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TC1070
Technical data
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MICROCHIP TC1070, TC1071, TC1187 Technical data

TC1070/TC1071/TC1187
TC1070 TC1071 TC1187
V
OUT
GND
C1 1 µF
+
V
IN
V
IN
V
OUT
1
5
2
4
3
SHDN
Shutdown Control
(from Power Control Logic)
ADJ
R1
R2
[ ]
V
OUT
= V
REF
x +1
R1 R2
ADJ
SHDN
5
5-Pin SOT-23
TC1070 TC1071 TC1187
13
4
2
V
IN
V
OUT
GND
50mA, 100mA and 150mA Adjustable CMOS LDOs with Shutdown
Features:
• 50 µA Ground Current for Longer Battery Life
• Adjustable Output Voltage
• Very Low Dropout Voltage
• Choice of 50 mA (TC1070), 100 mA (TC1071) and 150 mA (TC1187) Output
• Over Current and Over Temperature Protection
• Space-Saving 5-Pin SOT-23 Package
• Pin Compatible with Bipolar Regulators
Applications:
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulators for SMPS
• Pagers
Typical Application
General Description:
The TC1070, TC1071 and TC1187 are adjustable LDOs designed to supersede a variety of older (bipolar) voltage regulators. Total supply current is typically 50 μA at full load (20 to 60 times lower than in bipolar regulators).
The devices’ key features include ultra low-noise operation, very low dropout voltage – typically 85 mV (TC1070); 180 mV (TC1071); and 270 mV (TC1187) at full load, and fast response to step changes in load. Supply current is reduced to 0.5 μA (maximum) when the shutdown input is low. The devices incorporate both over-temperature and over-current protection. Output voltage is programmed with a simple resistor divider from V
to ADJ to GND.
OUT
The TC1070, TC1071 and TC1187 are stable with an output capacitor of only 1 μF and have a maximum output current of 50 mA, 100 mA and 150 mA, respectively. For higher output versions, please see the TC1174 (I
= 300 mA) data sheet.
OUT
Package Type
© 2007 Microchip Technology Inc. DS21353D-page 1
TC1070/TC1071/TC1187
TC V
OUT
= (V
OUTMAX
– V
OUTMIN
) x 10
6
V
OUT
x ΔT

1.0 ELECTRICAL CHARACTERISTICS

*Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Voltage...........................(-0.3V) to (V
Power Dissipation................Internally Limited (Note 5)
Maximum Voltage on Any Pin ........V
IN
Operating Temperature Range...... -40°C < T
+ 0.3V)
IN
+0.3V to -0.3V
< 125°C
J
above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Storage Temperature..........................-65°C to +150°C
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = V
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Test Conditions
V
IN
I
OUTMAX
V
OUT
V
REF
/ΔTV
ΔV
REF
/ΔV
ΔV
OUT
ΔV
OUT/VOUT
V
IN-VOUT
Input Operating Voltage 2.7 — 6.0 V Note 6 Maximum Output Current 50
Adjustable Output Voltage Range
Reference Voltage 1.165 1.20 1.235 V
Temperature Coefficient — 40 — ppm/°C Note 1
REF
Line Regulation — 0.05 0.35 %(VR + 1V) ≤ VIN ≤ 6V
IN
Load Regulation TC1070; TC1071
Dropout Voltage
TC1071; TC1187
I
IN
I
INSD
Supply Current — 50 80 μASHDN = VIH, IL = 0 Shutdown Supply Current — 0.05 0.5 μASHDN = 0V
PSRR Power Supply Rejection Ratio — 64 — dB F I
OUTSC
ΔV T
SD
ΔT
SD
OUT
/ΔP
Output Short Circuit Current — 300 450 mA V Thermal Regulation — 0.04 — V/W Note 4
D
Thermal Shutdown Die Temperature — 160 — °C Thermal Shutdown Hysteresis — 10 — °C
eN Output Noise — 260 — nV/√Hz
SHDN Input
V
IH
SHDN Input High Threshold 45 ——%VINVIN = 2.5V to 6.5V
Note 1:
+ 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
OUT
mA TC1070
TC1071 TC1187
%IL = 0.1 mA to I
IL = 0.1 mA to I
TC1187
100 150
V
REF
— —
— — —
— — —
—5.5V
0.5
0.5
2 3
(Note 2)
mV I
= 0.1 mA
L
I
= 20 mA
L
I
= 50 mA
L
I
= 100 mA
L
I
= 150 mA (Note 3)
L
≤ 1 kHz
RE
= 0V
OUT
IL = I
OUTMAX
TC1187
— — — — —
2 65 85
180 270
— —
120 250 400
OUTMAX OUTMAX
2: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
3: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. 4: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
6: The minimum V
has to justify the conditions: VIN ≥ VR + V
IN
, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
A
DROPOUT
at VIN = 6V for T = 10 ms.
