TC1014/TC1015/TC1185
50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass
Features
• Extremely Low Supply Current (50µA, Typ.)
• Very Low Dropout Voltage
• Choice of 50mA (TC1014), 100mA (TC1015) and
150mA (TC1016) Output
• High Output VoltageAccuracy
• Standard or Custom Output Voltages
• Power Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Over Current and Over Temperature Protection
• Space-Saving 5-Pin SOT-23APackage
• Pin Compatible Upgrades for Bipolar Regulators
Applications
• Battery Operated Systems
• PortableComputers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHSPhones
• Linear Post-Regulator for SMPS
• Pagers
Device Selection Table
Part Number Package
TC1014-xxVCT 5-Pin SOT-23A -40°C to +125°C
TC1015-xxVCT 5-Pin SOT-23A -40°C to +125°C
TC1185-xxVCT 5-Pin SOT-23A -40°C to +125°C
NOTE: xx indicates output voltages. Available output
voltages: 1.8, 2.5, 2.6, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0.
Other output voltages are available. Please contact Microchip
T echnology Inc. for details.
Junction
Temp. Range
Package Type
5-Pin SOT-23A
V
OUT
5
Bypass
4
TC1014
TC1015
TC1185
13
2
V
GND
IN
NOTE: 5-Pin SOT-23A is equivalentto the EIAJ (SC-74A)
SHDN
2002 Microchip TechnologyInc. DS21335B-page 1
TC1014/TC1015/TC1185
General Description
The TC1014/TC1015/TC1185 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
low dropout regulators such as the LP2980. Designed
specifically f or battery-operated systems, the devices’
CMOS construction eliminates wasted ground current,
significantly extending battery life. Totalsupply current
is typically 50µA at full load (20 to 60 times lower t han
in bipolar regulators).
The devices’ key features include ultra low noise operation(plusoptionalBypass input),fastresponsetostep
changes in load, and very low dropout voltage –
typically 85mV (TC1014); 180mV (TC1015); and
270mV (TC1185)at full load. Supply current is reduced
to 0.5µA (max) and V
shutdown input is low. The devices incorporate both
over-temperature and over-currentprotection.
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1µF and have a maximum output
current of 50mA, 100mA and 150mA, respectively. For
higher output current regulators, please see the
TC1107/TC1108/TC1173 (I
falls to zero when the
OUT
= 300mA) data sheets.
OUT
Typical Application
V
IN
Shutdown Control
(from Power Control Logic)
1
V
IN
TC1014
TC1015
TC1185
2
GND
3
SHDN
V
OUT
Bypass
5
4
V
OUT
+
1µF
470pF
Reference
Bypass Cap
(Optional)
DS21335B-page 2
2002 Microchip TechnologyInc.
TC1014/TC1015/TC1185
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage...........................(-0.3V) to (V
+0.3V)
IN
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanentdamage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Power Dissipation............... Internally Limited (Note 7)
Maximum Voltage on Any Pin .........V
OperatingTemperature Range...... -40°C < T
+0.3V to -0.3V
IN
< 125°C
J
Storage Temperature. ........................ -65°C to +150°C
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN=VR+1V,IL= 100µA, CL=3.3µF, SHDN >VIH,TA= 25°C, unless otherwise noted. Boldfa ce type
specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Device Test Conditions
V
IN
I
OUTMAX
V
OUT
TCV
OUT
∆V
OUT
∆V
OUT/VOUT
V
IN-VOUT
I
IN
I
INSD
PSRR Power Supply Rejection
I
OUTSC
∆V
OUT
T
SD
∆T
SD
eN Output Noi se — 600 — nV/√Hz
Note 1: Theminimum VINhas to meet two conditions: VIN≥ 2.7VandVIN≥ VR+V
