MICROCHIP MCP6546, MCP6546R, MCP6546U, MCP6547, MCP6548 Technical data

...
MCP6546/6R/6U/7/8/9
Open-Drain Output Sub-Microamp Comparators
Features
• Low Quiescent Current: 600 nA/comparator (typ.)
• Rail-to-Rail Input: V
• Open-Drain Output: V
- 0.3V to V
SS
OUT
10V
DD
• Propagation Delay: 4 µs (typ., 100 mV Overdrive)
• Wide Supply Voltage Range: 1.6V to 5.5V
• Single available in SOT-23-5, SC-70-5 * packages
• Available in Single, Dual and Quad
• Chip Select (CS
) with MCP6548
• Low Switching Current
• Internal Hysteresis: 3.3 mV (typ.)
• Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Typical Applications
• Laptop Computers
• Mobile Phones
• Metering Systems
• Hand-held Electronics
• RC Timers
• Alarm and Monitoring Circuits
• Windowed Comparators
• Multi-vibrators
Description
The Microchip Technology Inc. MCP6546/7/8/9 family of comparators is offered in single (MCP6546, MCP6546R, MCP6546U), single with chip select (MCP6548), dual (MCP6547) and quad (MCP6549) configurations. The outputs are open-drain and are capable of driving heavy DC or capacitive loads.
These comparators are optimized for low power, single-supply application with greater than rail-to-rail input operation. The output limits supply current surges and dynamic power consumption while switching. The open-drain output of the MCP6546/7/8/9 family can be used as a level-shifter for up to 10V using a pull-up resistor. It can also be used as a wired-OR logic. The internal Input hysteresis eliminates output switching due to internal noise voltage, reducing current draw. These comparators operate with a single-supply voltage as low as 1.6V and draw a quiescent current of less than 1 µA/comparator.
The related MCP6541/2/3/4 family of comparators from Microchip has a push-pull output that supports rail-to­rail output swing and interfaces with CMOS/TTL logic.
* SC-70-5 E-Temp parts not avaliable at this release
the data sheet
.
MCP6546U SOT-23-5 is E-Temp only.
of
Related Devices
• CMOS/TTL-Compatible Output: MCP6541/2/3/4
Package Types
MCP6546
PDIP, SOIC, MSOP
1
NC
V
IN
VIN+
V
SS
2
­+
3 4
8 7 6 5
NC
V
DD
OUT NC
OUT
V
MCP6546
SOT-23-5, SC-70-5
V
OUT
1
V
2
SS
V
+
3
IN
© 2006 Microchip Technology Inc. DS21714E-page 1
5
+
-
4
DD
VIN–
VIN–
V
MCP6546R MCP6547
SOT-23-5
OUTA
1
V
DD
+
IN
+
2
3
V
5
SS
V
-
4
VIN–
INA
V
INA
V
MCP6546U
SOT-23-5
1
V
SS
+
IN
­+
2
3
V
5
DD
V
OUT
4
V
V
PDIP, SOIC, MSOP
SS
1
-
2
+
3 4
8
+
7
+
-
6 5
MCP6548
PDIP, SOIC, MSOP
NC
IN
IN
SS
1 2
­+
+
3 4
8 7 6 5
V
DD
OUTB V
INB
V
INB
CS V
DD
OUT NC
– +
OUTA
V
INA
V
INA
V
V
INB
V
INB
OUTB
MCP6549
PDIP, SOIC, TSSOP
14
+
13
+
-
12
11
10
-
+
+
9
8
DD
1
2
-
3
+
4
+
5
-
6
7
OUTD
V
IND
V
IND
V
SS
V
INC
V
INC
OUTC
+
+
MCP6546/6R/6U/7/8/9

