MICROCHIP TC1014, TC1015, TC1185 User Manual
TC1014/TC1015/TC1185
TC1014
TC1015
TC1185
V
OUT
SHDN
GND
Bypass
470 pF
Reference
Bypass Cap
(Optional)
1µF
+
V
IN
V
IN
V
OUT
1
5
2
4
3
Shutdown Control
(from Power Control Logic)
Bypass
SHDN
5
5-Pin SOT-23
TC1014
TC1015
TC1185
13
4
2
V
IN
V
OUT
GND
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown
and Reference Bypass
Features:
General Description
• Low Supply Current (50 µA, typical)
• Low Dropout Voltage
• Choice of 50 mA (TC1014), 100 mA (TC1015)
and 150 mA (TC1185) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23 Package
• Pin-Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
Applications:
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
The TC1014/TC1015/TC1185 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
Low Dropout Regulators (LDOs) such as the LP2980.
Designed specifically for battery-operated systems, the
devices’ CMOS construction eliminates wasted ground
current, significantly extending battery life. Total supply
current is typically 50 µA at full load (20 to 60 times
lower than in bipolar regulators).
The devices’ key features include ultra low-noise
operation (plus optional Bypass input), fast response to
step changes in load, and very low dropout voltage,
typically 85 mV (TC1014), 180 mV (TC1015), and
270 mV (TC1185) at full-load. Supply current is
reduced to 0.5 µA (max) and V
the shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output current regulators, please see the
TC1107 (DS21356), TC1108 (DS21357), TC1173
(DS21362) (I
= 300 mA) data sheets.
OUT
falls to zero when
OUT
Package Type
Typical Application
© 2007 Microchip Technology Inc. DS21335E-page 1
TC1014/TC1015/TC1185
TC V
OUT
= (V
OUTMAX
– V
OUTMIN
)x 10
6
V
OUT
x ΔT
1.0 ELECTRICAL CHARACTERISTICS
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage...........................(-0.3V) to (V
+ 0.3V)
IN
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........ V
Operating Temperature Range...... -40°C < T
+0.3V to -0.3V
IN
< 125°C
J
Storage Temperature..........................-65°C to +150°C
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter Symbol Min Typ Max Units Device Test Conditions
Input Operating Voltage
Maximum Output Current
Output Voltage
V
Temperature Coefficient
OUT
Line Regulation
Load Regulation
Dropout Voltage
Supply Current (Note 8)
Shutdown Supply Current
Power Supply Rejection
Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown
Hysteresis
Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + V
2: V
is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
R
3:
V
I
OUTMAX
V
OUT
TCV
ΔV
ΔV
ΔV
V
OUT
VIN-V
I
I
INSD
PSRR
I
OUTSC
ΔV
ΔP
T
ΔT
IN
OUT
OUT
IN
OUT
IN
OUT
SD
SD
/
/
OUT
/
D
2.7 — 6.0 V—Note 1
50
100
150
VR – 2.5% VR ±0.5% VR + 2.5% V—Note 2
—
—
—0.050c.35 %—(V
—
—
—
—
—
—
—
—5080 µA — SHDN = VIH, IL = 0
— 0.05 0.5 µA — SHDN = 0V
—64—dB —F
—300450mA —V
—0.04—V/W — Notes 6, 7
—160—°C —
—10—°C —
—
—
—
20
40
0.5
0.5
2
65
85
180
270
—
—
—
—
—
2
3
—
—
120
250
400
mA TC1014
TC1015
TC1185
ppm/°C — Note 3
% TC1014; TC1015
TC1185
mV —
.
DROPOUT
—
—
TC1015; TC1185
TC1185
+ 1V) ≤ VIN ≤ 6V
R
IL = 0.1 mA to I
IL = 0.1 mA to I
(Note 4)
IL = 100 µA
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA (Note 5)
≤ 1kHz
RE
OUT
OUTMAX
OUTMAX
= 0V
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
A
at VIN = 6V for T = 10 ms.
LMAX
DS21335E-page 2 © 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TC V
OUT
= (V
OUTMAX
– V
OUTMIN
)x 10
6
V
OUT
x ΔT
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter Symbol Min Typ Max Units Device Test Conditions
Output Noise
SHDN Input High Threshold
SHDN Input Low Threshold
Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + V
2: V
is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
R
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
eN
V
V
—600—nV/√Hz —I
= I
L
OUTMAX
F = 10 kHz
470 pF from Bypass
to GND
IH
IL
45 — — %V
——15%VIN—V
LMAX
, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
A
IN
.