Input Operating Voltage 2.7 — 6.0 V Note 1
Maximum Outp ut Current 50
100
150
—
—
—
—
—
—
mA TC1014
TC1015
TC1185
Output Voltage VR–2.5% VR±0.5% VR+2.5% V Note 2
V
TemperatureCoefficient —
OUT
—
/∆VINLine Regul ation — 0.05 0.35 %(V
Load Regulation —
—
Dropout Voltage —
—
—
—
—
20
40
0.5
0.5
2
65
85
180
270
—
—
2
3
—
—
120
250
400
ppm/°C Note 3
+1V)≤ VIN ≤ 6V
R
% TC1014; TC1015
TC1185
IL= 0.1mA to I
IL= 0.1mA to I
(Note 4)
mV
TC1015; T C1185
TC1185
= 100µA
I
L
= 20mA
I
L
I
= 50mA
L
= 100mA
I
L
= 150mA (Note 5)
I
L
OUTMAX
OUTMAX
Supply Current (Note 8) — 50 80 µASHDN=VIH,IL=0
Shutdown Supply Current — 0.05 0.5 µASHDN=0V
Ratio
—64—dB F
Output S hort Circuit Current — 300 450 mA V
RE
OUT
≤ 1kHz
=0V
/∆PDThermal Regulation — 0.04 — V/W Notes 6, 7
Thermal Shutdown Die
— 160 — °C
Temperature
Thermal Shutdown
—10—°C
Hysteresis
IL=I
470pF f rom Bypass
OUTMAX
, F = 10kHz
to G ND
.
2: V
is the regulator output voltage setting. For example: VR= 1.8V, 2.5V, 2.6V,2.7V, 2.8V, 2.85V,3.0V, 3.3V, 3.6V,4.0V ,5.0V.
R
3:
TC V
=(V
OUT
OUTMAX–VOUTMIN
V
x ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
OUT
)x 10
6
, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
A,TJ
DROPOUT
at VIN= 6V for T = 10 msec.
LMAX
2002 Microchip TechnologyInc. DS21335B-page 3
TC1014/TC1015/TC1185
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN=VR+1V,IL=100µA, CL=3.3µF,SHDN >VIH,TA= 25°C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Test Conditions
SHDN Input
V
IH
V
IL
Note 1: TheminimumVINhas to meet two conditions: VIN≥ 2.7V and VIN≥ VR+V
SHDN Input High Threshold 45 — — %VINVIN=2.5Vto6.5V
SHDN Input Low T hre shold — — 15 %VINVIN=2.5Vto6.5V
.
2: V
is the regulator output voltage setting. For example: VR= 1.8V, 2.5V,2.6V, 2.7V, 2.8V,2.85V,3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
R
3:
TC V
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
OUT
=(V
OUTMAX–VOUTMIN
V
x ∆T
OUT
)x 10
6
, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
A,TJ
DROPOUT
at VIN= 6V for T = 10 msec.
LMAX
DS21335B-page 4
2002 Microchip TechnologyInc.
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1: P IN FUNCTION TABLE
TC1014/TC1015/TC1185
Pin No.
(5-Pin SOT-23A)
1V
2 GND Ground terminal.
3 SHDN
4 Bypass Reference bypass input. Connecting a 470pF to this input further reduces output noise.
5V
Symbol Description
IN
OUT
Unregulatedsupply input.
Shutdown control input. The regulator is fully enabled when a logic high is applied to this input.
The regulator enters shutdown when a logic low is applied to this input. During shutdown,
output voltage falls to zero, ERROR
(max).
Regulated voltage output.
is open circuited and supply current is reduced to 0.5µA
2002 Microchip TechnologyInc. DS21335B-page 5
TC1014/TC1015/TC1185
3.0 DETAILED DESCRIPTION
The TC1014/TC1015/TC1185 are precision fixed
output voltage regulators. (If an adjustable version is
desired, please see the TC1070/TC1071/TC1187 data
sheet.) Unlike bipolar regulators, the TC1014/TC1015/
TC1185 supply current does not increase with load
current. In addition, V
regulation over the entire 0mA to I
load current ranges (an importantconsiderationi n RTC
and CMOS RAM battery back-up applications).
Figure 3-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN
)isatoraboveVIH, and shutdown (disabled)
when SHDN
is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05µA
(typical), V
fallstozerovolts.
