MICROCHIP TC1017 User Manual
TC1017
150 mA, Tiny CMOS LDO With Shutdown
Features
• Spa ce -sav in g 5-Pi n SC- 70 an d SOT-23 Packages
• Extremely Low Operating Current for Longer
Battery Life: 53 µA (typ.)
• Very Low Dropout Voltage
• Rated 150 mA Output Current
• Requires Only 1 µF Ceramic Output Capacitance
• High Output Voltage Accuracy: ±0.5% (typ.)
• 10 µs (typ.) Wake-Up Time from SHDN
• Power-Saving Shutdown Mode: 0.05 µA (typ.)
• Overcurrent and Overtemperature Protection
• Pin-Compatible Upgrade for Bipolar Regulators
Applications
• Cellular/GSM/PHS Phones
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Electronic Game s
• Pagers
General Description
The TC1017 is a high-accuracy (typically ±0.5%)
CMOS upgrade for bipolar low dropout regulators
(LDOs). It is offered in a SC-70 or SOT-23 package.
The SC-70 package represents a 50% footprint reduction versus the popular SOT-23 package and is of fered
in two pinouts to make board layout easier.
Developed specifically for battery-powered systems,
the TC1017’s CMOS construction consumes only
53 µA typical supply current over the entire 150 mA
operating load range. This can be as much as 60 times
less than the quiesce nt operatin g curren t consumed b y
bipolar LDOs.
The TC1017 is designed to be stable, over the entire
input voltage and output current range, with low-value
(1 µF) ceramic or tantalum capacitors. This helps to
reduce board space and save cost. Additional integrated features, such as shutdown, overcurrent and
overtemperature protection, further reduce the board
space and cost of the entire voltage-regulating
application.
Key performance parameters for the TC1017 include
low dropout voltage (285 mV typical at 150 mA output
current), low supply current while shutdown (0.05 µA
typical) and fast stable response to sudden input
voltage and load changes.
Package Types
SC-70
2
NC
V
OUT
45
GND
2
GND
NCV
45
SHDN
OUT
TC1017R
13
V
IN
V
IN
TC1017
13
SHDN
2004 Microchip Technology Inc. DS21813C-page 1
SOT-23
OUT
54
TC1017
1 23
IN
NCV
SHDNGNDV
TC1017
1.0 ELECTRICAL
PIN FUNCTION TABLE
CHARACTERISTICS
Name Function
Absolute Maximum Ratings †
Input Voltage...................................................... .. .... .. .. ....6.5V
Output V o ltage ..........................................(-0.3) to (V
Power Dissipa ti o n ............... . ......... Int e rn a l l y L imited (Note 7)
Maximum Voltage On Any Pin..................V
+ 0.3V to -0.3V
IN
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
+ 0.3)
IN
SHDN
NC No connect
GND Ground terminal
V
OUT
V
IN
Shutdown control input.
Regulated voltage output
Unregulated supply input
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V , IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C
Boldface type specifications apply for junction temperat ures of –40°C to +125°C.
Parameter Sym Min T yp Max Units Test Conditions
Input Operating Voltage V
Maximum Output Current I
Output Voltage V
Temperature Coefficient TCV
V
OUT
Line Regulation |(∆V
Load Regulation (Note 4) |∆V
Dropout Voltage (Note 5) VIN – V
Supply Current I
Shutdown Supply Current I
OUTMAX
/∆VIN)| / V
OUT
OUT|
INSD
IN
OUT
OUT
IN
/ V
OUT
R
Power Supply Rejection Ratio PSRR — 58 — dB f =1 kHz, I
Wake-Up Time
t
WK
(from Shutdown Mode)
Note 1: The minimum V
is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
2: V
R
3:
TCV
OUT
has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%) + V
IN
V
OUTMAXVOUTMIN
------------------ ------------------------------ --------------------------------- ---- -
=
–()106×
V
OUT
T∆×
2.7 — 6.0 V Note 1
150 ——mA
VR – 2.5% VR ±0. 5% VR + 2.5% V Note 2
— 40 — ppm/°C Note 3
—0.040.2 %/V (VR + 1V) < VIN < 6V
R
—0.381.5 %IL = 0.1 mA to I
—
—
—
—
2
90
180
285
—
200
350
500
mV IL = 100 µA
I
= 50 mA
L
= 100 mA
I
L
= 150 mA
I
L
—5390 µA SHDN = VIH, IL = 0
— 0.05 2 µA SHDN = 0V
—10—µsV
DROPOUT
.
IN
C
IN
f = 100 Hz
= 5V, IL = 60 mA,
= C
L
OUT
OUTMAX
= 50 mA
=1 µF,
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissip ation is applied,
excluding load or line regulation effects. S pecificati ons are for a current pulse equal to I
at VIN = 6V for t = 10 msec.
LMAX
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., T
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1 “Thermal Shutdown”, for more
details
.
8:
Output current is limited to 120 mA (typ) when V
is less than 0.5V due to a load fault or short-circuit condition.
OUT
DS21813C-page 2 2004 Microchip Technology Inc.
