MICROCHIP MCRF200 User Manual

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MCRF200

125 kHz microID™ Passive RFID Device

Features

• Factory programming and memory serialization

• One-time contactless programmable (developer

• Read-only data transmission after programming

• 96 or 128 bits of One-Time Programmable (OTP)

• Typical operation frequency: 100 kHz-400 kHz

• Ultra low-power operation (5 µA @ V

• Modulation options:

• Data Encoding options:

• Die, wafer, COB, PDIP or SOIC package option s

• Factory programming options

SM

(SQTP

kit only)

user memory (also supports 48 and 64-bit
protocols)

- ASK, FSK, PSK

- NRZ Direct, Differential Biphase, Manchester

)

CC = 2V)

Biphase

Application

• Low-cost alternative for existing low-frequency
RFID devices

• Access control and time attendance

• Security systems

• Animal tagging

• Product identification

• Industrial taggin g

• Inventory control

RF

Signal

Package Type

PDIP/SOIC

VA VB

1

NC

2
3

I/O

RESET

Note: Pins 3, 4, 5 and 6 are for device test purposes only.

Pins 1 and 8 are for antenna connections.
DO NOT ground pin 5.

4

8

NC

7
6

SS

V
VCC

5

Description

The MCRF200 is a passive Radio Frequency Identifi­cation (RFID) device for low-frequency applications
(100 kHz-400 kHz). The device is powered by
rectifying an incoming RF signal from the reader. The
device requires an external LC resonant circuit to
receive th e inco ming RF signal and to s end da ta. The
device develops a sufficient DC voltage for operation
when its external coil voltag e reaches approx imately 10

PP.

V
This device has a total of 128 bits o f user programmable

memory and an additional 12 bits in its configuration
register. The user can manually program the 128 bits of
user memory by using a contactless programmer in a
microID developer kit such as DV103001 or PG103001.
However, in production volume the MCRF200 is
programmed at the factory (Microchip SQTP – see
Technical Bulletin TB023). The device is a One-Time
Programmable (OTP) integrated circuit and operates as
a read-only device after programming.

Reader

Data

 2003 Microchip Technology Inc. DS21219H-page 1

MCRF200

MCRF200

Block Diagram

Coil

Connections

Circuit

Modulation

Clock

Generator

Rectifier

V

VSS

CC

Modulation

Control

Row

Decode

Counter

Data

Memory
Array

Column

Decode

The configuration reg is ter i nc lud es op tio ns for commu­nication protocol (ASK, FSK, PSK), data encoding
method, data rate, and data length.These options are
specified by custom er a nd fact ory pr og ramme d dur ing
assembly . Becaus e of its many choices of confi guration
options, the devi ce can be easily used as an alt ernative
or second source for mo st of the existin g low frequenc y
passive RFID devices available today.

The device has a modulation transistor between the
two antenna connections (V

A and VB). The modulation

transistor damps or undamps the coil voltage when it
sends data. The variation of coil voltage controlled by
the modulation transistor results in a perturbation of
voltage in reader antenna coil. By monitoring the
changes in reader coil voltage, the data transmitted
from the device can be reconstructed.

The device is available in die, wafer, Chip-on-Board
(COB) modules, PDIP, or SOIC packages. Factory
programming and memory serialization (SQTP) are
also available upon request. See TB023 for more
information on contact programming support.

The DV103001 developer’s kit includes Contactless
Programmer, ASK, FSK, PSK reference readers, and
reference design guide. The reference design guide
includes schematics for readers and contactless
programmer as well as in-depth document for antenna
circuit designs.

DS21219H-page 2  2003 Microchip Technology Inc.

1.0 ELECTRICAL CHARACTERISTICS

MCRF200

Absolute Maximum Ratings

Storage temperature..............................................................................................................................- 65°C to +150°C

Ambient temperature with power applied................................................................................................-40°C to +125°C

Maximum current into coil pads..............................................................................................................................50 mA

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at those or any other conditions
above those indica ted in the opera tional li stings of this sp ecificati on is not i mplied. Ex posure to maximum rating
conditions for extended periods may affect device reliability.

