MICROCHIP MCP73826 Technical data
M
MCP73826
Single Cell Lithium-Ion Charge Management Controller
Features
• Linear Charge Management Controller for Single
Lithium-Ion Cells
• High Accuracy Preset Voltage Regulation:
+
1% (max)
• Two Preset Voltage Regulation Options:
- 4.1V - MCP73826-4.1
- 4.2V - MCP73826-4.2
• Programmable Charge Current
• Automatic Cell Preconditioning of Deeply
Depleted Cells, Minimizing Heat Dissipation During Initial Charge Cycle
• Automatic Power-Down when Input Power
Removed
• Temperature Range: -20°C to +85°C
• Packaging: 6-Pin SOT-23A
Applications
• Single Cell Lithium-Ion Battery Chargers
• Personal Data Assistants
• Cellular Telephones
• Hand Held Instruments
• Cradle Chargers
• Digital Cameras
Typical Application Circuit
500 mA Lithium-Ion Batt ery Charger
V
IN
5V
MA2Q705
10 µF
100 k
100 m
Ω
NDS8434
Ω
4
6
V
V
DRV
SNS
5
V
IN
12
SHDN
MCP73826
V
GND
BAT
3
10 µF
+
Single
Lithium-Ion
-
Cell
Description
The MCP73826 is a linear charge management controller for use in space-limited, cost sensitive applications. The MCP73826 combines high accuracy
constant voltage, controlled current regulation, and cell
preconditioning in a space saving 6-pin SOT-23A package. The MCP73826 provides a stand-alone charge
management solution.
The MCP73826 charges the battery in three phases:
preconditioning, controlled current, and constant voltage. If the battery voltage is below the internal low-voltage threshold, the battery is preconditioned with a
foldback current. The preconditioning phase protects
the lithium-ion cell and minimizes heat dissipation.
Following the preconditioning phase, the MCP73826
enters the controlled current phase. The MCP73826
allows for design flexibility with a programmable charge
current set by an external sense resistor. The charge
current is ramped up, based on the cell voltage, from
the foldback current to the peak charge current established by the sense resistor. This phase is maintained
until the battery reaches the charge-regulation voltage.
Then, the MCP73826 enters the final phase, constant
voltage. The accuracy of the voltage regulation is better
than ±1% over the entire operating temperature range
and supply voltage range. The MCP73826-4.1 is preset
to a regulation voltage of 4.1V, while the MCP73826-
4.2 is preset to 4.2V.
The MCP73826 operates with an input voltage range
from 4.5V to 5.5V. The MCP73826 is fully specified
over the ambient temperature range of -20°C to +85°C.
Package Type
6-Pin SOT-23A
SHDN
GND
V
BAT
1
2
3
MCP73826
V
6
SNS
V
5
IN
V
4
DRV
2002 Microchip Technology Inc. DS21705A-page 1
MCP73826
Functional Block Diagram
DRV
V
IN
V
BAT
V
(NOTE 1)
352.5 kΩ
REF
V
+
–
+
75 kΩ
–
AMPLIFIER
VOLTAGE CONTROL
CHARGE CURRENT
CONTROL AMPLIFIER
GND
75 kΩ
500 kΩ
12 kΩ
(1.2V)
REF
V
CHARGE
CURRENT
AMPLIFIER
–
+
1.1 kΩ
IN
V
SNS
V
IN
V
SHUTDOWN,
REFERENCE
GENERATOR
112 .5 kΩ
REF
V
SHDN
0.3V CLAMP
+
–
CHARGE CURRENT
FOLDBACK AMPLIFIER
37.5 kΩ
NOTE 1: Value = 340.5KΩ for MCP73826-4.1
Value = 352.5KΩ for MCP73826-4.2
DS21705A-page 2 2002 Microchip Technology Inc.
MCP73826
1.0 ELECTRICAL
PIN FUNCTION TABLE
CHARACTERISTICS
Pin Name Description
1.1 Maximum Ratings*
VIN ................................................................................... -0.3V to 6.0V
All inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)V
Current at V
Maximum Junction Temperature, T
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins..................................................≥ 4kV
*Notice: Stresses above those listed under “Maximum Ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
.......................................................... +/-1 mA
DRV
.............................. 150°C
J
1 SHDN Logic Shutdown
2 GND Battery Management
0V Reference
3
4V
5V
V
BAT
DRV
IN
Cell Voltage Monitor Input
Drive Output
Battery Management
Input Supply
6V
SNS
Charge Current Sense Input
DC CHARACTERISTICS: MCP73826-4.1, MCP73826-4.2
Unless otherwise specified, all limits apply for VIN = [V
Typical values are at +25°C. Refer to Figure 1-1 for test circuit.
Parameter Sym Min Typ Max Units Conditions
Supply Voltage V
Supply Current I
Voltage Regulation (Constant Voltage Mode)
Regulated Output Voltage V
Line Regulation ∆V
Load Regulation ∆V
Output Reverse Leakage Current I
External MOSFET Gate Drive
Gate Drive Current I
Gate Drive Minimum Voltage V
Current Regulation (Controlled Current Mode)
Current Sense Gain A
Current Limit Threshold V
Foldback Current Scale Factor K — 0.43 — A/A
Shutdown Input - SHDN
Input High Voltage Level V
Input Low Voltage Level V
Input Leakage Current I
REG
IN
IN
REG
BAT
BAT
LK
DRV
DRV
CS
CS
IH
IL
LK
(typ)+1V], R
4.5
—
—
4.059
4.158
SENSE
—
0.5
260
4.1
4.2
= 500 mΩ, T
5.5 V
15
560
4.141
4.242
= -20°C to +85°C.
