MICROCHIP MCP73861, MCP73862, MCP73863, MCP73864 Technical data
MCP73861/2/3/4
Advanced Single or Dual Cell, Fully Integrated Li-Ion /
Li-Polymer Charge Management Controllers
Features
• Linear Charge Management Controllers
- Integrated Pass Transistor
- Integrated Current Sense
- Reverse-Blocking Protection
• High-Accuracy Preset V olt age Regulat ion: +
0.5%
• Four Selectable Voltage Regulation Options:
- 4.1V, 4.2V – MCP73861/3
- 8.2V, 8.4V – MCP73862/4
• Programmable Charge Current: 1.2A Maximum
• Programmable Safety Charge Timers
• Preconditioning of Deeply Depleted Cells
• Automatic End-of-Charge Control
• Optional Continuous Cell Temperature Monitoring
• Charge Status Output for Direct LED Drive
• Fault Output for Direct LED Drive
• Automatic Power-Down
• Thermal Regulation
• Temperature Range: -40°C to +85°C
• Packaging: 16-Pin, 4 x 4 QFN
16-Pin SOIC
Applications
• Lithium-Ion/Lithium-Polymer Battery Chargers
• Personal Data A ssistants (PDAs)
• Cellular Telep hon es
• Hand-Held Instruments
• Cradle Chargers
•Digital Cameras
• MP3 Players
Package Types
Description
The MCP7386X family of devices are h ighly ad vanced
linear charge management controllers for use in spacelimited, cost-sensiti ve applications. The devices combine high-accuracy, constant voltage and current r egulation, cell preconditioning, cell temperature monitoring,
advanced safety timers , automatic charge t ermination,
internal current sensing, reverse-blocking protection,
charge status and fault indication in either a spacesaving 16-pin, 4 x 4 QFN or 16-pin SOIC package. The
MCP7386X provides a complete, fully-functional, standalone charge management solution with a minimum
number of external components.
The MCP73861/3 is intended for applications utilizing
single-cell Lithium-Ion or Lithium-Polymer battery
packs, while the MCP73862/4 is intended for dual
series cell Lithium-Ion or Lithium-Polymer battery
packs. The MCP73861/3 have two selectable voltageregulation options available (4.1V and 4.2V), for use
with either coke or graphite anode s and operate wi th an
input voltage range of 4.5V to 12V. The MCP73862/4
have two selectable voltage-regulation options available (8.2V and 8.4V), for use with coke or graphite
anodes, and operate with an input voltage range of
8.7V to 12V.
The only difference between the MCP73861/2 and
MCP73863/4, respectivel y , is the function of the charge
status output (STAT1) when a charge cycle has been
completed. The MCP73861/2 flash the output, while
the MCP73863/4 turn the output off. Refer to
Section 5.2.1 “Charge Status Outputs
(STAT1,STAT2)”.
The MCP7386X family of devices are fully specified
over the ambient temperature range of -40°C to +85°C.
16-Pin SOIC16-Pin QFN
SS2
V
STAT1
V
1
SET
V
2
DD1
V
3
DD2
V
4
SS1
5678
PROG
© 2005 Microchip Technology Inc. DS21893C-page 1
EN
STAT2
141516
MCP73861
MCP73862
MCP73863
MCP73864
THREF
THERM
13
12
V
BAT3
11
V
BAT2
10
V
BAT1
V
9
SS3
TIMER
STAT2 1
STAT1
2
V
3
SET
V
4
DD1
V
5
DD2
V
SS1
PROG
THREF
MCP73861
MCP73862
6
7
89
MCP73863
16
15
14
13
12
MCP73864
11
10
EN
V
SS2
V
BAT3
V
BAT2
V
BAT1
V
SS3
TIMER
THERM
MCP73861/2/3/4
Typical Application
1.2A Lithium-Ion Battery Charger
5V
4.7µF
Functional Block Diagram
Direction
G = 0.001
Charge
Ter mination
Comparator
+
–
+
–
V
UVLO
Control
1kΩ
11 kΩ
10 kΩ
I
/12
REG
U
VLO
COMPARATOR
V
90
kΩ
Power-On
Delay
V
DD1
V
DD2
PROG
EN
110 kΩ
10 kΩ
V
REF
2, 3
V
1
V
14
EN
16
STAT1
15
STAT2
5
PROG
MCP73861/3
REF
Charge Current
Control Amplifier
+
–
Precondition
Control
DD
SET
V
BAT3
V
BAT
THREF
THERM
TIMER
V
SS
V
12
10, 11
6
7
8
4, 9, 13
DD
6.19 kΩ
7.32 kΩ
Voltage Control
Amplifier
Charge_OK
Precon
4.7 µF
0.1
µF
+
–
V
REF
Precondition
Comp.