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †
VDD - VSS.........................................................................7.0V
Open-Drain output............................................... V
Analog Input (V
All other inputs and outputs ........... V
+, VIN-)††............. VSS - 1.0V to VDD + 1.0V
IN
– 0.3V to VDD + 0.3V
SS
Difference Input voltage ...................................... |V
+ 10.5V
SS
DD
– VSS|
† Notice: Stresses above those listed under “Absolute Maxi­mum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
†† See Section 4.1.2 “Input Voltage and Current
Limits”
Output Short-Circuit Current .................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature (T
) .......................... +150°C
J
ESD protection on all pins:
(HBM;MM) .....................................2 kV;200V (MCP6546U)
(HBM;MM) ................................ 4 kV; 200V (all other parts)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = 25°C, VIN+ = VDD/2, VIN– = VSS,
R
=2.74kΩ to VPU = VDD (Refer to Figure 1-3).
PU
Parameters Sym Min Typ Max Units Conditions
Power Supply
Supply Voltage V
Quiescent Current (per comparator)
DD
I
Q
Input
Input Voltage Range V
CMRVSS
Common Mode Rejection Ratio CMRR 55 70 dB V
Common Mode Rejection Ratio CMRR 50 65 dB V
Common Mode Rejection Ratio CMRR 55 70 dB V
Power Supply Rejection Ratio PSRR 63 80 dB V
Input Offset Voltage V
Drift with Temperature ΔV
Input Hysteresis Voltage V
Linear Temp. Co. TC
Quadratic Temp. Co. TC
Input Bias Current I
At Temperature (I-Temp parts) I
At Temperature (E-Temp parts) I
Input Offset Current I
Common Mode Input Impedance Z
Differential Input Impedance Z
OS
OS
HYST
B
B
B
OS
CM
DIFF
/ΔT
1
2
Note 1: The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
2: V
at differential temperatures is estimated using: V
HYST
3: Input bias current at temperature is not tested for the SC-70-5 package 4: Do not short the output above V
V
test limit was VDD before Dec. 2004 (week code 52).
PU
1.6 5.5 V VPU V
0.3 0.6 1 µA I
0.3 V
+ 0.3 V
DD
-7.0 ±1.5 +7.0 mV VCM = V
±3 µV/°C TA = -40°C to +125°C, VCM = V
A
1.5 3.3 6.5 mV VCM = V
—6.7 —µV/°CT
-0.035 µV/°C2TA = -40°C to +125°C, VCM = V
—1 —pAV
25 100 pA TA = +85°C, VCM = V
1200 5000 pA TA = +125°C, VCM = V — ±1 pA V
DD
= 0
OUT
= 5V, VCM = -0.3V to 5.3V
DD
= 5V, VCM = 2.5V to 5.3V
DD
= 5V, VCM = -0.3V to 2.5V
DD
= V
CM
SS
(Note 1)
SS
SS
(Note 1)
SS
= -40°C to +125°C, VCM = VSS (Note 2)
A
(Note 2)
SS
CM = VSS
(Note 3)
SS
(Note 3)
SS
CM = VSS
—1013||4 Ω||pF
—1013||2 Ω||pF
(TA) = V
HYST
+ 10V. Limit the output current to Absolute Maximum Rating of 30 mA. The minimum
SS
+ (TA -25°C) TC1 + (TA - 25°C)2TC2.
HYST
DS21714E-page 2 © 2006 Microchip Technology Inc.
MCP6546/6R/6U/7/8/9
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = 25°C, VIN+ = VDD/2, VIN– = VSS,
R
