MICROCHIP TC1412, TC1412N Technical data

M

2A High-Speed MOSFET Drivers

TC1412/TC1412N

Features

• Latch-Up Protected: Will Withstand 500 mA Reverse Current

• Input Will Withstand Negative Inputs Up to 5V

• ESD Protected: 4 kV

• High Peak Output Current: 2A

• Wide Input Supply Voltage Operating Range:

- 4.5V to 16V

• High Capacitive Load Drive Capability:

- 1000 pF in 18 nsec

• Short Delay Time: 35 nsec Typ.

• Matched Delay Times

• Low Supply Current:

- With Logic ‘1’ Input: 500 µA

- With Logic ‘0’ Input: 100 µA

• Low Output Impedance: 4Ω

• Available in Space-Saving 8-pin MSOP Package

• Pinout Same as TC1410/TC1411/TC1413

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Line Drivers

• Relay Driver

General Description

The TC1412/TC1412N are 2A CMOS buffers/drivers. They will not latch-up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge.

As MOSFET drivers, the TC1412/TC1412N can easily charge a 1000 pF gate capacitance in 18 nsec with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The leading and trailing edge propagation delay times are also matched to allow driving short-duration inputs with greater accuracy.

Package Type

8-Pin MSOP/PDIP/SOIC

6,7

8

7

6

5

V

DD

OUT

GND

1

V

DD

IN

2

TC1412N

NC

3

GND

45

2

Non-Inverting

6,7

8

7

6

V

DD

OUT

GND

V

1

DD

IN

2

TC1412

NC

3

4

GND

2

Inverting

NC = No Internal Connection

NOTE: Duplicate pins must be connected together

for proper operation.

 2003 Microchip Technology Inc. DS21391C-page 1

TC1412/TC1412N

Functional Block Diagram

300 mV

TC1412

Inverting Outputs

V

DD

Output

Input

Effective

Input C = 10 pF

GND

4.7V

Non-Inverting

Outputs

TC1412N

DS21391C-page 2  2003 Microchip Technology Inc.

TC1412/TC1412N

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage .....................................................+20V

Input Voltage ...................... V

Power Dissipation (T

≤ 70°C)

A

MSOP .......................................................... 340 mW

PDIP ............................................................ 730 mW

SOIC............................................................ 470 mW

Storage Temperature Range..............-65°C to +150°C

Maximum Junction Temperature...................... +150ºC

† Stresses above those listed under "Absolut e Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

+ 0.3V to GND – 5.0V

DD

PIN FUNCTION TABLE

Symbol Description

V

DD

INPUT

NC No connection

GND Ground

OUTPUT CMOS push-pull output,

V

DD

Supply input, 4.5V to 16V

Control input

common to pin 7

common to pin 6

Supply input, 4.5V to 16V

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ V

Typical values are measured at T

Parameters Sym Min Typ Max Units Conditions

Input

Logic ‘1’, High Input Voltage V

Logic ‘0’, Low Input Voltage V

Input Current I

Output

High Output Voltage V

Low Output Voltage V

Output Resistance R

Peak Output Current I

Latch-Up Protection Withstand Reverse Current

Switching Time (Note 1)

Rise Time t

Fall Time t

Note 1: Switching times ensured by design.

= +25°C, VDD = 16V.

A

IH

IL

IN

2.0 — — V

——0.8V

-1.0 — 1.0 µA 0V ≤ VIN ≤ V

-10 — 10 -40°C ≤ T

VDD – 0.025 — — V DC Test

OH

OL

O

— — 0.025 V DC Test

—46Ω VDD = 16V, IO = 10 mA, TA = +25°C

—57 0°C ≤ T

— 5 7 -40°C ≤ T

—2.0—AV

— 0.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec,

—1826nsecT

I

REV

PK

R

—2031 0°C ≤ T

— 22 31 -40°C ≤ T

F

—1826nsecT

—2031 0°C ≤ T

— 22 31 -40°C ≤ T

= 16V

DD

V

= 16V

DD

= +25°C

A

= +25°C

A

DD, TA

≤ +85°C

A

≤ +70°C

A

≤ +85°C

A

≤ +70°C

A

≤ +85°C, Figure 4-1

A

≤ +70°C

A

≤ +85°C, Figure 4-1

A

≤ 16V.

DD

= +25°C

 2003 Microchip Technology Inc. DS21391C-page 3

TC1412/TC1412N

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ V

Typical values are measured at T

= +25°C, VDD = 16V.

A

Parameters Sym Min Typ Max Units Conditions

Delay Time t

D1

D2

—3545nsecT

—4050 0°C ≤ T

= +25°C,

A

— 40 50 -40°C ≤ T

—3545nsecT

—4050 0°C ≤ T

= +25°C

A

— 40 50 -40°C ≤ T

≤ +70°C

≤ +85°C, Figure 4-1

A

≤ +70°C

≤ +85°C, Figure 4-1

A

Power Supply

Power Supply Current I

S

—0.51.0mAV

— 0.1 0.15 V

= 3V, VDD = 16V

IN

= 0V

IN

Note 1: Switching times ensured by design.

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range (C) T

Specified Temperature Range (E) T

Maximum Junction Temperature T

Storage Temperature Range T

A

J

A

0—+70ºC

-40 — +85 ºC

——+150ºC

-65 — +150 ºC

Package Thermal Resistances

Thermal Resistance, 8L-MSOP θ

Thermal Resistance, 8L-PDIP θ

Thermal Resistance, 8L-SOIC θ

JA

— 206 — ºC/W

— 125 — ºC/W

— 155 — ºC/W

DD

≤ 18V.

DD

≤ 16V.

DS21391C-page 4  2003 Microchip Technology Inc.

TC1412/TC1412N

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, over operating temperature range with 4.5V ≤ V

500

TA = +25°C

400

VIN = 3V

300

(µA)

200

SUPPLY

I

100

0

VDD (V)

VIN = 0V

FIGURE 2-1: Quiescent Supply Current vs. Supply Voltage.

1.6

TA = +25°C

1.5

(V)

1.4

1.3

THRESHOLD

V

1.2

1.1

V

IH

V

IL

VDD (V)

16141210864

500

400

300

(µA)

200

SUPPLY

I

100

VIN = 3V

V

= 0V

IN

0

-40-200 20406080

FIGURE 2-4: Quiescent Supply Current vs. Temperature.

1.6

V

= 16V

SUPPLY

1.5

(V)

1.4

1.3

THRESHOLD

V

1.2

1.1

-40

V

-20 0 20 40 60 80

≤ 16V.

DD

TEMPERATURE (°C)

IL

TEMPERATURE (°C)

V

= 16V

SUPPLY

V

IH

FIGURE 2-2: Input Threshold vs. Supply Voltage.

13

11

°C

5

8

+

=

9

(Ohms)

7

DS-ON

R

5

3

1

T

A

°C

5

2

+

=

T

A

°C

0

4

-

=

T

A

VDD (V)

16141210864

FIGURE 2-3: High-State Output Resistance vs. Supply Voltage.

FIGURE 2-5: Input Threshold vs. Temperature.

13

11

°C

5

8

+

=

T

A

9

(Ohms)

DS-ON

R

7

5

3

1

°C

5

2

+

=

T

A

°C

0

4

-

=

T

A

V

(V)

DD

FIGURE 2-6: Low-State Output Resistance vs. Supply Voltage.

16141210864

 2003 Microchip Technology Inc. DS21391C-page 5