Microchip TC1188-QECT, TC1188-RECT, TC1188-SECT, TC1188-TECT, TC1189-QECT Schematic [ru]
...
TC1188/TC1189
GND
SHDN GND
5
1
4
2
3
TC1188
TC1189
5-Pin SOT-23A
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
V
IN
V
OUT
V
OUT
V
IN
Output
GND
SHDN
TC1188
TC1189
+
1µF
–
C
OUT
GND
Voltage
1µF
C
IN
Battery
MAX8863/64 Pin Compatible, Low Dropout,
120 mA Linear Regulators
Features
• Input Voltage Range: 2.7 V to 6.0 V
• 120 mA Output Current
• Low Supply Current: 50 µA, (typical)
• Low Dropout Voltage: 110 mV, (typical at 100 mA)
• Fast Turn-On from Shutdown: 140 µsec (typical)
• Low Output Noise
• Over-Current and Over-Temperature Protection
• Low Power Shutdown Mode
• Auto Discharge of Output Capacitor (TC1189)
Applications
• Battery Powered Systems
• Portable Computers
• Medical Instruments
• Cellular, Cordless Phones
•PDAs
• Pagers
Package Type
General Description
The TC1188 and TC1189 are fixed output, low dropout
linear regulators that operate from a 2.7V to 6.0V input
voltage source. The output is capable of delivering up
to 120 mA while consuming only 50 µA of quiescent
current. The low dropout voltage, 120 mV, make the
TC1188 and TC1189 good choices for battery powered
applications. Integrated over-current and over-temperature protection features provide for a fault tolerant
solution.
The TC1189 includes an output voltage auto discharge
feature. When shutdown, the TC1189 will automatically
discharge the output voltage using an internal N-Channel MOSFET switch.
Fixed output voltage options for the TC1188/TC1189
are: 1.80V, 2.80V, 2.84V and 3.15V. Both the TC1188
and TC1189 are available in SOT23-5 packages.
Typical Application Circuit
2002-2012 Microchip Technology Inc. DS21364C-page 1
TC1188/TC1189
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Short-Circuit Duration.............................Infinite
Output Voltage........................... (-0.3V) to (V
Maximum Voltage On Any Pin.... (-0.3V) to (V
Continuous Power Dissipation (T
= +70°C)
A
+ 0.3V)
IN
+0.3V)
IN
*Notice: *Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
SOT-23-5 (derate 7.1 mW/°C above +70°C)
..................................................................571 mW
Operating Temperature Range............... -40°C to 85°C
Storage Temperature..........................-65°C to +160°C
Lead Temperature (Soldering, 10 Sec.) ........... +300°C
DC SPECIFICATIONS
Electrical Characteristics: V
(Note 1)
Parameters Symbol Min Typ Max Units Conditions
Input Voltage V
Output Voltage V
Maximum Output Current I
Current Limit I
Input Current I
Dropout Voltage — 1.1 — mV I
Line Regulation V
Load Regulation V
Output Voltage Noise — 350 — µV
Wake Up Time
(from Shutdown Mode)
Setting Time
(from Shutdown Mode)
Note 1: Limits are 100% production tested at T
relation using Statistical Quality Control (SQC) methods.
2: Validated by line regulation test.
3: Not tested. For design purposes, the current limit should be considered 150 mA minimum to 410 mA maximum.
4: The dropout voltage is defined as (V
V
= V
+2V.
IN
OUT
= +3.6V, GND = 0V, TA = T
IN
V
IN
OUT
OUT
3.05 3.15 3.25 V 0 mA I
2.75 2.84 2.93 V 0 mA I
2.70 2.80 2.88 V 0 mA I
1.745 1.80 1.85 V 0 mA I
OUT
LIM
IN
LNR
LDR
t
WK
t
S
-0.10 0.001 0.10 %/V VIN = V
= +25°C. Limits over the operating temperature range are ensured through cor-
A
– V
IN
OUT
to T
MIN
+0.5V
2.7
, unless otherwise noted. Typical values are at TA = +25°C.