DROPOUT
at VIN = 6V for T = 10 ms.
—V
= 2.5V to 6.5V
IN
= 2.5V to 6.5V
IN
,
TEMPERATURE CHARACTERISTICS
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges:
Extended Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23 θ
A
A
A
JA
-40 — +125 °C
-40 — +125 °C
-65 — +150 °C
— 256 — °C/W
© 2007 Microchip Technology Inc. DS21335E-page 3
TC1014/TC1015/TC1185
0
10
20
30
40
50
60
70
80
90
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
µ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
CIN = 1µF
C
OUT
= 1µF
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 10mA
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
DROPOUT VOLTAGE (V)
0.002
0.000
Dropout Voltage vs. Temperature
V
= 3.3V
OUT
I
= 10mA
LOAD
CIN = 1µF
C
= 1µF
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
FIGURE 2-1: Dropout Voltage vs.
Temperature.
0.200
0.180
0.160
0.140
0.120
0.100
0.080
0.060
0.040
DROPOUT VOLTAGE (V)
0.020
0.000
Dropout Voltage vs. Temperature
V
= 3.3V
OUT
I
= 100mA
LOAD
CIN = 1µF
= 1µF
C
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
FIGURE 2-2: Dropout Voltage vs.
Temperature.
0.100
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
DROPOUT VOLTAGE (V)
0.010
0.000
Dropout Voltage vs. Temperature
V
= 3.3V
OUT
I
= 50mA
LOAD
CIN = 1µF
C
= 1µF
OUT
-40 -20 0 20 50 70 12 5
TEMPERATURE (°C)
FIGURE 2-4: Dropout Voltage vs.
Temperature.
0.300
0.250
0.200
0.150
0.100
DROPOUT VOLTAGE (V)
0.050
0.000
Dropout Voltage vs. Temperature
V
= 3.3V
OUT
I
= 150mA
LOAD
CIN = 1µF
C
= 1µF
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
FIGURE 2-5: Dropout Voltage vs.
Temperature.
FIGURE 2-3: Ground Current vs. Input
Voltage (V
DS21335E-page 4 © 2007 Microchip Technology Inc.
IN
).
90
80
70
A)
µ
60
50
40
30
GND CURRENT (
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
Ground Current vs. V
11.522.533.544.555.566.577.5
V
(V)
IN
IN
V
OUT
I
LOAD
= 3.3V
= 100mA
CIN = 1µF
C
= 1µF
OUT
FIGURE 2-6: Ground Current vs. Input
Voltage (VIN).
TC1014/TC1015/TC1185
0
10
20
30
40
50
60
70
80
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (µA)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
CIN = 1µF
C
OUT
= 1µF
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 150mA
Output Voltage vs. Temperature
3.274
3.276
3.278
3.280
3.282
3.284
3.286
3.288
3.290
-40 -20 -10 0 20 40 85 125
V
OUT
(V)
TEMPERATURE (°C)
V
OUT
= 3.3V
I
LOAD
= 150mA
CIN = 1µF
C
OUT
= 1µF
V
IN
= 4.3V
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
3.5
V
= 3.3V
OUT
I
= 0
3
LOAD
2.5
2
(V)
OUT
1.5
V
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
OUT
vs. VIN
V
(V)
IN
CIN = 1µF
C
= 1µF
OUT
FIGURE 2-7: Ground Current vs. Input
Voltage (V
(V)
OUT
V
FIGURE 2-8: Output Voltage (V
Input Voltage (V
).
IN
V
vs. VIN
3.5
V
= 3.3V
OUT
I
= 100mA
LOAD
I
= 100mA
3.0
2.5
2.0
1.5
1.0
0.5
0.0
LOAD
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
OUT
V
(V)
IN
).
IN
CIN = 1µF
C
= 1µF
OUT
OUT
) vs.
FIGURE 2-10: Output Voltage (V
Input Voltage (V
3.320
3.315
3.310
3.305
3.300
(V)
3.295
OUT
V
3.290
3.285
3.280
3.275
-40 -20 -10 0 20 40 85 125
).