OUT
FIGURE 3-1: TYPICAL APPLICATION
V
+
+
Battery
IN
1µF
GND
remains stable and within
OUT
OUTMAX
input is not required, it
CIRCUIT
V
OUT
TC1014
TC1015
TC1185
operating
+
1µF
V
OUT
3.1 Bypass Input
A 470pF capacitor connected from the Bypass input to
ground reduces noise present on the internal
reference, which in turn significantly reduces output
noise.Ifoutputnoiseisnota concern,thisinputmaybe
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initiallyapplied.
3.2 Output Capacitor
A1µF(min)capacitorfromV
The output capacitor should have an effective series
resistance greater than 0.1Ω and less than 5Ω.A1µF
capacitorshouldbeconnectedfrom V
is more t han 10 inches of wire between the regulator
and the AC filtercapacitor, or if a battery is used as the
power source. Aluminum electrolytic or tantalum
capacitor types can be used. (Since many aluminum
electrolytic capacitors freeze at approximately -30°C,
solid tantalums are recommended for applications
operating below -25°C.) When operating from sources
other than batteries, supply-noise rejection and
transient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
to ground is required.
OUT
to GND if there
IN
SHDN
Shutdown Control
(to CMOS Logic or Tie
if unused)
to V
IN
Bypass
470pF
Reference
Bypass Cap
(Optional)
DS21335B-page 6
2002 Microchip TechnologyInc.
TC1014/TC1015/TC1185
4.0 THERMAL CONSIDERATIONS
4.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
4.2 Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
EQUATION 4-1:
≈ (V
P
D
INMAX–VOUTMIN)ILOADMAX
Where:
P
= Worst case actual power dissipation
D
= Maximum voltage on V
V
INMAX
V
I
LOADMAX
= Minimum regulator output voltage
OUTMIN
= Maximum output (load) current
The maximum allowable power dissipation (Equation
4-2) is a function of t he maximum ambient temperature
(T
), the maximum allowable die temperature
A
MAX
(T
) and t he thermal resistance f rom junction-to-air
JMAX
(θ
). The 5-Pin SOT-23A package has a θJAof
JA
approximately 220°C/Watt.
IN
Equation 4-1 can be used in conjunction with Equation
4-2 to ensure regulator thermal operation is within
limits. For example:
Given:
V
INMAX
V
OUTMIN
I
LOADMAX
T
JMAX
T
AMAX
= 3.0V +10%
=2.7V–2.5%
=40mA
= 125°C
=55°C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
P
≈ (V
D
INMAX–VOUTMIN)ILOADMAX
= [ (3.0 x 1.1) – (2.7 x .975)]40 x 10
–3
= 26.7mW
Maximum allowable power dissipation:
P
=(T
D
MAX
J
MAX
–T
θ
JA
)
A
MAX
= ( 125 – 55)
220
= 318mW
In this example, the TC1014 dissipates a maximum of
26.7mW; below the allowable limit of 318mW. In a
similar manner, Equation 4-1 and Equation 4-2 can be
used to calculate maximum current and/or input
voltage limits.
EQUATION 4-2:
P
=(T
DMAX
Where all terms are previously defined.
JMAX–TAMAX
θ
JA
4.3 Layout Considerations
)
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wi de traces at the pads, and wide power
supply bus lines combine to lower θ
and therefore
JA
increase the maximum allowable power dissipation
limit.
2002 Microchip TechnologyInc. DS21335B-page 7
TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Note: The graphs and tables provided following this note are a statisticalsummary based on a limited number of
samplesandareprovidedforinformational purposesonly.Theperformancecharacteristicslistedhereinare
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range ( e.g., outside specified power supply range) and therefore outside the warranted range.
