MICROCHIP MCP73833, MCP73834 Technical data
MCP73833/4
Stand-Alone Linear Li-Ion / Li-Polymer Charge
Management Controller
Features
• Complete Linear Charge Management Controller
- Integrated Pass Transistor
- Integrated Current Sense
- Integrated Reverse Discharge Protection
• Constant Current / Constant Voltage Operation
with Thermal Regulation
• High Accuracy Preset Voltage Regulation:
- 4.2V, 4.35V, 4.4V, or 4.5V, +
0.75%
• Programmable Charge Current: 1A Maximum
• Preconditioning of Deeply Depleted Cells
- Selectable Current Ratio
- Selectable Voltage Threshold
• Automatic End-of-Charge Control
- Selectable Current Threshold
- Selectable Safety Time Period
• Automatic Recharge
- Selectable Voltage Threshold
• Two Charge Status Outputs
• Cell Temperature Monitor
• Low-Dropout Linear Regulator Mode
• Automatic Power-Down when Input Power
Removed
• Under Voltage Lockout
• Numerous Selectable Options Available for a
Variety of Applications:
- Refer to Section 1.0 “Electrical
Characteristics” for Selectable Options
- Refer to the ”Product Identification
System” for Standard Options
• Available Packages:
- 3mm x 3mm DFN-10
- MSOP-10
Applications
• Lithium-Ion / Lithium-Polymer Battery Chargers
• Personal Data Assistants
• Cellular Telephones
• Digital Cameras
• MP3 Players
• Bluetooth Headsets
• USB Chargers
Description
The MCP73833/4 is a highly advanced linear charge
management controller for use in space-limited, cost
sensitive applications. The MCP73833/4 is available in
a 10-Lead, 3mm x 3mm DFN package or a 10-Lead,
MSOP package. Along with its small physical size, the
low number of external components required makes
the MCP73833/4 ideally suited for portable applications. For applications charging from a USB port, the
MCP73833/4 can adhere to all the specifications
governing the USB power bus.
The MCP73833/4 employs a constant current/constant
voltage charge algorithm with selectable preconditioning and charge termination. The constant voltage
regulation is fixed with four available options: 4.20V,
4.35V, 4.40V, or 4.50V, to accomodate new, emerging
battery charging requirements. The constant current
value is set with one external resistor. The
MCP73833/4 limits the charge current based on die
temperature during high power or high ambient conditions. This thermal regulation optimizes the charge
cycle time while maintaining device reliability.
Several options are available for the preconditioning
threshold, preconditioning current value, charge
termination value, and automatic recharge threshold.
The preconditioning value and charge termination
value are set as a ratio, or percentage, of the
programmed constant current value. Preconditioning
can be set
to 100%. Refer to Section 1.0 “Electrical
Characteristics” for available options and the
“Product Indentification System” for standard
options.
The MCP73833/4 is fully specified over the ambient
temperature range of -40°C to +85°C.
Package Types
DFN-10
MSOP-10
V
V
STAT1
STAT2
V
STAT1
STAT2
DD
DD
SS
V
1
DD
V
2
DD
3
4
56
V
SS
110
2
3
4
5
10
9
8
7
9
8
7
6
V
V
THERM
PG(TE)
PROG
BAT
BAT
V
BAT
V
BAT
THERM
PG
(TE)
PROG
© 2006 Microchip Technology Inc. DS22005A-page 1
MCP73833/4
Typical Application
V
IN
1µF
Functional Block Diagram
V
DD
10 µA
Direction
Control
1A Li-Ion Battery Charger
1,2
V
DD
38
470Ω
4
470Ω
7
STAT1
STAT2
PG
THERM
PROG
470Ω
MCP73833
9,10
V
BAT
6
5
V
SS
1µF
1kΩ
Single
+
Li-Ion
Cell
T
10 kΩ
V
BAT
PROG
V
SS
THERM
175 kΩ
54 kΩ
121 kΩ
1MΩ
6µA
Reference
Generator
(1.21V)
V
REF
6µA
50 µA
121 kΩ
G=0.001
G=0.001
+
-
+
-
+
-
+
-
+
-
1kΩ
310 kΩ
72.7 kΩ
6kΩ
157.3 kΩ
SHDN
LDO
UVLO
HTVT470.6kΩ
LTV T
111 kΩ
+
PRECONDITION
+
TERMINATIO N
+
-
CHARG E
Charge
Control,
Timer,
and
Status
Logic
10 kΩ
470.6 kΩ
48 kΩ
CURRENT
LIMIT
+
-
CA
+
-
VA
+
-
STAT1
STAT2
PG (TE)
DS22005A-page 2 © 2006 Microchip Technology Inc.
