Microchip TC1188-QECT, TC1188-RECT, TC1188-SECT, TC1188-TECT, TC1189-QECT Schematic [ru]
...
TC1188/TC1189
GND
SHDN GND
5
1
4
2
3
TC1188
TC1189
5-Pin SOT-23A
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
V
IN
V
OUT
V
OUT
V
IN
Output
GND
SHDN
TC1188
TC1189
+
1µF
–
C
OUT
GND
Voltage
1µF
C
IN
Battery
MAX8863/64 Pin Compatible, Low Dropout,
120 mA Linear Regulators
Features
• Input Voltage Range: 2.7 V to 6.0 V
• 120 mA Output Current
• Low Supply Current: 50 µA, (typical)
• Low Dropout Voltage: 110 mV, (typical at 100 mA)
• Fast Turn-On from Shutdown: 140 µsec (typical)
• Low Output Noise
• Over-Current and Over-Temperature Protection
• Low Power Shutdown Mode
• Auto Discharge of Output Capacitor (TC1189)
Applications
• Battery Powered Systems
• Portable Computers
• Medical Instruments
• Cellular, Cordless Phones
•PDAs
• Pagers
Package Type
General Description
The TC1188 and TC1189 are fixed output, low dropout
linear regulators that operate from a 2.7V to 6.0V input
voltage source. The output is capable of delivering up
to 120 mA while consuming only 50 µA of quiescent
current. The low dropout voltage, 120 mV, make the
TC1188 and TC1189 good choices for battery powered
applications. Integrated over-current and over-temperature protection features provide for a fault tolerant
solution.
The TC1189 includes an output voltage auto discharge
feature. When shutdown, the TC1189 will automatically
discharge the output voltage using an internal N-Channel MOSFET switch.
Fixed output voltage options for the TC1188/TC1189
are: 1.80V, 2.80V, 2.84V and 3.15V. Both the TC1188
and TC1189 are available in SOT23-5 packages.
Typical Application Circuit
2002-2012 Microchip Technology Inc. DS21364C-page 1
TC1188/TC1189
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Short-Circuit Duration.............................Infinite
Output Voltage........................... (-0.3V) to (V
Maximum Voltage On Any Pin.... (-0.3V) to (V
Continuous Power Dissipation (T
= +70°C)
A
+ 0.3V)
IN
+0.3V)
IN
*Notice: *Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
SOT-23-5 (derate 7.1 mW/°C above +70°C)
..................................................................571 mW
Operating Temperature Range............... -40°C to 85°C
Storage Temperature..........................-65°C to +160°C
Lead Temperature (Soldering, 10 Sec.) ........... +300°C
DC SPECIFICATIONS
Electrical Characteristics: V
(Note 1)
Parameters Symbol Min Typ Max Units Conditions
Input Voltage V
Output Voltage V
Maximum Output Current I
Current Limit I
Input Current I
Dropout Voltage — 1.1 — mV I
Line Regulation V
Load Regulation V
Output Voltage Noise — 350 — µV
Wake Up Time
(from Shutdown Mode)
Setting Time
(from Shutdown Mode)
Note 1: Limits are 100% production tested at T
relation using Statistical Quality Control (SQC) methods.
2: Validated by line regulation test.
3: Not tested. For design purposes, the current limit should be considered 150 mA minimum to 410 mA maximum.
4: The dropout voltage is defined as (V
V
= V
+2V.
IN
OUT
= +3.6V, GND = 0V, TA = T
IN
V
IN
OUT
OUT
3.05 3.15 3.25 V 0 mA I
2.75 2.84 2.93 V 0 mA I
2.70 2.80 2.88 V 0 mA I
1.745 1.80 1.85 V 0 mA I
OUT
LIM
IN
LNR
LDR
t
WK
t
S
-0.10 0.001 0.10 %/V VIN = V
= +25°C. Limits over the operating temperature range are ensured through cor-
A
– V
IN
OUT
to T
MIN
+0.5V
2.7
, unless otherwise noted. Typical values are at TA = +25°C.
