MICROCHIP TC1303A, TC1303B, TC1303C, TC1304 Technical data
TC1303A/TC1303B/
TC1303C/TC1304
500 mA Synchronous Buck Regulator,
+ 300 mA LDO with Power-Good Output
Features
• Dual-Output Regulator (500 mA Buck Regulator
and 300 mA Low-Dropout Regulator)
• Power-Good Output with 300ms Delay
• Total Device Quiescent Curre nt = 65 µA, Typ.
• Independent Shutdown for Buck and LDO
Outputs (TC1303)
• Both Outputs Internally Compensated
• Synchronous Buck Regulator:
- Over 90% Typical Efficiency
- 2.0 MHz Fixed-Frequency PWM
(Heavy Loa d)
- Low Output Noise
- Automatic PWM to PFM mode transition
- Adjustable (0.8V to 4.5V) and Standard
Fixed-Output Voltages (0.8V, 1.2V, 1.5V,
1.8V, 2.5V, 3.3V)
• Low-Dropout Regulator:
- Low-Dropout Vol t ag e= 137mV Typ. @
200 mA
- Standard Fixed-Output Voltages
(1.5V, 1.8V, 2.5V, 3.3V)
• Power-Good Function:
- Monitors Buck Output Function (TC1303A)
- Monitors LDO Output Function (TC1303B)
- Monitors Both Buck and LDO Output Func-
tions (TC1303C and TC1304)
- 300 ms Delay Used for Processor Reset
• Sequenced Startup and Shutdown (TC1304)
• Small 10-pin 3X3 DFN or MSOP Package
Options
• Operating Junction Temperature Range:
- -40°C to +125°C
• Undervoltage Lockout (UVLO)
• Output Short Circuit Protection
• Overtemperature Protection
Description
The TC1303/TC1304 combines a 500 mA synchronous buck regulator and 300m A Low-Drop out Regulator (LDO) with a power-good monitor to provide a highly
integrated solution for devices that require multiple
supply voltages. The unique combination of an
integrated buck switching regulator and low-dropout
linear regulator provides the lowest system cost for
dual-output voltage applications that require one lower
processor core voltage and one higher bias voltage.
The 500 mA synchronous buck regul ator swit ches at a
fixed frequency of 2.0 MHz when the load is heavy,
providing a low noise, small-size solution. When the
load on the buck output is reduced to light levels, it
changes operation to a Pulse Frequency Modulation
(PFM) mode to minimize quie scent current draw from
the battery. No intervention is necessary for smooth
transition from one mode to another.
The LDO provides a 300 mA auxiliary output that
requires a single 1 µF ceramic output capacitor,
minimizing board area and cost. The typical dropout
voltage for the LDO output is 137 mV for a 200 mA
load.
For the TC1303/TC1304, the power-good output is
based on the regulation of the buck regulator output, the
LDO output or the combination of both. The TC1304
features start-up and shutdown output sequencing.
The TC1303/TC1304 i s available in either the 10-pin
DFN or MSOP package.
Additional protection features include: UVLO,
overtemperature and overcurrent protection on both
outputs.
For a complete listing of TC1303/TC1304 standard
parts, consult your Microchip representative.
Applications
• Cellular Phones
• Portable Computers
• USB-Powered Devices
• Handheld Medical Instruments
• Organizers and PDAs
© 2005 Microchip Technology Inc. DS21949B-page 1
TC1303A/TC1303B/TC1303C/TC1304
Package Types
TC1303A,B,C
SHDN2
V
IN2
V
OUT2
PG
A
GND
SHDN
V
IN2
V
OUT2
PG
A
GND
10-Lead DFN
1
2
3
4
5
10
9
8
7
6
10-Lead DFN
1
2
3
4
5
10
9
8
7
6
P
GND
L
X
V
IN1
SHDN1
V
FB1/VOUT1
P
GND
L
X
V
IN1
A
GND
V
FB1/VOUT1
TC1304
SHDN2
V
IN2
V
OUT2
PG
A
GND
SHDN
V
IN2
V
OUT2
PG
A
GND
10-Lead MSOP
1
2
3
4
5
10-Lead MSOP
1
2
3
4
5
10
9
8
7
6
10
9
8
7
6
P
GND
L
X
V
IN1
SHDN1
V
FB1/VOUT1
P
GND
L
X
V
IN1
A
GND
V
FB1/VOUT1
DS21949B-page 2 © 2005 Microchip Technology Inc.