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
DROPOUT VOLTAGE (V)
0.002
0.000
0.200
0.180
0.160
0.140
0.120
0.100
0.080
0.060
0.040
DROPOUT VOLTAGE (V)
0.020
0.000
Dropout Voltage vs. Temperature
V
= 3.3V
OUT
I
= 10mA
LOAD
CIN = 1µF
C
= 1µF
OUT
-40 -20 0 20 50 70 125
Dropout Voltage vs. Temperature
V
= 3.3V
OUT
I
= 100mA
LOAD
CIN = 1µF
C
= 1µF
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
TEMPERATURE (°C)
0.100
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
DROPOUT VOLTAGE (V)
0.010
0.000
0.300
0.250
0.200
0.150
0.100
DROPOUT VOLTAGE (V)
0.050
0.000
Dropout Voltage vs. Temperature
V
= 3.3V
OUT
I
= 50mA
LOAD
CIN = 1µF
C
= 1µF
OUT
-40 -20 0 20 50 70 125
Dropout Voltage vs. Temperature
V
= 3.3V
OUT
I
= 150mA
LOAD
CIN = 1µF
C
= 1µF
OUT
-40 -20 0 20 50 70 125
TEMPERATURE (°C)
TEMPERATURE (°C)
90
80
70
A)
µ
60
50
40
30
20
GND CURRENT (
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
DS21335B-page 8
Ground Current vs. V
V
(V)
IN
IN
V
OUT
I
LOAD
CIN = 1µF
C
OUT
= 3.3V
= 10mA
= 1µF
90
80
70
A)
µ
60
50
40
30
GND CURRENT (
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
Ground Current vs. V
11.522.533.544.555.566.577.5
V
(V)
IN
2002 Microchip TechnologyInc.
IN
V
I
OUT
LOAD
CIN = 1µF
C
OUT
= 3.3V
= 100mA
= 1µF
TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
80
Ground Current vs. V
V
= 3.3V
OUT
70
I
= 150mA
LOAD
60
50
40
30
20
GND CURRENT (µA)
10
0
3.5
3.0
2.5
2.0
(V)
OUT
1.5
V
1.0
0.5
0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
= 3.3V
OUT
= 100mA
I
LOAD
I
= 100mA
LOAD
V
OUT
V
(V)
IN
vs. VIN
V
(V)
IN
IN
CIN = 1µF
C
CIN = 1µF
C
OUT
OUT
= 1µF
= 1µF
(V)
V
(V)
OUT
V
OUT
3.5
3
2.5
2
1.5
1
0.5
0
3.320
3.315
3.310
3.305
3.300
3.295
3.290
3.285
3.280
3.275
V
vs. VIN
OUT
V
= 3.3V
OUT
I
= 0
LOAD
CIN = 1µF
C
= 1µF
OUT
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
(V)
IN
Output Voltage vs. Temperature
V
= 3.3V
OUT
I
= 10mA
LOAD
CIN = 1µF
C
= 1µF
OUT
V
= 4.3V
IN
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
3.290
V
= 3.3V
3.288
3.286
3.284
(V)
3.282
OUT
V
3.280
3.278
3.276
3.274
2002 Microchip TechnologyInc. DS21335B-page 9
OUT
I
= 150mA
LOAD
CIN = 1µF
C
= 1µF
OUT
V
= 4.3V
IN
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
Output Voltage vs. Temperature
TC1014/TC1015/TC1185
Stable Region
S
n
K
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
5.025
V
= 5V
OUT
I
= 10mA
LOAD
CIN = 1µF
C
= 1µF
OUT
V
= 6V
IN
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
(V)
V
OUT
5.020
5.015
5.010
5.005
5.000
4.995
4.990
4.985
Temperature vs. Quiescent Current
70
V
= 5V
OUT
60
I
= 10mA
LOAD
A)
µ
50
40
30
20
GND CURRENT (
CIN = 1µF
C
Output Voltage vs. Temperature
10
0
= 1µF
OUT
V
= 6V
IN
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
4.994
Output Voltage vs. Temperature
V
= 5V
OUT
4.992
I
= 150mA
LOAD
4.990
4.988
4.986
(V)
4.984
OUT
4.982
V
4.980
CIN = 1µF
4.978
C
= 1µF
4.976
4.974
80
70
60
A)
µ
50
40
30
20
GND CURRENT (
10
OUT
V
= 6V
IN
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
Temperature vs. Quiescent Current
V
= 5V
OUT
I
= 150mA
LOAD
CIN = 1µF
C
= 1µF
OUT
V
= 6V
IN
0
-40 -20 -10 0 20 40 85 125
TEMPERATURE (°C)
Output Noise vs. Frequency
10.0
1.0
NOISE (µV/√Hz)
0.1
0.0
0.01K
0.1K
1K 10K 100K
FREQUENCY (Hz)
R
C
C
C
LOAD
OUT
= 1µF
IN
BYP
= 50Ω
= 1µF
= 0
1000K
Stability Region vs. Load Current
1000
(Ω)
ESR
OUT
C
0.01
100
0.1
10
0
10
203040
table Regio
1
LOAD CURRENT (mA)
C
OUT
to 10
50 60 70 80 90 100
= 1µF
µ
F
Power Supply Rejection Ratio
-30
I
10mA
OUT =
-35
-40
-45
-50
-55
-60
PSRR (dB)
-65
-70
-75
-80
0.01K
V
IN
DC
V
IN
AC
V
OUT
= 0
C
IN
C
OUT
0.1K
= 4V
= 100mV
p-p
= 3V
= 1µF
1K 10K
FREQUENCY (Hz)
