M
MCP73826
Single Cell Lithium-Ion Charge Management Controller
Features
• Linear Charge Management Controller for Single
Lithium-Ion Cells
• High Accuracy Preset Voltage Regulation:
+
1% (max)
• Two Preset Voltage Regulation Options:
- 4.1V - MCP73826-4.1
- 4.2V - MCP73826-4.2
• Programmable Charge Current
• Automatic Cell Preconditioning of Deeply
Depleted Cells, Minimizing Heat Dissipation During Initial Charge Cycle
• Automatic Power-Down when Input Power
Removed
• Temperature Range: -20°C to +85°C
• Packaging: 6-Pin SOT-23A
Applications
• Single Cell Lithium-Ion Battery Chargers
• Personal Data Assistants
• Cellular Telephones
• Hand Held Instruments
• Cradle Chargers
• Digital Cameras
Typical Application Circuit
500 mA Lithium-Ion Batt ery Charger
V
IN
5V
MA2Q705
10 µF
100 k
100 m
Ω
NDS8434
Ω
4
6
V
V
DRV
SNS
5
V
IN
12
SHDN
MCP73826
V
GND
BAT
3
10 µF
+
Single
Lithium-Ion
-
Cell
Description
The MCP73826 is a linear charge management controller for use in space-limited, cost sensitive applications. The MCP73826 combines high accuracy
constant voltage, controlled current regulation, and cell
preconditioning in a space saving 6-pin SOT-23A package. The MCP73826 provides a stand-alone charge
management solution.
The MCP73826 charges the battery in three phases:
preconditioning, controlled current, and constant voltage. If the battery voltage is below the internal low-voltage threshold, the battery is preconditioned with a
foldback current. The preconditioning phase protects
the lithium-ion cell and minimizes heat dissipation.
Following the preconditioning phase, the MCP73826
enters the controlled current phase. The MCP73826
allows for design flexibility with a programmable charge
current set by an external sense resistor. The charge
current is ramped up, based on the cell voltage, from
the foldback current to the peak charge current established by the sense resistor. This phase is maintained
until the battery reaches the charge-regulation voltage.
Then, the MCP73826 enters the final phase, constant
voltage. The accuracy of the voltage regulation is better
than ±1% over the entire operating temperature range
and supply voltage range. The MCP73826-4.1 is preset
to a regulation voltage of 4.1V, while the MCP73826-
4.2 is preset to 4.2V.
The MCP73826 operates with an input voltage range
from 4.5V to 5.5V. The MCP73826 is fully specified
over the ambient temperature range of -20°C to +85°C.
Package Type
6-Pin SOT-23A
SHDN
GND
V
BAT
1
2
3
MCP73826
V
6
SNS
V
5
IN
V
4
DRV
2002 Microchip Technology Inc. DS21705A-page 1
MCP73826
Functional Block Diagram
DRV
V
IN
V
BAT
V
(NOTE 1)
352.5 kΩ
REF
V
+
–
+
75 kΩ
–
AMPLIFIER
VOLTAGE CONTROL
CHARGE CURRENT
CONTROL AMPLIFIER
GND
75 kΩ
500 kΩ
12 kΩ
(1.2V)
REF
V
CHARGE
CURRENT
AMPLIFIER
–
+
1.1 kΩ
IN
V
SNS
V
IN
V
SHUTDOWN,
REFERENCE
GENERATOR
112 .5 kΩ
REF
V
SHDN
0.3V CLAMP
+
–
CHARGE CURRENT
FOLDBACK AMPLIFIER
37.5 kΩ
NOTE 1: Value = 340.5KΩ for MCP73826-4.1
Value = 352.5KΩ for MCP73826-4.2
DS21705A-page 2 2002 Microchip Technology Inc.
MCP73826
1.0 ELECTRICAL
PIN FUNCTION TABLE
CHARACTERISTICS
Pin Name Description
1.1 Maximum Ratings*
VIN ................................................................................... -0.3V to 6.0V
All inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)V
Current at V
Maximum Junction Temperature, T
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins..................................................≥ 4kV
*Notice: Stresses above those listed under “Maximum Ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
.......................................................... +/-1 mA
DRV
.............................. 150°C
J
1 SHDN Logic Shutdown
2 GND Battery Management
0V Reference
3
4V
5V
V
BAT
DRV
IN
Cell Voltage Monitor Input
Drive Output
Battery Management
Input Supply
6V
SNS
Charge Current Sense Input
DC CHARACTERISTICS: MCP73826-4.1, MCP73826-4.2
Unless otherwise specified, all limits apply for VIN = [V
Typical values are at +25°C. Refer to Figure 1-1 for test circuit.