TC1303A/TC1303B/TC1303C/TC1304
Functional Block Diagram – TC1303
V
IN1
V
IN2
SHDN1
V
REF
Undervoltage Lockout
(UVLO)
UVLO
Synchronous Buck Regulator
PDRV
L
X
Control
A
GND
Driver
NDRV
P
GND
Sense Switcher for A,C
TC1303A
(1),B(2),C(1)
P
GND
options
P
GND
V
OUT1/VFB1
PG
PG Generator with Delay
V
REF
SHDN2
Note 1: PG open-drain for A,C options
2: PG push-pull output for B option
Sense LDO for B,C
LDO
UVLO
V
A
OUT2
GND
© 2005 Microchip Technology Inc. DS21949B-page 3
TC1303A/TC1303B/TC1303C/TC1304
Functional Block Diagram – TC1304
V
IN1
V
IN2
SHDN
V
REF
Control
Output Voltage
Sequencer ckt.
Undervoltage Lockout
(UVLO)
Synchronous Buck Regulator
Driver
P
GND
A
GND
TC1304
PG Generator with Delay
PDRV
NDRV
(Note)
UVLO
P
GND
A
GND
L
X
P
GND
V
OUT1/VFB1
PG
V
REF
Note: PG open-drain for TC1304
LDO
UVLO
V
A
OUT2
GND
DS21949B-page 4 © 2005 Microchip Technology Inc.
TC1303A/TC1303B/TC1303C/TC1304
Typical Application Circuits
V
IN
2.7V to 4.2V
4.7 µF
R
PULLUP
Processor
RESET
TC1303A
Fixed-Output Application
10-Lead MS OP
8
2
7
1
V
IN1
V
IN2
SHDN1
PG
P
V
V
A
L
GND
OUT1
OUT2
GND
9
X
10
6
3SHDN2
54
TC1303B
Adjustable-Output Application
10-Lead DFN
4.7 µH
4.7 µF
1µF
V
OUT2
2.5V @ 300 mA
V
OUT1
1.5V @ 500 mA
4.5V to 5.5V
*Optional
Capacitor
V
IN2
2.7V to 4.2V
Input
Voltage
V
IN
1.0 µF
Processor
RESET
4.7 µF
R
PULLUP
Processor
RESET
4.7 µF
8
2
7
1
V
IN1
V
IN2
SHDN1
SHDN2
PG
V
V
P
GND
OUT1
OUT2
A
GND
9
L
X
10
6
3
54
(Note)
Note: Connect DFN package exposed pad to A
TC1304
Fixed-Output Application
10-Lead MSOP
V
8
IN1
V
2
IN2
A
7
GND
1
PG
P
V
V
A
GND
OUT1
OUT2
GND
L
9
X
10
6
3SHDN
54
4.7 µH
4.7 µF
1µF
4.7 µH
1µF
V
OUT2
3.3V @
300 mA
GND
4.7 µF
V
OUT2
2.5V @ 300 mA
200 kΩ 4.99 kΩ
33 pF
121 kΩ
.
V
OUT1
1.2V @ 500 mA
V
OUT1
2.1V @
500 mA
© 2005 Microchip Technology Inc. DS21949B-page 5
TC1303A/TC1303B/TC1303C/TC1304
1.0 ELECTRICAL CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings †
operational listings of this specification is not implied.
Exposure to maximum rating conditions fo r ext ended pe riods
V
- A
IN
All Other I/O .......................... .... (A
L
to P
X
P
GND
Output Short Circuit Current .................................Continuous
......................................................................6.0V
GND
........................ ...................... -0.3V to (V
GND
to A
...................................................-0.3V to +0.3V
GND
- 0.3V) to (V
GND
+ 0.3V)
IN
+ 0.3V)
IN
may affect device reliability.