MCP73833/4
1.0 ELECTRICAL CHARACTERISTICS
*Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
Absolute Maximum Ratings
VDD........................................................................7.0V
All Inputs and Outputs w.r.t. V
Maximum Junction Temperature, T
.....-0.3 to (VDD+0.3)V
SS
. Internally Limited
J
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Storage temperature .......................... -65°C to +150°C
ESD protection on all pins:
Human Body Model (HBM)
(1.5 kΩ in Series with 100 pF)............................... ≥ 4kV
Machine Model (MM)
(200 pF, No Series Resistance) ...........................300V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [V
Typical values are at +25°C, V
DD
= [V
(Typ)+1.0V]
REG
Parameters Sym Min Typ Max Units Conditions
Supply Input
Supply Voltage V
Supply Current I
DD
SS
3.75 — 6 V Charging
V
REG
(Typ)
+0.3V
— 6 V Charge Complete, Standby
— 2000 3000 µA Charging
— 150 300 µA Charge Complete
— 100 300 µA Standby (No Battery or PROG
— 50 100 µA Shutdown (V
UVLO Start Threshold V
UVLO Stop Threshold V
UVLO Hysteresis V
START
STOP
HYS
3.4 3.55 3.7 V VDD Low to High
3.3 3.45 3.6 V VDD High to Low
— 100 — mV
Voltage Regulation (Constant Voltage Mode, System Test Mode)
Regulated Output Voltage V
REG
4.168 4.20 4.232 V VDD=[V
4.318 4.35 4.382 V I
4.367 4.40 4.433 V T
4.467 4.50 4.533 V
)
Line Regulation |(ΔV
Load Regulation |ΔV
BAT/VBAT
/ΔV
DD
/ V
BAT
|
BAT
— 0.10 0.30 %/V V
| — 0.10 0.30 % I
Supply Ripple Attenuation PSRR — 58 — dB I
—47— dBI
—25— dBI
Current Regulation (Fast Charge Constant Current Mode)
Fast Charge Current Regulation I
REG
90 100 110 mA PROG = 10 kΩ
900 1000 1100 mA PROG = 1.0 kΩ
Maximum Output Current Limit I
MAX
— 1200 — mA PROG < 833Ω
(Typ)+0.3V] to 6V, TA=-40°C to 85°C.
