MICROCHIP MCP616, MCP617, MCP618, MCP619 Technical data

MCP616/7/8/9

2.3V to 5.5V Micropower Bi-CMOS Op Amps

Features

• Low Input Offset Voltage: ±150µV (max.)

• Low Noise: 2.2 µV

(typ., 0.1 Hz to 10 Hz)

P-P

• Rail-to-Rail Output

• Low Input Offset Current: 0.3 nA (typ.)

• Low Quiescent Current: 25 µA (max.)

• Power Sup ply Voltage: 2.3V to 5.5V

• Unity Gain Stable

• Chip Select

(CS) Capability: MCP618

• Industrial Temperature Range: -40°C to +85°C

• No Phase Reversal

• Available in Single, Dual and Quad Packages

Typical Applications

• Battery Power Instruments

• Weight Scales

• Strain Gauges

• Medical Instruments

• Test Equipment

Available Tools

• SPICE Macro Models (at www .m ic rochi p.c om )

•FilterLab® Software (at www.microchip.com)

Input Offset Volt age

14%

598 Samples

Percentage of Occurrences

12%
10%

8%
6%
4%
2%
0%

V

-100

= 5.5V

DD

-80

-60

-40

Input Offset Voltage (µV)

0

20

40

60

-20

80

100

Description

The MCP616/7/8/9 family of operational amplifiers (op
amps) from Microchip Technology Inc. are capable of
precision, low-power, single-supply operation. These
op amps are unity-gain stable, have low input offset
voltage (±150 µV, max.), rail-to-rail output swing and
low input offset current (0.3 nA, typ.). These features
make this family of op amps well suited for battery­powered applications.

The single MCP616, the single MCP618 with Chip
Select (CS) and the dual MCP617 are all available in
standard 8-lead PD IP, SOIC and MSOP pac kages. The
quad MCP619 is offered in standard 14-lead PDIP,
SOIC and TSSOP packages. All devices are fully
specified from -40°C to +85°C, with power supplies
from 2.3V to 5.5V.

Package Types

MCP616

PDIP, SOIC, MSOP
NC

VIN–
VIN+

V

SS

1
2
3
4

8
7
6
5

MCP618

PDIP, SOIC, MSOP

NC
VIN–
VIN+

V

SS

1
2
3
4

8
7
6
5

NC
V
V
NC

CS
V
V
NC

DD
OUT

DD
OUT

V

V
V

V

OUTA

V
V

V
V

V

OUTB

MCP617

PDIP, SOIC, MSOP

OUTA

INA
INA

V

SS

1
2

–

3

+

4

8
7
6
5

MCP619

PDIP, SOIC, TSSOP

INA
INA

V

INB
INB

DD

1
2

–

3

+

4
5

+

6

–

7

14
13
12
11
10

9
8

V
V
V
V

V
V
V
V
V
V
V

DD
OUTB
INB
INB

OUTD
IND
IND
SS
INC
INC
OUTC

–
+

–
+

+
–

© 2005 Microchip Technology Inc. DS21613B-page 1

MCP616/7/8/9

1.0 ELECTRICAL CHARACTERISTICS

† Notice: Stresses above those listed under “Absolute

Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those

Absolute Maximum Ratings †

indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended

VDD–VSS .......................................................................7.0V

All Inputs and Outputs ................... V

Difference Input Voltage ......................................|V

– 0.3V to VDD+0.3V

SS

DD–VSS

|

periods may affect device reliability.

Output Short Circuit Current .................................Continuous

Current at Input Pins ....................................................±2 mA

Current at Output and Supply Pins ............................±30 mA

Storage Temperature ....................................-65°C to +150°C

Maximum Junction Temperature (T

) .........................+150°C

J

ESD protection on all pins (HBM;MM) ...................4 kV; 200V

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD= +2.3V to +5.5V, VSS=GND, TA= 25°C, VCM=VDD/2, V

and R

= 100 kΩ to VDD/2.