LMAX
and VIN ≥ 2.7V for IL = 0.1 mA to I
OUTMAX
.
DS21353D-page 2 © 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
TC V
OUT
= (V
OUTMAX
– V
OUTMIN
) x 10
6
V
OUT
x ΔT
ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = V
+ 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
OUT
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Test Conditions
V
IL
SHDN Input Low Threshold — — 15 %V
VIN = 2.5V to 6.5V
IN
ADJ Input
I
ADJ
Adjust Input Leakage Current — 50 — pA
Note 1:
2: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
3: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. 4: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
6: The minimum V
has to justify the conditions: VIN ≥ VR + V
IN
, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
A
DROPOUT
at VIN = 6V for T = 10 ms.
LMAX
and VIN ≥ 2.7V for IL = 0.1 mA to I
OUTMAX
.
© 2007 Microchip Technology Inc. DS21353D-page 3
TC1070/TC1071/TC1187
2.0 TYPICAL CHARACTERISTICS
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
DROPOUT VOLTAGE (V)
0.002
0.000
0.020
0.018
Dropout Voltage vs. Temperature
I
= 10mA
LOAD
C
= 1μF
IN
C
= 1μF
OUT
-40 -20 0 20 50 70 125
Dropout Voltage vs. Temperature
I
= 10mA
LOAD
0.016
0.014
0.012
0.010
0.008
0.006
0.004
DROPOUT VOLTAGE (V)
C
= 1μF
0.002
0.000
IN
= 1μF
C
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
TEMPERATURE (°C)
(V
= 3.3V)
OUT
0.100
0.090
Dropout Voltage vs. Temperature
I
= 50mA
LOAD
(V
= 3.3V)
OUT
0.080
0.070
0.060
0.050
0.040
0.030
0.020
DROPOUT VOLTAGE (V)
C
= 1μF
0.010
0.000
IN
C
= 1μF
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
(V
= 3.3V)
OUT
0.300
0.250
0.200
0.150
0.100
0.050
DROPOUT VOLTAGE (V)
0.000
Dropout Voltage vs. Temperature
I
= 150mA
LOAD
C
= 1μF
IN
= 1μF
C
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
(V
= 3.3V)
OUT
90
80
70
A)
μ
60
50
40
30
GND CURRENT (
20
10
0
Ground Current vs. V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
(V
= 3.3V)
IN
OUT
V
(V)
IN
I
LOAD
C
IN
C
OUT
= 10mA
= 1μF
= 1μF
90
80
70
A)
μ
60
50
40
30
GND CURRENT (
20
10
0
Ground Current vs. V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
(V
= 3.3V)
IN
OUT
I
= 100mA
LOAD
C
= 1μF
IN
C
= 1μF
OUT
(V)
V
IN
DS21353D-page 4 © 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
80
70
Ground Current vs. VIN (V
I
= 150mA
LOAD
60
50
40
30
20
GND CURRENT (μA)
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
(V)
V
IN
OUT
= 3.3V)
C C
IN OUT
= 1μF
= 1μF
3.5
I
= 0
LOAD
3
2.5
2
(V)
OUT
1.5
V
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
vs.