=2.74kΩ to VPU = VDD (Refer to Figure 1-3).
PU
Parameters Sym Min Typ Max Units Conditions
Open-Drain Output
Output Pull-Up Voltage V
High-Level Output Current I
Low-Level Output Voltage V
Short-Circuit Current I
Output Pin Capacitance C
OH
I
SC
OUT
PU
OL
SC
Note 1: The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
2: V
at differential temperatures is estimated using: V
HYST
3: Input bias current at temperature is not tested for the SC-70-5 package 4: Do not short the output above V
V
test limit was VDD before Dec. 2004 (week code 52).
PU
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
Step = 200 mV, Overdrive = 100 mV, R
Parameters Sym Min Typ Max Units Conditions
Fall Time t
Propagation Delay (High-to-Low) t
Propagation Delay (Low-to-High) t
Propagation Delay Skew t
Maximum Toggle Frequency f
Input Noise Voltage E
Note 1: t
and t
R
depend on the load (RL and CL); these specifications are valid for the indicated load only.
PLH
2: Propagation Delay Skew is defined as: t
=2.74kΩ to VPU = VDD, and CL = 36 pF (Refer to Figure 1-2 and Figure 1-3).
PU
F
PHL
PLH
PDS
MAX
f
MAX
ni
1.6 10 V (Note 4)
-100 nA VDD = 1.6V to 5.5V, VPU = 10V (Note 4)
V
SS
—V
SS
+ 0.2 V I
= 2 mA, VPU = VDD = 5V
OUT
—±1.5 — mAVPU = VDD = 1.6V (Note 4)
–30—mAV
= VDD = 5.5V (Note 4)
PU
—8 —pF
(TA) = V
HYST
+ 10V. Limit the output current to Absolute Maximum Rating of 30 mA. The minimum
SS
= +1.6V to +5.5V, VSS = GND, TA = 25°C, VIN+ = VDD/2,
DD
+ (TA -25°C) TC1 + (TA - 25°C)2TC2.
HYST
—0.7—µs(Note 1)
—4.08.s
—3.08.s(Note 1)
—-1.0— µs(Notes 1 and 2)
225 kHz VDD = 1.6V
165 kHz VDD = 5.5V
200 µV
= t
- t
PDS
PLH
PHL
.
10 Hz to 100 kHz
P-P
MCP6548 CHIP SELECT (CS) CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = 25°C, VIN+ = VDD/2, VIN– = VSS,
R
=2.74kΩ to VPU = VDD, and CL = 36 pF (Refer to Figures 1-1 and 1-3).
PU
Parameters Sym Min Typ Max Units Conditions
CS Low Specifications
Logic Threshold, Low V
CS
CS
Input Current, Low I
IL
CSL
CS High Specifications
Logic Threshold, High V
CS
CS
Input Current, High I
CS Input High, VDD Current I
CS Input High, GND Current I
Comparator Output Leakage I
Dynamic Specifications
CS
Low to Comparator Output Low
CS Turn-on Time
CS High to Comparator Output High Z Turn-off Time
CS Hysteresis V
IH
CSH
DD
SS
O(LEAK)
t
ON
t
OFF
CS_HYST
© 2006 Microchip Technology Inc. DS21714E-page 3
V
SS
—5—pACS = V
0.8 V
—1—pACS = V
—18—pACS = V
—-20—pACS = V
—1—pAV
0.2 V
—VDDV
DD
DD
V
SS
DD
DD
DD
= VSS+10V, CS = V
OUT
—250msCS = 0.2VDD to V
V
– = V
IN
DD
—10—µsCS = 0.8VDD to V
V
– = V
IN
DD
—0.6— VVDD = 5V
OUT
OUT
DD
= VDD/2,
= VDD/2,
MCP6546/6R/6U/7/8/9
V
t
IL
ON
CS
V
High-Z
OUT
I
-20 pA (typ.)
SS
I
1 pA (typ.) 1 pA (typ.)5 pA (typ.)
CS
FIGURE 1-1: Timing Diagram for the CS
V
IH
t
OFF
High-Z
-20 pA (typ.)-0.6 µA (typ.)
VIN–
VIN+ = VDD/2
V
OUT
100 mV
100 mV
t
PLH
V
OL
t
PHL
V
OH
V