Constant-Voltage/
Recharge Comp.
Single
+
Lithium-Ion
–
Cell
+
–
+
–
V
REF
4kΩ
600 kΩ
(1.65 MΩ)
148.42 kΩ
1.58 kΩ
300.04 kΩ
V
BAT1
V
BAT2
V
BAT3
Values in ( )
reflect the
MCP73862/4
devices
V
Bias and
Reference
Generator
V
UVLO
REF
(1.2V)
V
SET
10.3 kΩ
THREF
THERM
TIMER
100 kΩ
50 kΩ
50 kΩ
Temperature
Comparators
+
–
+
–
I
REG
Oscillator
/12
Charge Control,
Charge Timers
And Status Logic
(8.58 kΩ)
Drv Stat 1
Drv Stat 2
Charge_OK
V
SS1
V
SS2
V
SS3
STAT1
STAT2
DS21893C-page 2 © 2005 Microchip Technology Inc.
MCP73861/2/3/4
1.0 ELECTRICAL CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings†
operational listings of this specification is not implied.
Exposure to maximum rating condit ions fo r ext ended pe riods
V
..............................................................................13.5V
DDN
, V
V
BATN
, EN, ST AT1, STAT2 w.r.t. V
SET
SS
.................................................................-0.3 to (V
PROG, THREF, THERM, TIMER w.r.t. V
Maximum Junction Te m perature, T
..............-0.3 to 6V
SS
............Internally Limited
J
DD
+ 0.3)V
may affect device reliability.
Storage temperature.....................................-65°C to +150°C
ESD protection on all pins:
Human Body Model (1.5 kΩ in series with 100 pF)....≥ 4kV
Machine Model (200 pF, No series resistance) ...........300V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [V
= -40°C to +85°C. Typical values are at +25°C, V
T
A
DD
= [V
REG
(typ.) + 1.0V]
Parameters Sym Min Typ Max
Supply Input
Supply Voltage V
DD
4.5 — 12 V MCP73861/3
8.7 — 12 V MCP73862/4
Supply Current I
SS
— 0.17 4 µA Disabled
— 0.53 4 mA Operating
UVLO Start Threshold V
START
4.25 4.5 4.65 V MCP73861/3
8.45 8.8 9.05 V MCP73862/4
UVLO Stop Threshold V
STOP
4.20 4.4 4.55 V MCP73861/3
8.40 8.7 8.95 V MCP73862/4
Voltage Regulation (Constant-Voltage Mode)
Regulated Output Voltage V
REG
4.079 4.1 4.121 V MCP73861/3, V
4.179 4.2 4.221 V MCP73861/3, V
8.159 8.2 8.241 V MCP73862/4, V
8.358 8.4 8.442 V MCP73862/4, V
Line Regulation |(ΔV
Load Regulation |ΔV
BAT/VBAT
| /ΔV
DD
BAT/VBAT
)
| — 0.01 0.25 % I
— 0.025 0.25 %/V V
Supply Ripple Attenuation PSRR — 60 — dB I
—42—dBI
—28—dBI
Output Reverse-Leakage
Current
I
DISCHARGE
—0.23 1µAV
Current Regulation (Fast Charge Constant- Current Mode)
Fast Charge Current
Regulation
I
REG
85 100 115 mA PROG = OPEN
1020 1200 1380 mA PROG = V
425 500 575 mA PROG = 1.6 kΩ
(typ.) + 0.3V] to 12V,
REG
Unit
s
Conditions
Low-to-High
V
DD
High-to-Low
V
DD
SET
SET
SET
SET
V
= [V
DD
I
OUT
T
= -5°C to +55°C
A
DD
I
OUT
OUT
V
DD
OUT
OUT
10 kHz
OUT
DD
= -5°C to +55°C
T
A
(typ.) + 1V],
REG
=10mA
= [V
(typ.)+1V] to 12V
REG
= 10 mA
= 10 mA to 150 mA
= [V
(typ.)+1V]
REG
= 10 mA, 10 Hz to 1 kHz
= 10 mA, 10 Hz to
= 10 mA, 10 Hz to 1 MHz
< V
= V
BAT
REG
SS
= V
= V
= V
= V
(typ.)
