Microchip TC1072-1.8VCH713, TC1072-2.5VCH713, TC1072-2.6VCH713, TC1072-2.7VCH713, TC1072-2.85VCH713 Schematic [ru]

...
TC1072/TC1073
R
6
1
4
2
3
6-Pin SOT-23
V
OUT
ERROR
SHDNGNDV
IN
5
Bypass
50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and V
Features:
• 50 µA Ground Current for Longer Battery Life
• Very Low Dropout Voltage
• Choice of 50 mA (TC1072) and 100 mA (TC1073) Output
• High Output Voltage Accuracy
• Power-Saving Shutdown Mode
• ERROR
Output Can Be Used as a Low Battery
Detector or Processor Reset Generator
• Bypass Input for Ultra Quiet Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 6-Pin SOT-23 Package
• Pin Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
• Other output voltages are available. Please contact Microchip Technology Inc. for details.
Applications:
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulators for SMPS
• Pagers
General Description
The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50 µA at full load (20 to 60 times lower than in bipolar regulators).
The devices’ key features include ultra low noise operation (plus optional Bypass input); very low dropout voltage (typically 85 mV, TC1072 and 180 mV, TC1073 at full load) and fast response to step changes in load. An error output (ERROR
) is asserted when the devices are out-of-regulation (due to a low input voltage or excessive output current). ERROR used as a low battery warning or as a processor
signal (with the addition of an external RC
RESET network). Supply current is reduced to 0.5 µA (max) and both V
and ERROR
OUT
are disabled when the shutdown input is low. The devices incorporate both overtemperature and overcurrent protection.
The TC1072 and TC1073 are stable with an output capacitor of only 1 µF and have a maximum output current of 50 mA, and 100 mA, respectively. For higher output current versions, please see the TC1185, TC1186, TC1187 (I TC1108 and TC1173 (I
= 150 mA) and TC1107,
OUT
= 300 mA) data sheets.
OUT
Package Type
Bypass
REF
can be
Typical Application Circuit
R
P
V
1
IN
V
IN
TC1072 TC1073
2
GND
3
Shutdown Control
(from Power Control Logic)
© 2007 Microchip Technology Inc. DS21354D-page 1
SHDN
V
OUT
Bypass
ERROR
6
5
4
+
1 µF
C
BYPASS
470 pF
V
OUT
ERRO
TC1072/TC1073
TC V
OUT
= (V
OUTMAX
– V
OUTMIN
) x 10
6
V
OUT
x ΔT

1.0 ELECTRICAL CHARACTERISTICS

Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage...........................(-0.3V) to (V
+ 0.3V)
IN
above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < T
< 125°C
J
Storage Temperature..........................-65°C to +150°C
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, VIN=V Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Test Conditions
V
IN
I
OUTMAX
V
OUT
TCV
OUT
ΔV
OUT
ΔV
OUT/VOUT
V
IN-VOUT
I
IN
I
INSD
Input Operating Voltage 2.7 6.0 V Note 9
Maximum Output Current 50
Output Voltage VR –
V
Temperature Coefficient
OUT
/ΔVINLine Regulation 0.05 0.35 %(VR + 1V) VIN ≤ 6V
Load Regulation 0.5 2.0 %IL = 0.1 mA to I
Dropout Voltage
Supply Current 50 80 µA SHDN
Shutdown Supply Current 0.05 0.5 µA SHDN
PSRR Power Supply Rejection Ratio 64 dB F
I
OUTSC
ΔV
T
SD
ΔT
OUT
SD
Output Short Circuit Current 300 450 mA V
/ΔPDThermal Regulation 0.04 V/W Notes 5, 6
Thermal Shutdown Die Temperature 160 °C
Thermal Shutdown Hysteresis 10 °C
eN Output Noise 260 nV/Hz
Note 1: VR is the regulator output voltage setting. For example: VR= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2:
+ 1V, IL= 0.1 mA, CL=3.3μF, SHDN
OUT
100
— —
— —
VR ±0.5% VR + 2.5% V Note 1
2.5%
40
2
20
— — —
65 85
180
— —
— —
120 250
>VIH, TA=+25°C.
mAmATC1072
TC1073
ppm/°C Note 2
(Note 3)
mV I
=0.1mA
L
I
=20mA
L
IL=50mA IL= 100 mA (Note 4), TC1073
RE
OUT
IL=I 470 pF from Bypass to GND
=VIH, IL= 0 (Note 8)
=0V
1kHz
=0V
OUTMAX
OUTMAX
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. 5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
7: Hysteresis voltage is referenced by V 8: Apply for Junction Temperatures of -40°C to +85°C.