REG
Floating)
< V
V
< V
DD
OUT
=-5°C to +55°C
A
=[V
DD
I
OUT
OUT
V
=[V
DD
OUT
OUT
OUT
=-5°C to +55°C
T
A
DD
)
STOP
(Typ)+1V]
REG
=10 mA
(Typ)+1V] to 6V
REG
=10 mA
=10 mA to 100 mA
(Typ)+1V]
REG
=10 mA, 10Hz to 1 kHz
=10 mA, 10Hz to 10 kHz
=10 mA, 10Hz to 1 MHz
BAT
, or
© 2006 Microchip Technology Inc. DS22005A-page 3
MCP73833/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [V
Typical values are at +25°C, V
Parameters Sym Min Typ Max Units Conditions
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio I
Precondition Voltage Threshold
Ratio
Precondition Hysteresis V
Charge Termination
Charge Termination Current Ratio I
Automatic Recharge
Recharge Voltage Threshold Ratio V
Pass Transistor ON-Resistance
ON-Resistance R
Battery Discharge Current
Output Reverse Leakage Current I
Status Indicators - STAT1, STAT2, PG
Sink Current I
Low Output Voltage V
Input Leakage Current I
PROG Input
Charge Impedance Range R
Standy Impedance R
Thermistor Bias
Thermistor Current Source I
Thermistor Comparator
Upper Trip Threshold V
Upper Trip Point Hysteresis V
Lower Trip Threshold V
Lower Trip Point Hysteresis V
System Test (LDO) Mode
Input High Voltage Level V
THERM Input Sink Current I
Bypass Capacitance C
DD
= [V
(Typ)+1.0V]
REG
PREG
V
PTH
TERM
RTH
DISCHARGE
THERM
T1HYS
T2HYS
/ I
/ V
PHYS
/ I
/ V
DSON
SINK
OL
LK
PROG
PROG
T1
T2
IH
SINK
BAT
REG
REG
REG
REG
7.5 10 12.5 % PROG = 1.0 kΩ to 10 kΩ
15 20 25 % T
30 40 50 %
— 100 — %
64 66.5 70 % V
69 71.5 75 %
— 100 — mV V
3.75 5 6.25 % PROG = 1.0 kΩ to 10 kΩ
5.6 7.5 9.4 % T
7.5 10 12.5 %
15 20 25 %
— 94.0 — % V
— 96.5 — %
— 300 — mΩ VDD = 3.75V
— 0.15 2 µA PROG Floating
—0.25 2 µAV
—0.15 2 µAVDD < V
— -5.5 -15 µA Charge Complete
—1525mA
—0.4 1 VI
— 0.01 1 µA High Impedance, 6V on pin
1—20kΩ
70 — 200 kΩ Minimum Impedance for
47 50 53 µA 2 kΩ < R
1.20 1.23 1.26 V V
—-50—mV
0.235 0.25 0.265 V V
—50—mV
(VDD-0.1)
—— V
3 6 20 µA Stand-by or system test mode
1——µFI
4.7 — — µF I
(Typ)+0.3V] to 6V, TA=-40°C to 85°C.
REG
=-5°C to +55°C
A
Low to High
BAT
High to Low
BAT
=-5°C to +55°C
A
High to Low
BAT
= 105°C
T
J
< V
DD
BAT
STOP
= 4 mA
SINK
Standby
THERM
Low to High
THERM
High to Low
THERM
< 250 mA
OUT
> 250 mA
OUT
< 50 kΩ
DS22005A-page 4 © 2006 Microchip Technology Inc.
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [V
Typical values are at +25°C, V
DD
= [V
(Typ)+1.0V]
REG
Parameters Sym Min Typ Max Units Conditions
Automatic Power Down
Automatic Power Down Entry
Threshold
Automatic Power Down Exit Thresh-
old
Timer Enable Input (TE
)
V
PDEXIT
Input High Voltage Level V
Input Low Voltage Level V
Input Leakage Current I
V
PD
—V
—V
IH
IL
LK
2.0 — — V
——0.6 V
—0.01 1 µAV
+
BAT
50 mV
+
BAT
150 mV
Thermal Shutdown
Die Temperature T
Die Temperature Hysteresis T
SD
SDHYS
— 150 — °C
—10— °C
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [V
Typical values are at +25°C, V
Parameters Sym Min Typ Max Units Conditions
UVLO Start Delay t
Current Regulation
Transition Time Out of Preconditioning t
Current Rise Time Out of Preconditioning t
Preconditioning Comparator Filter Time t
Termination Comparator Filter Time t
Comparator Filter Time t
Charge
Thermistor Comparator Filter Time t
Elapsed Timer
Elapsed Timer Period t
Status Indicators
Status Output turn-off t
Status Output turn-on t
DD
= [V
(Typ)+1.0V]
REG
START
DELAY
RISE
PRECON
TERM
CHARGE
THERM
ELAPSED
OFF
ON
—— 5 msV
—— 1 msV
—— 1 msI
0.4 1.3 3.2 ms Average V
0.4 1.3 3.2 ms Average I
0.4 1.3 3.2 ms Average V
0.4 1.3 3.2 ms Average THERM Rise/Fall
0 0 0 Hours Timer Disabled
3.6 4.0 4.4 Hours
5.4 6.0 6.6 Hours
7.2 8.0 8.8 Hours
— — 200 µs I
— — 200 µs I
MCP73833/4
(Typ)+0.3V] to 6V, TA=-40°C to 85°C.