IN
Output Voltage vs. Temperature
V
= 3.3V
OUT
I
= 10mA
LOAD
CIN = 1µF
C
= 1µF
OUT
= 4.3V
V
IN
TEMPERATURE (°C)
FIGURE 2-11: Output Voltage (V
Temperature.
OUT
OUT
) vs.
) vs.
FIGURE 2-9: Output Voltage (V
Temperature.
© 2007 Microchip Technology Inc. DS21335E-page 5
OUT
) vs.
TC1014/TC1015/TC1185
Stable Region
S
n
K
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Output Voltage vs. Temperature
V
= 5V
OUT
I
= 10mA
LOAD
CIN = 1µF
= 1µF
C
OUT
V
= 6V
IN
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
(V)
V
OUT
5.025
5.020
5.015
5.010
5.005
5.000
4.995
4.990
4.985
FIGURE 2-12: Output Voltage (V
Temperature.
Temperature vs. Quiescent Current
70
V
= 5V
OUT
60
I
= 10mA
LOAD
A)
µ
50
40
30
20
GND CURRENT (
CIN = 1µF
C
10
= 1µF
OUT
V
= 6V
IN
0
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
OUT
) vs.
4.994
V
= 5V
OUT
4.992
I
= 150mA
LOAD
4.990
4.988
4.986
(V)
4.984
OUT
4.982
V
4.980
CIN = 1µF
4.978
C
= 1µF
4.976
4.974
OUT
= 6V
V
IN
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
FIGURE 2-14: Output Voltage (V
Temperature.
Output Voltage vs. Temperature
80
70
60
A)
μ
50
40
30
20
GND CURRENT (
10
Temperature vs. Quiescent Current
V
= 5V
OUT
I
= 150mA
LOAD
CIN = 1μF
C
= 1μF
OUT
= 6V
V
IN
0
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
OUT
) vs.
FIGURE 2-13: I
vs. Temperature.
GND
Output Noise vs. Frequency
NOISE (μV/√Hz)
10.0
1.0
0.1
0.0
0.01K
0.1K
1K 10K 100K
FREQUENCY (Hz)
R
C
C
C
LOAD
OUT
= 1μF
IN
BYP
= 50Ω
= 1μF
= 0
(Ω)
ESR
C
1000K
FIGURE 2-16: AC Characteristics.
FIGURE 2-15: I
Stability Region vs. Load Current
1000
100
OUT
0.1
0.01
10
table Regio
1
10
203040
0
LOAD CURRENT (mA)
C
OUT
to 10
50 60 70 80 90 100
= 1μF
μ
F
vs. Temperature.
GND
Power Supply Rejection Ratio
-30
I
10mA
OUT =
-35
-40
-45
-50
-55
-60
PSRR (dB)
-65
-70
-75
-80
0.01K
V
IN
DC
V
IN
AC
V
OUT
= 0
C
IN
C
OUT
0.1K
= 4V
= 100mV
p-p
= 3V
= 1μF
1K 10K
FREQUENCY (Hz)
100K
1000
DS21335E-page 6 © 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
V
SHDN
V
OUT
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1μF, C
OUT
= 1μF, C
BYP
= 470pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25°C, Rise Time = 448μS
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, C
V
SHDN
V
= 4.3V, Temp = 25°C, Rise Time = 184μS
V
IN
OUT
OUT
= 1μF, C
BYP
= 0pF, I
LOAD
= 100mA
FIGURE 2-17: Measure Rise Time of 3.3V
with Bypass Capacitor.
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1μF, C
V
SHDN
V
OUT
= 4.3V, Temp = 25°C, Fall Time = 100μS
V
IN
OUT
= 1μF, C
BYP
= 470pF, I
LOAD
= 50mA
FIGURE 2-18: Measure Fall Time of 3.3V
with Bypass Capacitor.
FIGURE 2-19: Measure Rise Time of 3.3V
without Bypass Capacitor.
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, C
V
SHDN
V
OUT
= 4.3V, Temp = 25°C, Fall Time = 52μS
V
IN
OUT
= 1μF, C
BYP
= 0pF, I
LOAD
= 100mA
FIGURE 2-20: Measure Fall Time of 3.3V
without Bypass Capacitor.
© 2007 Microchip Technology Inc. DS21335E-page 7
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