Power Dissipation (Note 7) ..........................Internally Limited
Storage temperature.................................... .-65°C to +150°C
Ambient Temp. with Power Applied.................-40°C to +85°C
Operating Junction Tempe rature...................- 40°C to +125°C
ESD protection on all pins (HBM) ....................................... 3kV
DC CHARACTERISTICS
Electrical Characteristics: V
= 100 ma, I
I
OUT1
OUT2
IN1=VIN2
= 0.1 mA TA= +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters Sym Min Typ Max Units Conditions
Input/Output Characteristics
Input Voltage V
Maximum Output Current I
Maximum Output Current I
Shutdown Current
Combined V
IN1
and V
TC1303A,B Operating I
TC1303C, TC1304 Operating I
Synchronous Buck I
LDO I
Q
Current
IN2
Q
Q
Shutdown/UVLO/Thermal Shutdown Characteristics
SHDN
1,SHDN2, SHDN (TC1304)
Logic Input Voltage Low
SHDN
1,SHDN2, SHDN (TC1304)
Logic Input Voltage High
1,SHDN2, SHDN (TC1304)
SHDN
Input Leakage Current
Thermal Shutdown T
Thermal Shutdown Hysteresis T
Undervoltage Lockout
(V
OUT1
and V
OUT2
)
Undervoltage Lockout Hysteresis UVLO
Note 1: The Minimum V
2: V
3: TCV
is the regulator output voltage setting.
RX
OUT2
has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VRX + V
IN
= ((V
OUT2max
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the L
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: V
IN1
and V
are supplied by the same input source.
IN2
= SHDN1,2 =3.6V, C
IN
OUT1_MAX
OUT2_MAX
I
IN_SHDN
I
Q
Q
I
Q
OUT1=CIN
2.7 — 5.5 V Note 1, Note 2, Note 8
500 —— mANote 1
300 —— mANote 1
— 0.05 1 µA SHDN1 = SHDN2=GND
— 65.0
70.1
= 4 .7 µF, C
110
110
OUT2
— 38 — µA SHDN1 = VIN, SHDN2 = GND
— 46 — µA SHDN1 = GND, SHDN2 = V
V
IL
V
IH
I
IN
SHD
SHD-HYS
——15 %V
45 ——%VINV
-1.0 ±0.01 1.0 µA V
— 165 — °C Note 6, Note 7
—10— °C
UVLO 2.4 2.55 2.7 VV
– V
-
HYS
OUT2min
— 200 — mV
) * 106)/(V
OUT2
* DT).
, TJ, θJA). Exceeding the maximum allowable power
A
pin to VIN, and from LX to P
X
=1µF, L =4.7µH, V
OUT1
µA SHDN1 = SHDN2=V
I
=0mA, I
OUT1
V
IN
IN1=VIN2
IN1=VIN2
IN1=VIN2
SHDNX
SHDN
IN1
DROPOUT, VRX
Y =V
Falling
= VR1 or VR2.
OUT2
= 2.7V to 5.5V
= 2.7V to 5.5V
= 2.7V to 5.5V
=GND
IN
. In cases where
GND
(ADJ) = 1.8V,
IN2
=0mA
IN2
DS21949B-page 6 © 2005 Microchip Technology Inc.
TC1303A/TC1303B/TC1303C/TC1304
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: V
= 100 ma, I
I
OUT1
OUT2
IN1=VIN2
= 0.1 mA TA= +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters Sym Min Typ Max Units Conditions
Synchronous Buck Regulator (V
Adjustable Output Voltage Range V
Adjustable Reference Feedback
Voltage (V
FB1
)
Feedback Input Bias Current
)
(I
FB1
Output Voltage Tolerance Fixed
(V
)
OUT1
Line Regulation (V
Load Regulation (V
Dropout Voltage V
)V
OUT1
)V
OUT1
OUT1
Internal Oscillator Frequency F
Sta rt Up T ime T
R
P-Channel R
DSon
N-Channel R
R
DSon
Pin Leakage Current I
L
X
Positive Current Limit Threshold +I
LDO Output (V
Output Voltage Tolerance (V
OUT2
)
OUT2
Temperature Coefficient TCV
Line Regulation ΔV
Load Regulation, V
Load Regulation, V
Dropout Voltage V
≥ 2.5V ΔV
OUT2
< 2.5V ΔV
OUT2
> 2.5V VIN – V
OUT2
Power Supply Rejection Ratio PSRR — 62 — dB f ≤ 100 Hz, I
Output Noise eN — 1.8 — µV/(Hz)
Output Short Circuit Current
(Average)
Note 1: The Minimum V
2: V
3: TCV
is the regulator output voltage setting.
RX
OUT2
has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VRX + V
IN
= ((V
OUT2max
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the L
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: V
IN1
and V
are supplied by the same input source.
