MICROCHIP MCRF200 User Manual

查询MCRF200供应商

MCRF200

125 kHz microID™ Passive RFID Device

Features

• Factory programming and memory serialization

• One-time contactless programmable (developer

• Read-only data transmission after programming

• 96 or 128 bits of One-Time Programmable (OTP)

• Typical operation frequency: 100 kHz-400 kHz

• Ultra low-power operation (5 µA @ V

• Modulation options:

• Data Encoding options:

• Die, wafer, COB, PDIP or SOIC package option s

• Factory programming options

(SQTP

kit only)

user memory (also supports 48 and 64-bit protocols)

- ASK, FSK, PSK

- NRZ Direct, Differential Biphase, Manchester

)

CC = 2V)

Biphase

Application

• Low-cost alternative for existing low-frequency RFID devices

• Access control and time attendance

• Security systems

• Animal tagging

• Product identification

• Industrial taggin g

• Inventory control

Signal

Package Type

PDIP/SOIC

VA VB

2 3

I/O

RESET

Note: Pins 3, 4, 5 and 6 are for device test purposes only.

Pins 1 and 8 are for antenna connections. DO NOT ground pin 5.

7 6

V VCC

Description

The MCRF200 is a passive Radio Frequency Identification (RFID) device for low-frequency applications (100 kHz-400 kHz). The device is powered by rectifying an incoming RF signal from the reader. The device requires an external LC resonant circuit to receive th e inco ming RF signal and to s end da ta. The device develops a sufficient DC voltage for operation when its external coil voltag e reaches approx imately 10

PP.

V This device has a total of 128 bits o f user programmable

memory and an additional 12 bits in its configuration register. The user can manually program the 128 bits of user memory by using a contactless programmer in a microID developer kit such as DV103001 or PG103001. However, in production volume the MCRF200 is programmed at the factory (Microchip SQTP – see Technical Bulletin TB023). The device is a One-Time Programmable (OTP) integrated circuit and operates as a read-only device after programming.

Reader

Data

 2003 Microchip Technology Inc. DS21219H-page 1

MCRF200

Block Diagram

Coil

Connections

Circuit

Modulation

Clock

Generator

Rectifier

VSS

Modulation

Control

Row

Decode

Counter

Data

Memory Array

Column

Decode

The configuration reg is ter i nc lud es op tio ns for communication protocol (ASK, FSK, PSK), data encoding method, data rate, and data length.These options are specified by custom er a nd fact ory pr og ramme d dur ing assembly . Becaus e of its many choices of confi guration options, the devi ce can be easily used as an alt ernative or second source for mo st of the existin g low frequenc y passive RFID devices available today.

The device has a modulation transistor between the two antenna connections (V

A and VB). The modulation

transistor damps or undamps the coil voltage when it sends data. The variation of coil voltage controlled by the modulation transistor results in a perturbation of voltage in reader antenna coil. By monitoring the changes in reader coil voltage, the data transmitted from the device can be reconstructed.

The device is available in die, wafer, Chip-on-Board (COB) modules, PDIP, or SOIC packages. Factory programming and memory serialization (SQTP) are also available upon request. See TB023 for more information on contact programming support.

The DV103001 developer’s kit includes Contactless Programmer, ASK, FSK, PSK reference readers, and reference design guide. The reference design guide includes schematics for readers and contactless programmer as well as in-depth document for antenna circuit designs.

DS21219H-page 2  2003 Microchip Technology Inc.

1.0 ELECTRICAL CHARACTERISTICS

MCRF200

Absolute Maximum Ratings

Storage temperature..............................................................................................................................- 65°C to +150°C

Ambient temperature with power applied................................................................................................-40°C to +125°C

Maximum current into coil pads..............................................................................................................................50 mA

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indica ted in the opera tional li stings of this sp ecificati on is not i mplied. Ex posure to maximum rating conditions for extended periods may affect device reliability.

(†)

TABLE 1-1: AC AND DC CHARACTERISTICS

All parameters apply across the specified operating ranges unless otherwise noted.

Parameter Sym Min Typ Max Units Conditions

Clock frequency FCLK 100 — 400 kHz Contactless programming time T Data retention 200 — — Years at 25°C Coil current (Dynamic) ICD —50 µA Operating current I Turn-on-volt a ge (Dyna mic) for

modulation Input Capacitance CIN — 2 — pF Between VA and VB

Industrial (I): T

WC — 2 — sec For all 128-bit array

DD —5 µAVCC = 2V

VAVB 10 — — VPP

VCC 2——VDC

A = -40°C to +85°C

 2003 Microchip Technology Inc. DS21219H-page 3

MCRF200

2.0 FUNCTION DESCRIPTION

The device contains three major building blocks. They are RF front-end, configuration and control logic, and memory sections. The Block Diagram is shown on page 1.

2.1 RF Front-End

The RF front-end of the device includes circuits for rectification of the carrier, V high-voltage clamping. This section also includes a clock generator and modulation circuit.