L

Parameters Sym Min Typ Max Units Conditions

Input Offset

Input Offset Voltage V
Input Offset Drift with Temperature ΔV

OS

/ΔT

OS

Power Supply Rejection PSRR 86 105 — dB

Input Bias Current and Impeda nc e

Input Bias Current I

At Temperat ure I

At Temperature I
Input Offset Current I
Common Mode Input Impedance Z
Differential Input Impedance Z

B
B
B

OS

CM

DIFF

Common Mode

Common Mode Input Voltage Range V

CMR

Common Mode Rejection Ratio CMRR 80 100 — dB V

Open-Loop Gain

DC Open-Loop Gain (large signal) A

DC Open-Loop Gain (large signal) A

OL

OL

Output

Maximum Output Voltage Swing V

Linear Output Voltage Range V

Output Short Circuit Current I

, V

OL

V

, V

OL

OUT

V

OUT

SC

I

SC

Power Supply

Supply Voltage V
Quiescent Current per Amplifier I

DD

Q

–150 — +150 µV

— ±2.5 — µV/°C TA = -40°C to +85°C

A

-35 -15 -5 nA

-70 -21 — nA TA = -40°C
—-12— nAT

= +85°C

A

— ±0.15 — nA
— 600||4 — MΩ||pF
—3||2—MΩ||pF

V

SS

VDD–0.9 V

= 5.0V,

DD

= 0.0V to 4.1V

V

CM

100 120 — dB RL = 25 kΩ to VDD/2,

= 0.05V to VDD– 0.05V

V

OUT

95 115 — dB RL = 5 kΩ to VDD/2,

= 0.1V to VDD–0.1V

V

OUT

OHVSS

OHVSS

+15 — VDD–20 mV RL = 25 kΩ to VDD/2,

0.5V output overdrive

+45 — VDD–60 mV RL = 5 kΩ to VDD/2,

0.5V output overdrive

VSS+50 — VDD–50 mV RL = 25 kΩ to VDD/2,

A

≥ 100 dB

OL

VSS+ 100 — VDD– 100 mV RL = 5 kΩ to VDD/2,

≥ 95 dB

A

—±7—mAV

OL
DD

= 2.3V

—±17— mAVDD = 5.5V

2.3 — 5.5 V
12 19 25 µA IO = 0

OUT

≈ VDD/2

DS21613B-page 2 © 2005 Microchip Technology Inc.

MCP616/7/8/9

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD= +2.3V to +5.5V, VSS= GND, TA= 25°C, VCM=VDD/2, V

= 100 kΩ to VDD/2 and CL=60pF.

R

L

Parameters Sym Min Typ Max Units Conditions

AC Response

Gain Bandwidth Product GBWP — 190 — kHz
Phase Margin PM — 57 — ° G = +1
Slew Rate SR — 0.08 — V/µs

Noise

Input Noise Voltage E
Input Noise Voltage Density e
Input Noise Current Density i

ni
ni

ni

—2.2— µV
—32—nV/√Hz f = 1 kHz
—70— fA/√Hz f = 1 kHz

MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, V

= 100 kΩ to VDD/2 and CL=60pF.

R

L

Parameters Sym Min Typ Max Units Conditions

CS Low Specifications

CS

Logic Threshold, Low V

CS

Input Current, Low I

CS High Specifications

CS

Logic Threshold, High V

CS

Input Current, High I
GND Current I
Amplifier Output Leakage I

CS Dynamic Specifications

CS

Low to Amplifier Output Turn-on Time t

CS High to Amplifier Output High-Z t

CS Hysteresis V

IL

CSL

IH

CSH

SS

O(LEAK)

ON

OFF

HYST

= +2.3V to +5.5V, VSS=GND, TA= 25°C, VCM=VDD/2, V

DD

V

—0.2VDDV

SS

–1.0 0.01 — µA CS = V

0.8 V

—VDDV

DD

—0.012 µACS = V

-2 -0.05 — µA CS = V
—10—nACS = V

— 9 100 µs CS = 0.2VDD to V

G = +1 V/V, R

—0.1— µsCS = 0.8VDD to V

G = +1 V/V, R

—0.6— VVDD = 5.0V

f = 0.1 Hz to 10 Hz

P-P

SS

DD
DD
DD

= 0.9(VDD/2),

OUT

= 1 kΩ to V

L

= 0.1(VDD/2),

OUT

= 1 kΩ to V

L

OUT

OUT

SS

SS

≈ VDD/2,

≈ VDD/2,

V

t

IL

ON

-19 µA (typ.)