Parameter Sym Min Typ Max Units Conditions
Supply Voltage V
Supply Current I
Voltage Regulation (Constant Voltage Mode)
Regulated Output Voltage V
Line Regulation ∆V
Load Regulation ∆V
Output Reverse Leakage Current I
External MOSFET Gate Drive
Gate Drive Current I
Gate Drive Minimum Voltage V
Current Regulation (Controlled Current Mode)
Current Sense Gain A
Current Limit Threshold V
Foldback Current Scale Factor K — 0.43 — A/A
Shutdown Input - SHDN
Input High Voltage Level V
Input Low Voltage Level V
Input Leakage Current I
REG
IN
IN
REG
BAT
BAT
LK
DRV
DRV
CS
CS
IH
IL
LK
(typ)+1V], R
4.5
—
—
4.059
4.158
SENSE
—
0.5
260
4.1
4.2
= 500 mΩ, T
5.5 V
15
560
4.141
4.242
= -20°C to +85°C.
A
-10 — 10 mV VIN = 4.5V to 5.5V,
-1 +0.2 1 mV I
—8—µAV
—
0.08
—
—
1
—
—1.6— V
—100— dB∆(V
40 53 75 mV (VIN-V
40 — — %V
——25%V
—— 1 µAV
µA Shutdown, V
Constant Voltage Mode
V
MCP73826-4.1 only
V
MCP73826-4.2 only
I
OUT
OUT
=Floating, V
IN
SHDN
= 75 mA
= 10 mA to 75 mA
mAmASink, CV Mode
Source, CV Mode
SNS-VDRV
) at I
SNS
IN
IN
= 0V to 5.5V
SHDN
= 0V
BAT=VREG
) / ∆V
BAT
OUT
TEMPERATURE SPECIFICATIONS
Unless otherwise specified, all limits apply for VIN = 4.5V-5.5V
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
A
A
A
Thermal Package Resistances
Thermal Resistance, 6-Pin SOT-23A θ
2002 Microchip Technology Inc. DS21705A-page 3
JA
-20 — +85 °C
-40 — +125 °C
-65 — +150 °C
—230— °C/W
4-Layer JC51-7 Standard
Board, Natural Convection
MCP73826
VIN = 5.1V
(MCP73826-4.1)
= 5.2V
V
IN
(MCP73826-4.2)
22 µF
FIGURE 1-1: MCP73826 Test Circuit.
100 k Ω
R
SENSE
5
1
6
V
SNS
V
IN
SHDN
MCP73826
NDS8434
4
V
DRV
V
GND
BAT
I
OUT
V
OUT
3
2
22 µF
DS21705A-page 4 2002 Microchip Technology Inc.
MCP73826
2.0 TYPICAL PERFORMANCE CHARACTERISTICS
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, I
= 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit.
OUT
FIGURE 2-1: Output Voltage vs. Output Current (MCP73826-4.2).
FIGURE 2-2: Output Voltage vs. Input Voltage (MCP73826-4.2).
FIGURE 2-4: Supply Current vs. Output Current.
FIGURE 2-5: Supply Current vs. Input Voltage.
FIGURE 2-3: Output Voltage vs. Input Voltage
(MCP73826-4.2).
2002 Microchip Technology Inc. DS21705A-page 5
FIGURE 2-6: Supply Current vs. Input Voltage.
MCP73826
Note: Unless otherwise indicated, I
FIGURE 2-7: Output Reverse Leakage Current vs. Output Voltage.
= 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit.
OUT
FIGURE 2-10: Supply Current vs. Temperature.
FIGURE 2-8: Output Reverse Leakage Current vs.
Output Voltage.
FIGURE 2-9: Current Limit Foldback.
FIGURE 2-11: Output Voltage vs. Temperature
(MCP73826-4.2).
FIGURE 2-12: Power-Up / Power-Down.
DS21705A-page 6 2002 Microchip Technology Inc.
MCP73826
Note: Unless otherwise indicated, I
FIGURE 2-13: Line Transient Response.
= 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit.