DD (operating voltage) and

2.1.2 POWER-ON RESET

This circuit generates a Power-on Reset when the tag first enters the reader field. The Reset releases when sufficient powe r has develope d on the V allow correct operation.

2.1.3 CLOCK GENERATOR

This circuit generates a clock based on the carrier frequency from the reader. This clock is used to derive all timing in the device, including the baud rate and modulation rate.

2.1.4 MODULATION CIRCUIT

2.1.1 RECTIFIER – AC CLAMP

The rectifier circuit rectifies RF voltage on the external LC antenna circuit. An y excessi ve volt age on the tuned circuit is clamped b y the intern al circuit ry to a safe l evel to prevent damage to the IC.

The device sends the encoded data to the reader by AM-modulating the coil voltage across the tuned LC circuit. A modulation transistor is placed between the two antenna coil pads (V on and off based on the m odu lat ion sig nal . As a res ul t, the amplitude of the antenna coil vo ltage varies wi th the modulation signal. See Figure 2-1 for details.

FIGURE 2-1: MODULATION SIGNAL AND MODULATED SIGNAL

MCRF200

Modulation

Signal

DD regulator to

A and VB). The transistor turns

Amplitude

Modulation Signal

Modulated RF Signal (across VA and VB)

Modulation

Transistor

DS21219H-page 4  2003 Microchip Technology Inc.

MCRF200

2.2 Configuration Register and

Control Logic

The configuration register determines the operational parameters of the device. The configuration register can not be programmed contactlessly; it is programmed during wafer probe at the Microchip factory. CB11 is always a zero; CB12 is set when successful contact or contactless programming of the data array has been completed. Once CB12 is set, device programmi ng and erasin g is disabled. Table 2-4 contains a descri ptio n of the bi t functions of the control register.

2.2.1 BAUD RATE TIMING OPTION

The chip will acces s d at a at a ba ud rate determined by bits CB2, CB3 and CB4 of the configuration register. For example, MOD32 (CB2 = 0, CB3 = 1, CB4 = 1) has 32 RF cycles per bit. This gives the data rate of 4 kHz for the RF carrier frequency of 128 kHz.

The default timing is MOD128 (F mode is used for contact and contactless programming. Once the array is successfully programmed, the lock bit CB12 is set. When the lock bit is set, programming and erasing the device becomes permanently disabled. The configu ration register has no effect on device timing until the EEPROM data array is programmed (CB12 = 1).

2.2.2 DATA ENCODING OPTION

This logic acts upon the s erial dat a bein g read from th e EEPROM. The logic encodes the dat a acc ording to th e configuration bits CB6 and CB7. CB6 and CB7 determine the data encoding method. The available choices are:

• Non-return to zero-level (NRZ_L)

• Biphase Differential, Biphase Manchester

• Inverted Manchester

CLK/128), and this

2.2.3 MODULATION OPTION

CB8 and CB9 determine the mo dulation pro tocol of the encoded data. The available choices are:

• ASK

•FSK

• PSK_1

• PSK_2 When ASK (direct) option is chosen, the encoded data

is fed into the modulation transistor without change. When FSK option is chosen, the encoded data is

represented by: a) Sets of 10 RF carrier cycles (first 5 cycles →

higher amplitude, the last 5 cycles → lower amplitude) for logic “high” level.

b) Sets of 8 RF carrier cycles (first 4 cycles →

higher amplitude, the last 4 cycles → lower

amplitude) for logic “low” level. For example, FSK signal for MOD40 is represented: a) 4 sets of 10 RF carrier cycles for data ‘1’.

b) 5 sets of 8 RF carrier cycles for data ‘0’. Refer to Figure 2-2 for the FSK signal with MOD40

option. The PSK_1 represents change in the phase of the

modulation signal at the change of the encoded data. For example, the phase changes when the encoded data is changed from ‘1’ to ‘0’, or from ‘0’ to ‘1’.

The PSK_2 represents change in the phase at the change on ‘1’. For example, the phase changes when the encoded data is changed from ‘0’ to ‘1’, or from ‘1’ to ‘1’.

FIGURE 2-2: ENCODED DATA AND FSK OUTPUT SIGNAL FOR MOD40 OPTION

Encoded Data ‘1’

5 cycles (HI)

5 cycles (LO)

40 RF cycles

 2003 Microchip Technology Inc. DS21219H-page 5

4 cycles (HI)

Encoded Data ‘0’

4 cycles (LO)

40 RF cycles

MCRF200

FIGURE 2-3: PSK DATA MODULATION

‘1’

‘0’ ‘0’ ‘1’‘1’

2.2.4 MEMORY ARRAY LOCK BIT (CB12)

The CB12 must be ‘0’ for contactless programming (Blank). The bit (CB12) is automatically set to ‘1’ as soon as the device is programmed contactlessly.

2.3 Memory Section

The device has 128 bits of one-time programmable (OTP) memory. The user can choose 96 or 128 bits by selecting the CB1 bit in the configuration register. See Table 2-4 for more details.