FIGURE 1-2: Propagation Delay Timing Diagram.

pin on the MCP6548.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
A
A
A
Thermal Package Resistances
Thermal Resistance, 5L-SC-70 θ Thermal Resistance, 5L-SOT-23 θ Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ Thermal Resistance, 8L-MSOP θ Thermal Resistance, 14L-PDIP θ Thermal Resistance, 14L-SOIC θ Thermal Resistance, 14L-TSSOP θ
JA
JA
JA
JA
JA
JA
JA
JA
Note: The MCP6546/7/8/9 I-temp family operates over this extended temperature range, but with reduced
performance. In any case, the Junction Temperature (T specification of +150°C.
-40 +85 °C
-40 +125 °C Note
-65 +150 °C
331 °C/W
256 °C/W
—85—°C/W
163 °C/W
206 °C/W
—70—°C/W
120 °C/W
100 °C/W
) must not exceed the absolute maximum
J
OL

1.1 Test Circuit Configuration

This test circuit configuration is used to determine the AC and DC specifications.
V
DD
= V
V
PU
DD
200 kΩ
MCP654X
200 kΩ
100 kΩ
VIN = V
SS
VSS = 0V

FIGURE 1-3: AC and DC Test Circuit for the Open-Drain Output Comparators.

DS21714E-page 4 © 2006 Microchip Technology Inc.
R
=
PU
(2 mA)/ V
36 pF
V
DD
OUT
MCP6546/6R/6U/7/8/9
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, R
= 2.74 kΩ to VPU=VDD, and CL = 36 pF.
PU
14%
1200 Samples
Percentage of Occurrences
12%
10%
8%
6%
4%
2%
0%
= V
V
CM
SS
-7-6-5-4-3-2-101234567
Input Offset Voltage (mV)
FIGURE 2-1: Input Offset Voltage at V
CM=VSS
Percentage of Occurrences
.
16%
1200 Samples
14%
12%
10%
8%
6%
4%
2%
0%
= V
V
CM
TA = -40°C to +125°C
-14
-12
SS
-8-6-4
-10 Input Offset Voltage Drift (µV/°C)
02468
-2
101214
18%
1200 Samples
16%
V
= V
CM
SS
1.62.02.42.83.23.64.04.44.85.25.66.0
Input Hysteresis Voltage (mV)
Percentage of Occurrences
14%
12%
10%
8%
6%
4%
2%
0%
FIGURE 2-4: Input Hysteresis Voltage at V
CM=VSS
Percentage of Occurrences
25%
20%
15%
10%
5%
0%
.
4.6
5.0
5.4
Input Hysteresis Voltage –
Linear Temp. Co.; TC
5.8
6.2
TA = -40°C to +125°C
6.6
7.0
7.4
7.8
(µV/°C)
1
596 Samples
= V
V
CM
VDD = 1.6VVDD = 5.5V
8.2
8.6
9.0
SS
9.4
FIGURE 2-2: Input Offset Voltage Drift at V
CM=VSS
Inverting Input, Output
.
7
VDD = 5.5V
6
5
4
3
2
Voltage (V)
1
0
-1
012345678910
V
OUT
VIN–
Time (1 ms/div)

FIGURE 2-3: The MCP6546/6R/6U/7/8/9 comparators show no phase reversal.