SS
DD
SS
DD
© 2005 Microchip Technology Inc. DS21893C-page 3
MCP73861/2/3/4
DC CHARACTERISTICS (Continued)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [V
= -40°C to +85°C. Typical values are at +25°C, V
T
A
Parameters Sym Min Typ Max
Preconditioning Curre nt Regulation (T r ickle Charge Constant-Current Mode)
Precondition Current
I
PREG
Regulation
Precondition Threshold
Voltage
V
PTH
Charge Termination
Charge Termination
Current
I
TERM
Automatic Recharge
Recharge Threshold
V
RTH
Voltage
Thermistor Reference
Thermistor Reference
V
THREF
Output Voltage
Thermistor Reference
I
THREF
Source Current
Thermistor Reference Line
Regulation
Thermistor Reference Load
Regulation
|(ΔV
HREF
|ΔV
THREF/VT
)|/
ΔV
DD
THREF/VT
HREF|
Thermistor Comparator
Upper Trip Threshold V
Upper Trip Point Hysteresis V
Lower Trip Threshold V
Lower Trip Point Hysteresis V
Input Bias Current I
T1
T1HYS
T2
T2HYS
BIAS
Status Indicator – STAT1, STAT2
Sink Current I
Low Output Voltage V
Input Leakage Current I
SINK
OL
LK
Enable Input
Input High Voltage Level V
Input Low Voltage Level V
Input Leakage Current I
IH
IL
LK
= [V
DD
(typ.) + 1.0V]
REG
5 10 15 mA PROG = OPEN
60 120 180 mA PROG = V
25 50 75 mA PROG = 1.6 kΩ
2.70 2.80 2.90 V MCP73861/3, V
2.75 2.85 2.95 V MCP73861/3, V
5.40 5.60 5.80 V MCP73862/4, V
5.50 5.70 5.90 V MCP73862/4, V
6 8.5 11 mA PROG = OPEN
70 90 120 mA PROG = V
32 41 50 mA PROG = 1.6 kΩ
V
REG
300 mV
V
REG
600 mV
-
-
V
REG
200 mV
V
REG
400 mV
-
V
-
2.475 2.55 2.625 V TA = 25°C,
200 — — µA
— 0.1 0.25 %/V V
0.01 0.10 % I
1.18 1.25 1.32 V
—-50—mV
0.59 0.62 0.66 V
—80—mV
—— 2μA
4812mA
— 200 400 mV I
—0.01 1μAI
1.4 — — V
——0.8V
—0.01 1μAV
(typ.) + 0.3V] to 12V,
REG
Unit
s
T
A
V
BAT
T
A
-100 mV V MCP73861/3
REG
V
-
REG
V MCP73862/4
200 mV
V
BAT
V
DD
I
THREF
DD
12V
THREF
SINK
SINK
ENABLE
Conditions
SS
=-5°C to +55°C
Low-to-High
SS
=-5°C to +55°C
High-to-Low
= V
(typ.) + 1V,
REG
= 0 mA
= [V
(typ.) + 1V] to
REG
= 0 mA to 0.20 mA
= 1 mA
= 0 mA, V
STAT1,2
= 12V
SET
SET
SET
SET
= V
= V
= V
= V
SS
DD
SS
DD
= 12V
DS21893C-page 4 © 2005 Microchip Technology Inc.