MAX
—
—
6.0
6.0
VV
OUT
V
OUT
2.5V
= 1.8V (Note 2)
120 — — mA
— 280 — mA Note 3
—5090µAI
— 55 120 mV I
— 110 240 mV I
———%/VI
— 0.01 0.040 %/mA I
RMS
— 220 — µV
RMS
—10—µsecV
= 0
OUT
= 1 mA
OUT
= 50 mA
OUT
= 100 mA (Note 4)
OUT
OUT
= 1 mA
OUT
= 0 mA to 50 mA
OUT
10 Hz to 1 MHz, C
10 Hz to 1 MHz C
= 3.6V
IN
= 1 µF, C
C
IN
= 30 mA, (See Figure 3-1)
I
L
— 140 — µsec VIN = 3.6V
= 1 µF, C
C
IN
I
= 30 mA, (See Figure 3-1)
L
) when V
is 100 mV below the value of V
OUT
50 mA T
OUT
50 mA S
OUT
50 mA R
OUT
50 mA Q
OUT
0.5V to 6.0V
OUT
OUT
for
OUT
OUT
OUT
= 1 µF
= 1 µF
= 1 ΜF
= 100 ΜF
DS21364C-page 2 2002-2012 Microchip Technology Inc.
DC SPECIFICATIONS (CONTINUED)
TC1188/TC1189
Electrical Characteristics: V
= +3.6V, GND = 0V, TA = T
IN
MIN
to T
, unless otherwise noted. Typical values are at TA = +25°C.
MAX
(Note 1)
Parameters Symbol Min Typ Max Units Conditions
Shutdown:
Input Threshold V
SHDN
Input Bias Current I
SHDN
Shutdown Supply Current I
Shutdown to Output Discharge
IH
V
IL
shdn
qshdn
2.0 — — V
——0.4V
— 0.1 100 nA V
—50—nAV
— 0.002 1 AV
—0.02—AV
—1—msecC
= VIN, TA = +25°C, TA = T
SHDN
= VIN, TA = +25°C, TA = T
SHDN
= 0V, TA = +25°C, TA = T
OUT
= 0V, TA = +25°C, TA = T
OUT
= 1 F, no load at 10% of V
OUT
Delay (TC1189)
Thermal Protection
Thermal Shutdown Temperature T
Thermal Shutdown Hysteresis T
SHDN
SHDN
Note 1: Limits are 100% production tested at T
relation using Statistical Quality Control (SQC) methods.
— 170 — °C
—20—°C
= +25°C. Limits over the operating temperature range are ensured through cor-
A
2: Validated by line regulation test.
3: Not tested. For design purposes, the current limit should be considered 150 mA minimum to 410 mA maximum.
– V
4: The dropout voltage is defined as (V
V
= V
+2V.
IN
OUT
) when V
IN
OUT
is 100 mV below the value of V
OUT
OUT
for
MAX
MAX
MAX
MAX
OUT
2002-2012 Microchip Technology Inc. DS21364C-page 3
TC1188/TC1189
0.10
0.08
0.06
0.04
0.00
–0.02
–0.04
–0.06
–0.08
–0.10
0.02
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
LINE REGULATION (%)
Line Reg. @ 3.50 V
to 5.50V(%)
2.930
2.910
2.890
2.870
2.850
2.830
2.810
2.790
2.770
2.750
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
V
OUT
(V)
V
OUT
- SET/1.0mA
@ 3.5V (V)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
LOAD REGULATION (%)
Load Reg. 0 to 50mA (%)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
LOAD REGULATION (%)
Load Reg. 0 to 50mA (%)
Load Reg. 0 to 100mA (%)
0.120
0.100
0.080
0.060
0.040
0.020
0.000
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
(V)
50mA, Dropout V (V)
FREQUENCY (kHz)
Noise (
μ
V/√HZ)
10.0
1.0
0.01
0.01 1
10
100 1000
0.1
0.0
R
LOAD
= 50
μΩ
C
OUT
= 1μF
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
FIGURE 2-1: Line Regulation vs. Temperature. (TC1188)
FIGURE 2-2: Output Voltage vs. Temperature. (TC1188)
FIGURE 2-4: Load Regulation vs. Temperature. (TC1188)
FIGURE 2-5: Dropout Voltage vs. Temperature. (TC1188)
FIGURE 2-3: Load Regulation vs. Temperature. (TC1188)
DS21364C-page 4 2002-2012 Microchip Technology Inc.