MAX
—
—
6.0
6.0
VV
OUT
V
OUT
2.5V
= 1.8V (Note 2)
120 — — mA
— 280 — mA Note 3
—5090µAI
— 55 120 mV I
— 110 240 mV I
———%/VI
— 0.01 0.040 %/mA I
RMS
— 220 — µV
RMS
—10—µsecV
= 0
OUT
= 1 mA
OUT
= 50 mA
OUT
= 100 mA (Note 4)
OUT
OUT
= 1 mA
OUT
= 0 mA to 50 mA
OUT
10 Hz to 1 MHz, C
10 Hz to 1 MHz C
= 3.6V
IN
= 1 µF, C
C
IN
= 30 mA, (See Figure 3-1)
I
L
— 140 — µsec VIN = 3.6V
= 1 µF, C
C
IN
I
= 30 mA, (See Figure 3-1)
L
) when V
is 100 mV below the value of V
OUT
50 mA T
OUT
50 mA S
OUT
50 mA R
OUT
50 mA Q
OUT
0.5V to 6.0V
OUT
OUT
for
OUT
OUT
OUT
= 1 µF
= 1 µF
= 1 ΜF
= 100 ΜF
DS21364C-page 2 2002-2012 Microchip Technology Inc.
DC SPECIFICATIONS (CONTINUED)
TC1188/TC1189
Electrical Characteristics: V
= +3.6V, GND = 0V, TA = T
IN
MIN
to T
, unless otherwise noted. Typical values are at TA = +25°C.
MAX
(Note 1)
Parameters Symbol Min Typ Max Units Conditions
Shutdown:
Input Threshold V
SHDN
Input Bias Current I
SHDN
Shutdown Supply Current I
Shutdown to Output Discharge
IH
V
IL
shdn
qshdn
2.0 — — V
——0.4V
— 0.1 100 nA V
—50—nAV
— 0.002 1 AV
—0.02—AV
—1—msecC
= VIN, TA = +25°C, TA = T
SHDN
= VIN, TA = +25°C, TA = T
SHDN
= 0V, TA = +25°C, TA = T
OUT
= 0V, TA = +25°C, TA = T
OUT
= 1 F, no load at 10% of V
OUT
Delay (TC1189)
Thermal Protection
Thermal Shutdown Temperature T
Thermal Shutdown Hysteresis T
SHDN
SHDN
Note 1: Limits are 100% production tested at T
relation using Statistical Quality Control (SQC) methods.
— 170 — °C
—20—°C
= +25°C. Limits over the operating temperature range are ensured through cor-
A
2: Validated by line regulation test.
3: Not tested. For design purposes, the current limit should be considered 150 mA minimum to 410 mA maximum.
– V
4: The dropout voltage is defined as (V
V
= V
+2V.
IN
OUT
) when V
IN
OUT
is 100 mV below the value of V
OUT
OUT
for
MAX
MAX
MAX
MAX
OUT
2002-2012 Microchip Technology Inc. DS21364C-page 3
TC1188/TC1189
0.10
0.08
0.06
0.04
0.00
–0.02
–0.04
–0.06
–0.08
–0.10
0.02
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
LINE REGULATION (%)
Line Reg. @ 3.50 V
to 5.50V(%)
2.930
2.910
2.890
2.870
2.850
2.830
2.810
2.790
2.770
2.750
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
V
OUT
(V)
V
OUT
- SET/1.0mA
@ 3.5V (V)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
LOAD REGULATION (%)
Load Reg. 0 to 50mA (%)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
LOAD REGULATION (%)
Load Reg. 0 to 50mA (%)
Load Reg. 0 to 100mA (%)
0.120
0.100
0.080
0.060
0.040
0.020
0.000
–40
°
C0°C
25
°
C
70
°
C
85
°
C
TEMPERATURE (
°
C)
(V)
50mA, Dropout V (V)
FREQUENCY (kHz)
Noise (
μ
V/√HZ)
10.0
1.0
0.01
0.01 1
10
100 1000
0.1
0.0
R
LOAD
= 50
μΩ
C
OUT
= 1μF
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
FIGURE 2-1: Line Regulation vs. Temperature. (TC1188)
FIGURE 2-2: Output Voltage vs. Temperature. (TC1188)
FIGURE 2-4: Load Regulation vs. Temperature. (TC1188)
FIGURE 2-5: Dropout Voltage vs. Temperature. (TC1188)
FIGURE 2-3: Load Regulation vs. Temperature. (TC1188)
DS21364C-page 4 2002-2012 Microchip Technology Inc.