CS

V

High-Z High-Z

OUT

-50 nA (typ.) -50 n A (typ.)

I

SS

I

10 nA (typ.) 10 nA (typ.)

CS

V

IH

t

OFF

FIGURE 1-1: Timing Diagram for the CS Pin on the MCP618.

© 2005 Microchip Technology Inc. DS21613B-page 3

MCP616/7/8/9

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD= +2.3V to +5.5V and VSS= GND.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T

Thermal Package Resistances

Thermal Resistance, 8L-PDIP θ
Thermal Resistance, 8L-SOIC θ
Thermal Resistance, 8L-MSOP θ
Thermal Resistance, 14L-PDIP θ
Thermal Resistance, 14L-SOIC θ
Thermal Resistance, 14L-TSSOP θ
Note 1: The MCP616/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the

Junction Temperature (T

) must not exceed the Absolute Maximum specification of +150°C.

J

-40 — +85 °C

A

-40 — +125 °C Note 1

A

-65 — +150 °C

A

—85 — °C/W

JA

— 163 — °C/W

JA

— 206 — °C/W

JA

—70 — °C/W

JA

— 120 — °C/W

JA

— 100 — °C/W

JA

DS21613B-page 4 © 2005 Microchip Technology Inc.

MCP616/7/8/9

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables p r ov ide d f oll ow in g th is no te a r e a s t ati sti ca l s um ma r y bas ed on a l im ite d n um ber of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, VDD= +2.3V to +5.5V, VSS= GND, TA=25°C, VCM=VDD/2, V

=100kΩ to VDD/2 and CL=60pF.

R

L

14%

598 Samples

12%
10%

Percentage of Occurrences

8%
6%
4%
2%
0%

V

-100

= 5.5V

DD

-80

-60

-40

Input Offset Voltage (µV)

-20

0

20

40

60

80

FIGURE 2-1: Input Offset Voltage at
V

=5.5V.

DD

16%

598 Samples

14%
12%
10%

Percentage of Occurrences

8%
6%
4%
2%
0%

V

-100

= 2.3V

DD

-80

-60

0

-40

-20

Offset Voltage (µV)

20

40

60

100

80

100

20%

598 Samples

18%
16%
14%
12%
10%

Percentage of Occurrences

8%
6%
4%
2%
0%

V

DD

T

A

-10

= 5.5V

= -40°C to +85°C

-8

-6

-4

-2

Input Offset Voltage Drift (µV/°C)

FIGURE 2-4: Input Offset Voltage Drift at
V

=5.5V.

DD

18%

598 Samples

16%
14%
12%
10%

Percentage of Occurrences

8%
6%
4%
2%
0%

V

DD

T

A

-10

= 2.3V

= -40°C to +85°C

-8

-6

-4

Input Offset Voltage Drift (µV/°C)

0

-2

0

OUT

2

2

≈ VDD/2,

4

6

4

6

8

10

8

10

FIGURE 2-2: Input Offset Voltage at

=2.3V.

V

DD

16%

600 Samples

14%
12%
10%

Percentage of Occurrences

8%
6%
4%
2%
0%

V

DD

-22

= 5.5V

-21

-20

-19

-18

Input Bias Current (nA)

-17

-16

-15

-14

-13

-12

FIGURE 2-3: Input Bias Current at

=5.5V.

V

DD

-11

-10

FIGURE 2-5: Input Offset Voltage Drift at

=2.3V.

V

DD

20%

600 Samples

18%
16%
14%
12%
10%

Percentage of Occurrences

8%
6%
4%
2%
0%

V

-0.7

= 5.5V

DD

-0.6

-0.5

-0.4

-0.3

-0.2

Input Offset Current (nA)

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

FIGURE 2-6: Input Offset Current at

=5.5V.

V

DD

© 2005 Microchip Technology Inc. DS21613B-page 5

MCP616/7/8/9

0

0

0

Note: Unless otherwise indicated, VDD= +2.3V to +5.5V, VSS= GND, TA=25°C, VCM=VDD/2, V

=100kΩ to VDD/2 and CL=60pF.

R

L

150

Representative Part

100

50

0

-50

-100

Input Offset Voltage (µV)

-150

-50 -25 0 25 50 75 100

VDD = 5.5V

VDD = 2.3V

Ambient Temperature (°C)

FIGURE 2-7: Input Offset Voltage vs. Ambient Temperature.