FIGURE 2-6: Output Noise vs. Frequency. (TC1188)
TC1188/TC1189
FREQUENCY (kHz)
(dB)
10
100 1K
10K
1M 10M
100K
C
OUT
= 1μF
-10
-20
-30
-40
-60
-70
-50
-80
-90
-100
V
OUT
= 2.84V
R
LOAD
= 50
Ω
100mV p-p
CH2 GND
CH1 GND
200μsec/Div
SHDN
SHDN = 0V
V
OUT
= 0.5V/DIV
T = 25°
C
IN
= 1μF
C
L
=1μF
R
L
= ∞
CH2 GND
CH1 GND
CH1
CH2
200μsec/Div
CIN = 1μF
C
OUT
=1μF
R
L
= 100
Ω
VIN = 3.5V
T
T
XSHDN = 3V
Turn On
Time = 150μS
No Overshoot
V
OUT
= 2.7V
XSHDN = 0V
V
OUT
= 0V
CH2 GND
CH2
CH1 GND
CH1
100μsec/Div
CIN = C
OUT
= 1μF, RL = 470Ω, XSHDN = 3.5V
T
T
V
OUT
AC
20μV/DIV
VIN = 4.5V
V
IN
= 3.5V
TIME (100μs/Div)
OUTPUT, SHUTDOWN VOLTAGE (V)
SHDN
V
OUT
0V
2.8V
0V
3V
VIN = 3.6V
I
LOAD
= 30mA
C
IN =
1μF
C
LOAD
= 1μF
FIGURE 2-7: Power Supply Rejection Ratio vs. Frequency. (TC1188)
FIGURE 2-8: TC1189 Shutdown T ransient Response.
FIGURE 2-10: TC1189 Line Response.
FIGURE 2-11: Wake-Up Response Time.
FIGURE 2-9: TC1189 Shutdown T ransient
Response.
2002-2012 Microchip Technology Inc. DS21364C-page 5
TC1188/TC1189
V
IH
t
S
t
WK
V
OUT
98%
2%
V
IL
SHDN
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
Symbol Description
SHDN Active Low Shutdown Input. When the SHDN input is low (< 0.2V), the quiscent current for the
TC1188/TC1189 is reduced to 0.1 nA. When the input voltage to the S
output of the TC1188/TC1189 is enabled. For the TC1189 only, the output capacitor is discharged by
an internal switch when the SHDN is low.
GND Ground. Connect to ground.
Unregulated Input Voltage. The input voltage can range from 2.7V to 6.0V.
Regulator Output. Sources up to 120 mA. Bypass with a 1 µF, <1 typical ESR capacitor to GND.
V
V
IN
OUT
GND Connect to GND.
HDN pin is high (> 2.0V) the
3.1 Detailed Description
The TC1188/TC1189 devices are fixed output, low
dropout linear regulators. Utilizing CMOS construction,
the internal quiescent current consumed by the regulator is minimized when compared to older bipolar low
dropout regulators.
The LDO output voltage is sensed at the non-inverting
pin of the internal error amplifier. The internal voltage
reference is sensed at the inverting pin of the internal
error amplifier. The error amplifier adjusts the gate
source voltage of the internal P-channel pass device
until the divided down output voltage matches the internal reference voltage. When it does, the LDO output
voltage is in regulation.
The SHDN,
Channel MOSFET and lower the internal quiescent
current to less than 1 µA maximum. For normal operation, the SHDN
The TC1189 incorporates an internal N-Channel MOSFET, which is used to discharge the output capacitor
when shutdown. The TC1188 does not have the internal N-Channel MOSFET, therefore, when the device is
shutdown, the output voltage will decrease at a rate
which is dependant on the load current.
when pulled low, is used to turn off the P-
pin is pulled to a high level. (> 2.0V).
released from shutdown. The settling time of the output
voltage is dependent on load conditions and output
capacitance on V
(RC response).
OUT
FIGURE 3-1: Wake-U p Response Time.
3.3 Internal P-Channel Pass Transistor
The Internal P-Channel MOSFET is operated in the linear region to regulate the LDO output voltage. The
RDSon of the P-Channel MOSFET is approximately
1.1 making the LDO able to regulate with little input
to output voltage differential, "Low Dropout". Another
benefit of using CMOS construction is that the P-Channel MOSFET is a voltage controlled device, so it
doesn't consume a fraction of the bias current required
of bipolar PNP LDOs.
3.2 Turn-On Response
The turn-on response is defined as two separate
response categories: Wake-Up Time (t
Time (t
).
S
The TC1188/TC1189 have fast wake-up times (10 µsec
typical) when released from shutdown. See Figure 3-1
for the wake-up time, designated as t
time is defined as the time it takes for the output to rise
to 2% of the V
value after being released from shut-
OUT
down.
The total turn on response is defined as the Settling
Time (t
) (Figure 3-1). Settling Time (inclusive with tWK)
S
is defined as the condition when the output is within 2%
of its fully enabled value (140 µsec typical) when
DS21364C-page 6 2002-2012 Microchip Technology Inc.
) and Settling
WK
. The wake-up
WK
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