FIGURE 2-6: Output Noise vs. Frequency. (TC1188)
TC1188/TC1189
FREQUENCY (kHz)
(dB)
10
100 1K
10K
1M 10M
100K
C
OUT
= 1μF
-10
-20
-30
-40
-60
-70
-50
-80
-90
-100
V
OUT
= 2.84V
R
LOAD
= 50
Ω
100mV p-p
CH2 GND
CH1 GND
200μsec/Div
SHDN
SHDN = 0V
V
OUT
= 0.5V/DIV
T = 25°
C
IN
= 1μF
C
L
=1μF
R
L
= ∞
CH2 GND
CH1 GND
CH1
CH2
200μsec/Div
CIN = 1μF
C
OUT
=1μF
R
L
= 100
Ω
VIN = 3.5V
T
T
XSHDN = 3V
Turn On
Time = 150μS
No Overshoot
V
OUT
= 2.7V
XSHDN = 0V
V
OUT
= 0V
CH2 GND
CH2
CH1 GND
CH1
100μsec/Div
CIN = C
OUT
= 1μF, RL = 470Ω, XSHDN = 3.5V
T
T
V
OUT
AC
20μV/DIV
VIN = 4.5V
V
IN
= 3.5V
TIME (100μs/Div)
OUTPUT, SHUTDOWN VOLTAGE (V)
SHDN
V
OUT
0V
2.8V
0V
3V
VIN = 3.6V
I
LOAD
= 30mA
C
IN =
1μF
C
LOAD
= 1μF
FIGURE 2-7: Power Supply Rejection Ratio vs. Frequency. (TC1188)
FIGURE 2-8: TC1189 Shutdown T ransient Response.
FIGURE 2-10: TC1189 Line Response.
FIGURE 2-11: Wake-Up Response Time.
FIGURE 2-9: TC1189 Shutdown T ransient
Response.
2002-2012 Microchip Technology Inc. DS21364C-page 5
TC1188/TC1189
V
IH
t
S
t
WK
V
OUT
98%
2%
V
IL
SHDN
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
Symbol Description
SHDN Active Low Shutdown Input. When the SHDN input is low (< 0.2V), the quiscent current for the
TC1188/TC1189 is reduced to 0.1 nA. When the input voltage to the S
output of the TC1188/TC1189 is enabled. For the TC1189 only, the output capacitor is discharged by
an internal switch when the SHDN is low.
GND Ground. Connect to ground.
Unregulated Input Voltage. The input voltage can range from 2.7V to 6.0V.
Regulator Output. Sources up to 120 mA. Bypass with a 1 µF, <1 typical ESR capacitor to GND.
V
V
IN
OUT
GND Connect to GND.
HDN pin is high (> 2.0V) the
3.1 Detailed Description
The TC1188/TC1189 devices are fixed output, low
dropout linear regulators. Utilizing CMOS construction,
the internal quiescent current consumed by the regulator is minimized when compared to older bipolar low
dropout regulators.
The LDO output voltage is sensed at the non-inverting
pin of the internal error amplifier. The internal voltage
reference is sensed at the inverting pin of the internal
error amplifier. The error amplifier adjusts the gate
source voltage of the internal P-channel pass device
until the divided down output voltage matches the internal reference voltage. When it does, the LDO output
voltage is in regulation.
The SHDN,
Channel MOSFET and lower the internal quiescent
current to less than 1 µA maximum. For normal operation, the SHDN
The TC1189 incorporates an internal N-Channel MOSFET, which is used to discharge the output capacitor
when shutdown. The TC1188 does not have the internal N-Channel MOSFET, therefore, when the device is
shutdown, the output voltage will decrease at a rate
which is dependant on the load current.
when pulled low, is used to turn off the P-
pin is pulled to a high level. (> 2.0V).
released from shutdown. The settling time of the output
voltage is dependent on load conditions and output
capacitance on V
(RC response).
OUT
FIGURE 3-1: Wake-U p Response Time.
3.3 Internal P-Channel Pass Transistor
The Internal P-Channel MOSFET is operated in the linear region to regulate the LDO output voltage. The
RDSon of the P-Channel MOSFET is approximately
1.1 making the LDO able to regulate with little input
to output voltage differential, "Low Dropout". Another
benefit of using CMOS construction is that the P-Channel MOSFET is a voltage controlled device, so it
doesn't consume a fraction of the bias current required
of bipolar PNP LDOs.
3.2 Turn-On Response
The turn-on response is defined as two separate
response categories: Wake-Up Time (t
Time (t
).
S
The TC1188/TC1189 have fast wake-up times (10 µsec
typical) when released from shutdown. See Figure 3-1
for the wake-up time, designated as t
time is defined as the time it takes for the output to rise
to 2% of the V
value after being released from shut-
OUT
down.
The total turn on response is defined as the Settling
Time (t
) (Figure 3-1). Settling Time (inclusive with tWK)
S
is defined as the condition when the output is within 2%
of its fully enabled value (140 µsec typical) when
DS21364C-page 6 2002-2012 Microchip Technology Inc.
) and Settling
WK
. The wake-up
WK
FIGURE 3-2: Functional Block Diagram.