DC CHARACTERISTICS (Continued)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [V
= -40°C to +85°C. Typical values are at +25°C, V
T
A
DD
= [V
REG
(typ.) + 1.0V]
Parameters Sym Min Typ Max
Thermal Shutdow n
Die Temperature T
Die Temperature
T
Hysteresis
SD
SDHYS
— 155 — °C
—10—°C
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for V
= -40°C to +85°C. Typical values are at +25°C, V
T
A
DD
= [V
(typ.) + 1.0V]
REG
Parameters Sym Min Typ Max Units Conditions
UVLO Start Delay t
START
—— 5 msVDD Low-to-High
Current Regulation
Transition Time Out of
t
DELAY
—— 1 msV
Preconditioning
Current Rise Time Out of
t
RISE
—— 1 msI
Preconditioning
Fast Charge Safety Timer
Period
t
FAST
1.1 1.5 1.9 Hours C
Preconditioning Current Regulation
Preconditioning Charge Safety
Timer Period
t
PRECON
45 60 75 Minutes C
Charge Termination
Elapsed Time Termination
Period
t
TERM
2.2 3 3.8 Hours C
Status Indicators
Status Output turn-off t
Status Output turn-on t
OFF
ON
— — 200 µs I
— — 200 µs I
DD
MCP73861/2/3/4
(typ.) + 0.3V] to 12V,
REG
= [V
Unit
s
(typ.) + 0.3V ] to 1 2 V,
REG
< V
BAT
Rising to 90% of I
OUT
TIMER
TIMER
TIMER
= 1mA to 0mA
SINK
= 0mA to 1mA
SINK
PTH
= 0.1 µF
= 0.1 µF
= 0.1 µF
to V
Conditions
> V
BAT
PTH
REG
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits apply for V
Typical values are at +25°C, V
DD
= [V
(typ.) + 1.0V]
REG
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
A
J
A
-40 — +85 °C
-40 — +125 °C
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 16-lead,
θ
JA
— 37 — °C/W 4-Layer JC51-7 Standard Board,
4 mm x 4 mm QFN
Thermal Resistance, 16-lead SOIC θ
JA
— 74 — °C/W 4-Layer JC51-7 Standard Board,
© 2005 Microchip Technology Inc. DS21893C-page 5
DD
= [V
(typ.) + 0.3V ] to 1 2 V.
REG
Natural Convection
Natural Convection
MCP73861/2/3/4
= 5.2V
MCP73861/3
DD
= 1000 mA
= 5.2V
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and t ables provided following this note are a statistical summary based on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
NOTE: Unless otherwise indicated, VDD = [V
(typ.) + 1V], I
REG
= 10 mA and TA= +25°C, Constant-voltage mode.
OUT
4.207
4.205
4.203
4.201
4.199
4.197
4.195
4.193
Battery Regulation Voltage (V)
10 100 1000
Charge Current (mA)
MCP73861/3
= V
V
SET
V
DD
DD
FIGURE 2-1: Battery Regulation Voltage
(V
) vs. Charge Current (I
BAT
4.40
4.30
4.20
4.10
4.00
3.90
3.80
Battery Regulation Voltage (V)
4.5 6.0 7.5 9.0 10.5 12.0
Supply Voltage (V)
OUT
).
V
= V
SET
I
OUT
1.00
0.90
0.80
0.70
0.60
0.50
Supply Current (mA)
0.40
10 100 1000
Charge Current (mA)
FIGURE 2-4: Supply Current (I
Charge Current (I
1.60
1.40
1.20
1.00
0.80
0.60
Supply Current (mA)
0.40
4.5 6.0 7.5 9.0 10.5 12.0
).
OUT
Supply Voltage (V)
I
OUT
MCP73861/3
V
= V
SET
V
DD
) vs.
SS
MCP73861/3
V
= V
SET
= 1000 mA
DD
DD
FIGURE 2-2: Battery Regulation Voltage
) vs. Supply Voltage (VDD).
(V
BAT
4.207
MCP73861/3
V
= V
SET
DD
I
= 10 mA
OUT
4.5 6.0 7.5 9.0 10.5 12.0
Supply Voltage (V)
Battery Regulation Voltage (V)
4.205
4.203
4.201
4.199
4.197
4.195
4.193
FIGURE 2-3: Battery Regulation Voltage
) vs. Supply Voltage (VDD).