24
22
20

VDD = 5.5V
18
16
14
12
10

8

(µA/Amplifier)

6

Quiescent Current

4
2
0

-50-250 25507510

VDD = 2.3V

Ambient Temperature (°C)

FIGURE 2-10: Input Bias, Offset Currents vs. Ambient Temperature.

0

-5

I

-10

-15

-20

Input Bias Current (nA)

-25

-50 -25 0 25 50 75 100

120
115
110
105
100

95
90

CMRR, PSRR (dB)

85
80

-50-250 255075100

Ambient Temperature (°C)

Ambient Temperature (°C)

OS

I

B

PSRR

CMRR

≈ VDD/2,

OUT

VDD = 5.5V

1.0

0.8

0.6

0.4

0.2

0.0

Input Offset Current (nA)

FIGURE 2-8: Quiescent Current vs. Ambient Temperature.

40

RL = 5 k

35
30
25
20

(mV)

15
10

5

Output Voltage Headroom

0

-50-250 25507510

Ω

VDD = 5.5V

VDD = 2.3V

Ambient Temperature (°C)

VDD – V

VOL – V

OH

SS

FIGURE 2-9: Maximum Output Voltage
Swing vs. Ambient Temperature at R

=5kΩ.

L

FIGURE 2-11: CMRR, PSRR vs. Ambient Temperature.

9

RL = 25 kΩ

8
7

VDD = 5.5V

6
5
4

(mV)

3
2
1

VDD = 2.3V

Output Voltage Headroom

0

-50 -25 0 25 50 75 10
Ambient Temperature (°C)

VDD – V

VOL – V

OH

SS

FIGURE 2-12: Maximum Output Voltage
Swing vs. Ambient Temperature at RL=25kΩ.

DS21613B-page 6 © 2005 Microchip Technology Inc.

MCP616/7/8/9

0

0

OSIB

5

Note: Unless otherwise indicated, VDD= +2.3V to +5.5V, VSS= GND, TA=25°C, VCM=VDD/2, V

=100kΩ to VDD/2 and CL=60pF.

R

L

25

I

20

15

(mA)

10

| I

|

SC–

5

Output Short Circuit Current

0

-50-250 25507510

SC+

Ambient Temperature (°C)

VDD = 5.5V

VDD = 2.3V

FIGURE 2-13: Output Short Circuit Current vs. Ambie nt Temperature.

0.10

0.09

Low-to-High Transition

0.08

0.07

0.06

0.05

0.04

0.03

Slew Rate (V/µs)

0.02

0.01

VDD = 5.0V

0.00

-50 -25 0 25 50 75 10

High-to-Low Transition

Ambient Temperature (°C)

FIGURE 2-16: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature.

200
180

GBWP

160
140
120
100

(kHz)

80
60
40

Gain Bandwidth Product

20

0

-50 -25 0 25 50 75 100
Ambient Temperature (°C)

100

VDD = 5.5V

80
60
40
20

Input Offset Voltage (µV)

0

-20

-40

-60

-80

-100

-0.5

TA = +85°C
T

= +25°C

A

T

= -40°C

A

0.0

0.5

1.0

1.5

2.0

Common Mode Input Voltage (V)

2.5

OUT

3.0

≈ VDD/2,

PM

3.5

4.0

4.5

100
90
80
70
60
50
40
30
20
10
0

5.0

Phase Margin (°)

5.5

FIGURE 2-14: Slew Rate vs. Ambient Temperature.

Input Bias Current (nA)

30
25
20
15
10

TA = +85°C

5

T

= +25°C

0

A

T

= -40°C

-5

A

-10

-15

-20

-25

-30

0.0

0.5

1.0

1.5

Common Mode Input Voltage (V)

2.0

2.5

3.0

I

VDD = 5.5V

3.5

4.0

4.5

5.0

0.30

0.25

0.20

0.15

0.10

0.05

0.00

-0.05

-0.10

-0.15

-0.20

-0.25

-0.30

5.5

Input Offset Current (nA)

FIGURE 2-15: Input Bias, Offset Currents vs. Common Mode Input Voltage.