2.3.1 COLUMN AND ROW DECODER LOGIC AND BIT COUNTER

The column and row decoders address the EEPROM array at the clock rate and generate a serial data stream for modulation. This data stream can be up to 128 bits in length. The size of the data stream is user programmable with CB1 and can be set to 96 or 128 bits. Data lengths of 48 and 64 bits are available by programming the data twice in the array, end-to-end.

The column and row de coders rou te the prope r volt age to the array for programming and reading. In the programming modes, each individual bit is addressed serially from bit 1 to bit 128.

2.4 Examples of Configuration

Settings

EXAMPLE 2-1: “08D” CONFIGURATION

The “08D” (hex) configuration is interpreted a follows:

CB12

CB1

Encoded Data (NRZ_L)

PSK_ 1

Change on Data

PSK _2 Change on ‘1’

EXAMPLE 2-2: “ 00A” CONFIGURATION

The “00A” (hex) configuration is interpreted as follows:

“00A” → 0000-0000-1010

The MSB corresponds to CB12 and the LSB corresponds to CB1 of the configuration register Therefore, we have:

CB12=0 CB11=0 CB10=0 CB9=0

CB8=0 CB7=0 CB6=0 CB5=0 CB4=1 CB3=0 CB2=1 CB1=0

Referring to Table 2-4, the “00A” configuration represents:

Not programmed device (blank), anticollision disabled, FSK protocol, NRZ_L (direct) encod ing, MOD50 (baud rate = rf/50), 96 bits.

CB12

CB1

EXAMPLE 2-3: MCRF200

CONFIGURATION FOR FDX-B ISO ANIMAL STANDARD PROTOCOL (ASP)

The FDX-B ISO Specification is:

Modulation = ASK Data encoding = Differential biphase Baud rate = rf/32 = 4 Kbits/sec for 128 kHz Memory size = 128 bits

Referring to Table 2-4, the equivalent MCRF200 configuration is: “14D”.

“08D” → 0000-1000-1101

Referring to Table 2-4, the “08D” configuration represents:

Modulation = PSK_1 PSK rate = rf/2 Data encoding = NRZ_L (direct) Baud rate = rf/32 = MOD32 Memory size 128 bits

DS21219H-page 6  2003 Microchip Technology Inc.

TABLE 2-4: CONFIGURATION REGISTER

CB12 CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1

MCRF200

MEMORY SIZE

CB1 = 1 128-bit user memo ry array CB1 = 0 96-bit user memory array

BAUD RATE

CB2 CB3 CB4 Rate

000MOD128 001MOD100 010MOD80 011MOD32 100MOD64 101MOD50 110MOD40 111MOD16

SYNC WORD

CB5 = 0 (Always)

DATA ENCODING

CB6 = 0; CB7 = 0 NRZ_L (Direct) CB6 = 0; CB7 = 1 Biphase_S (Differential) CB6 = 1; CB7 = 0 Biphase_L (Manchester) CB6 = 1; CB7 = 1 (Inverted Manchester)

MODULAT ION OPTIONS

CB8 = 0; CB9 = 0 FSK 0 = Fc/8, 1 = Fc/10 CB8 = 0; CB9 = 1 Direct (ASK) CB8 = 1; CB9 = 0 PSK_1

(phase change on change of data)

CB8 = 1; CB9 = 1 PSK_2

(phase change at beginning of a one)

PSK RATE OPTION

CB10 = 1 Carrier/4 CB10 = 0 Carrier/2

(ANTICOLLISION OPTION (Read-onl y)

CB11 = 0 Disabled (Always)

MEMORY ARRAY LOCK BIT (Read-only)

CB12 = 0 User memory array not locked (Blank) CB12 = 1 User memory array is locked

(Programmed)

 2003 Microchip Technology Inc. DS21219H-page 7

MCRF200

3.0 MODES OF OPERATION

The device has two ba sic modes of opera tion: Native mode and Read mode.

3.1 Native Mode

Every unprogrammed blank devi ce (CB12 =0) operates in Native mode, regardless of configuration register settings:

CLK/128, FSK, NRZ_L (direct)

Once the user memory is programmed, the lock bit is set (CB12=1) which causes the MCRF200 to switch from Native mode to the Communic ation mode defined by the confi guration register.

Refer to Figure 4-1 for contactless programming sequence. Also see the microID System Design Guide (DS51115) for more informa tio n.

FIGURE 3-1: TYPICAL APPLICATION CIRCUIT

From Reader

125 kHz

™

125 kHz RFID

RF Signal

3.2 Read Mode

After the device is programmed (CB12=1), the device is operated in the Read-only mode. The device transmits its data according to the protocol in the configuration registe r.

2.5 mH

648 pF

Input capacitance: 2 pF

Pad VA

Pad VB

To Reader amplifier/filter

Data

res

------------------- 125 k H z== 2π LC

MCRF200

DS21219H-page 8  2003 Microchip Technology Inc.

+ 16 hidden pages