FIGURE 2-5: Input Hysteresis Voltage Linear Temp. Co. (TC
20%
596 Samples
18%
V
= V
CM
SS
TA = -40°C to +125°C
VDD = 1.6V
-0.060
-0.056
Quadratic Temp. Co.; TC
Percentage of Occurrences
16% 14% 12% 10%
8% 6% 4% 2% 0%
) at VCM=VSS.
1
-0.052
-0.048
-0.044
-0.040
-0.036
Input Hysteresis Voltage –
-0.032
(µV/°C2)
2
VDD = 5.5V
-0.028
-0.024
-0.020
FIGURE 2-6: Input Hysteresis Voltage Quadratic Temp. Co. (TC
) at VCM=VSS.
2
-0.016
© 2006 Microchip Technology Inc. DS21714E-page 5
MCP6546/6R/6U/7/8/9
Note: Unless otherwise indicated, VDD= +1.6V to +5.5V, VSS= GND, TA= +25°C, VIN+=VDD/2, VIN– = GND,
RPU=2.74kΩ to VPU=VDD, and CL=36pF.
1.0 VCM = V
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
Input Offset Voltage (mV)
-1.0
-50 -25 0 25 50 75 100 125
SS
VDD = 1.6V
VDD = 5.5V
Ambient Temperature (°C)
FIGURE 2-7: Input Offset Voltage vs. Ambient Temperature at V
2.0 VDD = 1.6V
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
Input Offset Voltage (mV)
-2.0
TA = +125°C
0.0
0.2
0.4
-0.4
-0.2
Common Mode Input Voltage (V)
0.6
CM=VSS
0.8
1.0
.
TA = +125°C T
= +85°C
A
T
= +25°C
A
T
= -40°C
A
1.2
1.4
1.6
1.8
6.5 VCM = V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
Input Hysteresis Voltage (mV)
-50-250 255075100125
SS
VDD = 1.6V
VDD = 5.5V
Ambient Temperature (°C)
FIGURE 2-10: Input Hysteresis Voltage vs. Ambient Temperature at V
6.5 VDD = 1.6V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
Input Hysteresis Voltage (mV)
2.0
TA = +125°C
0.0
-0.4
0.2
-0.2
Common Mode Input Voltage (V)
0.4
CM=VSS
0.6
0.8
.
TA = +125°C T
= +85°C
A
TA = +25°C T
= -40°C
A
1.0
1.2
1.4
1.6
1.8
2.0
FIGURE 2-8: Input Offset Voltage vs. Common Mode Input Voltage at V
2.0 VDD = 5.5V
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
Input Offset Voltage (mV)
-2.0
0.0
0.5
1.0
1.5
-0.5
Common Mode Input Voltage (V)
2.0
2.5
TA = -40°C
T
TA = +85°C
T
A
3.0
DD
= +25°C
A
= +125°C
3.5
4.0
=1.6V.
4.5
5.0
FIGURE 2-9: Input Offset Voltage vs. Common Mode Input Voltage at V
= 5.5V.
DD
FIGURE 2-11: Input Hysteresis Voltage vs.
3.5
DD
4.0
=1.6V.
4.5
5.0
5.5
6.0
Common Mode Input Voltage at V
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
Input Hysteresis Voltage (mV)
5.5
6.0
VDD = 5.5V TA = +125°C
0.0
0.5
1.0
-0.5
1.5
Common Mode Input Voltage (V)
T T T
2.0
2.5
3.0
= +85°C
A
= +25°C
A
= -40°C
A
FIGURE 2-12: Input Hysteresis Voltage vs. Common Mode Input Voltage at V
DD
=5.5V.
DS21714E-page 6 © 2006 Microchip Technology Inc.
MCP6546/6R/6U/7/8/9
Note: Unless otherwise indicated, VDD= +1.6V to +5.5V, VSS= GND, TA= +25°C, VIN+=VDD/2, VIN– = GND,
RPU=2.74kΩ to VPU=VDD, and CL=36pF.
10n
90
Input Referred
85
80
75
PSRR, VIN+ = VSS, VDD = 1.6V to 5.5V
70
65
CMRR, PSRR (dB)
CMRR, VIN+ = -0.3 to 5.3V, VDD = 5.0V
60
55
-50 -25 0 25 50 75 100 125 Ambient Temperature (°C)
10000
1n
1000
100p
100
(A)
10p
10
1
1p
Input Bias, Offset Currents
100f
0.1
0.00.51.01.52.02.53.03.54.04.55.05.5
IB, TA = +125°C
IB, TA = +85°C
IOS, TA = +125°C
IOS, TA = +85°C
Common Mode Input Voltage (V)
VDD = 5.5V

FIGURE 2-13: CMRR,PSRR vs. Ambient Temperature.

1000
VDD = 5.5V V
= V
CM
100
10
(pA)
1
Input Bias, Offset Currents
0.1
55 65 75 85 95 105 115 125
DD
I
B
Ambient Temperature (°C)
| IOS |

FIGURE 2-14: Input Bias Current, Input Offset Current vs. Ambient Temperature.

0.8 IQ does not include pull-up resistor current
0.7 VDD = 1.6V
0.6
0.5
0.4
0.3
0.2
Quiescent Current
Sweep VIN+, VIN– = VDD/2
per Comparator (µA)
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Common Mode Input Voltage (V)
Sweep VIN–, VIN+ = VDD/2

FIGURE 2-16: Input Bias Current, Input Offset Current vs. Common Mode Input Voltage.

0.7
0.6
0.5
0.4
0.3
0.2
Quiescent Current
per Comparator (µA)
0.1
0.0
0.00.51.01.52.02.53.03.54.04.55.05.5
TA = +125°C
T
= +85°C
A
T
= +25°C
A
T
= -40°C
A
Power Supply Voltage (V)

FIGURE 2-17: Quiescent Current vs. Power Supply Voltage.