(V
BAT
FIGURE 2-5: Supply Current (I
Supply Voltage (V
1.00
0.90
0.80
0.70
0.60
0.50
Supply Current (mA)
0.40
4.5 6.0 7.5 9.0 10.5 12.0
).
DD
Supply Voltage (V)
FIGURE 2-6: Supply Current (I
Supply Voltage (V
DD
).
) vs.
SS
MCP73861/3
V
= V
SET
I
= 10 mA
OUT
) vs.
SS
DD
DS21893C-page 6 © 2005 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
NOTE: Unless otherwise indicated, VDD = [V
(typ.) + 1V], I
REG
= 10 mA and TA= +25°C, Constant-voltage mode.
OUT
MCP73861/2/3/4
0.45
MCP73861/3
0.40
V
= V
SET
DD
VDD = V
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Output Leakage Current (µA)
SS
2.0 2 .4 2.8 3.2 3.6 4.0 4.4
Battery Regulation Voltage (V)
+85°C
+25°C
-40°C
FIGURE 2-7: Output Leakage Current
(I
DISCHARGE
(V
BAT
Therm. Reference Voltage (V)
) vs. Battery Regulation Voltage
).
2.550
MCP73861/3
= V
V
SET
I
THREF
DD
= 100 µA
Supply Voltage (V)
2.540
2.530
2.520
2.510
2.500
4.5 6.0 7.5 9.0 10.5 12.0
1.60
MCP73861/3
= V
V
SET
I
-40
OUT
DD
= 10 mA
0
-30
-20
Ambient Temperatur e (°C)
10203040506070
-10
1.40
1.20
1.00
0.80
0.60
Supply Current (mA)
0.40
FIGURE 2-10: Supply Current (I
Ambient Temperature (T
4.207
MCP73861/3
= V
V
Battery Regulation Voltage (V)
4.205
4.203
4.201
4.199
4.197
4.195
4.193
I
-40
SET
DD
= 10 mA
OUT
-30
-20
Ambient Temperature (°C)
).
A
0
10203040506070
-10
SS
80
) vs.
80
FIGURE 2-8: Thermistor Reference
Voltage (V
2.520
2.515
2.510
2.505
2.500
Therm. Reference Voltage (V)
) vs. Supply Voltage (VDD).
THREF
MCP73861/3
= V
V
SET
DD
0 25 50 75 100 125 150 175 200
Therm. Bias Current (µA)
FIGURE 2-9: Thermistor Reference
Voltage (V
(I
THREF
).
) vs. Thermistor Bias Current
THREF
FIGURE 2-11: Battery Regulation Voltage
(V
) vs. Ambient Temperature (TA).
BAT
2.520
MCP73861/3
= V
V
SET
DD
I
= 100 µA
THREF
2.515
2.510
2.505
2.500
Therm. Reference Voltage (V)
-40
-30
0
-20
10203040506070
-10
Ambient Temperatur e (° C)
80
FIGURE 2-12: Thermistor Reference
Voltage (V
) vs. Ambient Temperature (TA).
THREF
© 2005 Microchip Technology Inc. DS21893C-page 7
MCP73861/2/3/4
)
TYPICAL PERFORMANCE CURVES (CONTINUED)
NOTE: Unless otherwise indicated, VDD = [V
(typ.) + 1V], I
REG
= 10 mA and TA= +25°C, Constant-voltage mode.
OUT
8.407
MCP73862/4
= V
V
8.405
SET
DD
VDD = 9.4V
8.403
8.401
8.399
8.397
8.395
8.393
Battery Regulati on Volt age (V)
10 100 1000
Charge Current (mA)
FIGURE 2-13: Battery Regulation Voltage
(V
) vs. Charge Current (I
BAT
8.407
8.405
MCP73862/4
8.403
8.401
8.399
8.397
8.395
8.393
Battery Regulation Voltage (V
= V
V
SET
DD
I
= 1000 mA
OUT
10.0 10.4 10.8 11.2 11.6 12.0
Supply Voltage (V)
OUT
).