A
-10 — 10 mV VIN = 4.5V to 5.5V,
-1 +0.2 1 mV I
—8—µAV
—
0.08
—
—
1
—
—1.6— V
—100— dB∆(V
40 53 75 mV (VIN-V
40 — — %V
——25%V
—— 1 µAV
µA Shutdown, V
Constant Voltage Mode
V
MCP73826-4.1 only
V
MCP73826-4.2 only
I
OUT
OUT
=Floating, V
IN
SHDN
= 75 mA
= 10 mA to 75 mA
mAmASink, CV Mode
Source, CV Mode
SNS-VDRV
) at I
SNS
IN
IN
= 0V to 5.5V
SHDN
= 0V
BAT=VREG
) / ∆V
BAT
OUT
TEMPERATURE SPECIFICATIONS
Unless otherwise specified, all limits apply for VIN = 4.5V-5.5V
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
A
A
A
Thermal Package Resistances
Thermal Resistance, 6-Pin SOT-23A θ
2002 Microchip Technology Inc. DS21705A-page 3
JA
-20 — +85 °C
-40 — +125 °C
-65 — +150 °C
—230— °C/W
4-Layer JC51-7 Standard
Board, Natural Convection
MCP73826
VIN = 5.1V
(MCP73826-4.1)
= 5.2V
V
IN
(MCP73826-4.2)
22 µF
FIGURE 1-1: MCP73826 Test Circuit.
100 k Ω
R
SENSE
5
1
6
V
SNS
V
IN
SHDN
MCP73826
NDS8434
4
V
DRV
V
GND
BAT
I
OUT
V
OUT
3
2
22 µF
DS21705A-page 4 2002 Microchip Technology Inc.
MCP73826
2.0 TYPICAL PERFORMANCE CHARACTERISTICS
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, I
= 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit.
OUT
FIGURE 2-1: Output Voltage vs. Output Current (MCP73826-4.2).
FIGURE 2-2: Output Voltage vs. Input Voltage (MCP73826-4.2).
FIGURE 2-4: Supply Current vs. Output Current.
FIGURE 2-5: Supply Current vs. Input Voltage.
FIGURE 2-3: Output Voltage vs. Input Voltage
(MCP73826-4.2).
2002 Microchip Technology Inc. DS21705A-page 5
FIGURE 2-6: Supply Current vs. Input Voltage.
MCP73826
Note: Unless otherwise indicated, I
FIGURE 2-7: Output Reverse Leakage Current vs. Output Voltage.
= 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit.
OUT
FIGURE 2-10: Supply Current vs. Temperature.
FIGURE 2-8: Output Reverse Leakage Current vs.
Output Voltage.
FIGURE 2-9: Current Limit Foldback.
FIGURE 2-11: Output Voltage vs. Temperature
(MCP73826-4.2).
FIGURE 2-12: Power-Up / Power-Down.
DS21705A-page 6 2002 Microchip Technology Inc.
MCP73826
Note: Unless otherwise indicated, I
FIGURE 2-13: Line Transient Response.
= 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit.
OUT
FIGURE 2-15: Load Transient Response.
FIGURE 2-14: Line Transient Response.
FIGURE 2-16: Load Transient Response.
2002 Microchip Technology Inc. DS21705A-page 7
MCP73826
3.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
Pin Name Description
1 SHDN Logic Shutdown
2 GND Battery Management
0V Reference
3
4V
5V
6V
TABLE 3-1: Pin Function Table.
V
BAT
DRV
IN
SNS
3.1 Logic Shutdown (SHDN)
Input to force charge termination, initiate charge, or initiate recharge.
3.2 Battery Management 0V Reference (GND)
Connect to negative terminal of battery.
Cell Voltage Monitor Input
Drive Output
Battery Management
Input Supply
Charge Current Sense Input
3.4 Drive Output (V
Direct output drive of an external P-channel MOSFET
pass transistor for current and voltage regulation.
DRV
)
3.5 Battery Management Input Supply (VIN)
A supply voltage of 4.5V to 5.5V is recommended.
Bypass to GND with a minimum of 10 µF.
3.6 Charge Current Sense Input (V
Charge current is sensed via the voltage developed
across an external precision sense resistor. The sense
resistor must be placed between the supply voltage
(V
) and the source of the external pass transistor. A
IN
50 mΩ sense resistor produces a fast charge current of
1A, typically.
SNS
)
3.3 Cell Voltage Monitor Input (V
Voltage sense input. Connect to positive terminal of
battery. Bypass to GND with a minimum of 10 µF to
ensure loop stability when the battery is disconnected.
A precision internal resistor divider regulates the final
voltage on this pin to V
REG
.
BAT
)
DS21705A-page 8 2002 Microchip Technology Inc.
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