MICROCHIP TC1413, TC1413N Technical data

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TC1413/TC1413N

3A High-Speed MOSFET Drivers

Features

• Latch-Up Protected: Will Withstand 500mA
Reverse Current

• Input Will Withstand Negative Inputs Up to 5V

• ESD Protected: 4kV

• High Peak Output Current: 3A

• Wide Operating Range

- 4.5V to 16V

• High Capacitive Load Drive Capability: 1800pF in
20nsec

• Short Delay Time: 35nsec Typ

• Consistent Delay Times With Changes in Supply
Voltage

• Matched Delay Times

• Low Supply Current

- With Logic “1” Input: 500µA

- With Logic “0” Input: 100µA

• Low Output Impedance: 2.7Ω

• Pinout Same as TC1410/TC1411/TC1412

Applications

• Switch Mode Power Supplies

• Line Drivers

• Pulse Transformer Drive

• Relay Driver

Device Selection Table

Part Number Package Temp. Range

TC1413COA 8-Pin SOIC 0°C to +70°C

TC1413CPA 8-Pin PDIP 0°C to +70°C

TC1413EOA 8-Pin SOIC -40°C to +85°C

TC1413EPA 8-Pin PDIP -40°C to +85°C

TC1413NCOA 8-Pin SOIC 0°C to +70°C

TC1413NCPA 8-Pin PDIP 0°C to +70°C

TC1413NEOA 8-Pin SOIC -40°C to +85°C

TC1413NEPA 8-Pin PDIP -40°C to +85°C

Package Type

8-Pin PDIP/SOIC

V

1

DD

2

IN

TC1413

3

NC

4

GND

2 6, 7

Inverting

NC = No internal connection

V

DD

78OUT

6

OUT

5

GND

V

DD

NC

GND

IN

1

2

TC1413N

3

4

2 6, 7

Noninverting

V

DD

78OUT

6

OUT

5

GND

General Description

The TC1413/TC1413N are 3A CMOS buffer/drivers.
They will not latch up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of current
of either polarity being forced back into their outp ut. Al l
terminals are fully protected against up to 4kV of
electrostatic discharge.

As MOSFET drivers, the TC1413/TC1413N can easily
charge an 1800pF gate capacitance in 20nsec with
matched rise and fall times, and provide low enough
impedance in both the ON and the OFF states to
ensure the MOSFET’s intended state will not be
affected, even by lar ge transients. The rise and fall time
edges are matched to allow driving short-duration
inputs with greater accuracy.

 2002 Microchip Technology Inc. DS21392B-page 1

TC1413/TC1413N

Functional Block Diagram

Input

4.7V

GND

Effective

Input

C = 10pF

300mV

TC1413

Inverting

Outputs

Noninverting

Outputs

TC1413N

V

DD

Output

DS21392B-page 2  2002 Microchip Technology Inc.

TC1413/TC1413N

1.0 ELECTRICAL
CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage.....................................................+20V

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.

Input Voltage......................VDD + 0.3V to GND – 5.0V

Power Dissipation (T

≤ 70°C)

A

PDIP........................................................ 730mW

SOIC........................................................ 470mW

Package Thermal Resistance
PDIP R
PDIP R
SOIC R
SOIC R

..............................................125°C/W

θJ-A

............................................... 42°C/W

θJ-C

............................................ 155°C/W

θJ-A

.............................................. 45°C/W

θJ-C

Operating Temperature Range

C Version.........................................0°C to +70°C

E Version..................................... -40°C to +85°C

Storage Temperature Range ............. -65°C to +150°C

TC1413/TC1413N ELECTRICAL SPECIFICAT IONS

Electrical Characteristics: Over operating temperature range with 4.5V ≤ V

measured at T

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

I

PK

I

REV

= +25°C, V

A

Logic 1, High Input Voltage 2.0 —— V
Logic 0, Low Input Voltage ——0.8 V
Input Current -1

High Output Voltage VDD – 0.025 —— V DC Test
Low Output Voltage ——0.025 V DC Test
Output Resistance — 2.7

Peak Output Current — 2.0 — AVDD = 16V
Latch-Up Protection

Withstand Reverse Current

DD

= 16V.

—

-10

— 0.5 — A Duty cycle ≤ 2%, t ≤ 300µsec,

—

3.3

3.3

≤ 16V, unless otherwise noted. Typical values are

DD

1

10

4
5
5

µA0V ≤ VIN ≤ V

-40°C

≤ TA ≤ +85°C

Ω V

= 16V, IO = 10mA, TA = +25°C,

DD

≤ TA ≤ +70°C

0°C

-40°C

≤ TA ≤ +85°C

V

= 16V

DD

DD, TA

= +25°C

 2002 Microchip Technology Inc. DS21392B-page 3

TC1413/TC1413N

TC1413/TC1413N ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: Over operating temperature range with 4.5V ≤ V

measured at T

= +25°C, V

A

DD

= 16V.

Symbol Parameter Min Typ Max Units Test Conditions

Switching Time (Note 1)

t

R

Rise Time — 20

22
24

t

F

Fall Time — 20

22
24

t

D1

Delay Time — 35

40
40

t

D2

Delay Time — 35

40
40

Power Supply

I

S

Note 1: Switching times ensured by design.

Power Supply Current —

—

0.5

0.1

≤ 16V, unless otherwise noted. Typical values are

DD

28
33
33

28
33
33

45
50
50

45
50
50

1.0

0.15

nsec T

nsec TA = +25°C,

nsec T

nsec TA = +25°C,

mA VIN = 3V, VDD = 16V

= +25°C,

A

≤ TA ≤ +70°C

0°C

≤ TA ≤ +85°C, Figure 3-2

-40°C

≤ TA ≤ +70°C

0°C

≤ TA ≤ +85°C, Figure 3-2

-40°C
= +25°C,

A

≤ TA ≤ +70°C

0°C

≤ TA ≤ +85°C, Figure 3-2

-40°C

≤ TA ≤ +70°C

0°C

≤ TA ≤ +85°C, Figure 3-2

-40°C

= 0V

V

IN

DS21392B-page 4  2002 Microchip Technology Inc.

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(8-Pin PDIP,

SOIC)

1V
2 INPUT Control input.
3 NC No connection.
4 GND Ground.
5 GND Ground.
6 OUTPUT CMOS totem-pole output, common to pin 7.
7 OUTPUT CMOS totem-pole output, common to pin 6.
8V

Symbol Description

DD

DD

Supply input, 4.5V to 16V.

Supply Input, 4.5V to 16V.

TC1413/TC1413N

 2002 Microchip Technology Inc. DS21392B-page 5