• Single available in SOT-23-5, SC-70-5 * packages
• Available in Single, Dual and Quad
• Chip Select (CS
) with MCP6548
• Low Switching Current
• Internal Hysteresis: 3.3 mV (typ.)
• Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Typical Applications
• Laptop Computers
• Mobile Phones
• Metering Systems
• Hand-held Electronics
• RC Timers
• Alarm and Monitoring Circuits
• Windowed Comparators
• Multi-vibrators
Description
The Microchip Technology Inc. MCP6546/7/8/9 family
of comparators is offered in single (MCP6546,
MCP6546R, MCP6546U), single with chip select
(MCP6548), dual (MCP6547) and quad (MCP6549)
configurations. The outputs are open-drain and are
capable of driving heavy DC or capacitive loads.
These comparators are optimized for low power,
single-supply application with greater than rail-to-rail
input operation. The output limits supply current surges
and dynamic power consumption while switching. The
open-drain output of the MCP6546/7/8/9 family can be
used as a level-shifter for up to 10V using a pull-up
resistor. It can also be used as a wired-OR logic. The
internal Input hysteresis eliminates output switching
due to internal noise voltage, reducing current draw.
These comparators operate with a single-supply
voltage as low as 1.6V and draw a quiescent current of
less than 1 µA/comparator.
The related MCP6541/2/3/4 family of comparators from
Microchip has a push-pull output that supports rail-torail output swing and interfaces with CMOS/TTL logic.
* SC-70-5 E-Temp parts not avaliable at this release
Open-Drain output............................................... V
Analog Input (V
All other inputs and outputs ........... V
+, VIN-)††............. VSS - 1.0V to VDD + 1.0V
IN
– 0.3V to VDD + 0.3V
SS
Difference Input voltage ...................................... |V
+ 10.5V
SS
DD
– VSS|
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at those or any other conditions above those indicated
in the operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
†† See Section 4.1.2 “Input Voltage and Current
Limits”
Output Short-Circuit Current .................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage temperature .....................................-65°C to +150°C
Note:The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND,
R
= 2.74 kΩ to VPU=VDD, and CL = 36 pF.
PU
14%
1200 Samples
Percentage of Occurrences
12%
10%
8%
6%
4%
2%
0%
= V
V
CM
SS
-7-6-5-4-3-2-101234567
Input Offset Voltage (mV)
FIGURE 2-1:Input Offset Voltage at
V
CM=VSS
Percentage of Occurrences
.
16%
1200 Samples
14%
12%
10%
8%
6%
4%
2%
0%
= V
V
CM
TA = -40°C to +125°C
-14
-12
SS
-8-6-4
-10
Input Offset Voltage Drift (µV/°C)
02468
-2
101214
18%
1200 Samples
16%
V
= V
CM
SS
1.62.02.42.83.23.64.04.44.85.25.66.0
Input Hysteresis Voltage (mV)
Percentage of Occurrences
14%
12%
10%
8%
6%
4%
2%
0%
FIGURE 2-4:Input Hysteresis Voltage at
V
CM=VSS
Percentage of Occurrences
25%
20%
15%
10%
5%
0%
.
4.6
5.0
5.4
Input Hysteresis Voltage –
Linear Temp. Co.; TC
5.8
6.2
TA = -40°C to +125°C
6.6
7.0
7.4
7.8
(µV/°C)
1
596 Samples
= V
V
CM
VDD = 1.6VVDD = 5.5V
8.2
8.6
9.0
SS
9.4
FIGURE 2-2:Input Offset Voltage Drift at
V
CM=VSS
Inverting Input, Output
.
7
VDD = 5.5V
6
5
4
3
2
Voltage (V)
1
0
-1
012345678910
V
OUT
VIN–
Time (1 ms/div)
FIGURE 2-3:The MCP6546/6R/6U/7/8/9
comparators show no phase reversal.
FIGURE 2-5:Input Hysteresis Voltage
Linear Temp. Co. (TC
20%
596 Samples
18%
V
= V
CM
SS
TA = -40°C to +125°C
VDD = 1.6V
-0.060
-0.056
Quadratic Temp. Co.; TC
Percentage of Occurrences
16%
14%
12%
10%
8%
6%
4%
2%
0%
) at VCM=VSS.