OUT
FIGURE 2-15: Load Transient Response.
FIGURE 2-14: Line Transient Response.
FIGURE 2-16: Load Transient Response.
2002 Microchip Technology Inc. DS21705A-page 7
MCP73826
3.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
Pin Name Description
1 SHDN Logic Shutdown
2 GND Battery Management
0V Reference
3
4V
5V
6V
TABLE 3-1: Pin Function Table.
V
BAT
DRV
IN
SNS
3.1 Logic Shutdown (SHDN)
Input to force charge termination, initiate charge, or initiate recharge.
3.2 Battery Management 0V Reference (GND)
Connect to negative terminal of battery.
Cell Voltage Monitor Input
Drive Output
Battery Management
Input Supply
Charge Current Sense Input
3.4 Drive Output (V
Direct output drive of an external P-channel MOSFET
pass transistor for current and voltage regulation.
DRV
)
3.5 Battery Management Input Supply (VIN)
A supply voltage of 4.5V to 5.5V is recommended.
Bypass to GND with a minimum of 10 µF.
3.6 Charge Current Sense Input (V
Charge current is sensed via the voltage developed
across an external precision sense resistor. The sense
resistor must be placed between the supply voltage
(V
) and the source of the external pass transistor. A
IN
50 mΩ sense resistor produces a fast charge current of
1A, typically.
SNS
)
3.3 Cell Voltage Monitor Input (V
Voltage sense input. Connect to positive terminal of
battery. Bypass to GND with a minimum of 10 µF to
ensure loop stability when the battery is disconnected.
A precision internal resistor divider regulates the final
voltage on this pin to V
REG
.
BAT
)
DS21705A-page 8 2002 Microchip Technology Inc.
MCP73826
4.0 DEVICE OVERVIEW
The MCP73826 is a linear charge management controller. Refer to the functional block diagram on page 2
and the typical application circuit, Figure 6-1.
4.1 Charge Qualification and Preconditioning
Upon insertion of a battery or application of an external
supply, the MCP73826 verifies the state of the SHDN
pin. The SHDN pin must be above the logic high level.
If the SHDN
MCP73826 initiates a charge cycle. If the cell is below
the preconditioning threshold, 2.4V typically, the
MCP73826 preconditions the cell with a scaled back
current. The preconditioning current is set to approximately 43% of the fast charge peak current. The preconditioning safely replenishes deeply depleted cells
and minimizes heat dissipation in the external pass
transistor during the initial charge cycle.
4.2 Controlled Current Regulation - Fast
Preconditioning ends and fast charging begins when
the cell voltage exceeds the preconditioning threshold.
Fast charge utilizes a foldback current scheme based
on the voltage at the V
across an external sense resistor, R
put voltage,
voltage reaches the regulation voltage, V
pin is above the logic high level, the
Charge
input developed by the drop
SNS
. Fast charge continues until the cell
V
BAT
SENSE
, and the out-
REG
.
4.3 Constant Voltage Regulation
When the cell voltage reaches the regulation voltage,
V
, constant voltage regulation begins. The
REG
MCP73826 monitors the cell voltage at the
This input is tied directly to the positive terminal of the
battery. The MCP73826 is offered in two fixed-voltage
versions for battery packs with either coke or graphite
anodes: 4.1V (MCP73826-4.1) and 4.2V
(MCP73826-4.2).
pin.
V
BAT
4.4 Charge Cycle Completion
The charge cycle can be terminated by a host microcontroller after an elapsed time from the start of the
charge cycle. The charge is terminated by pulling the
shutdown pin, SHDN
, to a logic Low level.
2002 Microchip Technology Inc. DS21705A-page 9
MCP73826
5.0 DETAILED DESCRIPTION
Refer to the typical application circuit, Figure 6-1.
5.1 Analog Circuitry
5.1.1 OUTPUT VOLTAGE INPUT (
The MCP73826 monitors the cell voltage at the
pin. This input is tied directly to the positive terminal of
the battery. The MCP73826 is offered in two fixed-voltage versions for single cells with either coke or graphite
anodes: 4.1V (MCP73826-4.1) and 4.2V
(MCP73826-4.2).
5.1.2 GATE DRIVE OUTPUT (V
The MCP73826 controls the gate drive to an external
P-channel MOSFET, Q1. The P-channel MOSFET is
controlled in the linear region, regulating current and
voltage supplied to the cell. The drive output is automatically turned off when the input supply falls below
the voltage sensed on the
5.1.3 SUPPLY VOLTAGE (V
The V
input is the input supply to the MCP73826. The
IN
input.