IN2
= SHDN1,2 =3.6V, C
)
OUT1
OUT1
V
FB1
I
VFB1
V
OUT1
LINE-REG
LOAD-REG
VIN – V
OUT1
OSC
SS
DSon-P
DSon-N
LX
LX(MAX)
)V
OUT2
OUT
/
OUT2
ΔV
IN
/
OUT2
I
OUT2
/
OUT2
I
OUT2
OUT2
I
OUTsc2
– V
OUT2min
OUT1=CIN
= 4 .7 µF, C
=1µF, L =4.7µH, V
OUT2
OUT1
0.8 — 4.5 V
0.78 0.8 0.82 V
— -1.5 — nA
-2.5 ±0.3 +2.5 % Note 2
—0.2— %/VV
—0.2— %V
=VR+1V to 5.5V,
IN
= 100 mA
I
LOAD
+1.5V, I
IN=VR
500 mA (Note 1)
— 280 — mV I
= 500 mA, V
OUT1
(Note 5)
1.6 2.0 2.4 MHz
—0.5— msT
= 10% to 90%
R
— 450 650 mΩ IP=100 mA
— 450 650 mΩ IN=100 mA
-1.0 ±0.01 1.0 μA SHDN = 0V, VIN = 5.5V, LX = 0V,
L
= 5.5V
X
— 700 — mA
-2.5 ±0.3 +2.5 % Note 2
— 25 — ppm/°C Note 3
-0.2 ±0.02 +0.2 %/V (VR+1V) ≤ VIN ≤ 5.5V
-0.75 -0.08 +0.75 %I
-0.9 -0.18 +0.9 %I
— 137
205
300
500
mV I
— 240 — mA R
DROPOUT, VRX
) * 106)/(V
OUT2
* DT).
, TJ, θJA). Exceeding the maximum allowable power
A
pin to VIN, and from LX to P
X
½
= 0.1 mA to 300 mA (Note 4)
OUT2
= 0.1 mA to 300 mA (Note 4)
OUT2
= 200 mA (Note 5)
OUT2
I
= 300 mA
OUT2
= I
OUT2
=GND
≤ 1Ω
OUT1
=50mA,
= 0 µF
C
IN
f ≤ 1 kHz, I
SHDN1
LOAD2
= VR1 or VR2.
. In cases where
GND
(ADJ) = 1.8V,
= 100 mA to
LOAD
=3.3V
OUT1
= 50 mA,
OUT2
© 2005 Microchip Technology Inc. DS21949B-page 7
TC1303A/TC1303B/TC1303C/TC1304
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: V
= 100 ma, I
I
OUT1
OUT2
IN1=VIN2
= 0.1 mA TA= +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters Sym Min Typ Max Units Conditions
Wake-Up Time (From SHDN2
mode), (V
Settling Time (From SHDN2
mode), (V
OUT2
OUT2
)
)
Power-Good (PG)
Voltage Range PG V
PG Threshold High
(V
OUT1
or V
OUT2
)
PG Threshold Low
(V
OUT1
or V
OUT2
)
PG Threshold Hysteresis
(V
OUT1
and V
OUT2
)
PG Threshold Tempco ΔVTH/ΔT — 30 — ppm/° C
PG Delay t
PG Active Time-out Period t
PG Output Voltage Low PG_V
PG Output Voltage High
(TC1303B only)
Note 1: The Minimum V
2: V
3: TCV
is the regulator output voltage setting.
RX
OUT2
has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VRX + V
IN
= ((V
OUT2max
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the L
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: V
IN1
and V
are supplied by the same input source.
IN2
= SHDN1,2 =3.6V, C
t
WK
t
S
PG
V
TH_H
V
TH_L
V
TH_HYS
RPD
RPU
OL
OH
) * 106)/(V
0.9* V
– V
PG_V
OUT2min
OUT1=CIN
= 4 .7 µF, C
— 31 100 µs I
— 100 — µs I
1.0
1.2
—5.5
5.5
—9496 % of
89 92 — % of
—2—% of
— 165 — µs V
=1µF, L =4.7µH, V
OUT2
OUT1
OUT1
VTA = 0°C to +70°C
= -40°C to +85°C
T
A
V
≤ 2.7 I
IN
On Rising V
V
OUTX
V
OUTX=VOUT1
On Falling V
V
V
OUTX
OUTX
V
OUTX=VOUT1
V
OUTX=VOUT1
OUT1
to (V
140 262 560 ms V
——0.2 VV
OUT2
—— VV
DROPOUT, VRX
* DT).