FIGURE 2-17: Input Offset Voltage vs. Common Mode Input Voltage.

50

RL = 25 k

40
30
20
10

0

-10

-20

-30

Input Offset Voltage (µV)

-40

-50

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.

Ω

VDD = 5.5V

VDD = 2.3V

Output Voltage (V)

FIGURE 2-18: Input Offset Voltage vs. Output Voltage.

© 2005 Microchip Technology Inc. DS21613B-page 7

MCP616/7/8/9

5

k

Gain Bandwidth Product

5

5

Note: Unless otherwise indicated, VDD= +2.3V to +5.5V, VSS= GND, TA=25°C, VCM=VDD/2, V

=100kΩ to VDD/2 and CL=60pF.

R

L

25

20

15

10

(µA/Amplifier)

Quiescent Current

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.

TA = +85°C
T

= +25°C

A

T

= -40°C

A

Power Supply Voltage (V)

FIGURE 2-19: Quiescent Current vs. Power Supply Voltage.

130
125
120
115
110
105
100

95

DC Open-Loop Gain (dB)

90

100 1k 10k 100

0.1 1 10 100

Load Resistance (

VDD = 5.5V

VDD = 2.3V

Ω)

FIGURE 2-22: Output Voltage Headroom vs. Output Current Magnitude.

1,000

100

10

Output Voltage Headroom (mV)

1

10µ 100µ 1m 10m

0.01 0.1 1 10

125

RL = 25 kΩ

120

115

110

DC Open-Loop Gain (dB)

105

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.

VDD – V

OH

Output Current Magnitude (A)

Power Supply Voltage (V)

≈ VDD/2,

OUT

VDD = 2.3V

VDD = 5.5V

VOL – V

SS

FIGURE 2-20: DC Open-Loop Gain vs. Load Resistance.

200
180
160
140
120
100

(kHz)

80
60
40
20

0

1k 10k 100k 1M

1 10 100 1,000

Load Resistance (

GBWP

PM

Ω)

100
90
80
70
60
50
40
30
20
10
0

FIGURE 2-21: Gain-Bandwidth Product, Phase Margin vs. Load Resistance.

Phase Margin (°)

FIGURE 2-23: DC Open-Loop Gain vs. Power Supply Voltage.

140
130
120
110
100

90

Seperation (dB)

Channel-to-Channel

80
70

100 100k10k1k

1.E+02 1.E+03 1.E+04 1.E+0

Frequency (Hz)

Referred to Input

FIGURE 2-24: Channel-to-Channel Separation vs. Frequency (MCP617 and MCP619 only).

DS21613B-page 8 © 2005 Microchip Technology Inc.

MCP616/7/8/9





Note: Unless otherwise indicated, VDD= +2.3V to +5.5V, VSS= GND, TA=25°C, VCM=VDD/2, V

=100kΩ to VDD/2 and CL=60pF.

R

L

140
120
100

80
60
40
20

Open-Loop Gain (dB)

0

-20

0.01 0.1 1 10 100 1k 10k 100k 1M

1.E-021.E-011.E+001.E+011.E+021.E+031.E+041.E+051.E+

Gain

Phase

FIGURE 2-25: Open-Loop Gain, Phase vs. Frequency.

10,000

Hz)

1,000

i

ni

100

Density (nV/

Input Noise Voltage

e

ni

06Frequency (Hz)

10,000

1,000

100

0

-30

-60

-90

-120

-150

-180
Open-Loop Phase (°)

-210

-240

Hz)

Density (fA/

Input Noise Current

FIGURE 2-28: CMRR, PSRR vs. Frequency.

OUT

≈ VDD/2,

10

0.1 101 100 10k1k

1.E-011.E+001.E+011.E+021.E+031.E+0

Frequency (Hz)

10

4

FIGURE 2-26: Input Noise Voltage, Current Densities vs. Frequency.

Gain = +1

Output Voltage (20 mV/div)

Time (50 µs/div)

FIGURE 2-27: Small-Signal, Non-Inverting Pulse Response.

FIGURE 2-29: Maximum Output Voltage Swing vs. Frequency.

FIGURE 2-30: Small-Signal, Inverting Pulse Response.

© 2005 Microchip Technology Inc. DS21613B-page 9