

TC4429

45

V

DD

OUTPUT
OUTPUT
GNDGND

V

DD

OUTPUT

GENERAL DESCRIPTION

The TC4420/4429 are 6A (peak), single output MOSFET
drivers. The TC4429 is an inverting driver (pin-compatible
with the TC429), while the TC4420 is a non-inverting driver.
These drivers are fabricated in CMOS for lower power, more
efficient operation versus bipolar drivers.

Both devices have TTL-compatible inputs, which can be
driven as high as VDD + 0.3V or as low as – 5V without upset
or damage to the device. This eliminates the need for
external level shifting circuitry and its associated cost and
size. The output swing is rail-to-rail ensuring better drive
voltage margin, especially during power up/power down
sequencing. Propagational delay time is only 55nsec (typ.)
and the output rise and fall times are only 25nsec (typ.) into
2500pF across the usable power supply range.

Unlike other drivers, the TC4420/4429 are virtually
latch-up proof. They replace three or more discrete compo­nents saving PCB area, parts and improving overall system
reliability.

ORDERING INFORMATION

Temperature

Part No. Logic Package Range

TC4420CAT Noninverting 5-Pin TO-220 0°C to +70°C
TC4420COA Noninverting 8-Pin SOIC 0°C to +70°C
TC4420CPA Noninverting 8-Pin PDIP 0°C to +70°C
TC4420EOA Noninverting 8-Pin SOIC – 40°C to +85°C
TC4420EPA Noninverting 8-Pin PDIP – 40°C to +85°C
TC4420IJA Noninverting 8-Pin CerDIP –25°C to +85°C
TC4420MJA Noninverting 8-Pin CerDIP – 55°C to +125°C

TC4429CAT Inverting 5-Pin TO-220 0°C to +70°C
TC4429COA Inverting 8-Pin SOIC 0°C to +70°C
TC4429CPA Inverting 8-Pin PDIP 0°C to +70°C
TC4429EOA Inverting 8-Pin SOIC – 40°C to +85°C
TC4429EPA Inverting 8-Pin PDIP – 40°C to +85°C
TC4429IJA Inverting 8-Pin CerDIP – 25°C to +85°C
TC4429MJA Inverting 8-Pin CerDIP – 55°C to +125°C

INPUT

GND

© 2001 Microchip Technology Inc. DS21419A

4.7V

EFFECTIVE

INPUT

C = 38 pF

TC4420

TC4420/9-6 10/18/96

TC4420
TC4429

6A HIGH-SPEED MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage ............................................... – 5V to > V

Input Current (VIN > VDD) .........................................50mA

Power Dissipation, (TA ≤ 70°C)

PDIP ...............................................................730mW

SOIC...............................................................470mW

CerDIP............................................................800mW

5-Pin TO-220 ......................................................1.6W

Package Power Dissipation, TC ≤ 25°C

5-Pin TO-220 (With Heat Sink).........................12.5W

Derating Factors (To Ambient)

PDIP ............................................................. 8mW/°C

SOIC............................................................. 4mW/°C

CerDIP....................................................... 6.4mW/°C

DD

Storage Temperature Range ................– 65°C to +150°C

Operating Temperature (Chip) ..............................+150°C

Operating Temperature Range (Ambient)

C Version...............................................0°C to +70°C

I Version ...........................................– 25°C to +85°C

E Version .......................................... – 40°C to +85°C

M Version .......................................– 55°C to +125°C

Lead Temperature (Soldering, 10 sec) .................+300°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields.
Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions
above those indicated in the operation sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.

5-Pin TO-220 .............................................. 12mW/°C

Thermal Impedances (To Case)

5-Pin TO-220 R

ELECTRICAL CHARACTERISTICS: T

...................................................... 10°C/W

θJ-C

= +25°C with 4.5V ≤ V

A

≤ 18V, unless otherwise specified.

DD

Symbol Parameter Test Conditions Min Typ Max Unit

Input

V

IH

V

IL

VIN (Max) Input Voltage Range – 5 — V
I

IN

Output

V

OH

V

OL

R

O

R

O

I

PK

I

REV

Switching Time (Note 1)
t

R

t

F

t

D1

t

D2

Power Supply

I

S

V

DD

Logic 1 High Input Voltage 2.4 1.8 — V
Logic 0 Low Input Voltage — 1.3 0.8 V

+0.3 V

DD

Input Current 0V ≤ VIN ≤ V

DD

High Output Voltage See Figure 1 V

– 10 — 10 µA

– 0.025 ——V

DD

Low Output Voltage See Figure 1 ——0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10 mA, VDD = 18V — 2.1 2.8 Ω

OUT

= 10 mA, VDD = 18V — 1.5 2.5 Ω

OUT

Peak Output Current VDD = 18V (See Figure 5) — 6 — A
Latch-Up Protection Duty Cycle ≤ 2% 1.5 ——A

Withstand Reverse Current t ≤ 300µsec

Rise Time Figure 1, CL = 2500pF — 25 35 nsec
Fall Time Figure 1, CL = 2500pF — 25 35 nsec
Delay Time Figure 1 — 55 75 nsec
Delay Time Figure 1 — 55 75 nsec

Power Supply Current VIN = 3V — 0.45 1.5 mA

VIN = 0V — 55 150 µA

Operating Input Voltage 4.5 — 18 V

TC4420/9-6 10/18/96

2

© 2001 Microchip Technology Inc. DS21419A

6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ V

DD

≤ 18V,

unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit

Input

V

IH

V

IL

VIN (Max) Input Voltage Range – 5 — V
I

IN

Output

V

OH

V

OL

R

O

R

O

Switching Time (Note 1)
t

R

t

F

t

D1

t

D2

Power Supply

I

S

V

DD

NOTE: 1. Switching times guaranteed by design.

Logic 1 High Input Voltage 2.4 ——V
Logic 0 Low Input Voltage ——0.8 V

+ 0.3 V

DD

Input Current 0V ≤ VIN ≤ V

DD

High Output Voltage See Figure 1 V

– 10 — 10 µA

– 0.025 ——V

DD

Low Output Voltage See Figure 1 ——0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10mA, VDD = 18V — 35Ω

OUT

= 10mA, VDD = 18V — 2.3 5 Ω

OUT

Rise Time Figure 1, CL = 2500pF — 32 60 nsec
Fall Time Figure 1, CL = 2500pF — 34 60 nsec
Delay Time Figure 1 — 50 100 nsec
Delay Time Figure 1 — 65 100 nsec

Power Supply Current VIN = 3V — 0.45 3 mA

VIN = 0V — 60 400 µA

Operating Input Voltage 4.5 — 18 V

VDD = 18V

18

0.1µF 0.1µF

INPUT

© 2001 Microchip Technology Inc. DS21419A

26

TC4429

1µF

+5V

INPUT

10%

0V

OUTPUT

7

CL= 2500pF

54

Figure 1. Switching Time Test Circuit

3

+18V

OUTPUT

0V

INPUT: 100 kHz, square wave,

t

RISE = tFALL

t

D1

90%

t

F

10%

≤ 10nsec.

t

90%

D2

t

R

90%

10%

TC4420/9-6 10/18/96