100K
1000
DS21335B-page 10
2002 Microchip TechnologyInc.
TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1µF, C
V
SHDN
V
= 4.3V, Temp = 25°C, Rise Time = 448µS
V
IN
OUT
OUT
= 1µF, C
= 470pF, I
BYP
LOAD
= 100mA
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1µF, C
V
SHDN
= 4.3V, Temp = 25°C, Fall Time = 100µS
V
IN
OUT
= 1µF, C
= 470pF, I
BYP
LOAD
= 50mA
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, C
V
= 4.3V, Temp = 25°C, Rise Time = 184µS
IN
V
SHDN
V
OUT
OUT
= 1µF, C
BYP
= 0pF, I
LOAD
= 100mA
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, C
V
SHDN
= 4.3V, Temp = 25°C, Fall Time = 52µS
V
IN
OUT
= 1µF, C
BYP
= 0pF, I
LOAD
= 100mA
V
OUT
V
OUT
2002 Microchip TechnologyInc. DS21335B-page 11
TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1µF, C
V
SHDN
V
OUT
= 6V, Temp = 25°C, Rise Time = 390µS
V
IN
OUT
= 1µF, C
BYP
= 470pF, I
LOAD
= 100mA
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1µF, C
V
SHDN
= 6V, Temp = 25°C, Fall Time = 167µS
V
IN
OUT
= 1µF, C
= 470pF, I
BYP
LOAD
= 50mA
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, C
V
SHDN
V
OUT
= 6V, Temp = 25°C, Rise Time = 192µS
V
IN
OUT
= 1µF, C
BYP
= 0pF, I
LOAD
= 100mA
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, C
V
SHDN
V
= 6V, Temp = 25°C, Fall Time = 88µS
IN
OUT
= 1µF, C
BYP
= 0pF, I
LOAD
= 100mA
V
OUT
V
OUT
DS21335B-page 12
2002 Microchip TechnologyInc.
TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Load Regulation of 3.3V LDO
Conditions: CIN = 1µF, C
I
LOAD
V
OUT
= V
V
IN
I
= 50mA switched in at 10kHz, V
LOAD
Load Regulation of 3.3V LDO
Conditions: CIN = 1µF, C
I
LOAD
VIN = V
I
= 150mA switched in at 10kHz, V
LOAD
= 2.2µF, C
OUT
+ 0.25V, Temp = 25°C
OUT
= 2.2µF, C
OUT
+ 0.25V, Temp = 25°C
OUT
is AC coupled
OUT
is AC coupled
OUT
BYP
BYP
= 470pF,
= 470pF,
Load Regulation of 3.3V LDO
Conditions: CIN = 1µF, C
V
= V
IN
I
= 100mA switched in at 10kHz, V
LOAD
I
LOAD
V
OUT
OUT
= 2.2µF, C
OUT
+ 0.25V, Temp = 25°C
OUT
Line Regulation of 3.3V LDO
Conditions: VIN = 4V, + 1V Squarewave @2.5kHz
V
IN
= 470pF,
BYP
is AC coupled
V
OUT
V
OUT
CIN = 0µF, C
I
LOAD
= 1µF, C
OUT
= 100mA, VIN & V
= 470pF,
BYP
are AC coupled
OUT
2002 Microchip TechnologyInc. DS21335B-page 13
TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Line Regulation of 5.0V LDO
Conditions: VIN = 6V, + 1V Squarewave @2.5kHz
V
IN
V
OUT
CIN = 0µF, C
I
LOAD
= 1µF, C
OUT
= 100mA, VIN & V
= 470pF,
BYP
are AC coupled
OUT
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, CIN = 0µF, C
V
OUT
I
was increased until temperature of die reached about 160°C, at
LOAD
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160
remains off until die temperature drops to approximately 150
= 1µF
OUT
°
C. The regulator
°
C.
DS21335B-page 14
2002 Microchip TechnologyInc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
“1” & “2” = part number code + temperature range and