1.00
MCP73862/4
= V
V
SET
0.90
0.80
0.70
0.60
0.50
Supply Current (mA)
0.40
DD
VDD = 9.4V
10 100 1000
Charge Current (mA)
FIGURE 2-16: Supply Current (I
Charge Current (I
1.60
MCP73862/4
= V
V
SET
1.40
I
= 1000 mA
OUT
1.20
1.00
0.80
0.60
Supply Current (mA)
0.40
9.0 9.5 10.0 10.5 11.0 11.5 12.0
).
OUT
DD
Supply Voltage (V)
SS
) vs.
FIGURE 2-14: Battery Regulation Voltage
) vs. Supply Voltage (VDD).
(V
BAT
8.412
MCP73862/4
= V
V
SET
8.410
8.408
8.406
8.404
8.402
8.400
8.398
Battery Regulation Voltage (V)
DD
I
= 10 mA
OUT
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Supply Voltage (V)
FIGURE 2-15: Battery Regulation Voltage
) vs. Supply Voltage (VDD).
(V
BAT
FIGURE 2-17: Supply Current (I
Supply Voltage (V
1.00
MCP73862/4
= V
V
SET
0.90
I
= 10 mA
OUT
0.80
0.70
0.60
0.50
Supply Current (mA)
0.40
9.0 9.5 10.0 10.5 11.0 11.5 12.0
).
DD
DD
Supply Voltage (V)
FIGURE 2-18: Supply Current (I
Supply Voltage (V
DD
).
SS
SS
) vs.
) vs.
DS21893C-page 8 © 2005 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
NOTE: Unless otherwise indicated, VDD = [V
(typ.) + 1V], I
REG
= 10 mA and TA= +25°C, Constant-voltage mode.
OUT
MCP73861/2/3/4
0.45
MCP73862/4
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Output Leakage Current (µA)
= V
V
SET
DD
VDD = V
SS
4.0 4.8 5.6 6.4 7.2 8.0 8.8
Battery Regulation Voltage (V)
+85°C
+25°C
-40°C
FIGURE 2-19: Output Leakage Current
(I
DISCHARGE
(V
BAT
Therm. Reference Voltage (V)
) vs. Battery Regulation Voltage
).
2.570
MCP73862/4
= V
V
SET
DD
I
= 100 µA
THREF
2.560
2.550
2.540
2.530
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Supply Voltage (V)
1.60
MCP73862/4
= V
V
SET
I
-40
OUT
DD
= 10 mA
0
-30
-20
10203040506070
-10
Ambient Temperature (°C)
1.40
1.20
1.00
0.80
0.60
Supply Current (mA)
0.40
FIGURE 2-22: Supply Current (I
Ambient Temperature (T
8.414
8.410
8.406
8.402
8.398
8.394
8.390
8.386
Battery Regulation Voltage (V)
-40
-30
-20
).
A
0
10203040506070
-10
Ambient Temperature (°C)
) vs.
SS
MCP73862/4
= V
V
SET
I
= 10 mA
OUT
80
DD
80
FIGURE 2-20: Thermistor Reference
Voltage (V
2.550
2.548
2.546
2.544
2.542
2.540
Therm. Reference Voltage (V)
) vs. Supply Voltage (VDD).
THREF
MCP73862/4
= V
V
SET
DD
0 25 50 75 100 125 150 175 200
Thermistor Bias Current (µA)
FIGURE 2-21: Thermistor Reference
Voltage (V
(I
THREF
).
) vs. Thermistor Bias Current
THREF
FIGURE 2-23: Battery Regulation Voltage
(V
) vs. Ambient Temperature (TA).
BAT
2.550
2.546
2.542
2.538
2.534
2.530
Therm. Reference Voltage (V)
-40
-30
0
-20
10203040506070
-10
Ambient Temperature (°C)
MCP73862/4
V
SET
I
= 100 µA
THREF
= V
DD
80
FIGURE 2-24: Thermistor Reference
Voltage (V
) vs. Ambient Temperature (TA).
THREF
© 2005 Microchip Technology Inc. DS21893C-page 9
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