9: The minimum VIN has to justify the conditions = VIN≥ VR+V
, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
A
.
R
DROPOUT
at VIN=6V for T=10 ms.
LMAX
and VIN≥ 2.7V for IL= 0.1 mA to I
OUTMAX
.
DS21354D-page 2 © 2007 Microchip Technology Inc.
TC1072/TC1073
TC V
OUT
= (V
OUTMAX
– V
OUTMIN
) x 10
6
V
OUT
x ΔT
TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise noted, VIN=V Boldface type specifications apply for junction temperatures of -40°C to +125°C.
+ 1V, IL= 0.1 mA, CL=3.3μF, SHDN
OUT
>VIH, TA= +25°C.
Symbol Parameter Min Typ Max Units Test Conditions
SHDN Input
V
IH
V
IL
ERROR
V
INMIN
V
OL
V
TH
V
HYS
t
DELAY
Note 1: VR is the regulator output voltage setting. For example: VR= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
SHDN
Input High Threshold 45 %VINVIN= 2.5V to 6.5V
Input Low Threshold 15 %VINVIN= 2.5V to 6.5V
SHDN
Open Drain Output
Minimum VIN Operating Voltage 1.0 V
Output Logic Low Voltage 400 mV 1 mA Flows to ERROR
ERROR Threshold Voltage 0.95 x V
V See Figure 4-2
R
ERROR Positive Hysteresis 50 mV Note 7
V
to ERROR
OUT
2:
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. 5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
7: Hysteresis voltage is referenced by V 8: Apply for Junction Temperatures of -40°C to +85°C.
9: The minimum VIN has to justify the conditions = VIN≥ VR+V
Delay 2.5 ms Vout falling from VR to
VR-10%
at VIN=6V for T=10 ms.
LMAX
, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
A
.
R
and VIN≥ 2.7V for IL= 0.1 mA to I
DROPOUT
OUTMAX
.
© 2007 Microchip Technology Inc. DS21354D-page 3
TC1072/TC1073
2.0 TYPICAL CHARACTERISTICS CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
DROPOUT VOLTAGE (V)
0.002
0.000
0.200
0.180
0.160
0.140
0.120
0.100
0.080
0.060
0.040
DROPOUT VOLTAGE (V)
0.020
0.000
Dropout Voltage vs. Temperature (V
I
= 10mA
LOAD
C
= 1µF
IN
C
= 1µF
OUT
-40 -20 0 20 50 70 125
Dropout Voltage vs. Temperature (V
I
= 100mA
LOAD
C
= 1µF
IN
C
= 1µF
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
TEMPERATURE (°C)
OUT
OUT
= 3.3V)
= 3.3V)
Dropout Voltage vs. Temperature (V
0.100
I
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
DROPOUT VOLTAGE (V)
0.010
0.000
0.300
0.250
0.200
0.150
0.100
0.050
DROPOUT VOLTAGE (V)
0.000
= 50mA
LOAD
C
= 1µF
IN
C
= 1µF
OUT
-40 -20 0 20 50 70 125
Dropout Voltage vs. Temperature (V
I
= 150mA
LOAD
C
= 1µF
IN
C
= 1µF
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
TEMPERATURE (°C)
OUT
OUT
= 3.3V)
= 3.3V)
(V
90
80
70
A)
µ
60
50
40
30
GND CURRENT (
20
10
0
Ground Current vs. VIN (V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
(V)
IN
OUT
= 3.3V)
I
LOAD
C C
= 10mA
= 1µF
IN OUT
= 1µF
90
80
70
A)
µ
60
50
40
30
GND CURRENT (
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
Ground Current vs. V
V
(V)
IN
= 3.3V)
IN
OUT
I
= 100mA
LOAD
C
= 1µF
IN
C
= 1µF
OUT
DS21354D-page 4 © 2007 Microchip Technology Inc.
TC1072/TC1073
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 I
LOAD
= 100mA
C
IN
= 1µF
C
OUT
= 1µF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
V
OUT
(V)
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
3.274
3.276
3.278
3.280
3.282
3.284
3.286
3.288
3.290
-40 -20 -10 0 20 40 85 125
I
LOAD
= 150mA
C
IN
= 1µF
C
OUT
= 1µF
VIN = 4.3V
TEMPERATURE (°C)
V
OUT
(V)
Output Voltage vs. Temperature (V
OUT
= 3.3V)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
80
70
Ground Current vs. VIN (V
I
= 150mA
LOAD
60
50
40
30
20
GND CURRENT (µA)
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
OUT
= 3.3V)
C C
= 1µF
IN OUT
= 1µF
3.5
I
= 0
LOAD
3
2.5
2
(V)
OUT
1.5
V
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
vs.