OUT2
, TJ, θJA). Exceeding the maximum allowable power
A
pin to VIN, and from LX to P
X
OUT1
to V
I
SINK
OUT1
IPG= 1.2 mA V
I
= 100 µA, 1.0V < V
PG
OUT1
V
OUT2
V
OUT2
OUT1
= I
= 50 mA
OUT2
= I
= 50 mA
OUT2
= 100 µA
SINK
OUT1
or V
OUT1
or V
or V
or V
- 100 mV)
TH
or V
TH +
OUT2
OUT2=VTH
100 mV,
=(V
= 1.2 mA
or V
OUT2=VTH
IN2
or V
OUT2=VTH
≥ 1.8V, IPG= - 500 µA
< 1.8V,IPG= - 300 µA
= VR1 or VR2.
. In cases where
GND
(ADJ) = 1.8V,
or V
OUT2
OUT2
or V
OUT2
OUT2
OUT2
+ 100 mV)
TH
- 100 mV
-100mV
>2.7V
< 2.7V
IN2
+ 100 mV
,
DS21949B-page 8 © 2005 Microchip Technology Inc.
TC1303A/TC1303B/TC1303C/TC1304
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN = +2.7V to +5.5V
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature
Range
Storage Temperature Range T
Maximum Junction Temperature T
Thermal Package Resistances
Thermal Resistance, 10L-DFN θ
Thermal Resistance, 10L-MSOP θ
T
J
A
J
JA
JA
-40 — +125 °C Steady state
-65 — +150 °C
— — +150 °C Transient
— 41 — °C/W Typical 4-layer Board with
Internal Ground Plane and 2 Vias
in Thermal Pad
— 113 — °C/W Typical 4-layer Board with
Internal Ground Plane
© 2005 Microchip Technology Inc. DS21949B-page 9
TC1303A/TC1303B/TC1303C/TC1304
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and t ables provided fol lowi ng this note are a st a t istic al summary based on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, V
(ADJ) = 1.8V, TA= +25°C. Boldface specifications apply over the TA range of -40°C to +85°C. TA= +25°C. Adjustable- or fixed-
V
OUT1
output voltage options can be used to generate the Typical Performance Characteristics.
80
I
= I
= 0 mA SHDN1 = V
OUT1
OUT2
76
72
VIN = 5.5V
68
64
Switcher and LDO (µA)
Q
I
VIN = 3.6V
60
-40 -25 -10 5 20 35 50 65 80 95 110 125
Ambient Temperature (°C)
FIGURE 2-1: IQ Switcher and LDO Current vs. Ambient Temperature (TC1303A,B).
78
SHDN1 = V
IN2
SHDN2 = V
76
74
72
70
68
Switcher and LDO (µA)
Q
I
66
-40 -25 -10 5 20 35 50 65 80 95 110 125
IN2
Ambient Temperature (°C)
IN1
VIN = 5.5V
VIN = 4.2V
VIN = 3.6V
= V
= SHDN1,2 = 3.6V, C
IN2
SHDN2 = V
VIN = 4.2V
OUT1=CIN
IN2
IN2
= 4.7 µF , C
55
I
= 0 mA
OUT2
50
45
40
LDO (µA)
Q
I
35
=1µF, L =4.7µH,
OUT2
VIN = 3.6V
VIN = 5.5V
VIN = 4.2V
SHDN1 = A
SHDN2 = V
30
-40 -25 -10 5 20 35 50 65 80 95 110 125
Ambient Temperature (°C)
FIGURE 2-4: I
LDO Current vs. Ambient
Q
Temperature.
100
95
90
I
= 100 mA
85
80
75
70
Efficiency (%)
65
OUT1
60
V
55
OUT1
I
I
OUT1
OUT1
= 250 mA
= 500 mA
50
2.7 3.05 3.4 3.75 4.1 4.45 4.8 5.15 5.5
Input Voltage (V)
SHDN1 = V
SHDN2 = A
IN2
GND
GND
IN2
FIGURE 2-2: I
Switcher and LDO
Q
Current vs. Ambient Temperature
FIGURE 2-5: V
Input Voltage (V
OUT1
Output Efficiency vs.