V
BAT
)
IN
MCP73826 automatically enters a power-down mode if
the voltage on the V
the
pin. This feature prevents draining the battery
V
BAT
pack when the V
input falls below the voltage on
IN
supply is not present.
IN
5.1.4 CURRENT SENSE INPUT (V
Fast charge current regulation is maintained by the
voltage drop developed across an external sense resistor, R
, applied to the V
SENSE
input pin. The follow-
SNS
ing formula calculates the value for R
DRV
SENSE
V
)
SNS
BAT
)
V
BAT
)
:
5.2 Digital Circuitry
5.2.1 SHUTDOWN INPUT (SHDN)
The shutdown input pin, SHDN
nate a charge anytime during the charge cycle, initiate
a charge cycle, or initiate a recharge cycle.
Applying a logic High input signal to the SHDN
tying it to the input source, enables the device. Applying a logic Low input signal disables the device and terminates a charge cycle. In shutdown mode, the
device’s supply current is reduced to 0.5 µA, typically.
, can be used to termi-
pin, or
V
R
SENSE
---------- --=
I
OUT
CS
Where:
V
is the current limit threshold
CS
I
is the desired peak fast charge current in
OUT
amps. The preconditioning current is scaled to
approximately 43% of I
DS21705A-page 10 2002 Microchip Technology Inc.
OUT
.
MCP73826
6.0 APPLICATIONS
The MCP73826 is designed to operate in conjunction
with a host microcontroller or in stand-alone applications. The MCP73826 provides the preferred charge
VOLTAGE
REGULATED
WALL CUBE
MA2Q705
22 kΩ
100 kΩ
10 µF
SHDN
GND
V
BAT
1
MCP73826
2
3
algorithm for Lithium-Ion cells, controlled current followed by constant voltage. Figure 6-1 depicts a typical
stand-alone application circuit and Figure 6-2 depicts
the accompanying charge profile.
Q
1
I
SENSE
NDS8434
R
100 mΩ
V
SNS
6
V
IN
5
V
DRV
4
OUT
10 µF
PA CK+
PACK -
SINGLE CELL
LITHIUM-ION
BATTERY PACK
+
-
FIGURE 6-1: Typical Application Circuit.
PRECONDITIONING
PHASE
REGULATION
VOLTAGE
(V
)
REG
REGULATION
CURRENT
(I
)
)
OUT(PEAK
TRANSITION
THRESHOLD
PRECONDITION
CURRENT
FIGURE 6-2: Typical Charge Profile.
CONTROLLED CURRENT
CHARGE
VOLTAGE
PHASE
CHARGE
CURRENT
CONSTANT VOLTAGE
PHASE
2002 Microchip Technology Inc. DS21705A-page 11
MCP73826
6.1 Application Circuit Design
Due to the low efficiency of linear charging, the most
important factors are thermal design and cost, which
are a direct function of the input voltage, output current
and thermal impedance between the external P-channel pass transistor, Q1, and the ambient cooling air.
The worst-case situation is when the output is shorted.
In this situation, the P-channel pass transistor has to
dissipate the maximum power. A trade-off must be
made between the charge current, cost and thermal
requirements of the charger.
6.1.1 COMPONENT SELECTION
Selection of the external components in Figure 6-1 is
crucial to the integrity and reliability of the charging system. The following discussion is intended as a guide for
the component selection process.
6.1.1.1 SENSE RESISTOR
The preferred fast charge current for Lithium-Ion cells
is at the 1C rate with an absolute maximum current at
the 2C rate. For example, a 500 mAH battery pack has
a preferred fast charge current of 500 mA. Charging at
this rate provides the shortest charge cycle times without degradation to the battery pack performance or life.
The current sense resistor, R
, is calculated by:
SENSE
6.1.1.2 EXTERNAL PASS TRANSISTOR
The external P-channel MOSFET is determined by the
gate to source threshold voltage, input voltage, output
voltage, and peak fast charge current. The selected Pchannel MOSFET must satisfy the thermal and electrical design requirements.