1
-0.052
-0.048
-0.044
-0.040
-0.036
Input Hysteresis Voltage –
-0.032
(µV/°C2)
2
VDD = 5.5V
-0.028
-0.024
-0.020
FIGURE 2-6:Input Hysteresis Voltage
Quadratic Temp. Co. (TC
The comparator non-inverting and inverting inputs are
high-impedance CMOS inputs with low bias currents.
3.2CS Digital Input
This is a CMOS, Schmitt-triggered input that places the
part into a low power mode of operation.
3.3Digital Outputs
The comparator outputs are CMOS, open-drain digital
outputs. They are designed to make level shifting and
wired-OR easy to implement.
3.4Power Supply (VSS and VDD)
The positive power supply pin (VDD) is 1.6V to 5.5V
higher than the negative power supply pin (V
normal operation, the other pins are at voltages
between VSS and VDD, except the output pins which
can be as high as 10V above V
SS
.
Typically, these parts are used in a single (positive)
supply configuration. In this case, V
is connected to
SS
ground and VDD is connected to the supply. VDD will
need a local bypass capacitor (typically 0.01 µF to
0.1 µF) within 2 mm of the V
pin. These can share a
DD
bulk capacitor with nearby analog parts (within
100 mm), but it is not required.
The MCP6546/7/8/9 family of push-pull output
comparators are fabricated on Microchip’s state-of-theart CMOS process. They are suitable for a wide range
of applications requiring very low power consumption.
4.1Comparator Inputs
4.1.1PHASE REVERSAL
The MCP6546/6R/6U/7/8/9 comparator family uses
CMOS transistors at the input. They are designed to
prevent phase inversion when the input pins exceed
the supply voltages. Figure 2-3 shows an input voltage
exceeding both supplies with no resulting phase
inversion.
4.1.2INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
. They also clamp any voltages that go too far
V
SS
above V
allow normal operation, and low enough to bypass ESD
events within the specified limits.
FIGURE 4-1:Simplified Analog Input ESD
Structures.
In order to prevent damage and/or improper operation
of these amplifiers, the circuits they are in must limit the
currents (and voltages) at the V
Absolute Maximum Ratings † at the beginning of
Section 1.0 “Electrical Characteristics”). Figure 4-3
shows the recommended approach to protecting these
inputs. The internal ESD diodes prevent the input pins
(V
IN
the resistors R1 and R2 limit the possible current drawn
out of the input pin. Diodes D
pin (V
When implemented as shown, resistors R1 and R2 also
limit the current through D
; their breakdown voltage is high enough to
DD
Bond
V
DD
Pad
VIN+
V
SS
Bond
Pad
Bond
Pad
Input
Stage
Bond
+ and VIN– pins (see
IN
Pad
VIN–
+ and VIN–) from going too far below ground, and
and D2 prevent the input
+ and VIN–) from going too far above VDD.
IN
1
and D2.
1
MCP6546/6R/6U/7/8/9
V
DD
D
1
V
1
R
1
D
2
V
2
R
2
VSS– (minimum expected V1)
R
≥
1
VSS– (minimum expected V2)
R
≥
2
FIGURE 4-2:Protecting the Analog Inputs.
It is also possible to connect the diodes to the left of the
resistors R1 and R2. In this case, the currents through
the diodes D1 and D2 need to be limited by some other
mechanism. The resistor then serves as in-rush current
limiter; the DC current into the input pins (V
VIN–) should be very small.
A significant amount of current can flow out of the
inputs when the common mode voltage (V
ground (VSS); see Figure 2-42. Applications that are
high impedance may need to limit the useable voltage
range.
4.1.3NORMAL OPERATION
The input stage of this family of devices uses two
differential input stages in parallel: one operates at low
input voltages and the other at high input voltages.
With this topology, the input voltage is 0.3V above V
and 0.3V below VSS. The input offset voltage is
measured at both V
proper operation.
The MCP6546/6R/6U/7/8/9 family has internally-set
hysteresis that is small enough to maintain input offset
accuracy (<7 mV), and large enough to eliminate
output chattering caused by the comparator’s own
input noise voltage (200 µV
this capability.
Figure 4-4 shows an inverting circuit for a single-supply
application using three resistors, besides the pull-up
resistor. The resulting hysteresis diagram is shown in
Figure 4-5.