0.8 IQ does not include pull-up resistor current
0.7 VDD = 5.5V
0.6
0.5
0.4
0.3
0.2
Quiescent Current
Sweep VIN+, VIN– = VDD/2
per Comparator (µA)
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
Sweep VIN–, VIN+ = VDD/2
FIGURE 2-15: Quiescent Current vs. Common Mode Input Voltage at V
DD
=1.6V.
FIGURE 2-18: Quiescent Current vs. Common Mode Input Voltage at VDD=5.5V.
© 2006 Microchip Technology Inc. DS21714E-page 7
MCP6546/6R/6U/7/8/9
Note: Unless otherwise indicated, VDD= +1.6V to +5.5V, VSS= GND, TA= +25°C, VIN+=VDD/2, VIN– = GND,
RPU=2.74kΩ to VPU=VDD, and CL=36pF.
10
Supply Current
per Comparator (µA)
0.1
IDD spike near VPU = 1.3V
1
VDD = 1.6V
01234567891011
Pull-Up Voltage, V
VDD = 2.1V V
= 2.6V
DD
V
= 3.6V
DD
V
= 4.6V
DD
V
= 5.6V
DD
(V)
PU
FIGURE 2-19: Supply Current vs. Pull-Up Voltage.
10
100 mV Overdrive
= VDD/2
V
CM
does not include
I
DD
pull-up resistor current
1
Supply Current
per Comparator (µA)
0.1
0.1 1 10 100 Toggle Frequency (kHz)
VDD = 5.5V V
= 1.6V
DD
10
1
Supply Current
per Comparator (µA)
0.1
-4-3-2-10123456789
VDD = 5.6V
= 4.6V
V
DD
V
= 3.6V
DD
= 2.6V
V
DD
Pull-up to Supply Voltage Difference,
V
VDD = 1.6V
= 2.1V
V
DD
– VDD (V)
PU
VPU = 1.6V to 10.5V
FIGURE 2-22: Supply Current vs. Pull-Up to Supply Voltage Difference.
35
30
25
20
15
10
Magnitude (mA)
5
Output Short Circuit Current
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
TA = -40°C
= +25°C
T
A
= +85°C
T
A
= +125°C
T
A
Power Supply Voltage (V)

FIGURE 2-20: Supply Current vs. Toggle Frequency.

0.8 VDD = 1.6V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Output Voltage Headroom (V)
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VOL–VSS: T
= +125°C
A
T
= +85°C
A
T
= +25°C
A
T
= -40°C
A
Output Current (mA)
FIGURE 2-21: Output Voltage Headroom vs. Output Current at V
DD
=1.6V.

FIGURE 2-23: Output Short Circuit Current Magnitude vs. Power Supply Voltage.

1.0 VDD = 5.5V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Output Voltage Headroom (V)
0.0
0 5 10 15 20 25
Output Current (mA)
VOL – VSS: TA = +125°C T
= +85°C
A
T
= +25°C
A
T
= -40°C
A
FIGURE 2-24: Output Voltage Headroom vs. Output Current at VDD=5.5V.
DS21714E-page 8 © 2006 Microchip Technology Inc.
MCP6546/6R/6U/7/8/9
Note: Unless otherwise indicated, VDD= +1.6V to +5.5V, VSS= GND, TA= +25°C, VIN+=VDD/2, VIN– = GND,
RPU=2.74kΩ to VPU=VDD, and CL=36pF.
50% 45% 40% 35% 30% 25% 20% 15% 10%
5%
Percentage of Occurrences
0%
012345678
High-to-Low Propagation Delay (µs)
408 Samples 100 mV Overdrive
= VDD/2
V
CM
VDD = 5.5VVDD = 1.6V

FIGURE 2-25: High-to-Low Propagation Delay.

50% 45%
VDD = 5.5V
40% 35% 30% 25% 20% 15% 10%
5%
Percentage of Occurrences
0%
-2.0
-1.6
-1.2
Propagation Delay Skew (µs)
-0.8
VDD = 1.6V
0.0
-0.4
408 Samples
100 mV Overdrive
V
= VDD/2
CM
0.4
0.8
1.2
1.6
65% 60% 55% 50% 45% 40%
VDD = 1.6V
35% 30% 25% 20% 15% 10%
5%
Percentage of Occurrences
0%
012345678
Low-to-High Propagation Delay (µs)
VDD = 5.5V
408 Samples 100 mV Overdrive
= VDD/2
V
CM

FIGURE 2-28: Low-to-High Propagation Delay.