(†)

TABLE 1-1: AC AND DC CHARACTERISTICS

All parameters apply across the
specified operating ranges unless
otherwise noted.

Parameter Sym Min Typ Max Units Conditions

Clock frequency FCLK 100 — 400 kHz
Contactless programming time T
Data retention 200 — — Years at 25°C
Coil current (Dynamic) ICD —50 µA
Operating current I
Turn-on-volt a ge (Dyna mic) for

modulation
Input Capacitance CIN — 2 — pF Between VA and VB

Industrial (I): T

WC — 2 — sec For all 128-bit array

DD —5 µAVCC = 2V

VAVB 10 — — VPP

VCC 2——VDC

A = -40°C to +85°C

 2003 Microchip Technology Inc. DS21219H-page 3

MCRF200

2.0 FUNCTION DESCRIPTION

The device contains three major building blocks. They
are RF front-end, configuration and control logic, and
memory sections. The Block Diagram is shown on
page 1.

2.1 RF Front-End

The RF front-end of the device includes circuits for
rectification of the carrier, V
high-voltage clamping. This section also includes a
clock generator and modulation circuit.

DD (operating voltage) and

2.1.2 POWER-ON RESET

This circuit generates a Power-on Reset when the tag
first enters the reader field. The Reset releases when
sufficient powe r has develope d on the V
allow correct operation.

2.1.3 CLOCK GENERATOR

This circuit generates a clock based on the carrier
frequency from the reader. This clock is used to derive
all timing in the device, including the baud rate and
modulation rate.

2.1.4 MODULATION CIRCUIT

2.1.1 RECTIFIER – AC CLAMP

The rectifier circuit rectifies RF voltage on the external
LC antenna circuit. An y excessi ve volt age on the tuned
circuit is clamped b y the intern al circuit ry to a safe l evel
to prevent damage to the IC.

The device sends the encoded data to the reader by
AM-modulating the coil voltage across the tuned LC
circuit. A modulation transistor is placed between the
two antenna coil pads (V
on and off based on the m odu lat ion sig nal . As a res ul t,
the amplitude of the antenna coil vo ltage varies wi th the
modulation signal. See Figure 2-1 for details.

FIGURE 2-1: MODULATION SIGNAL AND MODULATED SIGNAL

MCRF200

VA

Modulation

Signal

DD regulator to

A and VB). The transistor turns

Amplitude

Modulation Signal

Modulated RF Signal
(across VA and VB)

LC

Modulation

Transistor

VB

t

DS21219H-page 4  2003 Microchip Technology Inc.

MCRF200

2.2 Configuration Register and

Control Logic

The configuration register determines the operational
parameters of the device. The configuration register
can not be programmed contactlessly; it is
programmed during wafer probe at the Microchip
factory. CB11 is always a zero; CB12 is set when
successful contact or contactless programming of the
data array has been completed. Once CB12 is set,
device programmi ng and erasin g is disabled. Table 2-4
contains a descri ptio n of the bi t functions of the control
register.

2.2.1 BAUD RATE TIMING OPTION

The chip will acces s d at a at a ba ud rate determined by
bits CB2, CB3 and CB4 of the configuration register.
For example, MOD32 (CB2 = 0, CB3 = 1, CB4 = 1) has
32 RF cycles per bit. This gives the data rate of 4 kHz
for the RF carrier frequency of 128 kHz.

The default timing is MOD128 (F
mode is used for contact and contactless program­ming. Once the array is successfully programmed, the
lock bit CB12 is set. When the lock bit is set, program­ming and erasing the device becomes permanently
disabled. The configu ration register has no effect on
device timing until the EEPROM data array is
programmed (CB12 = 1).