OUT1
= 1.2V).
(TC1303C, TC1304).
SHDN1 = V
55
I
= 0 mA
OUT1
VIN = 5.5V
SHDN2 = A
IN2
GND
50
45
40
VIN = 4.2V
Switcher (µA)
Q
I
35
VIN = 3.6V
30
-40 -25 -10 5 20 35 50 65 80 95 110 125
Ambient Temperature (°C)
FIGURE 2-3: I
Switcher Current vs.
Q
Ambient Temperature.
DS21949B-page 10 © 2005 Microchip Technology Inc.
100
95
90
85
Efficiency(%)
80
OUT1
V
75
V
IN1
= 4.2V
70
0.005 0.104 0.203 0.302 0.401 0.5
FIGURE 2-6: V
I
OUT1
(V
OUT1
= 1.2V).
SHDN1 = V
SHDN2 = A
V
IN1
V
= 3.0V
IN1
(A)
I
OUT1
Output Efficiency vs.
OUT1
= 3.6V
IN2
GND
TC1303A/TC1303B/TC1303C/TC1304
Note: Unless otherwise indicated, V
V
(ADJ) = 1.8V, TA= +25°C. Boldface specifications apply over the TA range of -40°C to +85°C. TA= +25°C. Adjustable- or fixed-
OUT1
IN1
= V
= SHDN1,2 = 3.6V, C
IN2
OUT1=CIN
= 4.7 µF , C
=1µF, L =4.7µH,
OUT2
output voltage options can be used to generate the Typical Performance Characteristics.
V
100
95
I
= 100 mA
OUT1
90
I
OUT1
= 250 mA
85
80
75
Efficiency(%)
70
OUT1
V
65
60
2.7 3.05 3.4 3.75 4.1 4.45 4.8 5.15 5.5
FIGURE 2-7: V
Input Voltage (V
100
95
90
85
Efficiency(%)
OUT1
80
V
75
0.005 0.104 0.203 0.302 0.401 0.5
OUT1
VIN = 3.0V
SHDN1 = V
SHDN2 = A
I
= 500 mA
OUT1
Input Voltage (V)
Output Efficiency vs.
OUT1
= 1.8V).
SHDN1 = V
SHDN2 = A
VIN = 3.6V
I
(A)
OUT1
IN2
GND
VIN = 4.2V
IN2
GND
100
Efficiency (%)
OUT1
V
FIGURE 2-10: V
I
(V
OUT1
1.206
1.202
(V)
OUT1
1.198
V
1.194
= 3.6V
IN1
95
90
85
80
75
V
= 4.2V
IN1
V
= 5.5V
IN1
SHDN1 = V
SHDN2 = A
70
65
60
0.005 0.104 0.203 0.302 0.401 0.5
I
(A)
OUT1
Output Efficiency vs.
OUT1
V
IN1
= 3.6V
SHDN1 = V
SHDN2 = A
OUT1
1.21
= 3.3V).
1.19
0.005 0.104 0.203 0.302 0.401 0.5
I
(A)
OUT1
IN2
GND
IN2
GND
FIGURE 2-8: V
I
OUT1
(V
OUT1
= 1.8V).
100
I
= 100 mA
96
92
88
Efficiency (%)
OUT1
84
V
OUT1
I
OUT1
= 250 mA
80
3.60 3.92 4.23 4.55 4.87 5.18 5.50
FIGURE 2-9: V
Input Voltage (V
OUT1
Output Efficiency vs.
OUT1
SHDN1 = V
SHDN2 = A
I
= 500 mA
OUT1
Input Voltage (V)
Output Efficiency vs.
OUT1
= 3.3V).
IN2
GND
FIGURE 2-11: V
(V
OUT1
(V)
OUT1
V
= 1.2V).
1.82
1.815
1.81
1.805
1.8
1.795
1.79
0.005 0.104 0.203 0.302 0.401 0.5
FIGURE 2-12: V
(V
OUT1
= 1.8V).
OUT1
V
= 3.6V
IN1
OUT1
I
OUT1
vs. I
(A)
vs. I
OUT1
SHDN1 = V
SHDN2 = A
OUT1
IN2
GND
© 2005 Microchip Technology Inc. DS21949B-page 11
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