V
(V
OUT
= 3.3V)
IN
OUT
C
= 1μF
IN
C
= 1μF
OUT
V
(V)
IN
V
vs.
V
(V
3.5
3.0
I
LOAD
OUT
= 100mA
= 3.3V)
IN
OUT
2.5
2.0
(V)
OUT
1.5
V
1.0
0.5
0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
Output Voltage vs. Temperature (V
I
= 150mA
LOAD
C
= 1μF
IN
= 1μF
C
OUT
= 4.3V
V
IN
-40 -20 -10 0 20 40 85 125
(V)
V
OUT
3.290
3.288
3.286
3.284
3.282
3.280
3.278
3.276
3.274
VIN (V)
TEMPERATURE (°C)
OUT
C
IN
C
OUT
= 1μF
= 1μF
= 3.3V)
3.320
3.315
Output Voltage vs. Temperature (V
I
= 10mA
LOAD
3.310
3.305
3.300
(V)
3.295
OUT
V
3.290
3.285
C
= 1μF
IN
= 1μF
C V
OUT
= 4.3V
IN
3.280
3.275
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
OUT
= 3.3V)
© 2007 Microchip Technology Inc. DS21353D-page 5
TC1070/TC1071/TC1187
4.985
4.990
4.995
5.000
5.005
5.010
5.015
5.020
5.025
-40 -20 -10 0 20 40 85 125
I
LOAD
= 10mA
V
IN
= 6V
C
IN
= 1μF
C
OUT
= 1μF
TEMPERATURE (°C)
Output Voltage vs. Temperature
(V
OUT
= 5V)
V
OUT
(V)
0
10
20
30
40
50
60
70
-40 -20 -10 0 20 40 85 125
GND CURRENT (
μ
A)
I
LOAD
= 10mA
V
IN
= 6V
C
IN
= 1μF
C
OUT
= 1μF
TEMPERATURE (°C)
Temperature
vs. Quiescent Current
(V
OUT
= 5V)
10.0
1.0
0.1
0.0
0.01K
0.1K
1K 10K 100K
1000K
FREQUENCY (Hz)
Output Noise vs. Frequency
NOISE (μV/√Hz)
R
LOAD
= 50Ω
C
OUT
= 1μF
C
IN
= 1μF
1000
100
10
1
0.1
0.01 0
10
203040
50 60 70 80 90 100
LOAD CURRENT (mA)
Stability Region vs. Load Current
C
OUT
ESR
(Ω)
C
OUT
= 1μF
to 10μF
Stable Region
S
n
-30
-35
-40
-45
-50
-60
-55
-65
-70
-75
-80
0.01K
0.1K
1K 10K
100K
1000K
FREQUENCY (Hz)
Power Supply Rejection Ratio
PSRR (dB)
I
OUT =
10mA
V
IN
DC
= 4V
V
IN
AC
= 100mV
p-p
V
OUT
= 3V
C
IN
= 0
C
OUT
= 1μF
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
Output Voltage vs. Temperature
I
= 150mA
LOAD
V
= 6V
IN
C
= 1μF
IN
C
= 1μF
OUT
-40 -20 -10 0 20 40 85 12 5
(V)
OUT
V
4.994
4.992
4.990
4.988
4.986
4.984
4.982
4.980
4.978
4.976
4.974
TEMPERATURE (°C)
(V
= 5V)
OUT
table Regio
Temperature vs. Quiescent Current (V
80
I
= 150mA
LOAD
70
60
50
40
30
20
V
= 6V
IN
GND CURRENT (μA)
10
= 1μF
C
IN
= 1μF
C
OUT
0
-40 -20 -10 0 20 40 85 12 5
TEMPERATURE (°C)
OUT
= 5V)
DS21353D-page 6 © 2007 Microchip Technology Inc.
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