2.2.2 DATA ENCODING OPTION

This logic acts upon the s erial dat a bein g read from th e
EEPROM. The logic encodes the dat a acc ording to th e
configuration bits CB6 and CB7. CB6 and CB7
determine the data encoding method. The available
choices are:

• Non-return to zero-level (NRZ_L)

• Biphase Differential, Biphase Manchester

• Inverted Manchester

CLK/128), and this

2.2.3 MODULATION OPTION

CB8 and CB9 determine the mo dulation pro tocol of the
encoded data. The available choices are:

• ASK

•FSK

• PSK_1

• PSK_2
When ASK (direct) option is chosen, the encoded data

is fed into the modulation transistor without change.
When FSK option is chosen, the encoded data is

represented by:
a) Sets of 10 RF carrier cycles (first 5 cycles →

higher amplitude, the last 5 cycles → lower
amplitude) for logic “high” level.

b) Sets of 8 RF carrier cycles (first 4 cycles →

higher amplitude, the last 4 cycles → lower

amplitude) for logic “low” level.
For example, FSK signal for MOD40 is represented:
a) 4 sets of 10 RF carrier cycles for data ‘1’.

b) 5 sets of 8 RF carrier cycles for data ‘0’.
Refer to Figure 2-2 for the FSK signal with MOD40

option.
The PSK_1 represents change in the phase of the

modulation signal at the change of the encoded data.
For example, the phase changes when the encoded
data is changed from ‘1’ to ‘0’, or from ‘0’ to ‘1’.

The PSK_2 represents change in the phase at the
change on ‘1’. For example, the phase changes when
the encoded data is changed from ‘0’ to ‘1’, or from ‘1’
to ‘1’.

FIGURE 2-2: ENCODED DATA AND FSK OUTPUT SIGNAL FOR MOD40 OPTION

Encoded Data ‘1’

5 cycles (HI)

5 cycles (LO)

40 RF cycles

 2003 Microchip Technology Inc. DS21219H-page 5

4 cycles (HI)

Encoded Data ‘0’

4 cycles (LO)

40 RF cycles

MCRF200

s

.

:

-

FIGURE 2-3: PSK DATA MODULATION

‘1’

PP

P

P

‘0’ ‘0’ ‘1’‘1’

PP

PP

2.2.4 MEMORY ARRAY LOCK BIT (CB12)

The CB12 must be ‘0’ for contactless programming
(Blank). The bit (CB12) is automatically set to ‘1’ as
soon as the device is programmed contactlessly.

2.3 Memory Section

The device has 128 bits of one-time programmable
(OTP) memory. The user can choose 96 or 128 bits by
selecting the CB1 bit in the configuration register. See
Table 2-4 for more details.

2.3.1 COLUMN AND ROW DECODER
LOGIC AND BIT COUNTER

The column and row decoders address the EEPROM
array at the clock rate and generate a serial data
stream for modulation. This data stream can be up to
128 bits in length. The size of the data stream is user
programmable with CB1 and can be set to 96 or 128
bits. Data lengths of 48 and 64 bits are available by
programming the data twice in the array, end-to-end.

The column and row de coders rou te the prope r volt age
to the array for programming and reading. In the
programming modes, each individual bit is addressed
serially from bit 1 to bit 128.

2.4 Examples of Configuration

Settings

EXAMPLE 2-1: “08D” CONFIGURATION

The “08D” (hex) configuration is interpreted a
follows:

CB12

CB1

Encoded Data
(NRZ_L)

PSK_ 1

PP

PP

Change on Data

PSK _2
Change on ‘1’

EXAMPLE 2-2: “ 00A” CONFIGURATION

The “00A” (hex) configuration is interpreted as
follows:

“00A” → 0000-0000-1010

The MSB corresponds to CB12 and the LSB
corresponds to CB1 of the configuration register
Therefore, we have:

CB12=0 CB11=0 CB10=0 CB9=0

CB8=0 CB7=0 CB6=0 CB5=0
CB4=1 CB3=0 CB2=1 CB1=0

Referring to Table 2-4, the “00A” configuration
represents:

Not programmed device (blank), anticollision
disabled, FSK protocol, NRZ_L (direct) encod
ing, MOD50 (baud rate = rf/50), 96 bits.