voltage
TC1014/TC1015/TC1185
(V)
1.8 AY BY NY
2.5 A1 B1 N1
2.6 NB BT NT
2.7 A2 B2 N2
2.8 AZ BZ NZ
2.85 A8 B8 N8
3.0 A3 B3 N3
3.3 A5 B5 N5
3.6 A9 B9 N9
4.0 A0 B0 N0
5.0 A7 B7 N7
“3” represents date code
“4” represents l ot ID number
TC1014
Code
TC1015
Code
6.2 Taping Form
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
TC1185
Code
User Direction of Feed
Device
Marking
W
PIN 1
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A 8 mm 4 mm 3000 7 in
2002 Microchip TechnologyInc. DS21335B-page 15
P
TC1014/TC1015/TC1185
6.3 Package Dimensions
SOT-23A-5
.075 (1.90)
REF.
.122 (3.10)
.098 (2.50)
.020 (0.50)
.012 (0.30)
.057 (1.45)
.035 (0.90)
PIN 1
.006 (0.15)
.000 (0.00)
.122 (3.10)
.106 (2.70)
.071 (1.80)
.059 (1.50)
.037 (0.95)
REF.
10° MAX.
.010 (0.25)
.004 (0.09)
.024 (0.60)
.004 (0.10)
Dimensions: inches (mm)
DS21335B-page 16
2002 Microchip TechnologyInc.
TC1014/TC1015/TC1185
Sales and Support
Data Sheets
Products supportedby a preliminary DataSheetmayhave an erratasheetdescribingminor operationaldifferences and recommendedworkarounds.To determineif an errata sheet existsfora particular device, pleasecontact one of t he following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Pleasespecify which device, revision of silicon and Data Sheet (includeLiterature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn)to receive the most currentinformationon our products.
2002 Microchip Technology Inc. DS21335B-page17
TC1014/TC1015/TC1185
NOTES:
DS21335B-page18 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
K
EELOQ,microID,MPLAB,PIC,PICmicro,PICMASTER,
PICSTART, PRO MA TE, SEEVAL and The Embedded Control
SolutionsCompany areregiste red trademarksof MicrochipTechnologyIncorp or ated in the U.S.A. and other countries .
dsPIC, ECONOMONI TOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV,MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
TechnologyIncorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip TechnologyIncorporated in t he U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
®
PICmicro
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systemsisISO 9001certified.
2002 Microchip TechnologyInc. DS21335B-page 19
8-bit MCUs, KEELOQ®code hopping
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Rocky Mountain
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
New York
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
China - Beijing
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F , Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
China - Hong Kong SAR
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax:65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung HuaNorth Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, EnglandRG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
DS21335B-page 20
*DS21335B*
2002 Microchip Technology Inc.
Loading...