, TJ, θJA). Exceeding the maximum allowable power
A
TC1017
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C
Boldface type specifications apply for junction temperat ures of –40°C to +125°C.
Parameter Sym Min T yp Max Units Test Conditions
Settling Time
(from Shutdown mode)
Output Short-Circuit Current I
Thermal Regulation V
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis ∆T
Output Noise eN — 800 — nV/√Hz f = 10 kHz
Input High Threshold V
SHDN
SHDN
Input Low Threshold V
Note 1: The minimum V
2: V
is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
R
3:
TCV
OUT
has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%) + V
IN
V
OUTMAXVOUTMIN
------------------ ------------------------------ --------------------------------- ---- -
=
t
S
OUTSC
OUT/PD
T
SD
SD
IH
IL
–()106×
V
OUT
—32—µsV
— 120 — mA V
= 5V, IL = 60 mA,
IN
= 1 µF,
C
IN
C
= 1 µF, f = 100 Hz
OUT
= 0V, Average
OUT
Current (Note 8)
—0.04—V/WNotes 6, 7
— 160 — °C
—10—°C
45 ——%V
INVIN
= 2.7V to 6.0V
——15 %VINVIN = 2.7V to 6.0V
.
DROPOUT
T∆×
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissip ation is applied,
excluding load or line regulation effects. S peci fications are for a current pulse equal to I
at VIN = 6V for t = 10 msec.
LMAX
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., T
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1 “Thermal Shutdown”, for more
details
.
8:
Output current is limited to 120 mA (typ) when V
is less than 0.5V due to a load fault or short-circuit condition.
OUT
, TJ, θJA). Exceeding the maximum allowable power
A
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +5.5V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
T
Operating Temperature Range T
Storage Temperature Range T
Thermal Package Resistances3
Thermal Resistance, 5L-SOT23 θ
Thermal Resistance, 5L-SC-70 θ
-40 — +85 °C Industrial Temperature parts
A
-40 — +125 °C Extended Temperature parts
A
-40 — +125 °C
A
-65 — +150 °C
A
JA
JA
— 255 — °C/W
— 450 — °C/W
2004 Microchip Technology Inc. DS21813C-page 3
TC1017
= 2.85V
= 0-150 mA
= 6.0V
= 3.85V
= 3.3V
2.0 TYPICAL PERFORMANCE CHARACTERISTICS
Note: The graphs and tables prov id ed following this note are a statistical summary based on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
0.40
V
= 2.85V
OUT
0.35
0.30
0.25
0.20
TA = +125°C
TA = +25°C
TA = -40°C
0.15
0.10
Dropout Voltage (V)
0.05
0.00
0 25 50 75 100 125 150
Load Current (mA)
FIGURE 2-1: Dropout Voltage vs. Output Current.
-0.30
-0.35
-0.40
-0.45
Load Regulation (%)
-0.50
-0.55
-0.60
-0.65
V
IN
V
IN
V
IN
-0.70
-40 -15 10 35 60 85 110
Temperature (°C)
V
OUT
I
OUT
0.40
V
= 2.85V
OUT
0.35
I
0.30
OUT
= 150 mA
0.25
0.20
0.15
0.10
Dropout Voltage (V)
0.05
I
OUT
I
OUT
= 100 mA
= 50 mA
0.00
-40 -15 10 35 60 85 110
Temperature (°C)
FIGURE 2-4: Dropout Voltage vs. Temperature.
160
V
= 2.85V
OUT
140
120
100
80
60
40
20
Short Circuit Current (mA)
0
123456
Input Voltage (V)
FIGURE 2-2: Load Regulation vs. Temperature.
57
V
= 2.85V
OUT
56
55
TA = +125°C
54
53
TA = +25°C
52
Supply Current (µA)
51
TA = -40°C
50
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
FIGURE 2-3: Supply Current vs. Input Voltage.
FIGURE 2-5: Short-Circuit Current vs. Input Voltage.
57
56
V
= 6.0V
IN
55
54
V
= 3.85V
IN
53
52
Supply Current (µA)
51
V
IN
= 3.3V
50
-40 -15 10 35 60 85 110
Temperature (°C)
V
= 2.85V
OUT
FIGURE 2-6: Supply Current vs. Temperature.
DS21813C-page 4 2004 Microchip Technology Inc.
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
TC1017
0.40
V
= 3.30V
OUT
0.35
0.30
0.25
0.20
TA = +125°C
TA = +25°C
TA = -40°C
0.15
0.10
Dropout Voltage (V)
0.05
0.00
0 25 50 75 100 125 150
Load Current (mA)
FIGURE 2-7: Dropout Voltage vs. Output Current.
-0.30
-0.35
V
= 6.0V
-0.40
IN
-0.45
-0.50
-0.55
V
= 4.3V
Load Regulation (%)
-0.60
-0.65
V
IN
IN
= 4.0V
-0.70
-40 -15 10 35 60 85 110
Temperature (°C)
V
OUT
I
OUT
= 3.30V
= 0-150 mA
0.40
V
= 3.30V
OUT
0.35
0.30
I
OUT
= 150 mA
0.25
0.20
0.15
0.10
Dropout Voltage (V)
0.05
I
OUT
I
OUT
= 100 mA
= 50 mA
0.00
-40 -15 10 35 60 85 110
Temperature (°C)
FIGURE 2-10: Dropout Voltage vs. Temperature.