Thermal Considerations
The worst case power dissipation in the external pass
transistor occurs when the input voltage is at the maximum and the output is shorted. In this case, the power
dissipation is:
PowerDissipation V
INMAXIOUT
K××=
Where:
V
is the maximum input voltage
INMAX
I
is the maximum peak fast charge current
OUT
K is the foldback current scale factor
Power dissipation with a 5V, +/-10% input voltage
source, 100 mΩ, 1% sense resistor, and a scale factor
of 0.43 is:
PowerDissipation 5.5V 758mA× 0.43× 1.8W==
V
R
SENSE
---------- --=
I
OUT
CS
Where:
V
is the current limit threshold voltage
CS
is the desired peak fast charge current
I
OUT
For the 500 mAH battery pack example, a standard
value 100 mΩ, 1% resistor provides a typical peak fast
charge current of 530 mA and a maximum peak fast
charge current of 758 mA. Worst case power dissipation in the sense resistor is:
PowerDissipation 100mΩ 758mA
× 57.5m W==
2
A Panasonic ERJ-L1WKF100U 100 mΩ, 1%, 1 W
resistor is more than sufficient for this application.
A larger value sense resistor will decrease the peak
fast charge current and power dissipation in both the
sense resistor and external pass transistor, but will
increase charge cycle times. Design trade-offs must be
considered to minimize space while maintaining the
desired performance.
Utilizing a Fairchild NDS8434 or an International Rectifier IRF7404 mounted on a 1in
2
pad of 2 oz. copper, the
junction temperature rise is 90°C, approximately. This
would allow for a maximum operating ambient temperature of 60°C.
By increasing the size of the copper pad, a higher
ambient temperature can be realized or a lower value
sense resistor could be utilized.
Alternatively, different package options can be utilized
for more or less power dissipation. Again, design tradeoffs should be considered to minimize size while maintaining the desired performance.
Electrical Considerations
The gate to source threshold voltage and R
DSON
of the
external P-channel MOSFET must be considered in the
design phase.
The worst case, V
provided by the controller occurs
GS
when the input voltage is at the minimum and the
charge current is at the maximum. The worst case, V
GS
is:
V
GSVDRVMAXVINMINIOUTRSENSE
×)–(–=
Where:
V
DRVMAX
is the maximum sink voltage at the V
DRV
output
DS21705A-page 12 2002 Microchip Technology Inc.
MCP73826
V
is the minimum input voltage source
INMIN
is the maximum peak fast charge current
I
OUT
R
Worst case, V
is the sense resistor
SENSE
with a 5V, +/-10% input voltage
GS
source, 100 mΩ, 1% sense resistor, and a maximum
sink voltage of 1.6V is:
V
1.6V 4.5V 758mA 99m Ω×–()– 2.8– V==
GS
At this worst case, V
GS
, the R
of the MOSFET
DSON
must be low enough as to not impede the performance
of the charging system. The maximum allowable
R
at the worst case VGS is:
DSON
R
DSON
V
R
DSON
INMINIOUTRSENSE
----------- ------------- ------------- ------------- ------------ ------------- ------------- ---=
4.5V 758mA 99mΩ×– 4.242V–
---------- ------------- ------------- ------------ ------------- ------------- ------ 242 mΩ==
758mA
×– V
I
OUT
–
BATMAX
The Fairchild NDS8434 and International Rectifier
IRF7404 both satisfy these requirements.
6.1.1.3 EXTERNAL CAPACITORS
The MCP73826 is stable with or without a battery load.
In order to maintain good AC stability in the constant
voltage mode, a minimum capacitance of 10 µF is recommended to bypass the
pin to GND. This capac-
V
BAT
itance provides compensation when there is no battery
load. In addition, the battery and interconnections
appear inductive at high frequencies. These elements
are in the control feedback loop during constant voltage
mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the
battery pack.
Virtually any good quality output filter capacitor can be
used, independent of the capacitor’s minimum ESR
(Effective Series Resistance) value. The actual value of
the capacitor and its associated ESR depends on the
forward trans conductance, g
, and capacitance of the
m
external pass transistor. A 10 µF tantalum or aluminum
electrolytic capacitor at the output is usually sufficient
to ensure stability for up to a 1 A output current.
If a reverse protection diode is incorporated in the
design, it should be chosen to handle the peak fast
charge current continuously at the maximum ambient
temperature. In addition, the reverse leakage current of
the diode should be kept as small as possible.