Bandgap
Reference
MOS Driver
W
ith ILIMIT
Thermal
Sensor
Shutdown
Logic
Error
+
–
V
IN
SHDN
GND
V
OUT
PMOS Pass
GND
N
(TC1189 Only)
Amplifier
Transistor
PD = V
IN(MAX)
- V
OUT(MIN)
x I
LOAD(MAX)
Where:
P
D
= Worst case internal power dissipation.
V
IN(MAX)
= Maximum input voltage.
V
OUT(MIN)
= Minimum output voltage.
I
LOAD(MAX)
= Maximum output current.
PD = (T
J(MAX)
- T
A(MAX)
)/
JA
Where all terms are previously defined.
TC1188/TC1189
3.4 Shutdown
The SHDN input is used to turn off the LDO P-Channel
pass MOSFET and internal bias. When shutdown, the
typical quiescent current consumed by the LDO is
0.1 nA. A logic low (< 0.4V) at the SHDN
cause the device to operate in the shutdown mode. A
logic high (> 2.0V) at the SHDN
input will cause the
device to operate in the normal mode.
input will
3.7 Operating Region and Power Dissipation
The internal power dissipation to the LDO is primarily
determined by the input voltage, output voltage and
output current. The following equation is used to
approximate the worst case for power dissipation:
EQUATION
3.5 Current Limit
The LDO output current is monitored internal to the
TC1188/TC1189. The internal current sense will limit
the LDO output current to a typical value of 280 mA.
The current limit can range from approximately 50 mA
to 410 mA from device to device. The internal current
limit protects the device from a continuous output short
circuit.
3.6 Thermal Overload Protection
Integrated thermal protection circuitry shuts the
TC1188/TC1189 off when the internal die temperature
exceeds approximately 170°C. The regulator output
remains off until the internal die temperature drops to
approximately 150°C.
The maximum power dissipation is a function of the
maximum ambient temperature, T
junction temperature, T
, and the package thermal
J(MAX)
resistance from junction to air,
package has a
of approximately 220°C/Watt.
JA
JA
, the maximum
A(MAX)
. The 5-Pin SOT23A
EQUATION
2002-2012 Microchip Technology Inc. DS21364C-page 7
TC1188/TC1189
PD = V
IN(MAX)
- V
OUT(MIN)
x I
LOAD(MAX)
PD = ((3.0 * 1.1) - (2.7 * 0.975)) * 40 mA
PD = 26.7 mWatts
PD = (T
J(MAX)
- T
A(MAX)
)/
JA
P
D(MAX)
= (125 - 55) / 220
P
D(MAX)
= 318 mWatts.
EXAMPLE 3-1:
The previously defined power dissipation equations
can be used to ensure that the regulator thermal
operation is within limits.
Given:
IN(MAX)
OUT(MAX)
= 125°C
J(MAX)
= 55°C
A(MAX)
= 3.0V +10%
= 2.7V - 2.5%
= 40 MA
V
V
I
LOAD(MAX)
T
T
Find:
1. Actual power dissipation.
2. Maximum allowable dissipation.
Actual power dissipation:
Maximum allowable power dissipati on:
4.0 APPLICATIONS INFORMATION
4.1 Input Capacitor
A 1 µF (or larger) capacitor is recommended to bypass
the LDO input and lower input impedance for circuit
stability when operating from batteries or high impedance sources. The input capacitor can be ceramic, tantalum or aluminum electrolytic. For applications that
require low noise and input power supply rejection, low
effective series resistance (ESR) ceramic capacitors
are recommended over higher ESR electrolytic capacitors. Larger value input capacitors can be used to
improve circuit performance.
4.2 Output Capacitor
A 1 µF (minimum) capacitor is required from V
ground to ensure circuit stability. The output capacitor
should have an ESR greater than 0.1 ohms and less
than 2 ohm. Tantalum or aluminum electrolytic capacitors are recommended. Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid
tantalums are recommended for applications operating
below 25°C.
OUT
to
In this example, the TC1188/TC1189 dissipates a maximum of 26.7 mW below the allowable limit of 318 mW.
In a similar manner, the power dissipation equation, as
a function of V
OUT
and I
IN
along with the power
LOAD,
, V
dissipation equation, as a function of maximum junction
temperature, maximum ambient temperature and junction to air thermal resistance, can be used to calculate
maximum current and/or maximum input voltage limits.
DS21364C-page 8 2002-2012 Microchip Technology Inc.