60
V
= 3.30V
OUT
59
58
57
56
55
54
Supply Current (µA)
53
52
4.04.55.05.56.0
TA = +25°C
TA = +125°C
TA = -40°C
Input Voltage (V)
FIGURE 2-8: Load Regulation vs. Temperature.
60
59
58
57
56
V
V
= 6.0V
IN
= 4.3V
IN
55
54
Supply Current (µA)
53
V
= 4.0V
IN
52
-40 -15 10 35 60 85 110
Temperature (°C)
V
= 3.30V
OUT
FIGURE 2-9: Su ppl y Cur r ent vs. Temperature.
FIGURE 2-11: Supply Current vs. Input Voltage.
2.869
V
= 2.85V
2.868
2.867
OUT
TA = -40°C
2.866
TA = +25°C
TA = +125°C
Output Voltage (V)
2.865
2.864
2.863
2.862
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
FIGURE 2-12: Output Voltage vs. Supply Voltage.
2004 Microchip Technology Inc. DS21813C-page 5
TC1017
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
2.870
2.868
V
= 2.85V
OUT
2.866
V
= 6.0V
2.864
IN
2.862
2.860
V
= 3.85V
Output Voltage (V)
2.858
2.856
IN
2.854
0 25 50 75 100 125 150
Load Current (mA)
FIGURE 2-13: Output Voltage vs. Output Current.
2.0
1.8
OUT
= 2.85V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Shutdown Current (µA)
0.2
0.0
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
TA = +125°CV
TA = +25°C
Output Voltage (V)
2.869
2.868
2.867
2.866
2.865
2.864
2.863
V
= 6.0V
IN
V
= 3.3V
IN
VIN= 3.85V
V
OUT
2.862
-40 -15 10 35 60 85 110
Temperature (°C)
FIGURE 2-16: Output Voltage vs. Temperature.
100
10
Hz)
1
Noise (µV/
0.1
0.01
10 100 1000 10000 100000 1000000
Frequency (Hz)
V
V
OUT
C
I
OUT
= 2.85V
= 3.85V
IN
= 2.85V
C
IN
OUT
= 40 mA
= 1 µF
= 1 µF
FIGURE 2-14: Shutdown Current vs. Input Voltage.
0
V
= 3.85V
INDC
V
V
INAC
OUTDC
= 100 mVp-p
= 2.85V
-10
-20
-30
-40
PSRR (dB)
-50
-60
-70
0.01 0.1 1 10 100 1000
Frequency (KHz)
I
= 100 µA
OUT
=1 µFX7RCeramic
C
OUT
FIGURE 2-15: Power Supply Rejection Ratio vs. Frequency.
FIGURE 2-17: Output Noise vs. Frequency.
0
V
= 3.85V
INDC
V
V
INAC
OUTDC
= 100 mVp-p
= 2.85V
-10
-20
-30
-40
PSRR (dB)
-50
-60
-70
0.01 0.1 1 10 100 1000
Frequency (KHz)
I
=1mA
OUT
=1µFX7RCeramic
C
OUT
FIGURE 2-18: Power Supply Rejection Ratio vs. Frequency.
DS21813C-page 6 2004 Microchip Technology Inc.
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
= 3.85V
= 10 µF
= 1 µF Ceramic
t
= 10 µF
t
= 2.85V
= 10 µF
= 3.85V
= 10 µF
= 4.7 µF Ceramic
= 0 µF
TC1017
-10
-20
0
V
V
V
INDC
INAC
OUTDC
= 3.85V
= 100 mVp-p
= 2.85V
I
=50mA
OUT
=1µFX7RCeramic
C
OUT
-30
-40
-50
PSRR (dB)
-60
-70
-80
0.01 0.1 1 10 100 1000
Frequency (KHz)
FIGURE 2-19: Power Supply Rejection Ratio vs. Frequency.
V
= 2.85V
OUT
V
IN
C
IN
C
OUT
Shutdow n Inpu
VIN = 3.85V
C
IN
C
= 1 µF Ceramic
OUT
V
= 2.85V
OUT
= 0.1 mA to 120 mA
I
OUT
FIGURE 2-22: Load Transient Response.
V
IN
C
IN
C
OUT
V
= 2.85V
OUT
= 0.1 mA to 120 mA
I
OUT
FIGURE 2-20: Wake-U p Respon se.
V
OUT
V
= 3.85V
IN
C
IN
C
= 4.7 µF Ceramic
OUT
Shutdown Inpu
FIGURE 2-21: Wake-U p Respon se.
FIGURE 2-23: Load Transient Response.
C
= 1.0 µF Ceramic
OUT
I
= 120 mA
LOAD
IN
= 2.85V
V
OUT
V
= 3.85V to 4.85V
IN
C
FIGURE 2-24: Line Transient Response.
2004 Microchip Technology Inc. DS21813C-page 7
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