CB12

CB1

EXAMPLE 2-3: MCRF200

CONFIGURATION FOR
FDX-B ISO ANIMAL
STANDARD PROTOCOL
(ASP)

The FDX-B ISO Specification is:

Modulation = ASK
Data encoding = Differential biphase
Baud rate = rf/32 = 4 Kbits/sec for 128 kHz
Memory size = 128 bits

Referring to Table 2-4, the equivalent MCRF200
configuration is: “14D”.

“08D” → 0000-1000-1101

Referring to Table 2-4, the “08D” configuration
represents:

Modulation = PSK_1
PSK rate = rf/2
Data encoding = NRZ_L (direct)
Baud rate = rf/32 = MOD32
Memory size 128 bits

DS21219H-page 6  2003 Microchip Technology Inc.

TABLE 2-4: CONFIGURATION REGISTER

CB12 CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1

MCRF200

MEMORY SIZE

CB1 = 1 128-bit user memo ry array
CB1 = 0 96-bit user memory array

BAUD RATE

CB2 CB3 CB4 Rate

000MOD128
001MOD100
010MOD80
011MOD32
100MOD64
101MOD50
110MOD40
111MOD16

SYNC WORD

CB5 = 0 (Always)

DATA ENCODING

CB6 = 0; CB7 = 0 NRZ_L (Direct)
CB6 = 0; CB7 = 1 Biphase_S (Differential)
CB6 = 1; CB7 = 0 Biphase_L (Manchester)
CB6 = 1; CB7 = 1 (Inverted Manchester)

MODULAT ION OPTIONS

CB8 = 0; CB9 = 0 FSK 0 = Fc/8, 1 = Fc/10
CB8 = 0; CB9 = 1 Direct (ASK)
CB8 = 1; CB9 = 0 PSK_1

(phase change on change of data)

CB8 = 1; CB9 = 1 PSK_2

(phase change at beginning of a one)

PSK RATE OPTION

CB10 = 1 Carrier/4
CB10 = 0 Carrier/2

(ANTICOLLISION OPTION (Read-onl y)

CB11 = 0 Disabled (Always)

MEMORY ARRAY LOCK BIT (Read-only)

CB12 = 0 User memory array not locked (Blank)
CB12 = 1 User memory array is locked

(Programmed)

 2003 Microchip Technology Inc. DS21219H-page 7

MCRF200

3.0 MODES OF OPERATION

The device has two ba sic modes of opera tion: Native
mode and Read mode.

3.1 Native Mode

Every unprogrammed blank devi ce (CB12 =0) operates
in Native mode, regardless of configuration register
settings:

CLK/128, FSK, NRZ_L (direct)

F

Once the user memory is programmed, the lock bit is
set (CB12=1) which causes the MCRF200 to switch
from Native mode to the Communic ation mode defined
by the confi guration register.

Refer to Figure 4-1 for contactless programming
sequence. Also see the microID
System Design Guide (DS51115) for more informa tio n.

FIGURE 3-1: TYPICAL APPLICATION CIRCUIT

I

From
Reader

AC

125 kHz

™

125 kHz RFID

L

RF Signal

3.2 Read Mode

After the device is programmed (CB12=1), the device
is operated in the Read-only mode. The device
transmits its data according to the protocol in the
configuration registe r.

2.5 mH

LC

648 pF

Input capacitance: 2 pF

Pad VA

Pad VB

To Reader
amplifier/filter

Data

C

f

res

1

------------------- 125 k H z==
2π LC

MCRF200

DS21219H-page 8  2003 Microchip Technology Inc.