5.0 PACKAGING INFORMATION
2
45
31
Part Number (V) Code
TC1188-XECT 1.80 G4
TC1188-XECT 2.80 G3
TC1188-XECT 2.84 G2
TC1188-XECT 3.15 G1
TC1189-XECT 1.80 H4
TC1189-XECT 2.80 H3
TC1189-XECT 2.84 H2
TC1189-XECT 3.15 H1
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
5.1 Package Marking Information
TC1188/TC1189
2002-2012 Microchip Technology Inc. DS21364C-page 9
TC1188/TC1189
10501050
Mold Draft Angle Bottom
10501050
Mold Draft Angle Top
0.500.430.35.020.017.014BLead Width
0.200.150.09.008.006.004
c
Lead Thickness
10501050
Foot Angle
0.550.450.35.022.018.014LFoot Length
3.102.952.80.122.116.110DOverall Length
1.751.631.50.069.064.059E1Molded Package Width
3.002.802.60.118.110.102EOverall Width
0.150.080.00.006.003.000A1Standoff §
1.301.100.90.051.043.035A2Molded Package Thickness
1.451.180.90.057.046.035AOverall Height
1.90.075
p1
Outside lead pitch (basic)
0.95
.038
p
Pitch
55
n
Number of Pins
MAXNOMMINMAXNOMMINDimension Limits
MILLIMETERSINCHES*Units
1
p
D
B
n
E
E1
L
c
A2
A
A1
p1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MO-178
Drawing No. C04-091
§ Significant Characteristic
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
DS21364C-page 10 2002-2012 Microchip Technology Inc.
REVISION HISTORY
Revision C (November 2012)
Added a note to the package outline drawing.
TC1188/TC1189
2002-2012 Microchip Technology Inc. DS21364C-page 11
TC1188/TC1189
NOTES:
DS21364C-page 12 2002-2012 Microchip Technology Inc.
TC1188/TC1189
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2002-2012 Microchip Technology Inc. DS21364C-page 13
TC1188/TC1189
TO: Technical Publications Manager
RE: Reader Response
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DS21364CTC1188/TC1189
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DS21364C-page 14 2002-2012 Microchip Technology Inc.
TC1188/TC1189
PART NO. X /XX
PackageVoltage
Output
Device
Device: TC1188: 100 mA, MAX8863/64 Pin Compatible LDO
TC1189: 100 mA, MAX8863/64 Pin Compatible LDO
Voltage Output
Options:
Q=1.80V
R=2.80V
S=2.84V
T=3.15V
Package: ECTTR = SOT-23A, 5-Pin (Tape and Reel)
Examples:
a) TC1188QECTTR: 1.80V, 100 mA,
MAX8863/64 Pin Compatible LDO
b) TC1188RECTTR: 2.80V, 100 mA,
MAX8863/64 Pin Compatible LDO
c) TC1188SECTTR: 2.84V, 100 mA,
MAX8863/64 Pin Compatible LDO
d) TC1188TECTTR: 3.15V, 100 mA,
MAX8863/64 Pin Compatible LDO
a) TC1189QECTTR: 1.80V, 100 mA,
MAX8863/64 Pin Compatible LDO
b) TC1189RECTTR: 2.80V, 100 mA,
MAX8863/64 Pin Compatible LDO
c) TC1189SECTTR: 2.84V, 100 mA,
MAX8863/64 Pin Compatible LDO
d) TC1189TECTTR: 3.15V, 100 mA,
MAX8863/64 Pin Compatible LDO
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002-2012 Microchip Technology Inc. DS21364C-page15
TC1188/TC1189
NOTES:
DS21364C-page 16 2002-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, K
PICSTART, PIC
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767450
EELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
32
logo, rfPIC, SST, SST Logo, SuperFlash
QUALITY MANAGEMENT S
2002-2012 Microchip Technology Inc. DS21364C-page 17
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
®
MCUs and dsPIC® DSCs, KEELOQ
®
code hopping
Worldwide Sales and Service
AMERICAS
Corporate Office
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Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
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Web Address:
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Tel: 972-818-7423
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Tel: 248-538-2250
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Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
ASIA/PACIFIC
Asia Pacific Office
Suites 3707-14, 37th Floor
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Tel: 86-10-8569-7000
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Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-5407-5533
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Tel: 86-27-5980-5300
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Tel: 86-592-2388138
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ASIA/PACIFIC
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Tel: 91-80-3090-4444
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Tel: 81-66-152-7160
Fax: 81-66-152-9310
Japan - Yokohama
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Fax: 81-45-471-6122
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Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
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Tel: 63-2-634-9065
Fax: 63-2-634-9069
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Tel: 65-6334-8870
Fax: 65-6334-8850
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Tel: 886-3-5778-366
Fax: 886-3-5770-955
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Tel: 886-7-213-7828
Fax: 886-7-330-9305
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
EUROPE
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
10/26/12
DS21364C-page 18 2002-2012 Microchip Technology Inc.
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