REG
— V 2.3V < V
VDD Falling
— V 2.3V < V
VDD Rising
(Typ)+0.3V] to 6V, TA=-40°C to 85°C.
REG
BAT
BAT
= 6V
TE
Low to High
DD
BAT<VPTH
Rising to 90% of I
OUT
= 1 mA to 0 mA
SINK
= 0 mA to 1 mA
SINK
< V
< V
to V
BAT
OUT
BAT
REG
REG
BAT>VPTH
REG
Rise/Fall
Falling
Falling
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise specified, all limits apply for V
Typical values are at +25°C, V
DD
= [V
(Typ)+1.0V]
REG
Parameters Symbol Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
A
A
A
-40 — +85 °C
-40 — +125 °C
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, MSOP-10 θ
Thermal Resistance, 3mm x 3mm DFN-10 θ
JA
JA
— 113 — °C/W 4-Layer JC51-7 Standard
— 41 — °C/W 4-Layer JC51-7 Standard
© 2006 Microchip Technology Inc. DS22005A-page 5
DD
= [V
REG
(Typ)+0.3V] to 6V.
Board, Natural Convection
Board, Natural Convection
MCP73833/4
P
:
:
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = 5.2V, V
REG
= 4.20V, I
= 10 mA and TA= +25°C, Constant-voltage mode.
OUT
4.210
4.205
4.200
4.195
4.190
(V)
4.185
4.180
4.175
Battery Regulation Voltage
4.170
4.50 4.75 5.00 5.25 5.50 5.75 6.00
Supply Voltage (V)
MCP73833
I
= 10 mA
OUT
I
= 100 mA
OUT
I
= 500 mA
OUT
I
= 900 mA
OUT
FIGURE 2-1: Battery Regulation Voltage
(V
) vs. Supply Voltage (VDD).
BAT
4.220
MCP73833
4.210
4.200
4.190
4.180
I
= 500 mA
4.170
4.160
Battery Regulation Voltage (V)
OUT
I
= 900 mA
OUT
-40
-30
0
-20
-10
Ambient Temperature (°C)
10203040506070
I
OUT
I
OUT
= 10 mA
= 100 mA
80
1000
100
Charge Current (mA)
10
1 3 5 7 9 11 13 15 17 19 21
Programming Resistor (k:)
FIGURE 2-4: Charge Current (I
Programming Resistor (R
104
103
102
101
100
99
98
Charge Current (mA)
97
96
4.50 4.75 5.00 5.25 5.50 5.75 6.00
Supply Voltage (V)
PROG
).
R
PROG
OUT
= 10 k
) vs.
FIGURE 2-2: Battery Regulation Voltage
) vs. Ambient Temperature (TA).
(V
BAT
0.40
A)
0.35
+85°C
0.30
-40°C
0.25
0.20
+25°C
0.15
0.10
0.05
Output Leakage Current (
0.00
3.00 3.20 3.40 3.60 3.80 4.00 4.20
Battery Regulation Voltage (V)
FIGURE 2-3: Output Leakage Current
(I
DISCHARGE
(V
BAT
) vs. Battery Regulation Voltage
).
FIGURE 2-5: Charge Current (I
Supply Voltage (V
1004
1002
1000
998
996
994
992
990
Charge Current (mA)
988
986
4.50 4.75 5.00 5.25 5.50 5.75 6.00
).
DD
Supply Voltage (V)
FIGURE 2-6: Charge Current (I
Supply Voltage (V
DD
).
) vs.
OUT
R
= 1 k
PROG
) vs.
OUT
DS22005A-page 6 © 2006 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (Continued)
:
:
P
MCP73833/4
Note: Unless otherwise indicated, VDD = 5.2V, V
120
100
80
60
40
20
Charge Current (mA)
0
25354555657585
Junction Temperature (°C)
FIGURE 2-7: Charge Current (I
Junction Temperature (T
1200
1000
800
600
400
200
Charge Current (mA)
0
25354555657585
Junction Temperature (°C)
).