V
(V
OUT
= 3.3V)
IN
OUT
C
= 1µF
IN
= 1µF
C
OUT
V
(V)
IN
3.320
3.315
Output Voltage vs. Temperature (V
I
= 10mA
LOAD
3.310
3.305
3.300
(V)
3.295
OUT
V
3.290
3.285
C
= 1µF
IN
C
= 1µF
3.280
OUT
VIN = 4.3V
3.275
-40 -20 -10 0 20 40 85 1 25
TEMPERATURE (°C)
OUT
= 3.3V)
© 2007 Microchip Technology Inc. DS21354D-page 5
TC1072/TC1073
0
10
20
30
40
50
60
70
-40 -20 -10 0 20 40 85 125
GND CURRENT (
µ
A)
I
LOAD
= 10mA
V
IN
= 6V
C
IN
= 1µF
C
OUT
= 1µF
TEMPERATURE (°C)
Temperature
vs. Quiescent Current
(V
OUT
= 5V)
Stable Region
S
n
K
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
(V
OUT
= 5V)
(V)
OUT
V
4.994
4.992
4.990
4.988
4.986
4.984
4.982
4.980
4.978
4.976
4.974
Output Voltage vs. Temperature
I
= 150mA
LOAD
V
= 6V
IN
C
= 1µF
IN
C
= 1µF
OUT
-40 -20 -10 0 2 0 40 85 125
(V)
OUT
V
5.025
5.020
5.015
5.010
5.005
5.000
4.995
4.990
4.985
Output Voltage vs. Temperature
I
= 10mA
LOAD
V
= 6V
IN
C
= 1µF
IN
C
= 1µF
OUT
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
TEMPERATURE (°C)
(V
= 5V)
OUT
NOISE (µV/Hz)
10.0
Output Noise vs. Frequency
1.0
0.1
0.0
0.01K
0.1K FREQUENCY (Hz)
R
LOAD
= 1µF
C
OUT
CIN = 1µF C
= 0
BYP
1K 10K 100K
= 50
1000K
Stability Region vs. Load Current
1000
100
()
10
ESR
OUT
C
1
table Regio
0.1
0.01 10
203040
0
LOAD CURRENT (mA)
Temperature vs. Quiescent Current (V
80
I
LOAD
70
60
50
40
30
20
V
IN
GND CURRENT (µA)
C
IN
10
C
OUT
0
-40 -20 -10 0 20 40 85 125
C
= 1µF
OUT
to 10µF
50 60 70 80 90 100
= 150mA
= 6V = 1
µ
= 1µF
F
TEMPERATURE (°C)
-30 I
-35 V
V
-40 V
-45 C
C
-50
-55
-60
PSRR (dB)
-65
-70
-75
-80
0.01K
OUT
Power Supply Rejection Ratio
10mA
OUT =
= 4V
IN
DC
= 100mV
IN OUT
IN OUT
AC
= 0
0.1K
=
=
3V
1µF
p-p
1K 10K
FREQUENCY (Hz)
= 5V)
100K
1000
DS21354D-page 6 © 2007 Microchip Technology Inc.
TC1072/TC1073
V
OUT
Measure Rise Time of 3.3V LDO with Bypass Capacitor
Conditions: CIN = 1µF, C
OUT
= 1µF, C
BYP
= 470pF, I
LOAD
= 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448µS
V
SHDN
Measure Fall Time of 3.3V LDO with Bypass Capacitor
Conditions: CIN = 1µF, C
OUT
= 1µF, C
BYP
= 470pF, I
LOAD
= 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100µS
V
OUT
V
SHDN
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 3.3V LDO without Bypass Capacitor
Conditions: CIN = 1µF, C
VIN = 4.3V, Temp = 25°C, Rise Time = 184µS
V
SHDN
V
OUT
Measure Fall Time of 3.3V LDO without Bypass Capacitor
Conditions: CIN = 1µF, C
VIN = 4.3V, Temp = 25°C, Fall Time = 52µS
OUT
OUT
= 1µF, C
= 1µF, C
BYP
BYP
= 0pF, I
= 0pF, I
LOAD
LOAD
= 100mA
= 100mA
V
SHDN
V
OUT
© 2007 Microchip Technology Inc. DS21354D-page 7
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