6.1.1.5 SHUTDOWN INTERFACE
In the stand-alone configuration, the shutdown pin is
generally tied to the input voltage. The MCP73826 will
automatically enter a low power mode when the input
voltage is less than the output voltage reducing the battery drain current to 8 µA, typically.
By connecting the shutdown pin as depicted in
Figure 6-1, the battery drain current may be further
reduced. In this application, the battery drain current
becomes a function of the reverse leakage current of
the reverse protection diode.
6.2 PCB Layout Issues
For optimum voltage regulation, place the battery pack
as close as possible to the device’s
It is recommended to minimize voltage drops along the
high current carrying PCB traces.
If the PCB layout is used as a heatsink, adding many
vias around the external pass transistor can help conduct more heat to the back-plane of the PCB, thus
reducing the maximum junction temperature.
and GND pins.
V
BAT
6.1.1.4 REVERSE BLOCKING PROTECTION
The optional reverse blocking protection diode
depicted in Figure 6-1 provides protection from a
faulted or shorted input or from a reversed polarity input
source. Without the protection diode, a faulted or
shorted input would discharge the battery pack through
the body diode of the external pass transistor.
2002 Microchip Technology Inc. DS21705A-page 13
MCP73826
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
6-Pin SOT-23A (EIAJ SC-74) Device
Part Number Code
MCP73826-4.1VCH CN
MCP73826-4.2VCH CP
2
cdef
5
13
64
Legend: 1 Part Number code + temperature range and voltage (two letter code)
2 Part Number code + temperature range and voltage (two letter code)
3 Year and 2-month period code
4 Lot ID number
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
DS21705A-page 14 2002 Microchip Technology Inc.
7.2 Package Dimensions
Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices
Device
Marking
MCP73826
User Direction of Feed
W
PIN 1
Standard Reel Component Orientation
for TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size:
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
6-Pin SOT-23A 8 mm 4 mm 3000 7 in.
.075 (1.90)
REF.
.122 (3.10)
.098 (2.50)
.020 (0.50)
.014 (0.35)
.037 (0.95)
P
.069 (1.75)
.059 (1.50)
REF.
.118 (3.00)
.010 (2.80)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
2002 Microchip Technology Inc. DS21705A-page 15
10° MAX.
.024 (0.60)
.004 (0.10)
.008 (0.20)
.004 (0.09)
MCP73826
NOTES:
DS21705A-page 16 2002 Microchip Technology Inc.
MCP73826
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The Systems Information and Upgrade Line provides
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013001
2002 Microchip Technology Inc. DS21705A-page 17
MCP73826
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this Data Sheet.
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Telephone: (_______) _________ - _________
MCP73826
Literature Number:
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DS21705A
4. What additions to the data sheet do you think would enhance the structure and subject?
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DS21705A-page 18 2002 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. -X.X XXXX
Device
Vo lt ag e
Device: MCP73826: Linear Charge Management Controller
X
Tem per atu re
Range
Examples:
PackageOutput
a) MCP73826-4.1VCHTR: Linear Charge Man-
agement Controller, 4.1V, Tape and Reel.
b) MCP73826-4.2VCHTR: Linear Charge Man-
agement Controller, 4.2V, Tape and Reel.
MCP73826
Output Voltage: = 4.1V
Temperature Range: V = -20°C to +85°C
Package: CHTR = SOT-23, 6-lead (Tape and Reel)
=4.2V
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
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Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
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2002 Microchip Technology Inc. DS21705A-page19
MCP73826
NOTES:
DS21705A-page 20 2002 Microchip Technology Inc.
NOTES:
MCP73826
2002 Microchip Technology Inc. DS21705A-page21
MCP73826
NOTES:
DS21705A-page 22 2002 Microchip Technology Inc.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
K
EELOQ
, MPLAB, PIC, PICmicro, PICMASTER, PICSTART,
PRO MATE, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microID,
microPort, Migratable Memory, MPASM, MPLIB, MPLINK,
MPSIM, MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Term Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999 . The
Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro
devices, Serial EEPROMs and microperipheral
products. In addition, Microchip’s quality
system for the design and manufacture of
development systems is ISO 9001 certified.
®
8-bit MCUs, KEEL
®
code hopping
OQ
2002 Microchip Technology Inc. DS21705A - page 23
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01/18/02
*DS21705A*
DS21705A-page 24 2002 Microchip Technology Inc.
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