J
R
= 10 k
PROG
95
105
115
125
135
) vs.
OUT
R
= 1 k
PROG
95
105
115
125
135
REG
145
145
= 4.20V, I
155
155
= 10 mA and TA= +25°C, Constant-voltage mode.
OUT
52.0
51.5
51.0
50.5
50.0
49.5
49.0
48.5
48.0
Thermistor Bias Current (µA)
-40
-30
0
-20
Ambient Temperature (°C)
10203040506070
-10
FIGURE 2-10: Thermistor Bias Current
(I
THRERM
) vs. Ambient Temperature (TA).
0
VAC = 100 mVp-p
= 10 mA
I
OUT
-10
= 4.7 µF, X7R
C
OUT
-20
Ceramic
-30
-40
-50
Attenuation (dB)
-60
-70
0.01 0.1 1 10 100 1000
Frequency (kHz)
80
FIGURE 2-8: Charge Current (I
Junction Temperature (T
52.0
A)
51.5
51.0
50.5
50.0
49.5
49.0
48.5
Thermistor Bias Current (
48.0
4.50 4.75 5.00 5.25 5.50 5.75 6.00
).
J
Supply Voltage (V)
FIGURE 2-9: Thermistor Bias Current
(I
THRERM
) vs. Supply Voltage (VDD).
OUT
) vs.
FIGURE 2-11: Power Supply Ripple Rejection (PSRR).
0
VAC = 100 mVp-p
= 100 mA
I
OUT
-10
= 4.7 µF, X7R
C
OUT
Ceramic
-20
-30
-40
Attenuation (dB)
-50
-60
0.01 0.1 1 10 100 1000
Frequency (kHz)
FIGURE 2-12: Power Supply Ripple Rejection (PSRR).
© 2006 Microchip Technology Inc. DS22005A-page 7
MCP73833/4
:
:
TYPICAL PERFORMANCE CURVES (Continued)
Note: Unless otherwise indicated, VDD = 5.2V, V
14
12
10
8
6
4
I
2
Source Voltage (V)
0
-2
0
204060
Time (µs)
= 10 mA
OUT
= 4.7 µF, X7R
C
OUT
Ceramic
80
100
120
140
160
180
REG
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
200
FIGURE 2-13: Line Transient Response.
14
12
10
8
6
4
2
Source Voltage (V)
0
-2
0
204060
80
100
Time (µs)
I
= 100 mA
OUT
= 4.7 µF, X7R
C
OUT
Ceramic
120
140
160
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
180
200
= 4.20V, I
Output Ripple (V)
Output Ripple (V)
= 10 mA and TA= +25°C, Constant-voltage mode.
OUT
Output Current (A)
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
-0.20
0
C
Ceramic
204060
= 4.7 µF, X7R
OUT
80
Time (µs)
100
120
140
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
160
180
200
FIGURE 2-16: Load Transient Response.
5.0
4.0
3.0
2.0
MCP73833-FCI/MF
1.0
Battery Voltage (V)
V
= 5.2V
DD
R
= 10.0 k
PROG
0.0
0
30
60
90
Time (Minutes)
120
150
180
200
160
120
80
40
0
210
Output Ripple (V)
Charge Current (A)
FIGURE 2-14: Line Transient Response.
Output Current (A)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-0.05
0
204060
C
= 4.7 µF, X7R
OUT
Ceramic
80
Time (µs)
100
120
140
0.04
0.02
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
160
180
200
FIGURE 2-15: Load Transient Response.
Output Ripple (V)
FIGURE 2-17: Complete Charge Cycle
(180 mA Li-Ion Battery).
5.0
4.0
3.0
2.0
Battery Voltage (V)
1.0
0.0
0246810
Time (Minutes)
MCP73833-FCI/MF
V
DD
R
= 10.0 k
PROG
= 5.2V
200
160
120
80
40
0
FIGURE 2-18: Charge Cycle Start Preconditioning (180 mAh Li-Ion Battery).
Charge Current (A)
DS22005A-page 8 © 2006 Microchip Technology Inc.
Loading...