V
DD
V
IN
V
DD
R
2
R
3
MCP654X
I
RF
R
V
PU
I
PU
F
I
OL
R
PU
V
OUT
The open-drain output is designed to make levelshifting and wired-OR logic easy to implement. The
output can go as high as 10V for 9V battery-powered
applications. The output stage minimizes switching current (shoot-through current from supply-to-supply)
when the output changes state. See Figures 2-15, 2-18
and 2-37 through 2-41, for more information.
4.3 MCP6548 Chip Select (CS)
The MCP6548 is a single comparator with a Chip
Select (CS) pin. When CS is pulled high, the total
current consumption drops to 20 pA (typ.). 1 pA (typ.)
flows through the CS
pin, 1 pA (typ.) flows through the
output pin and 18 pA (typ.) flows through the VDD pin,
as shown in Figure 1-1. When this happens, the
comparator output is put into a high-impedance state.
By pulling CS
low, the comparator is enabled. If the CS
pin is left floating, the comparator will not operate
properly. Figure 1-1 shows the output voltage and
supply current response to a CS
The internal CS
circuitry is designed to minimize
pulse.
glitches when cycling the CS pin. This helps conserve
power, which is especially important in battery-powered
applications.
4.4Externally Set Hysteresis
Greater flexibility in selecting hysteresis, or input trip
points, is achieved by using external resistors.
Input offset voltage (V
(input-referred) low-high and high-low trip points. Input
hysteresis voltage (V
the same trip points. Hysteresis reduces output
chattering when one input is slowly moving past the
other, thus reducing dynamic supply current. It also
helps in systems where it is best not to cycle between
states too frequently (e.g., air conditioner thermostatic
control).
) is the center (average) of the
OS
) is the difference between
HYST
FIGURE 4-4:Inverting circuit with
hysteresis.
V
OUT
V
PU
V
OH
High-to-LowLow-to-High
V
OL
V
SS
V
SS
V
= trip voltage from low to high
TLH
= trip voltage from high to low
V
THL
V
TLHVTHL
V
IN
V
DD
FIGURE 4-5:Hysteresis diagram for the
inverting circuit.
In order to determine the trip voltages (V
for the circuit shown in Figure 4-4, R
simplified to the Thevenin equivalent circuit with
respect to VDD, as shown in Figure 4-6.
Using this simplified circuit, the trip voltage can be
calculated using the following equation:
EQUATION 4-2:
R
V
THL
V
V
TLH
THL
⎛⎞
V
⎜⎟
PU
⎝⎠
V
TLH
= trip voltage from low to high
= trip voltage from high to low
23
---------------------------------------R23RFR
++
V
OL
PU
R
⎛⎞
23
---------------------- -
⎜⎟
R23RF+
⎝⎠
+=
V
+=
V
Figure 2-21 and Figure 2-24 can be used to determine
typical values for V
. This voltage is dependent on the
OL
output current IOL as shown in Figure 4-4. This current
can be determined using the equation below:
RFRPU+
⎛⎞
---------------------------------------
23
⎝⎠
++
R
23RFRPU
R
F
⎛⎞
--------------------- -
23
⎝⎠
R23RF+
EQUATION 4-3:
I
OLIPUIRF
VPUVOL–
⎛⎞
I
--------------------------
OL
⎝⎠
R
VOH can be calculated using the equation below:
PU
+=
V
–
23VOL
⎛⎞
------------------------
+=
⎝⎠
R
+
23RF
4.6Capacitive Loads
Reasonable capacitive loads (e.g., logic gates) have
little impact on propagation delay (see Figure 2-27).
The supply current increases with increasing toggle
frequency (Figure 2-30), especially with higher
capacitive loads.
4.7Battery Life
In order to maximize battery life in portable
applications, use large resistors and small capacitive
loads. Avoid toggling the output more than necessary.
Do not use Chip Select (CS
) too frequently in order to
conserve power. Capacitive loads will draw additional
power at start-up.
4.8PCB Surface Leakage
In applications where low input bias current is critical,
PCB (Printed Circuit Board) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low-humidity conditions, a typical resistance
between nearby traces is 10
would cause 5 pA of current to flow. This is greater
than the MCP6546/6R/6U/7/8/9 family’s bias current at
25°C (1 pA, typ.).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-7.