8
100 mV Overdrive
7
= VDD/2
V
CM
6
5
4
3
2
1
Propagation Delay (µs)
2.0
0
-50 -25 0 25 50 75 100 125
t
PHL
t
PLH
Ambient Temperature (°C)
VDD = 5.5V
VDD = 1.6V

FIGURE 2-26: Propagation Delay Skew.

14
VCM = VDD/2
13 12 11 10
9 8 7 6
10 mV Overdrive
5 4 3 2
Propagation Delay (µs)
1
100 mV Overdrive
0
1.52.02.53.03.54.04.55.05.5
Power Supply Voltage (V)
t
PHL
t
PLH

FIGURE 2-27: Propagation Delay vs. Power Supply Voltage.

FIGURE 2-29: Propagation Delay vs. Ambient Temperature.

100
10
Propagation Delay (µs)
1
1 10 100 1000
VDD = 5.5V
VDD = 1.6V
Input Overdrive (mV)
VCM = VDD/2
t
PHL
t
PLH

FIGURE 2-30: Propagation Delay vs. Input Overdrive.

© 2006 Microchip Technology Inc. DS21714E-page 9
MCP6546/6R/6U/7/8/9
Note: Unless otherwise indicated, VDD= +1.6V to +5.5V, VSS= GND, TA= +25°C, VIN+=VDD/2, VIN– = GND,
RPU=2.74kΩ to VPU=VDD, and CL=36pF.
8
VDD = 1.6V
7
100 mV Overdrive
6
5
4
3
2
1
Propagation Delay (µs)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Common Mode Input Voltage (V)
t
PHL
t
PLH
FIGURE 2-31: Propagation Delay vs. Common Mode Input Voltage at V
8
VIN– = 100 mV Overdrive
7
VCM = VDD/2
6
+ = V
V
IN
5
4
3
2
Propagation Delay (µs)
1
0
0 102030405060708090100
CM
Pull-up Resistor, R
VDD = 5.5V
VDD = 1.6V
PU
(k:)
DD
=1.6V.
t
PLH
t
PHL
8
VDD = 5.5V
7
100 mV Overdrive
6
5
4
3
2
1
Propagation Delay (µs)
0
0.00.51.01.52.02.53.03.54.04.55.05.5
Common Mode Input Voltage (V)
t
PHL
t
PLH
FIGURE 2-34: Propagation Delay vs. Common Mode Input Voltage at VDD=5.5V.
200
100 mV Overdrive
180 160 140 120 100
Propagation Delay (µs)
= VDD/2
V
CM
80
VDD = 5.5V
60 40 20
0
0 102030405060708090
VDD = 1.6V
Load Capacitance (nF)
t
PLH
t
PHL
FIGURE 2-32: Propagation Delay vs. Pull-up Resistor.
8
VIN– = 100 mV Overdrive
7
VCM = VDD/2
6
V
+ = V
IN
5
4
3
2
1
Propagation Delay (µs)
0
CM
VDD = 5.5V
VDD = 1.6V t
01234567891011
Pull-up Voltage (V)
FIGURE 2-33: Propagation Delay vs. Pull-up Voltage.

FIGURE 2-35: Propagation Delay vs. Load Capacitance.

10n
1.E+04
1n
1.E+03
t
PHL
PLH
100p
1.E+02
1.E+01
10p
1.E+00
Output Leakage Current (A)
1.E-01
100f
1p
CS = V
DD
VIN+ = VDD/2 V
– = V
IN
SS
01234567891011
Output Voltage (V)
TA = +125°C
TA = +85°C
TA = +25°C
FIGURE 2-36: Output Leakage Current
=VDD) vs. Output Voltage (MCP6548 only).
(CS
DS21714E-page 10 © 2006 Microchip Technology Inc.
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