VIN-V
12
Ω. A 5V difference
+
IN
V
SS
EQUATION 4-4:
R
+
23RF
⎛⎞
--------------------------------------
V
VPUV23–()
OH
As explained in Section 4.1 “Comparator Inputs”, it
is important to keep the non-inverting input below
+0.3V when VPU > VDD.
V
DD
4.5Supply Bypass
With this family of comparators, the power supply pin
for single supply) should have a local bypass
(V
DD
capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good
edge rate performance.
FIGURE 4-7:Example Guard Ring Layout
for Inverting Circuit.
1.Inverting Configuration (Figures 4-4 and 4-7):
a.Connect the guard ring to the non-inverting
input pin (V
to the same reference voltage as the
comparator (e.g., VDD/2 or ground).
b.Connect the inverting pin (V
pad without touching the guard ring.
+). This biases the guard ring
IN
–) to the input
IN
MCP6546/6R/6U/7/8/9
4.9Unused Comparators
An unused amplifier in a quad package (MCP6549)
should be configured as shown in Figure 4-8. This
circuit prevents the output from toggling and causing
crosstalk. It uses the minimum number of components
and draws minimal current (see Figure 2-15 and
Figure 2-18).
¼ MCP6549
V
DD
–
+
FIGURE 4-8:Unused Comparators.
4.10Typical Applications
4.10.1PRECISE COMPARATOR
Some applications require higher DC precision. An
easy way to solve this problem is to use an amplifier
(such as the MCP6041) to gain-up the input signal
before it reaches the comparator. Figure 4-9 shows an
example of this approach.
V
DD
V
REF
MCP6041
V
V
V
IN
R
1
R
2
V
REF
MCP6546
FIGURE 4-9:Precise Inverting
Comparator.
4.10.2WINDOWED COMPARATOR
Figure 4-10 shows one approach to designing a
windowed comparator. The wired-OR connection
produces a high output (logic 1) when the input voltage
is between V
YYear code (last digit of calendar year)
YYYear code (last 2 digits of calendar year)
WWWeek code (week of January 1 is week ‘01’)
NNNAlphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
3
e
*This package is Pb-free. The Pb-free JEDEC designator ()
3
e
can be found on the outer packaging for this package.
Note:In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
8-Lead Plastic Dual In-line (P) – 300 mil Body (PDIP)
Note:For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E1
D
2
n
E
β
eB
Dimension LimitsMINNOMMAXMINNOMMAX
Number of Pins
Pitch
Top to Seating PlaneA.140.155.1703.563.944.32
Molded Package ThicknessA2.115.130.1452.923.303.68
Base to Seating Plane
Shoulder to Shoulder WidthE.300.313.3257.627.948.26
Molded Package WidthE1.240.250.2606.106.356.60
Overall LengthD.360.373.3859.149.469.78
Tip to Seating PlaneL.125.130.1353.183.303.43
Lead Thickness
Upper Lead WidthB1.045.058.0701.141.461.78
Lower Lead WidthB.014.018.0220.360.460.56
Overall Row Spacing§
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
Note:For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E
E1
p
D
2
B
Number of Pins
Pitch
Standoff§
Foot Angle
Lead Thickness
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
14-Lead Plastic Dual In-line (P) – 300 mil Body (PDIP)
Note:For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E1
D
2
n
E
β
eB
Number of Pins
Pitch
Top to Seating PlaneA.140.155.1703.563.944.32
Molded Package Thickness
Base to Seating PlaneA1.0150.38
Shoulder to Shoulder WidthE.300.313.3257.627.948.26
Molded Package WidthE1.240.250.2606.106.356.60
Overall LengthD.740.750.76018.8019.0519.30
Tip to Seating PlaneL.125.130.1353.183.303.43
Lead Thickness
Upper Lead WidthB1.045.058.0701.141.461.78
Lower Lead WidthB.014.018.0220.360.460.56
Overall Row Spacing§
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-005
14-Lead Plastic Small Outline (SL) – Narrow, 150 mil (SOIC)
Note:For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1
45°
c
β
Number of Pins
Pitch
Foot Angle
Lead Thickness
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-065
Note the following details of the code protection feature on Microchip devices:
•Microchip products meet the specification contained in their particular Microchip Data Sheet.
•Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•Microchip is willing to work with the customer who is concerned about the integrity of their code.
•Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, K
EELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active
Thermistor, Mindi, MiWi, MPASM, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its
PICmicro
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.